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32 条记录 (耗时 0.009 秒)

    THIN-FILM RESONATOR MANUFACTURING METHOD AND DEVICE
    1.
    发明公开
    THIN-FILM RESONATOR MANUFACTURING METHOD AND DEVICE 审中-公开
    薄型通道选择制造方法和装置

    公开(公告)号：EP3062441A4

    公开(公告)日：2016-11-02

    申请号：EP14855594

    申请日：2014-06-20

    申请人： ZTE CORP

    发明人： ZHANG HAO ,  DU LIANGZHEN ,  PANG WEI ,  CHENG WEI ,  JIANG YUAN ,  SUN HAILONG

    IPC分类号： H03H9/17 ,  H03H3/02 ,  H03H3/04

    CPC分类号： H03H9/172 ,  H03H3/04 ,  H03H9/171 ,  H03H2003/021 ,  H03H2003/023 ,  H03H2003/025 ,  H03H2003/0421 ,  H03H2003/0428 ,  H03H2003/0435 ,  H03H2003/0442 ,  H03H2003/0471

    摘要： Provided are a method and device for manufacturing a film resonator. The manufacturing method includes that: a thickness of each film layer which has been deposited is detected; when the detected thickness of any film layer which has been deposited is not in a standard thickness range, it is judged whether a mass loading layer has been deposited, and when the mass loading layer has not been deposited, at least one film layer which has not been deposited is selected for thickness compensation, and according to a compensated thickness of the selected at least one film layer which has not been deposited and a target frequency offset, a thickness of the mass loading layer required for generating the target frequency offset is calculated, wherein the standard thickness range is determined by a target frequency and a process production capacity of the resonator; subsequent film deposition is conducted according to the compensated thickness of the selected at least one film layer which has not been deposited and the calculated thickness of the mass loading layer. The manufacturing method and device can accurately generate the required frequency offset, thereby improving the yield rate of products.

    Multiple frequency acoustic reflector array and monolithic cover for resonators and method
    3.
    发明公开
    Multiple frequency acoustic reflector array and monolithic cover for resonators and method 有权
    多频声反射器装置，单片盖和方法

    公开(公告)号：EP1120910A3

    公开(公告)日：2002-01-30

    申请号：EP01200190.5

    申请日：2001-01-18

    申请人： Texas Instruments Incorporated

    发明人： Panasik, Carl M.

    IPC分类号： H03H9/58

    CPC分类号： H03H9/589 ,  H03H2003/0471 ,  Y10T29/42

    摘要： A radio frequency filter system includes a first acoustic resonator (54, 56) for a first frequency and a second acoustic resonator (54, 56) for a second frequency. An acoustic reflector array (102, 152, 202) is coupled to an electrode of the first acoustic resonator (54, 56) and to an electrode of the second acoustic resonator(54, 56). The acoustic reflector array (102, 152, 202) includes a plurality of reflector layers (112, 152, 210). A first reflector layer (112, 152, 210) is operable to reflect a signal at substantially the first frequency. A second reflector layer (112, 152, 210) is operable to reflect a signal at substantially the second frequency.

    PIEZOELECTRIC OSCILLATOR AND DETECTING SENSOR
    4.
    发明公开
    PIEZOELECTRIC OSCILLATOR AND DETECTING SENSOR 审中-公开
    PIEZOELEKTRISCHER OSZILLATOR UND DETEKTIONSSENSOR

    公开(公告)号：EP2280481A1

    公开(公告)日：2011-02-02

    申请号：EP09750408.8

    申请日：2009-03-02

    申请人： Nihon Dempa Kogyo Co., Ltd.

