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    Electronic component and method for manufacturing the same
    2.
    发明公开
    Electronic component and method for manufacturing the same 审中-公开
    Elektronisches Bauelement und Verfahren zur Herstellung desselben

    公开(公告)号：EP1489740A3

    公开(公告)日：2006-06-28

    申请号：EP04013234.2

    申请日：2004-06-04

    申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

    发明人： Namba, Akihiko ,  Onishi, Keiji ,  Takeda, Katsu

    IPC分类号： H03H3/02 ,  H03H9/17

    CPC分类号： H03H9/564 ,  B41J2002/14266 ,  H03H3/04 ,  H03H9/173 ,  H03H9/174 ,  H03H9/175 ,  H03H2003/0435 ,  H03H2003/0478 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49128 ,  Y10T29/4913 ,  Y10T29/49135

    摘要： An electronic component is provided with a substrate (101); a piezoelectric material layer (102) supported directly or indirectly by the substrate (101); a first electrode (103) arranged on a surface of the piezoelectric material layer (102) on an opposite side of the substrate; and a second electrode (104) arranged on a surface of the piezoelectric material layer on the substrate side. The piezoelectric material layer (102) is sandwiched between the first electrode (103) and the second electrode (104). The first electrode (103) has a smaller surface area than the piezoelectric material layer (102). A portion where the piezoelectric material layer (102) is exposed from the first electrode (103) includes a portion that is thinner than a thickness of the piezoelectric material layer between the first electrode and the second electrode. Thus, it is possible to configure a resonator with a higher frequency than its ordinary resonance, and it is easy to achieve an adjustment of the resonance frequency of the resonator, as well as improving the yield of the component and enabling the configuration of an electronic component that includes a plurality of resonators of different frequencies.

    摘要翻译： 电子部件设置有基板（101）; 由所述基板（101）直接或间接支撑的压电材料层（102）; 布置在所述压电材料层（102）的与所述基板相反的一侧的表面上的第一电极（103） 以及布置在基板侧的压电材料层的表面上的第二电极（104）。 压电材料层（102）夹在第一电极（103）和第二电极（104）之间。 第一电极（103）具有比压电材料层（102）更小的表面积。 压电材料层（102）从第一电极（103）露出的部分包括比第一电极和第二电极之间的压电材料层的厚度薄的部分。 因此，可以构成具有比其普通谐振更高的频率的谐振器，并且容易实现谐振器的谐振频率的调节，以及提高部件的产量并且能够构造电子 该组件包括多个不同频率的谐振器。

    Electronic component and method for manufacturing the same
    5.
    发明公开
    Electronic component and method for manufacturing the same 审中-公开
    相同的电子设备和用于制备方法

    公开(公告)号：EP1489740A2

    公开(公告)日：2004-12-22

    申请号：EP04013234.2

    申请日：2004-06-04

    申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

    发明人： Namba, Akihiko ,  Onishi, Keiji ,  Takeda, Katsu

    IPC分类号： H03H3/02 ,  H03H9/17

    CPC分类号： H03H9/564 ,  B41J2002/14266 ,  H03H3/04 ,  H03H9/173 ,  H03H9/174 ,  H03H9/175 ,  H03H2003/0435 ,  H03H2003/0478 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49128 ,  Y10T29/4913 ,  Y10T29/49135

    摘要： An electronic component is provided with a substrate (101); a piezoelectric material layer (102) supported directly or indirectly by the substrate (101); a first electrode (103) arranged on a surface of the piezoelectric material layer (102) on an opposite side of the substrate; and a second electrode (104) arranged on a surface of the piezoelectric material layer on the substrate side. The piezoelectric material layer (102) is sandwiched between the first electrode (103) and the second electrode (104). The first electrode (103) has a smaller surface area than the piezoelectric material layer (102). A portion where the piezoelectric material layer (102) is exposed from the first electrode (103) includes a portion that is thinner than a thickness of the piezoelectric material layer between the first electrode and the second electrode. Thus, it is possible to configure a resonator with a higher frequency than its ordinary resonance, and it is easy to achieve an adjustment of the resonance frequency of the resonator, as well as improving the yield of the component and enabling the configuration of an electronic component that includes a plurality of resonators of different frequencies.

    PROCEDE DE REALISATION COLLECTIVE DE FILTRES A ONDES ACOUSTIQUES
    6.
    发明公开
    PROCEDE DE REALISATION COLLECTIVE DE FILTRES A ONDES ACOUSTIQUES 审中-公开
    PROCEDE DE REALIZATION COLLECTIVE DE FILTRES A ONDES ACOUSTIQUES

