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公开(公告)号：EP4391093A1
公开(公告)日：2024-06-26
申请号：EP21957594.1
申请日：2021-09-14
申请人： LG Electronics Inc.
发明人： LEE, Jaehyuk , PARK, Chilkeun , CHO, Byoungkwon , PARK, Sungmin
摘要： The semiconductor light emitting device may include a light emitting unit, a first electrode on the bottom and side of the light emitting unit, and a second electrode on the top of the light emitting unit, a plurality of trenches on the sides of the light emitting unit, and a passivation layer on a side of the light emitting unit, and an end of the passivation layer may be located in one of the plurality of trenches.
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公开(公告)号：EP4386726A1
公开(公告)日：2024-06-19
申请号：EP22863904.3
申请日：2022-03-18
发明人： KANEMITSU, Toshiaki , HIRAO, Naoki , BIWA, Goshi , DOI, Masato , OHMAE, Akira
摘要： To provide a light emitting device that can suppress decrease in luminance.
The light emitting device includes a substrate, a first layer, and a second layer in sequence. The first layer includes a plurality of first semiconductor light emitting elements. The second layer includes a plurality of second semiconductor light emitting elements. The plurality of first semiconductor light emitting elements is disposed in the in-plane direction of the substrate, and can emit first light having a first peak wavelength. The first semiconductor light emitting element has a first region and a second region, and the first region is provided in a peripheral edge portion of the first semiconductor light emitting element and cannot emit the first light or can emit only the first light having a lower light emission intensity than the second region. The second region is provided on the inner side of the first region and can emit the first light. The second semiconductor light emitting element is disposed in the in-plane direction of the substrate and can emit second light having a second peak wavelength different from the first peak wavelength, and the first semiconductor light emitting element and the second semiconductor light emitting element are disposed to be shifted from each other in the in-plane direction of the substrate.-
公开(公告)号：EP4379826A1
公开(公告)日：2024-06-05
申请号：EP22849840.8
申请日：2022-07-25
发明人： KIM, Hye In , SON, Jung Hun
IPC分类号： H01L33/50 , F21S41/141 , H01L33/48
CPC分类号： H01L33/48 , H01L33/50 , F21S41/141
摘要： A light-emitting module according to an embodiment comprises: a substrate; a plurality of light-emitting diode chips which are disposed on the substrate; a plurality of wavelength converters which are disposed on the plurality of light-emitting diode chips respectively; and a white wall which surrounds the plurality of light-emitting diode chips and the plurality of wavelength converters, wherein each of the plurality of wavelength converters includes a side surface which is inclined at an inclination angle of 80 degrees or less to the upper surface of the wavelength converter.
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公开(公告)号：EP4365950A1
公开(公告)日：2024-05-08
申请号：EP22833522.0
申请日：2022-06-24
发明人： SONG, Hooyoung , KIM, Jungmin , LEE, Eunhye , HONG, Gisang
IPC分类号： H01L27/12 , H01L27/15 , H01L33/48 , H01L33/62 , H01L25/075
CPC分类号： H01L25/075 , H01L33/48 , H01L33/62 , H01L27/15 , H01L27/12
摘要： The display device according to the embodiment includes a substrate; a first assembly wiring and second assembly wiring alternately arranged on the substrate and spaced apart from each other; a first insulating layer disposed between the first assembly wiring and the second assembly wiring and having different first and second thicknesses; a planarization layer disposed on the first assembly wiring and the second assembly wiring and having a first opening; and a light emitting device disposed inside the first opening, wherein a first electrode overlaps the first assembly wiring and the second assembly wiring, wherein the first electrode is configured to be electrically connected to either the first assembly wiring or the second assembly wiring.
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公开(公告)号：EP3401719A1
公开(公告)日：2018-11-14
申请号：EP17176547.2
申请日：2017-06-19
申请人： J-TEK. CO
发明人： Chung, Hai Woon , Yang, Keun Young
IPC分类号： G02B19/00 , H01L33/58 , H01L33/60 , F21V5/00 , F21V5/04 , F21V7/00 , G02F1/13357 , H01L33/48
CPC分类号： G02B19/0028 , G02B19/0061 , G02F1/133603 , G02F1/133605 , G02F1/133606 , G02F2001/133607 , H01L33/48 , H01L33/58 , H01L33/60 , H01L2933/0058 , H01L2933/0083 , H01L2933/0091
摘要： A diffusing lens (40) and a light emitting device using the same are provided. The diffusing lens (40) includes an input portion (11; 11') concavely formed on a bottom surface of a lens body (10; 10') and having a first convex portion (12) at a center of the input portion (11; 11'); an output portion (17) having a first output surface (13) concavely formed around a center of a top surface of the lens body (10; 10') and a second output surface (15; 15') convexly formed around the first output surface (13), wherein a second convex portion (14) is formed at a center of the first output surface (13); and a reflection portion (19; 19') formed on the bottom surface of the lens body (10; 10') and located around the input portion (11; 11') to reflect an incident light in the lens body (10; 10'). The first output surface (13) extends from a light axis of the diffusing lens (40) until a predetermined distance from the light axis and is formed into an elliptical shape with two focuses, and the second output surface (15; 15') extends from the predetermined distance to surround the first output surface (13) and is formed into a circular shape with a predetermined radius.
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公开(公告)号：EP3376546A1
公开(公告)日：2018-09-19
申请号：EP16864548.9
申请日：2016-11-09
申请人： LG Innotek Co., Ltd.
