摘要:
[Problem] Chloropolysilane having a low metallic impurity concentration has been required to be obtained in order to be used for semiconductor applications. However, it is difficult by distillation to remove impurities such as a titanium compound having a vapor pressure close to that of chloropolysilane and an aluminum compound having a sublimating property. Meanwhile, when the content of metallic impurities such as aluminum and titanium reduces in metallic silicon that is a raw material, chlorination reaction is less likely to occur unless a reaction temperature is raised and that causes equipment to be restricted. It is found that a chlorination reaction can be carried out at a relatively low temperature by heating a mixture of granular metallic silicon and metallic copper or a copper compound in an inert atmosphere even when the metallic silicon has a high purity and does not contain aluminum and titanium and that chloropolysilane of high purity can be obtained by further adding metallic silicon as needed after the chlorination reaction is started.
摘要:
A method is disclosed for producing uranium oxide (22) which includes combining uranium tetrafluoride (10), silicon (12), and a gaseous anhydrous oxidizing agent (13) having a lower thermodynamic stability than any oxide of uranium produced. The combination is then heated (14) below the vapor point of the uranium tetrafluoride to sufficiently react the uranium tetrafluoride, silicon and the oxidizing agent to produce uranium oxide and a non-radioactive fluorine compound (16). The fluorine compound is then removed (18) and collected (20).
摘要:
Es wird ein Verfahren zur Steigerung des Anteils an Siliciumtetrachlorid bei der Umsetzung von Chlorwasserstoff oder einer Mischung von Chlorwasserstoff und Chlor mit metallisches Silicium enthaltenden Stoffen beschrieben. Hierbei setzt man Chlorsilane bei einer Temperatur von 300 o C bis 1 400 o C zu.
摘要:
Intermetallic compounds, such as metal silicides, e.g ., PdSi and/or Pd 2 Si, can be selectively prepared in a two step process including the steps of (1 ) vacuum impregnating silicon with a metal halide, and (2) ball milling the product of step (1).
摘要:
The invention relates to polysilanes of medium chain length as pure compounds or a mixture of compounds, each with at least one direct Si-Si bond, the substituents of said polysilanes consisting exclusively of halogen and/or hydrogen, the medium chain length n thereof being greater than 3 and smaller than 50, preferably greater than 3 and smaller than 9 and particularly preferred being greater than 3 and smaller than 7, and the atomic ratio of substituent:silicon in the composition thereof being at least 1:1. The invention also relates to a method for the production of same.
摘要:
A method is provided for producing GeCl4 with or without SiCl4 from optical fibers, the method comprises the steps of: reacting comminuted optical fibers including germanium and optionally silicon oxides with a reagent including a solid carbonaceous reducing agent, chlorine and a boron compound to obtain a gaseous product including gaseous GeCl4, gaseous SiCl4, and gaseous BCl3 in accordance with the reactions: 2BCl3(g) + 1.5GeO2 = 1.5GeCl4(g) + B2O3; 2BCl3(g) + 1.5 SiO2 = 1.5 SiCl4(g) + B2O; B2O3 + 1.5C + 3Cl2 = 2BCl3(g) + 1.5CO2; and then condensing the gaseous GeCl4, BCl3 and optionally SiCl4 into liquid GeCl4, BCl3 and optionally SiCl4. The invention further provides a method for producing SiCl4 (and optionally GeCl4) from glassy residues obtained from optical fiber manufacturing and wasted optical cables. The method includes the steps of: reacting comminuted glassy residues with a reagent including a solid carbonaceous reducing agent, a salt, a boron compound to obtain a gaseous product including SiCl4, BCl3, and optionally GeCl4; and then condensing the gaseous SiCl4, BCl3 (with or without GeCl4) into liquid SiCl4, BCl3 and GeCl4. There is also provided a method for producing SiCl4 from a SiO2 containing material.