Thin film piezoelectric device for acoustic resonators
    6.
    发明公开
    Thin film piezoelectric device for acoustic resonators 有权
    PiezoelektrischesDünnschicht-Bauelementfürakustische Resonatoren

    公开(公告)号:EP1054460A3

    公开(公告)日:2005-01-19

    申请号:EP00303561.5

    申请日:2000-04-27

    申请人: TDK Corporation

    摘要: A thin film piezoelectric device has an epitaxial metal thin film (4) on a silicon substrate (2) and a PZT thin film (5) on the metal thin film, the PZT thin film (5) having a Ti/(Ti+Zr) atomic ratio between 0.65 and 0.90. Preferably the metal film (4) comprises at Pt group metal and is formed on an oriented faceted buffer layer (3) comprising zirconium oxide and/or rare earth oxide. A film bulk acoustic resonator having an extremely broad band is realized.

    摘要翻译: 薄膜压电元件在金属薄膜上的硅衬底(2)和PZT薄膜(5)上具有外延金属薄膜(4),PZT薄膜(5)具有Ti /(Ti + Zr )原子比在0.65和0.90之间。 优选地,金属膜(4)包括Pt族金属,并且形成在包含氧化锆和/或稀土氧化物的定向小平面缓冲层(3)上。 实现了具有极宽带的薄膜体声波谐振器。