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    METHOD FOR PRODUCING COMPOSITE WAFER PROVIDED WITH OXIDE SINGLE-CRYSTAL THIN FILM
    1.
    发明公开
    METHOD FOR PRODUCING COMPOSITE WAFER PROVIDED WITH OXIDE SINGLE-CRYSTAL THIN FILM 审中-公开
    生产提供有氧化物单晶薄膜的复合晶片的方法

    公开(公告)号：EP3306644A1

    公开(公告)日：2018-04-11

    申请号：EP16803411.4

    申请日：2016-06-01

    申请人： Shin-Etsu Chemical Co., Ltd.

    发明人： AKIYAMA, Shoji ,  KAWAI, Makoto

    IPC分类号： H01L21/02 ,  H01L21/265 ,  H01L21/425 ,  H01L27/12 ,  H01L41/187 ,  H01L41/312

    CPC分类号： H01L41/335 ,  B32B18/00 ,  B32B37/18 ,  B32B38/0036 ,  B32B38/10 ,  B32B2457/00 ,  C23C14/48 ,  C23C14/5833 ,  C30B29/30 ,  H01L21/02 ,  H01L21/76254 ,  H01L41/1873 ,  H01L41/312 ,  H03H9/02559

    摘要： Provided is a composite wafer having an oxide single-crystal film transferred onto a support wafer, the film being a lithium tantalate or lithium niobate film, and the composite wafer being unlikely to have cracking or peeling caused in the lamination interface between the film and the support wafer. More specifically, provided is a method of producing the composite wafer, including steps of: implanting hydrogen atom ions or molecule ions from a surface of the oxide wafer to form an ion-implanted layer inside thereof; subjecting at least one of the surface of the oxide wafer and a surface of the support wafer to surface activation treatment; bonding the surfaces together to obtain a laminate; heat-treating the laminate at 90°C or higher at which cracking is not caused; and applying ultrasonic vibration to the heat-treated laminate to split along the ion-implanted layer to obtain the composite wafer.

    摘要翻译： 本发明提供一种在支撑晶片上转印有氧化物单晶膜的复合晶片，所述膜为钽酸锂或铌酸锂膜，并且所述复合晶片不易在所述膜与所述膜之间的层压界面处产生裂纹或剥离 支持晶圆。 更具体而言，提供一种制造复合晶片的方法，包括以下步骤：从氧化物晶片的表面注入氢原子离子或分子离子以在其内部形成离子注入层; 对氧化物晶片的表面和支撑晶片的表面中的至少一个进行表面活化处理; 将表面粘合在一起以获得层压体; 在90℃或更高的温度下对层压体进行热处理，在该温度下不会产生裂纹; 对该热处理层叠体施加超声波振动，使其沿着离子注入层分裂而得到复合晶片。

    WANDLER FÜR SAW MIT UNTERDRÜCKTER MODENKONVERSION
    3.
    发明公开
    WANDLER FÜR SAW MIT UNTERDRÜCKTER MODENKONVERSION 审中-公开
    WANDLERFÜRSAW MITUNTERDRÜCKTERMODENKERSVERSION

    公开(公告)号：EP3235131A1

    公开(公告)日：2017-10-25

    申请号：EP15804469.3

    申请日：2015-12-02

    申请人： Snaptrack, Inc.

    发明人： EBNER, Thomas ,  MAYER, Markus ,  RÖSLER, Ulrike ,  DADGAR JAVID, Gholamreza ,  BEREK, Stefan

    IPC分类号： H03H9/02

    CPC分类号： H03H9/02818 ,  H03H9/02559 ,  H03H9/02992 ,  H03H9/25

    摘要： Disclosed is a SAW- or PSAW-type acoustic wave transducer in which a dielectric (DK) is applied to the substrate in such a way that the gap (GP) between the ends of the electrode fingers and the opposite bus electrode is entirely filled with the dielectric (DK), but the active region of the transducer, i.e. the transverse overlapping area (UB) between the electrode fingers, is not covered by the dielectric (DK).