    公开(公告)号：EP3202037A1

    公开(公告)日：2017-08-09

    申请号：EP15731961.7

    申请日：2015-06-29

    申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives

    发明人： REINHARDT, Alexandre ,  DAVID, Jean-Baptiste

    IPC分类号： H03H9/54 ,  H03H3/007 ,  H03H9/02 ,  H03H9/56 ,  H03H9/70 ,  H03H9/72 ,  H03H3/02 ,  H03H3/04

    CPC分类号： H03H3/04 ,  H03H3/0073 ,  H03H3/0076 ,  H03H7/38 ,  H03H9/542 ,  H03H9/545 ,  H03H9/568 ,  H03H9/64 ,  H03H9/6403 ,  H03H9/70 ,  H03H9/706 ,  H03H9/725 ,  H03H2003/0071 ,  H03H2003/027 ,  H03H2003/0464 ,  H03H2003/0471 ,  H03H2003/0478 ,  H03H2009/02165 ,  H03H2009/02173 ,  H03H2009/02196 ,  H03H2009/02204 ,  H03H2009/02496 ,  H03H2210/012 ,  H03H2210/023 ,  H03H2210/033

    摘要： The invention relates to a method for the batch production of acoustic wave filters, including the following main steps: synthesising N theoretical filters, each filter being defined on the basis of a group of j theoretical resonator(s) having a triplet C
    0ij,eq , ω
    rij,eq and ω
    aij,eq , said parameters being grouped together into one or more sub-groups; determining a reference resonator structure for each sub-group, which naturally has a resonance frequency ω
    r,ref where ω
    aij,eq r,ref rij,eq ; determining, for each theoretical resonator, a basic building block comprising an intermediate resonator R';
    j , a parallel reactance Xp
    ij and/or a series reactance Xs
    ij , the intermediate resonator R'
    ij having a triplet C
    0ij , ω
    r,ref and ω
    a,ref , the parameters ω
    0ij , Xp
    ij et/ou Xs
    ij being defined such that the basic building block has a triplet: C
    0ij,eq , ω
    rij,eq and ω
    aij,eq ; determining the geometric dimensions of the actual resonators R
    ij so that they have a capacitance C
    0ij ; producing each one of said actual resonators; associating series and/or parallel reactances with said actual resonators in order to form the basic building blocks. The present invention makes it possible for a bank of acoustic filters to be produced on the same chip. Whereas, according to the production methods of the prior art, each separate filter requires the own technological stack thereof and therefore a different production batch, the invention makes it possible to use the same production batch for a wide variety of filters.

    摘要翻译： 谐振电路包括输入端子和输出端子，并且至少包括：一组N个谐振器，其中N≥1，谐振器具有相同的谐振频率和相同的反谐振频率; 具有非零电抗的第一和第二阻抗匹配元件，所述第一元件与所述谐振器组串联，并且所述第二元件与所述谐振器组并联，所述谐振电路包括：用于控制 一组谐振器，使该组的静态电容能够被固定在第一值; 第二控制装置，使第一阻抗匹配元件的阻抗和第二元件的阻抗固定在第二值; 第一和第二值使得由该组的静态电容，第一元件的阻抗和第二元件的阻抗组成的三元组可以用于确定以下三个参数：特性阻抗Zc 由所述组，第一阻抗匹配元件和第二匹配元件形成的组件; 组件的共振频率ωr; 该组件的反共振频率ωa，以便在选定的特性阻抗处稳定电路的阻抗。

    CIRCUIT RESONANT A FREQUENCE ET A IMPEDANCE VARIABLES
    7.
    发明公开
    CIRCUIT RESONANT A FREQUENCE ET A IMPEDANCE VARIABLES 审中-公开
    电路对变化频率和阻抗的影响

    公开(公告)号：EP3010149A2

    公开(公告)日：2016-04-20

    申请号：EP15187022.7

    申请日：2015-09-28

    申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

    发明人： DAVID, Jean-Baptiste ,  REINHARDT, Alexandre

    IPC分类号： H03H9/54 ,  H03H3/007 ,  H03H9/02 ,  H03H9/56 ,  H03H9/70 ,  H03H9/72 ,  H03H3/02 ,  H03H3/04

    CPC分类号： H03H3/04 ,  H03H3/0073 ,  H03H3/0076 ,  H03H7/38 ,  H03H9/542 ,  H03H9/545 ,  H03H9/568 ,  H03H9/64 ,  H03H9/6403 ,  H03H9/70 ,  H03H9/706 ,  H03H9/725 ,  H03H2003/0071 ,  H03H2003/027 ,  H03H2003/0464 ,  H03H2003/0471 ,  H03H2003/0478 ,  H03H2009/02165 ,  H03H2009/02173 ,  H03H2009/02196 ,  H03H2009/02204 ,  H03H2009/02496 ,  H03H2210/012 ,  H03H2210/023 ,  H03H2210/033

    摘要： L'invention a pour objet un circuit résonant comprenant une borne d'entrée (Pe) et une borne de sortie (Ps) et au moins :
    - un groupe de N résonateurs avec N ≥1, ayant la même fréquence de résonance et la même fréquence d'antirésonance ;
    - un premier et un second éléments d'adaptation d'impédance (Cs, Cp) présentant une réactance non nulle, le premier élément étant en série avec ledit groupe de résonateurs, et le second élément étant en parallèle avec ledit groupe de résonateurs

    ledit circuit résonant comprenant :
    - des premiers moyens de commande dudit groupe de résonateurs permettant de fixer la capacité statique (C 0 ) dudit groupe à une première valeur ;
    - des second moyens de commande permettant de fixer l'impédance du premier élément et celle du second élément à des secondes valeurs ;

    lesdites première et secondes valeurs étant telles que : le triplet de valeurs : capacité statique dudit groupe / impédance du premier élément/ impédance du second élément (C 0 , Cs, Cp) permet de déterminer le triplet de paramètres suivants :
    o l'impédance caractéristique Z c de l'ensemble constitué par ledit groupe, ledit premier élément d'adaptation d'impédance et ledit second élément d'adaptation ;
    o la fréquence de résonance ω r dudit ensemble;
    o la fréquence d'antirésonance ω a dudit ensemble,

    pour stabiliser l'impédance dudit circuit à une impédance caractéristique choisie.

