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    VERTICAL CAVITY SURFACE EMITTING LASER
    4.
    发明授权
    VERTICAL CAVITY SURFACE EMITTING LASER 有权

    公开(公告)号：EP3198691B1

    公开(公告)日：2018-05-09

    申请号：EP15757504.4

    申请日：2015-09-03

    申请人： Koninklijke Philips N.V.

    发明人： GERLACH, Philipp Henning ,  JÄGER, Roland Aloisius

    IPC分类号： H01S5/183 ,  H01S5/30 ,  H01S5/42

    CPC分类号： H01S5/423 ,  H01S5/026 ,  H01S5/183 ,  H01S5/18305 ,  H01S5/18308 ,  H01S5/18313 ,  H01S5/18369 ,  H01S5/18386 ,  H01S5/18391 ,  H01S5/187 ,  H01S5/305 ,  H01S5/42

    摘要： The invention describes a Vertical Cavity Surface Emitting Laser and a method of manufacturing such a Vertical Cavity Surface Emitting Laser. The Vertical Cavity Surface Emitting Laser comprising a first electrical contact (105, 405, 505, 605, 705), a substrate (110, 410, 610, 710), a first distributed Bragg reflector (115, 415, 615, 715), an active layer (120, 420, 620, 720), a distributed heterojunction bipolar phototransistor (125, 425, 625, 725), a second distributed Bragg reflector (130, 430, 630, 730) and a second electrical contact (135, 435, 535, 635, 735), the distributed heterojunction bipolar phototransistor (125, 425, 625, 725) comprising a collector layer (125a), a light sensitive layer (125c), a base layer (125e) and an emitter layer (125f), wherein the distributed heterojunction bipolar phototransistor (125, 425, 625, 725) is arranged such that there is an optical coupling between the active layer (120, 420, 620, 720) and the distributed heterojunction bipolar phototransistor (125, 425, 625, 725) for providing an active carrier confinement by means of the distributed heterojunction bipolar phototransistor (125, 425, 625, 725) such that an optical mode of the Vertical Cavity Surface Emitting Laser is self-positioning in accordance with the active carrier confinement during operation of the Vertical Cavity Surface Emitting Laser. It is the intention of the present invention to provide a VCSEL which can be easily and reliably processed by integrating the distributed heterojunction bipolar phototransistor (125, 425, 625, 725).

    Grating based optical transmitter
    5.
    发明公开
    Grating based optical transmitter 审中-公开
    Gitter-basierter optischer发件人

    公开(公告)号：EP2913902A1

    公开(公告)日：2015-09-02

    申请号：EP15157204.7

    申请日：2015-03-02

    申请人： Forelux Inc.

    发明人： Chen, Shu-Lu ,  Na, Yun-Chung

    IPC分类号： H01S5/062 ,  H01S5/10 ,  H01S5/187 ,  G02B6/30 ,  G02B6/34 ,  G02B6/124 ,  H01S5/026 ,  H01S5/042 ,  G02B6/122 ,  G02B6/12

    CPC分类号： H01S5/06206 ,  G02B6/1226 ,  G02B6/34 ,  G02B2006/12107 ,  H01S5/026 ,  H01S5/0424 ,  H01S5/0425 ,  H01S5/06226 ,  H01S5/1032 ,  H01S5/187

    摘要： An optical transmitter including two reflective regions (666,674) formed at two opposite ends of an interference region (670) along a first direction and at least three electrodes (691-693) electrically coupled to the interference region, where the amount of electrical carriers inside the interference region can be modulated by changing the relative electrical fields among the three electrodes, so that the amount of photons generated inside the interference region can be modulated and resonant along the first direction and emit along a second direction that is different from the first direction. Vertical output coupling is realized with a suitable grating (680) upon the interference region (670). The third electrode (693) may be transparent to the emitted light.

    摘要翻译： 一种光发射器，包括沿着第一方向形成在干涉区域（670）的两个相对端处的两个反射区域（666,674）和至少三个电耦合到干涉区域的电极（691-693），其中电载体的数量 可以通过改变三个电极之间的相对电场来调制干涉区域，使得在干涉区域内产生的光子的量可以沿着第一方向被调制和谐振，并且沿着与第一方向不同的第二方向发射 。 在干涉区域（670）上用合适的光栅（680）实现垂直输出耦合。 第三电极（693）对于发射的光可以是透明的。

    VERTICAL-CAVITY SURFACE-EMITTING LASER
    8.
    发明公开
    VERTICAL-CAVITY SURFACE-EMITTING LASER 审中-公开
    OBERFLÄCHENEMITTIERENDERLASER MIT VERTIKALENHOHLRÄUMEN

    公开(公告)号：EP2822115A1

    公开(公告)日：2015-01-07

    申请号：EP13754127.2

    申请日：2013-02-27

    申请人： Murata Manufacturing Co., Ltd.

    发明人： WATANABE, Hiroshi ,  TATE, Atsushi ,  KONA, Takayuki ,  MATSUBARA, Ippei ,  IWATA, Keiji

    IPC分类号： H01S5/187

    CPC分类号： H01S5/18377 ,  B82Y20/00 ,  H01S5/0021 ,  H01S5/18311 ,  H01S5/18358 ,  H01S5/187 ,  H01S5/3201 ,  H01S5/3213 ,  H01S5/3432 ,  H01S2301/176

    摘要： A vertical cavity surface emitting laser (10) includes an active layer (50) that includes a quantum well, a first cladding layer (40) and a second cladding layer (60) between which the active layer (50) is interposed, a first multilayer reflector layer (30) arranged on a side of the first cladding layer (40) opposite to that on which the active layer (50) is arranged, a second multilayer reflector layer (80) arranged on a side of the second cladding layer (60) opposite to that on which the active layer (50) is arranged, a first electrode (91) that is arranged on a side of the first multilayer reflector layer (30) opposite to that on which the first cladding layer (40) is arranged, and a second electrode (92) that is arranged on a side of the second multilayer reflector layer (80) opposite to that on which the second cladding layer (60) is arranged. At least one of the first cladding layer (40) and the second cladding layer (60) includes a low activity energy layer (42, 62) having a band gap that is smaller than a smallest band gap of a optical confinement layer for forming the quantum well of the active layer (50) and larger than a band gap of the quantum well.

    摘要翻译： 垂直腔表面发射激光器（10）包括有源层（50），其包括量子阱，第一覆层（40）和第二覆层（60），有源层（50）插在其间，第一覆层 布置在与设置有源层（50）相反的第一包层（40）的一侧上的多层反射器层（30），布置在第二覆层的一侧的第二多层反射器层（80） 60），布置在与所述第一包层（40）相对的第一多层反射器层（30）的一侧上的第一电极（91） 以及布置在第二多层反射器层（80）的与布置有第二覆层（60）的相反侧的第二电极（92）。 第一包覆层（40）和第二包覆层（60）中的至少一个包括具有小于光限制层的最小带隙的带隙的低活性能量层（42,62），用于形成 有源层（50）的量子阱并且大于量子阱的带隙。