摘要:
The present invention relates to a novel composition with improved stability containing soluble, multi-ligand-substituted metal compound, a polyol compound and a solvent useful for filling material on photoresist patterns with good trench or via filling properties of microlithographic features, where the filled patterns having good plasma etch resistance in oxygen based plasmas and are used as a hard mask in forming fine patterns on semiconductor substrates by pattern transfer of this hard mask. The present invention further relates to using the novel composition in methods for manufacturing electronic devices.
摘要:
A crystallized layer can be formed on a substrate from a precursor layer deposited on a surface of the substrate. The precursor layer can be an oxide, a nitride, a carbide, or an oxynitride. The process for forming the crystallized layer includes melting the precursor layer formed on the surface of the substrate by localized topical heating of the precursor layer and then cooling the melted precursor layer so that it crystallized to form a scratch resistant crystallized layer. The scratch resistant crystallized layer can have a hardness of 15 GPa or greater.
摘要:
Solution derived nanocomposite (SDN) precursor solutions are disclosed that comprise one or more metal precursors that are dissolved in a liquid comprising polar protic and polar aprotic solvents. The precursor solutions are characterized by the formation of a gel after a shear force is applied to the precursor solution or to a thin layer of precursor solution. Also disclosed are methods using such precursor solutions to make thin films, thin films made using the precursor solutions, thin films having a minimum surface area and devices containing thin films as disclosed herein.