摘要:
A deep ultra-violet (DUV) continuous wave (CW) laser includes a fundamental CW laser configured to generate a fundamental frequency with a corresponding wavelength between about 1 μm and 1.1 μm, a third harmonic generator module including one or more periodically poled non-linear optical (NLO) crystals that generate a third harmonic and an optional second harmonic, and one of a fourth harmonic generator module and a fifth harmonic generator. The fourth harmonic generator module includes a cavity resonant at the fundamental frequency configured to combine the fundamental frequency with the third harmonic to generate a fourth harmonic. The fourth harmonic generator module includes either a cavity resonant at the fundamental frequency for combining the fundamental frequency with the third harmonic to generate a fifth harmonic, or a cavity resonant at the second harmonic frequency for combining the second harmonic and the third harmonic to generate the fifth harmonic.
摘要:
An ultra-broadband ultraviolet (UV) catadioptric imaging microscope system with wide-range zoom capability. The microscope system, which comprises a catadioptric lens group and a zooming tube lens group, has high optical resolution in the deep UV wavelengths, continuously adjustable magnification, and a high numerical aperture. The system integrates microscope modules such as objectives, tube lenses and zoom optics to reduce the number of components, and to simplify the system manufacturing process. The preferred embodiment offers excellent image quality across a very broad deep ultraviolet spectral range, combined with an all-refractive zooming tube lens. The zooming tube lens is modified to compensate for higher-order chromatic aberrations that would normally limit performance.
摘要:
A method of inspecting a sample at high speed includes directing and focusing radiation onto a sample, and receiving radiation from the sample and directing received radiation to an image sensor. Notably, the method includes driving the image sensor with predetermined signals. The predetermined signals minimize a settling time of an output signal of the image sensor. The predetermined signals are controlled by a phase accumulator, which is used to select look-up values. The driving can further include loading an initial phase value, selecting most significant bits of the phase accumulator, and converting the look-up values to an analog signal. In one embodiment, for each cycle of a phase clock, a phase increment can be added to the phase accumulator. The driving can be performed by a custom waveform generator.
摘要:
Disclosed is a method and apparatus for using far field scattered and diffracted light (412) to determine whether a collection of topological features on a surface (408), (e.g. a semiconductor wafer) conforms to an expected condition or quality. This determination is made by comparing the far field diffraction pattern of a surface under consideration with a corresponding diffraction pattern (a 'baseline'). If the baseline diffraction pattern and far field diffraction pattern varies by more than a prescribed amount or in characteristic ways, it is inferred that the surface (408) features are defective. The method may be implemented as a die-to-die comparison of far field diffraction patterns of two dies on a semiconductor wafer. The portion of the far field scattered and diffracted light (412) sensitive to a relevant condition or quality can also be reimaged to obtain an improved signal-to-noise ratio.
摘要:
Inspection of EUV patterned masks, blank masks, and patterned wafers generated by EUV patterned masks requires high magnification and a large field of view at the image plane. An EUV inspection system can include a light source directed to an inspected surface, a detector for detecting light deflected from the inspected surface, and an optic configuration for directing the light from the inspected surface to the detector. In particular, the detector can include a plurality of sensor modules. Additionally, the optic configuration can include a plurality of mirrors that provide magnification of at least 100× within an optical path less than 5 meters long. In one embodiment, the optical path is approximately 2-3 meters long.