    发明人： WATANABE, Shigenori ,  MUTOH, Takeru ,  KOYAMA, Mitsuaki

    IPC分类号： H03H9/17 ,  G01N5/02 ,  H03B5/32 ,  H03H9/19 ,  H03H9/205

    CPC分类号： G01N5/02 ,  G01G3/13 ,  G01G3/16 ,  G01G3/18 ,  G01N1/405 ,  G01N33/0004 ,  H03B5/323 ,  H03H3/04 ,  H03H9/02157 ,  H03H9/132 ,  H03H9/56 ,  H03H2003/0428 ,  H03H2003/0435 ,  H03H2003/0471

    摘要： Objects of the present invention is to provide a piezoelectric resonator having high frequency stability and a sensing sensor using the piezoelectric resonator.
    In the present invention, a piezoelectric resonator 1 has: a first oscillation area 105 which is provided in a piezoelectric piece 100 and from which a first oscillation frequency is taken out; a second oscillation area which is provided in an area 105 different from the first oscillation area 106 via an elastic boundary area 107 and from which a second oscillation frequency is taken out; and excitation electrodes 101 to 103 provided on one surface side and another surface side of the oscillation areas 105, 106 across the piezoelectric piece 100, and a frequency difference between the first oscillation frequency and the second oscillation frequency is not less than 0.2% nor greater than 2.2% of these oscillation frequencies.

    摘要翻译： 本发明的目的是提供一种具有高频稳定性的压电谐振器和使用压电谐振器的感测传感器。 在本发明中，压电谐振器1具有：第一振荡区域105，其被设置在压电片100中并从中取出第一振荡频率; 第二振荡区域，经由弹性边界区域107设置在与第一振荡区域106不同的区域105中，并从其中取出第二振荡频率; 并且设置在振动区域105,106的压电片100的一个表面侧和另一个表面侧上的激励电极101至103以及第一振荡频率和第二振荡频率之间的频率差不小于0.2％或更大 超过这些振荡频率的2.2％。

    Controlled effective coupling coefficients for film bulk acoustic resonators
    7.
    发明公开
    Controlled effective coupling coefficients for film bulk acoustic resonators 有权
    在Dünnschichtresonatorenmit akustischen Vollumenwellen的Regopung von effektiven Kopplungskoeffizienten

    公开(公告)号：EP1253713A2

    公开(公告)日：2002-10-30

    申请号：EP02005050.6

    申请日：2002-03-06

    申请人： Agilent Technologies, Inc. (a Delaware corporation)

    发明人： Ruby, Richard C. ,  Bradley, Paul ,  Figueredo, Dominguo ,  Larson, John D. III ,  Oshmyansky, Yury

    IPC分类号： H03H9/58 ,  H03H3/02

    CPC分类号： H03H9/706 ,  H03H3/04 ,  H03H9/0571 ,  H03H9/587 ,  H03H2003/0471 ,  Y10T29/42

    摘要： In an array of acoustic resonators, the effective coupling coefficient of first and second filters (68 and 73) are individually tailored in order to achieve desired frequency responses. In a duplexer embodiment, the effective coupling coefficient of a transmit band-pass filter is lower than the effective coupling coefficient of a receive band-pass filter of the same duplexer. In one embodiment, the tailoring of the coefficients is achieved by varying the ratio of the thickness of a piezoelectric layer (94 and 100) to the total thickness of electrode layers (92, 94, 96 and 98). For example, the total thickness of the electrode layers of the transmit filter may be in the range of 1.2 to 2.8 times the total thickness of the electrode layers of the receive filter.

    摘要翻译： 在声谐振器阵列中，分别对第一和第二滤波器（68和73）的有效耦合系数进行调整，以实现所需的频率响应。 在双工器实施例中，发射带通滤波器的有效耦合系数低于同一双工器的接收带通滤波器的有效耦合系数。 在一个实施例中，通过改变压电层（94和100）的厚度与电极层（92,94,96和98）的总厚度之比来实现系数的调整。 例如，发射滤波器的电极层的总厚度可以在接收滤波器的电极层的总厚度的1.2至2.8倍的范围内。

    THIN-FILM RESONATOR MANUFACTURING METHOD AND DEVICE
    8.
    发明公开
    THIN-FILM RESONATOR MANUFACTURING METHOD AND DEVICE 审中-公开
    德黑兰国家公民组织

    公开(公告)号：EP3062441A1

    公开(公告)日：2016-08-31

    申请号：EP14855594.9

    申请日：2014-06-20

    申请人： ZTE Corporation

    发明人： ZHANG, Hao ,  DU, Liangzhen ,  PANG, Wei ,  CHENG, Wei ,  JIANG, Yuan ,  SUN, Hailong

