DISPLAY SYSTEM HAVING 1-DIMENSIONAL PIXEL ARRAY WITH SCANNING MIRROR

    公开(公告)号:EP4439152A2

    公开(公告)日:2024-10-02

    申请号:EP24183680.8

    申请日:2020-01-27

    Inventor: ABELE, Nicolas

    Abstract: Display systems are described including augmented 1-dimensional pixel arrays and scanning mirrors. In one example, a pixel array includes first and second columns of pixels, relay optics configured to receive incident light and to output the incident light to a viewer, and a scanning mirror disposed to receive the light from the first and second columns of pixels and to reflect the received light toward the relay optics. The scanning mirror may move between a plurality of positions while the first and second columns emit light in temporally spaced pulses so as to form a perceived image at the relay optics having a higher resolution relative to the pixel pitch of the individual columns. Foveated rendering may provide for more efficient use of power and processing resources.

    Image display device
    8.
    发明授权

    公开(公告)号:EP2782343B1

    公开(公告)日:2018-06-27

    申请号:EP13193955.5

    申请日:2013-11-21

    Abstract: A change in the white balance caused due to the temperature is reduced in an image display device using MEMS and a laser light source. An image processing unit of the device superposes a signal based on a first measured value of a light quantity at a first temperature on a image signal to be supplied to the laser light source. An amplification factor of the light source drive unit is changed so that a second measured value at a second temperature comes close to the first measured value at the first temperature as a target value based on the second measured value at which the light quantity of light generated at the laser light source is measured at the second temperature different from the first temperature on the signal based on the first measured value.

    APPARATUS AND METHOD FOR COMBINING MULTIPLE ELECTROMAGNETIC BEAMS INTO A COMPOSITE BEAM

    公开(公告)号:EP1747683B1

    公开(公告)日:2018-06-20

    申请号:EP05742341.0

    申请日:2005-04-20

    CPC classification number: H04N9/3164 H04N9/3105 H04N9/3129 H04N9/3141

    Abstract: A beam combiner includes a first beam-input face, a beam-output face, and first and second reflectors. The first beam-input face receives first and second beams of electromagnetic energy respectively having a first and second wavelengths. The first reflector reflects the first received beam toward the beam-output face, and the second reflector passes the first beam from the first reflector and reflects the received second beam toward the beam-output face. In one alternative, the first beam-input face also receives a third beam of electromagnetic energy having a third wavelength, the beam combiner includes a third reflector that reflects the received third beam toward the beam-output face, and the first and second reflectors pass the third beam from the third reflector. In another alternative, the beam combiner includes a second beam-input face that receives a third beam directed toward the beam-output face, and the first and second reflectors pass the third beam

    LOW POWER EDGE-EMITTING LASER DIODE AND LASER DIODE MODULE
    10.
    发明公开
    LOW POWER EDGE-EMITTING LASER DIODE AND LASER DIODE MODULE 审中-公开
    低功率边缘发射激光二极管和激光二极管模块

    公开(公告)号:EP3291387A1

    公开(公告)日:2018-03-07

    申请号:EP17179246.8

    申请日:2017-07-03

    Applicant: Exalos AG

    Abstract: A low power, edge-emitting ridge laser diode formed from a semiconductor heterostructure having an active layer sandwiched between n- and p-type layers, the active layer forming a gain medium of width W. Front and back reflectors of reflectivity Rf and Rb are arranged on opposing side facets of the semiconductor heterostructure to form a cavity of length L containing the active layer which thus forms the gain medium with internal loss αi. To achieve stable, low power operation close to threshold, the laser diode is configured with: width W: 1 µm ≤ W ≤ 2 µm; cavity length L: 100 µm ≤ L ≤ 600 µm; internal loss αi: 0 cm -1 ≤ αi ≤ 30 cm -1 ; back reflectivity Rb: 100 ≥ Rb ≥ 80%; and front reflectivity Rf: 100 ≥ Rf ≥ 60%. The laser diode has a characteristic slope efficiency, for output powers

    Abstract translation: 由半导体异质结构形成的低功率边缘发射脊型激光二极管,其具有夹在n型和p型层之间的有源层,有源层形成宽度W的增益介质。反射率Rf和Rb的前和后反射器是 布置在半导体异质结构的相对侧面上以形成包含有源层的长度为L的谐振腔,谐振腔由此形成具有内部损耗α1的增益介质。 为了实现接近阈值的稳定的低功率操作,激光二极管配置为:宽度W:1μm≤W≤2μm; 腔长L:100μm≤L≤600μm; 内部损失αi:0cm-1≤αi≤30cm-1; 背反射率Rb:100≥Rb≥80%; 前反射率Rf:100≥Rf≥60%。 激光二极管具有特征斜率效率,输出功率<1 mW,<0.5 mW / mA。

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