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    ACOUSTIC RESONATOR AND FILTER
    3.
    发明公开
    ACOUSTIC RESONATOR AND FILTER 有权
    AKUSTISCHER RESONATOR UND FILTER

    公开(公告)号：EP1898525A1

    公开(公告)日：2008-03-12

    申请号：EP06767181.8

    申请日：2006-06-22

    申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

    发明人： TSURUMI, Naohiro c/o Matsushita Electr.Industr. ,  IWASAKI, Tomohiro c/o Matsushita Electr.Industr. ,  ONISHI, Keiji c/o Matsushita Electr.Industr. ,  NAKATSUKA, Hiroshi c/o Matsushita Electr.Ind. ,  NAKAMURA, Hiroyuki c/o Matsushita Electr.Ind.

    IPC分类号： H03H9/17 ,  H03H9/58

    CPC分类号： H03H9/0211 ,  H03H3/02 ,  H03H9/173 ,  H03H9/175 ,  H03H2003/021 ,  H03H2003/025

    摘要： A first supporting section 30 is provided between a substrate section 40 and a second supporting section 20. The first supporting section 30 is structured by, e.g., a film formed from a material having a higher acoustic impedance than a piezoelectric body 11 and the substrate section 40, or a film formed from a material having a smaller Q value than the piezoelectric body 11 and substrate section 40. By inserting the first supporting section 30, most vibration from the second supporting section 20 toward the substrate section 40 is reflected (arrow a), and also a vibration having been transmitted to the substrate section 40 from the second supporting section 20 is prevented from reflecting at the bottom of the substrate section 40 and then returning in a direction of the vibration section 10 (arrow b).

    摘要翻译： 第一支撑部分30设置在基板部分40和第二支撑部分20之间。第一支撑部分30由例如由具有比压电体11更高的声阻抗的材料形成的膜和基板部分 或者由具有比压电体11和基板部40的Q值小的材料形成的膜。通过插入第一支撑部30，从第二支撑部20向基板部40的大部分振动被反射（箭头a ），并且从第二支撑部20传递到基板部40的振动也被防止在基板部40的底部反射，然后在振动部10的方向上返回（箭头b）。

    PROCESS FOR PRODUCING MICROMACHINE, AND MICROMACHINE
    4.
    发明公开
    PROCESS FOR PRODUCING MICROMACHINE, AND MICROMACHINE 审中-公开
    密歇根州的赫尔辛基

    公开(公告)号：EP1890379A1

    公开(公告)日：2008-02-20

    申请号：EP06711955.2

    申请日：2006-01-19

    申请人： Sony Corporation

    发明人： OSAKA, Tsutomu c/o Sony Corporation ,  SATO, Susumu

    IPC分类号： H03H3/02 ,  H01L41/22 ,  H01L21/302 ,  H01L41/09 ,  H03H9/17 ,  B81C1/00

    CPC分类号： H03H9/173 ,  B81B2201/0271 ,  B81C1/00476 ,  H01L21/31111 ,  H03H3/02 ,  H03H9/02149 ,  H03H2003/021 ,  Y10T29/42

    摘要： A method of manufacturing a micromachine in which corrosion of a structure is restrained and the micromachine are provided. The method of manufacturing a micromachine includes a first step of patterningly forming a sacrificial layer 12 having a silicon oxide based material containing a hydrogen fluoride dissociating species on a substrate 11, a second step of forming a structure 16 on the substrate 11 in the state of covering the sacrificial layer 12, a third step of forming the structure 16 on the sacrificial layer 12 with a hole part or parts 18 reaching the sacrificial layer 12, and a fourth step of forming a vibrating space between the substrate 11 and the structure 16 by introducing only a hydrogen fluoride gas or only the hydrogen fluoride gas and an inert gas through the hole part or parts 18 and etching the sacrificial layer 12 by use of the dissociating species contained in the sacrificial layer 12. The micromachine is manufactured by the method.

