摘要:
A semiconductor light-emitting device having a plurality of semiconductor rods (9), each of which has a pn junction, formed on a semiconductor substrate (3) such that the plurality of semiconductor rods are arranged at a distance substantially equal to an integer multiple of the wavelength of light emitted from said semiconductor rod. With this structure, various novel optical devices such as micro-cavity lasers having an extremely small threshold current and coherent light-emitting devices having no threshold value can be realized.
摘要:
A glass layer (2); is formed inside a silica glass tube (3) and another glass layer (1) having a refractive index higher than that of the abovementioned glass layer (2) is formed on said glass layer (2). After these glass layers (1,2) are formed, one end of the glass tube (3) is collapsed. While the internal pressure of the glass tube is being reduced below the atmospheric pressure, the glass tube is caused to collapse by heating, thereby yielding a preform for an optical fiber. The optical fiber produced from this preform has the difference in the refractive indices of the two orthogonal major axes (x, y) of at least 1.6 x 10 -4 and maintains the linear polarization plane.
摘要:
A glass layer (2); is formed inside a silica glass tube (3) and another glass layer (1) having a refractive index higher than that of the abovementioned glass layer (2) is formed on said glass layer (2). After these glass layers (1,2) are formed, one end of the glass tube (3) is collapsed. While the internal pressure of the glass tube is being reduced below the atmospheric pressure, the glass tube is caused to collapse by heating, thereby yielding a preform for an optical fiber. The optical fiber produced from this preform has the difference in the refractive indices of the two orthogonal major axes (x, y) of at least 1.6 x 10 -4 and maintains the linear polarization plane.
摘要:
A field effect transistor and a ballistic transistor using semiconductor whiskers (1) each having a desired diameter and formed at a desired location, a semiconductor vacuum microelectronic device using the same as electron emitting materials, a light emitting device using the same as quantum wires and the like are disclosed.
摘要:
An optical device having a material (21) exhibitive of an optical rectification effect is disclosed. The optical device utilizes direct current polarization which is induced in the material (21) by control light (25). The induction of the direct current polarization in the material by the control light(25) changes the refractive index and absorption spectrum of the material (21). This is based on the so-called electrooptic effect and Franz-Keldysh effect. The present invention provides the optical device according to which external incident light (23) can be modulated at high speed with the control light (25) by utilizing the change of the refractive index or the change of the absorption spectrum.
摘要:
A device structure is provided for optical modulation using a quantum interference effect in an excited state of electron-systems. The optical modulation is performed by causing the effect of modulation on the excited state of electron-systems represented by excitons to be executed on light (104) via the state in which the light and the excited state of electron-systems represented by the excitonic polaritons are coupled.
摘要:
An optical bistable device (21) has a film (12) exhibiting excitonic absorption on a substrate (1). The film is of a layer structure substance such as Hgl 2 , Pbl 2 , GaS, InS, InSe or GaSe and is formed on a transparent substrate (1) of glass or the like by evaporation or vapor growth. The film (12) manifests optical bistability. The construction and the manufacture of such a device can be simple, and the device may operate at room temperature.