    IPC分类号： H03H9/17

    CPC分类号： H03H9/172 ,  H03H3/04 ,  H03H9/171 ,  H03H2003/021 ,  H03H2003/023 ,  H03H2003/025 ,  H03H2003/0421 ,  H03H2003/0428 ,  H03H2003/0435 ,  H03H2003/0442 ,  H03H2003/0471

    摘要： Provided are a method and device for manufacturing a film resonator. The manufacturing method includes that: a thickness of each film layer which has been deposited is detected; when the detected thickness of any film layer which has been deposited is not in a standard thickness range, it is judged whether a mass loading layer has been deposited, and when the mass loading layer has not been deposited, at least one film layer which has not been deposited is selected for thickness compensation, and according to a compensated thickness of the selected at least one film layer which has not been deposited and a target frequency offset, a thickness of the mass loading layer required for generating the target frequency offset is calculated, wherein the standard thickness range is determined by a target frequency and a process production capacity of the resonator; subsequent film deposition is conducted according to the compensated thickness of the selected at least one film layer which has not been deposited and the calculated thickness of the mass loading layer. The manufacturing method and device can accurately generate the required frequency offset, thereby improving the yield rate of products.

    摘要翻译： 提供一种制造薄膜谐振器的方法和装置。 该制造方法包括：检测已经沉积的每个膜层的厚度; 当已经沉积的任何薄膜层的检测厚度不在标准厚度范围内时，判断是否已经沉积了质量加载层，并且当质量加载层尚未沉积时，至少有一个薄膜层具有 选择未沉积的厚度补偿，并且根据所选择的至少一个未沉积的膜层的补偿厚度和目标频率偏移，计算产生目标频率偏移所需的质量加载层的厚度 ，其中所述标准厚度范围由所述谐振器的目标频率和工艺生产能力确定; 根据所选择的至少一个未沉积的膜层的补偿厚度和质量加载层的计算厚度，进行后续的膜沉积。 制造方法和装置可以精确地产生所需的频偏，从而提高产品的产量。

    PIEZOELECTRIC RESONATOR AND PIEZOELECTRIC FILTER
    9.
    发明公开
    PIEZOELECTRIC RESONATOR AND PIEZOELECTRIC FILTER 审中-公开
    PIEZOELEKTRISCER谐振器和压电滤波器

    公开(公告)号：EP2003775A4

    公开(公告)日：2011-04-27

    申请号：EP07740050

    申请日：2007-03-28

    申请人： MURATA MANUFACTURING CO

    发明人： UMEDA KEIICHI ,  MIYAKE TAKASHI

    IPC分类号： H03H9/17 ,  H01L41/09 ,  H01L41/18 ,  H01L41/22 ,  H01L41/29 ,  H01L41/39 ,  H03H9/54 ,  H03H9/58

    CPC分类号： H03H9/564 ,  H03H3/04 ,  H03H9/02118 ,  H03H9/173 ,  H03H2003/0428 ,  H03H2003/0442 ,  H03H2003/0471

    摘要： A piezoelectric resonator is obtained that is capable of having a reduced size and thickness thereof and that is less prone to having a spurious component occurring in a mode at which it propagates in a piezoelectric thin film at a range higher than a resonant frequency. A piezoelectric resonator includes a laminated thin film having a first thin film portion supported by a substrate 2 and a second thin film portion separated from a first main surface of the substrate and acoustically isolated. The second thin film portion of the laminated thin film includes a piezoelectric thin film 5, a first electrode 12 disposed on the upper surface of the piezoelectric thin film, and a second electrode 13 disposed on the lower surface of the piezoelectric thin film and being larger and thicker than the first electrode. The piezoelectric resonator further includes a mass adding film 11 disposed around the first electrode 12 and on at least one part of a region outside the periphery of a piezoelectric vibrating portion where the first and second electrodes 12 and 13 overlap each other with the piezoelectric thin film 5 disposed therebetween. The second electrode 13 is formed, in plan view, so as to extend beyond the piezoelectric vibrating portion to a region at which the mass adding film 11 is disposed.