    摘要翻译： 制造其中抑制了结构的腐蚀并且提供微机械的微机械的方法。 微机械的制造方法包括在基板11上图案化地形成具有含有氟化氢解离物质的氧化硅系材料的牺牲层12的第一工序，在基板11上形成结构体16的第二工序 覆盖牺牲层12的第三步骤，在牺牲层12上形成具有到达牺牲层12的孔部分18的结构16的第三步骤，以及在衬底11与结构16之间形成振动空间的第四步骤 仅通过孔部分18仅引入氟化氢气体或仅氟化氢气体和惰性气体，并且通过使用牺牲层12中所含的解离物种蚀刻牺牲层12.微机械通过该方法制造。

    Filter having multiple piezoelectric thin-film resonators
    5.
    发明公开
    Filter having multiple piezoelectric thin-film resonators 审中-公开
    过滤器mehreren piezoelektrischenDünnschichtresonatoren

    公开(公告)号：EP1863173A2

    公开(公告)日：2007-12-05

    申请号：EP07109239.9

    申请日：2007-05-30

    申请人： Fujitsu Ltd.

    发明人： Taniguchi, Shinji ,  Yokoyama, Tsuyoshi ,  Hara, Motoaki ,  Sakashita, Takeshi ,  Tsutsumi, Jun ,  Iwaki, Masafumi ,  Nishihara, Tokihiro ,  Ueda, Masanori ,  Ehara, Hisanori

    IPC分类号： H03H3/02 ,  H03H9/58 ,  H03H9/02

    CPC分类号： H03H9/605 ,  H03H3/02 ,  H03H9/02118 ,  H03H9/02141 ,  H03H9/132 ,  H03H9/173 ,  H03H9/174 ,  H03H2003/021

    摘要： A filter includes multiple piezoelectric thin-film resonators (S11,S12,S13,S14,P11,P12,P13,P14) each having a substrate (11), a lower electrode (13) formed on the substrate (11), a piezoelectric film (14) formed on the lower electrode (13), and an upper electrode (15) provided on the piezoelectric film (14) so that the upper electrode (15) and the lower electrode (13) face each other across the piezoelectric film (14).
    The piezoelectric thin-film resonator (S11,S12,S13,S14,P11,P12,P13,P14) are of two types:
    a) a first type (S11,S14,P11,P14) where at least a part (28) of an outer curved portion of the piezoelectric film (14) is located further out than an outer curved portion (26) of a region (24) in which the upper electrode (15) and the lower electrode (13) face each other across the piezoelectric film (14); and
    b) a second type (Sl2,S13,P12,P13) in which at least a part of an outer curved portion of the piezoelectric film (14) coincides with an outer curved portion (26) of a region (24) in which the upper electrode (15) and the lower electrode (13) face each other across the piezoelectric film (14) or is further inside the outer curved portion (26) of the region (24).

    摘要翻译： 滤波器包括各自具有基板（11），形成在基板（11）上的下部电极（13），压电体（11），压电元件（13），压电元件 形成在下电极（13）上的膜（14）和设置在压电膜（14）上的上电极（15），使得上电极（15）和下电极（13）跨越压电膜 （14）。 压电薄膜谐振器（S11，S12，S13，S14，P11，P12，P13，P14）有两种类型：a）第一类型（S11，S14，P11，P14），其中至少一部分（28） 所述压电膜（14）的外部弯曲部分的位置比所述上部电极（15）和所述下部电极（13）的所述区域（24）的外部弯曲部分（26）位于所述外部弯曲部分 压电薄膜（14）; 和b）压电膜（14）的外弯曲部分的至少一部分与区域（24）的外弯曲部分（26）重合的第二类型（Sl2，S13，P12，P13），其中 上电极（15）和下电极（13）跨越压电膜（14）彼此面对，或者进一步在区域（24）的外弯曲部分（26）的内部。

    Film bulk acoustic resonator having an air gap and a method for manufacturing the same
    8.
    发明公开
    Film bulk acoustic resonator having an air gap and a method for manufacturing the same 有权
    Dünnschicht-Volumenwellen-Resonator（FBAR）mit Luftspalt und Herstellungsmethodedafür

    公开(公告)号：EP1471636A1

    公开(公告)日：2004-10-27

    申请号：EP04251965.2

    申请日：2004-04-01

    申请人： Samsung Electronics Co., Ltd.