发明人： PARK, Chan Keun , KIM, Sul Hee
CPC分类号： H01L33/00 , H01L33/14 , H01L33/32 , H01L33/48 , H01L2224/48091 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
摘要： An embodiment relates to an ultraviolet light-emitting device, a method for manufacturing the ultraviolet light-emitting element, a light-emitting element package, and a lighting device.
An ultraviolet light-emitting element according to an embodiment includes: a first conductive type first semiconductor layer having a light extraction structure; an etching-blocking layer on the first conductive type first semiconductor layer; a first conductive type second semiconductor layer on the etching-blocking layer, an active layer on the first conductive type second semiconductor layer; a second conductive type semiconductor layer on the active layer; and an electron spreading layer disposed between the etching-blocking layer and the active layer, wherein the electron spreading layer includes a first conductive type or an undoped AlGaN-based or a GaN-based semiconductor layer, an undoped AlN, and a first conductive type AlGaN-based second semiconductor layer, so that it is possible to improve electron spreading by generating an internal field by piezo-electric due to a difference in a lattice constant between the first conductive type or the undoped AlGaN-based or the GaN-based semiconductor layer and the undoped AlN, and inducing electron spreading at an interface between the first conductive type or the undoped AlGaN-based or the GaN-based semiconductor layer and the undoped AlN.-
公开(公告)号：EP2648906B1
公开(公告)日：2018-09-19
申请号：EP11847549.0
申请日：2011-11-22
CPC分类号： H01L25/167 , H01L21/78 , H01L21/822 , H01L23/50 , H01L24/97 , H01L31/1876 , H01L33/005 , H01L33/48 , H01L33/52 , H01L2924/1204 , H01L2924/12042 , H01L2924/14 , H01S5/0217 , H01S5/026 , H01L2924/00
摘要： A method of fabricating a composite semiconductor structure includes providing an SOI substrate including a plurality of silicon-based devices and providing a compound semiconductor substrate including a plurality of photonic devices. The method also includes dicing the compound semiconductor substrate to provide a plurality of photonic dies. Each die includes one or more of the plurality of photonics devices. The method further includes providing an assembly substrate, mounting the plurality of photonic dies on predetermined portions of the assembly substrate, aligning the SOI substrate and the assembly substrate, joining the SOI substrate and the assembly substrate to form a composite substrate structure, and removing at least a portion of the assembly substrate from the composite substrate structure.
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公开(公告)号：EP3361471A1
公开(公告)日：2018-08-15
申请号：EP16853349.5
申请日：2016-09-01
CPC分类号： G09G3/32 , G09G3/14 , G09G3/20 , G09G2320/041 , G09G2320/043 , H01L33/00 , H01L33/48 , H05B37/02
摘要： A light-emitting diode display device includes: a display that includes a light-emitting diode; a drive unit that drives the light-emitting diode; a lighting time storage unit that stores a cumulative lighting time of the light-emitting diode; a first temperature detection unit that detects a first temperature of the light-emitting diode; a first temperature storage unit that stores the first temperature; an aging display that includes a measurement light-emitting diode; a drive unit that drives the measurement light-emitting diode; a drive data generation unit that generates drive data; a second temperature detection unit that detects a temperature of the measurement light-emitting diode; a second temperature storage unit that stores a second temperature; a brightness measurement unit that measures brightness of the measurement light-emitting diode; a brightness reduction rate storage unit that stores a brightness reduction rate; a compensation factor calculation unit that finds a compensation factor from the cumulative lighting time and the brightness reduction rate, and corrects the compensation factor on the basis of a difference between the first temperature and the second temperature; and a brightness compensation circuit that compensates the brightness of the light-emitting diode on the basis of the compensation factor.
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9.发明公开
公开(公告)号：EP3300126A4
公开(公告)日：2018-04-25
申请号：EP15901632
申请日：2015-12-18
发明人： HE JINHUA
CPC分类号： H01L33/48 , H01L33/50 , H01L33/52 , H01L2933/0041
摘要： Provided are a process method for bond-packaging an LED using a refined photoconverter, and a refining equipment system. The process method includes the following continuous process flow: roll-shaping of a special-shaped microporous carrier sheet, refining of a semi-cured photoconversion sheet, preparation of a flip chip LED array sheet, forming of LED package elements by roll-bonding, curing of the LED package elements, and cutting of the LED package elements. The present invention has a significant advantage of a refined photoconverter, and especially can meet a requirement of a continuous process flow of bond-packaging an LED using an organic silicone resin photoconverter, so as to enhance the production efficiency and yield of LED packages in industrialized batch production.
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公开(公告)号：EP2249405B1
公开(公告)日：2018-04-25
申请号：EP10161793.4
申请日：2010-05-03
申请人： LG Innotek Co., Ltd.
发明人： Hwang, Sung Min , Song, Hyun Don , Cho, Hyun Kyong
CPC分类号： H01L33/60 , H01L33/0033 , H01L33/145 , H01L33/40 , H01L33/405 , H01L33/42 , H01L33/48 , H01L33/62 , H01L2224/48091 , H01L2924/12032 , H01L2933/0016 , H01L2924/00014 , H01L2924/00
摘要： A light emitting device including a second conductive type semiconductor layer; an active layer over the second conductive type semiconductor layer; a first conductive type semiconductor layer over the active layer; a second electrode in a first region under the second conductive type semiconductor layer; a current blocking layer including a metal; and a first electrode over the first conductive type semiconductor layer. Further, the first electrode has at least one portion that vertically overlaps the current blocking layer.
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