    摘要翻译： 公开了一种SAW或PSAW型声波换能器，其中以这样的方式将电介质（DK）施加到基板，使得电极指的端部和相对的总线电极之间的间隙（GP）完全被填充 电介质（DK），但换能器的有源区（即电极指之间的横向重叠区（UB））不被电介质（DK）覆盖。

    SAW DEVICE AND METHOD FOR MANUFACTURING SAW DEVICE
    4.
    发明公开
    SAW DEVICE AND METHOD FOR MANUFACTURING SAW DEVICE 有权
    SAW器件和制造SAW器件的方法

    公开(公告)号：EP3226286A1

    公开(公告)日：2017-10-04

    申请号：EP15862238.1

    申请日：2015-11-27

    申请人： Kyocera Corporation

    发明人： UMEHARA, Motohiro ,  NABESHIMA, Yutaka

    IPC分类号： H01L23/04 ,  H01L23/08 ,  H03H3/08 ,  H03H9/25

    CPC分类号： H03H9/25 ,  H01L23/04 ,  H01L23/08 ,  H01L41/23 ,  H01L41/29 ,  H01L41/312 ,  H01L2924/0002 ,  H03H3/08 ,  H03H9/02559 ,  H03H9/1071 ,  H03H9/14538 ,  H01L2924/00

    摘要： A SAW device includes a SAW element, a conductor connected to the SAW element, an LT substrate including the SAW element, and a case for housing the LT substrate including the SAW element. The case includes a cover part, a lateral part, and a bottom part. The bottom part is including a sapphire substrate, the LT substrate is positioned on a first surface of the sapphire substrate, the first surface serving as an inner surface of the case, and a second surface opposite to the first surface serves as an outer surface of the case. The conductor includes a via conductor provided in a through-hole continuously penetrating through the sapphire substrate and the LT substrate.

    摘要翻译： SAW器件包括SAW元件，连接到SAW元件的导体，包括SAW元件的LT基板以及用于容纳包括SAW元件的LT基板的壳体。 壳体包括盖部分，侧部分和底部分。 底部包括蓝宝石衬底，LT衬底位于蓝宝石衬底的第一表面上，第一表面用作壳体的内表面，并且与第一表面相对的第二表面用作蓝宝石衬底的外表面 案子。 导体包括设置在贯穿蓝宝石衬底和LT衬底的通孔中的通孔导体。

    ACCOUSTIC WAVE ELEMENTS, ANTENNA DUPLEXERS AND ELECTRONIC DEVICES
    5.
    发明公开
    ACCOUSTIC WAVE ELEMENTS, ANTENNA DUPLEXERS AND ELECTRONIC DEVICES 有权
    声音波元件，天线双工器和电子设备

    公开(公告)号：EP3068049A2

    公开(公告)日：2016-09-14

    申请号：EP16159654.9

    申请日：2016-03-10

    申请人： Skyworks Panasonic Filter Solutions Japan Co., Ltd.

    发明人： KOMATSU, Tomoya ,  SHIMIZU, Hidehito ,  FUJIWARA, Joji ,  TSURUNARI, Tetsuya ,  NAKAMURA, Hiroyuki

    IPC分类号： H03H9/02 ,  H03H9/64 ,  H03H9/72

    CPC分类号： H03H9/25 ,  H03H9/02559 ,  H03H9/02834 ,  H03H9/6496 ,  H03H9/725

    摘要： An acoustic wave element comprising a lithium tantalate substrate having the Euler angles (ϕ, θ, ψ), a first component ϕ satisfying 10°≤ ϕ ≤ 50°; and an electrode disposed on the lithium tantalate substrate and configured to excite a main acoustic wave of wavelength λ, the electrode having a density ρ M satisfying ρ M ≥ ρ Ti where ρ Ti represents a density of titanium (Ti), and a thickness h M of the electrode satisfies 0.141 x exp(-0.075ρ M )λ ≤ h M ≤ 0.134λ. Embodiments of the present disclosure minimize a thickness of the electrode and suppress a spurious Rayleigh wave signal.