    摘要翻译： 本发明涉及一种包括输入端（PE）和输出端子（PS）和至少一个共振电路： - 一组N个具有相同的谐振频率和相同的N≥1谐振器 反共振频率; - 第一和第二调整阻抗元件（CS，CP）具有非零电抗串联与所述第一元件，所述组谐振器，并且所述第二元件在平行是与组的所述电路谐振器 谐振，包括： - 第一控制装置，所述谐振器组用于将所述组为第一值的静电电容（C0）; - 所述第二控制装置，用于设定第一构件的阻抗与所述第二元件到第二值; 所述第一和第二值是这样的：值的三重态：第一元件/第二阻抗元件（C0，铯，CP）的所述组/阻抗的静态电容，以确定以下参数中的三线态：○的特性阻抗Zc 由所述组，所述第一阻抗匹配元件和所述第二匹配元件组成的组; ○所述组的共振频率ωr; øωA反谐振所述组件的频率，稳定的阻抗，所述电路对所选择的特性阻抗。

    Method of tuning a bulk acoustic wave device
    8.
    发明公开
    Method of tuning a bulk acoustic wave device 有权
    调谐体声波装置的制造方法

    公开(公告)号：EP1233510A3

    公开(公告)日：2003-04-02

    申请号：EP02250518.4

    申请日：2002-01-25

    申请人： Nokia Corporation

    发明人： Ellä, Juha ,  Tikka, Pasi ,  Kaitila, Jyrki

    IPC分类号： H03H3/013

    CPC分类号： H03H3/04 ,  H03H2003/0428 ,  H03H2003/0435 ,  H03H2003/0478 ,  Y10T29/42

    摘要： A method and system for tuning a bulk acoustic wave device at the wafer level by adjusting the thickness of the device. In particular, the thickness of the device has a non-uniformity profile across the device surface. A mask with an aperture is placed over the device surface and a particle beam is applied over the mask so as to allow part of the particle beam to make contact with the device surface at a localized area beneath the aperture. The particles that pass through the aperture are deposited on the device surface to add material on the device surface, thereby increasing the surface thickness to correct for the thickness non-uniformity. Alternatively, the particles that pass through the aperture remove part of the device surface in an etching process, thereby reducing the surface thickness. Prior to thickness adjustment, a frequency measurement device or thickness measurement device is used to map the device surface for obtaining the non-uniformity profile.

    Method of tuning a bulk acoustic wave device
    9.
    发明公开
    Method of tuning a bulk acoustic wave device 有权
    Verfahren zur Abstimmung einer akustischen Volumenwellenanordnung

    公开(公告)号：EP1233510A2

    公开(公告)日：2002-08-21

    申请号：EP02250518.4

    申请日：2002-01-25

    申请人： Nokia Corporation

    发明人： Ellä, Juha ,  Tikka, Pasi ,  Kaitila, Jyrki

    IPC分类号： H03H3/013

    CPC分类号： H03H3/04 ,  H03H2003/0428 ,  H03H2003/0435 ,  H03H2003/0478 ,  Y10T29/42

    摘要： A method and system for tuning a bulk acoustic wave device at the wafer level by adjusting the thickness of the device. In particular, the thickness of the device has a non-uniformity profile across the device surface. A mask with an aperture is placed over the device surface and a particle beam is applied over the mask so as to allow part of the particle beam to make contact with the device surface at a localized area beneath the aperture. The particles that pass through the aperture are deposited on the device surface to add material on the device surface, thereby increasing the surface thickness to correct for the thickness non-uniformity. Alternatively, the particles that pass through the aperture remove part of the device surface in an etching process, thereby reducing the surface thickness. Prior to thickness adjustment, a frequency measurement device or thickness measurement device is used to map the device surface for obtaining the non-uniformity profile.

    摘要翻译： 一种通过调节器件的厚度来调整晶片级的体声波器件的方法和系统。 特别地，器件的厚度在器件表面上具有不均匀性。 具有孔径的掩模放置在器件表面上，并且将粒子束施加在掩模上，以允许部分粒子束在孔下方的局部区域处与器件表面接触。 穿过孔的颗粒沉积在器件表面上以在器件表面上添加材料，从而增加表面厚度以校正厚度不均匀性。 或者，通过孔的颗粒在蚀刻过程中去除器件表面的一部分，从而降低表面厚度。 在厚度调整之前，使用频率测量装置或厚度测量装置来映射装置表面以获得不均匀性。