    发明人： Jun, Chan-bong ,  Seo, O-gweon

    IPC分类号： H03H9/17

    CPC分类号： H03H9/173 ,  H03H3/02 ,  H03H2003/021 ,  Y10T29/42

    摘要： A film bulk acoustic resonator (FBAR) includes a resistance layer (112,114) deposited on the upper surface of a semiconductor substrate (111) and having a recess (130) therein, a membrane layer (116) on the upper surfaces of the resistance layer (112,114) and the recess, thereby forming an air gap between the membrane layer (116) and the semiconductor substrate (111), and a resonator (120) having a lower electrode (117), a piezoelectric layer (118), and an upper electrode (119) deposited on the membrane layer (116). The resistance layer (112,114) may include first (112) and second (114) resistance layers, the first resistance layer (112) having the recess (130) therein and the second resistance layer (114) being deposited on the upper surfaces of the recess (130). Thus, the air gap is formed without etching the semiconductor substrate (111), enhancing the resonant characteristics of the FBAR. Active and/or passive devices can be formed underneath the air gap to be integrated with the FBAR.

    摘要翻译： 电阻层（112）形成在半导体衬底（111）上。 在凹陷（112'）上的电阻层上形成膜层以形成气隙。 在膜层的上部形成有一个电极。 在膜层和电极的上部形成有压电体层。 另一电极形成在压电层的上部。 薄膜体声波谐振器制造方法中还包括独立权利要求。

    Fabrication of film bulk acoustic resonator
    9.
    发明公开
    Fabrication of film bulk acoustic resonator 审中-公开
    Herstellung einesDünnfilmresonatorsmit akustischen Volumenwellen

    公开(公告)号：EP1315293A2

    公开(公告)日：2003-05-28

    申请号：EP02009756.4

    申请日：2002-04-30

    申请人： SAMSUNG ELECTRONICS CO. LTD.

    发明人： Seo, O-gweon ,  Jun, Chan-bong ,  Park, Man-geum

    IPC分类号： H03H3/02

    CPC分类号： H03H9/173 ,  H03H3/02 ,  H03H2003/021 ,  Y10T29/42 ,  Y10T29/49128 ,  Y10T29/49155

    摘要： A method of fabricating an air gap type Film Bulk Acoustic Resonator (FBAR) is provided. The FBAR fabrication method includes: (a) depositing and patterning a sub-electrode on a semiconductor substrate; (b) depositing and patterning a piezoelectric material layer on the sub-electrode; (c) depositing and patterning an upper electrode on the piezoelectric material layer; (d) forming a hole which passes through the upper electrode, the piezoelectric material layer and the sub-electrode; and (e) injecting a fluorine compound into the hole so that an air gap can be formed on the semiconductor substrate, and non-plasma etching the semiconductor substrate. Since the FBAR fabrication method does not include forming and eliminating the sacrificial layer in the fabrication process, the fabrication process is simplified. In addition, the air gap having the limitless frequency selectivity can be formed and the performance of the FBAR can be enhanced.

    摘要翻译： 提供了一种制造气隙型膜体积声谐振器（FBAR）的方法。 FBAR制造方法包括：（a）在半导体衬底上沉积和图案化子电极; （b）在子电极上沉积和图案化压电材料层; （c）在压电材料层上沉积和图案化上电极; （d）形成穿过上电极，压电材料层和副电极的孔; 和（e）将氟化合物注入到孔中，使得能够在半导体衬底上形成气隙，并且不等离子体蚀刻半导体衬底。 由于FBAR制造方法不包括在制造工艺中形成和消除牺牲层，所以制造工艺简化。 此外，可以形成具有无限频率选择性的气隙，并且可以提高FBAR的性能。