    摘要翻译： 一种声波元件，其特征在于，由具有欧拉角（φ，θ，ψ）的钽酸锂基板构成，第一分量满足10°≤φ≤50°， 以及设置在所述钽酸锂基板上并配置为激发波长为λ的主声波的电极，所述电极具有满足ρM≥ρTi的密度ρM，其中ρTi表示钛（Ti）的密度，并且所述电极的厚度hM满足 0.141×exp（-0.075ρM）λ≤hM≤0.1344λ。 本公开的实施例最小化电极的厚度并抑制寄生瑞利波信号。

    SURFACE ACOUSTIC WAVE DEVICE
    6.
    发明公开
    SURFACE ACOUSTIC WAVE DEVICE 审中-公开
    OBERFLÄCHENSCHALLWELLENREGELUNG

    公开(公告)号：EP3007357A1

    公开(公告)日：2016-04-13

    申请号：EP14804827.5

    申请日：2014-05-21

    申请人： Murata Manufacturing Co., Ltd.

    发明人： KIKUCHI, Taku ,  FUKUSHIMA, Masahiro

    IPC分类号： H03H9/25 ,  H01L23/02 ,  H01L23/08

    CPC分类号： H03H9/25 ,  H03H9/02559 ,  H03H9/02574 ,  H03H9/02834 ,  H03H9/02897 ,  H03H9/02929 ,  H03H9/02992 ,  H03H9/1042 ,  H03H9/1071 ,  H03H9/14541

    摘要： The interior of a surface acoustic wave device is maintained in an airtight condition even when thermal stress generated in the device in an environment subjected to temperature variations. The surface acoustic wave device (1) includes a piezoelectric substrate (11), a dielectric film (12), IDT electrodes (13, 14), and a resin member (15). The surface acoustic wave device (1) includes a resin contact region (RC) where the piezoelectric substrate (11) and the resin member (15) are in direct contact with each other. The resin contact region (RC) has a shape surrounding the IDT electrodes (13, 14). Because the resin member (15) exhibits a strong adhesion force with respect to the piezoelectric substrate (11), peeling-off between the piezoelectric substrate (11) and the resin member (15) can be suppressed, and an airtight condition can be maintained in the interior of the surface acoustic wave device (1).

    摘要翻译： 即使在受到温度变化的环境中的装置中产生的热应力，表面声波装置的内部也保持在气密状态。 表面声波装置（1）包括压电基板（11），电介质膜（12），IDT电极（13,14）和树脂部件（15）。 表面声波装置（1）包括压电基板（11）和树脂构件（15）彼此直接接触的树脂接触区域（RC）。 树脂接触区域（RC）具有围绕IDT电极（13,14）的形状。 由于树脂构件（15）相对于压电基板（11）具有很强的粘附力，因此可以抑制压电基板（11）和树脂构件（15）之间的剥离，并且可以保持气密状态 在声表面波装置（1）的内部。

    Tunable filter
    9.
    发明公开
    Tunable filter 审中-公开
    可调谐滤波器

    公开(公告)号：EP2533422A3

    公开(公告)日：2013-07-17

    申请号：EP12183354.5

    申请日：2011-01-28

    申请人： Murata Manufacturing Co., Ltd.

    发明人： Kadota, Michio ,  Kobayashi, Kideaki ,  Ogami, Takashi

    IPC分类号： H03H7/12 ,  H03H9/02 ,  H03H9/64 ,  H03H9/05 ,  H03H7/38 ,  H03H9/54

    CPC分类号： H03H9/6403 ,  H03H7/12 ,  H03H7/1708 ,  H03H7/175 ,  H03H7/38 ,  H03H9/02559 ,  H03H9/0542 ,  H03H9/542 ,  H03H9/6483 ,  H03H2007/386 ,  H03H2009/02204

    摘要： To provide a tunable filter capable of magnifying a pass band width or increasing a frequency variable amount. A tunable filter (1) where a resonator circuit portion (S11, S12) is provided in at least one of a series arm connecting an input terminal (22) and an output terminal (23) to each other and a parallel arm connecting the series arm and a ground potential to each other, a first variable capacitor (C2, C3) is connected in series to the resonator circuit portion (S11, S12), and a second variable capacitor (CP1, CP2) is connected in parallel to the resonator circuit portion (S11, S12), wherein the resonator circuit portion includes a piezoelectric substrate (11) including LiNbO 3 or LiTaO 3 , an elastic wave resonator including an electrode (12) formed on the piezoelectric substrate (11), and a bandwidth extending inductance (Lx, Lx) connected to the elastic wave resonator.