公开(公告)号：EP3344972B1

公开(公告)日：2022-12-14

申请号：EP16843152.6

申请日：2016-09-02

发明人： ADELL, Philippe, C. ,  ATWATERE, Harry, A.

IPC分类号： G01N21/63 ,  G01N21/27 ,  H01L29/40 ,  G01R31/26 ,  H01L21/66 ,  G01N21/95 ,  G01R31/265

公开(公告)号：EP3839529B1

公开(公告)日：2022-04-27

申请号：EP20837186.4

申请日：2020-07-06

发明人： CHENG, Qian ,  XIE, Weiya ,  GAO, Ya ,  CHEN, Yiming ,  CHEN, Yingna ,  ZHANG, Mengjiao ,  ZHANG, Haonan ,  WU, Shiying

IPC分类号： G01N29/04 ,  G01N29/24 ,  G01R31/26 ,  G01R31/265 ,  G01N21/17

公开(公告)号：EP3089077B1

公开(公告)日：2018-09-12

申请号：EP16166301.8

申请日：2016-04-21

申请人： Bundesdruckerei GmbH

发明人： PETERS, Florian ,  SCHOLZE, Steffen

IPC分类号： G06K19/07 ,  G06K19/077 ,  G01R31/265

CPC分类号： G06K19/0723 ,  G01R31/265 ,  G06K19/0716 ,  G06K19/07707 ,  G06K19/07749

公开(公告)号：EP2677302B1

公开(公告)日：2017-10-11

申请号：EP11858857.3

申请日：2011-02-15

申请人： YSystems Ltd.

发明人： Yves Lacroix

IPC分类号： G01N21/64 ,  G01N21/17 ,  G01R31/265 ,  H01L21/66

CPC分类号： G01N21/6408 ,  G01N21/6489 ,  G01N21/66 ,  G01N2021/1719 ,  G01R31/2656 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：EP1982202B1

公开(公告)日：2010-07-07

申请号：EP07704273

申请日：2007-01-31

申请人： UNIV AIX MARSEILL III PAUL CEZANNE

发明人： PALAIS OLIVIER ,  PASQUINELLI MARCEL

IPC分类号： G01R31/265 ,  G01R31/28

CPC分类号： G01R31/311

公开(公告)号：EP2149054A2

公开(公告)日：2010-02-03

申请号：EP08826185.4

申请日：2008-05-19

申请人： IMEC

发明人： SCHAUS, Frederic ,  CLARYSSE, Trudo

IPC分类号： G01R31/265

CPC分类号： G01R31/311 ,  G01R31/2648

摘要： The invention relates to a junction-photo voltage method and apparatus for contactless determination of an electrical and/or physical parameter of a semiconductor structure comprising at least one p-n junction located at a surface, wherein the method comprises the steps of: illuminating the surface with the p-n junction of the semiconductor structure with a light beam of a first wavelength to create excess carriers at the surface; modulating the light intensity of the light beam at a single predefined frequency; determining a first photo-voltage at a first position inside the illuminated area and determining a second photo-voltage at at least a second position outside the illuminated area; and calculating an electrical and/or physical parameter of the semiconductor structure based on the first photo-voltage and on the second photo- voltage. In this way, a fast, accurate and easy to use possibility for contactless determination of an electrical and/or physical parameter of a semiconductor structure is provided.

公开(公告)号：EP1982202A1

公开(公告)日：2008-10-22

申请号：EP07704273.7

申请日：2007-01-31

申请人： UNIVERSITE PAUL CEZANNE AIX-MARSEILLE III

发明人： PALAIS, Olivier ,  PASQUINELLI, Marcel

IPC分类号： G01R31/265 ,  G01R31/28

CPC分类号： G01R31/311

摘要： The invention relates to a light source for injecting excess carriers into a semiconductor wafer, fully illuminating a surface of the wafer (4). According to the invention, the source (1) includes at least one set of point sources (2) which are spaced apart at regular intervals along the X and Y axes, such that the source emits a monochromatic beam of a size that is at least equal to that of the semiconductor wafer surface to be illuminated. Each of the point sources (2) is sinusoidally modulated by a common electrical modulator (3), the distance (d) between two point sources and the distance (D) between the source (1) and the semiconductor wafer surface (4) to be illuminated being selected such that the monochromatic light beam uniformly illuminates said surface.

公开(公告)号：EP1202069A2

公开(公告)日：2002-05-02

申请号：EP01125239.2

申请日：2001-10-24

申请人： NEC CORPORATION

发明人： Nikawa, Kiyoshi, NEC Corporation

IPC分类号： G01R31/265 ,  H01L21/66

CPC分类号： G01R31/311

摘要： To provide a non-destructive inspection method including: a first step of generating a laser light ranging in wavelength from 300 nm to 1,200 nm, and generating a laser beam converging into a predetermined beam diameter; a second step of predetermined electrical connection means configuring a predetermined current path for passing an OBIC current generated by an OBIC phenomenon when the laser beam is radiated onto the p-n junction and the vicinity of the p-n junction formed in the semiconductor chip to be inspected at least in the substrate including a wafer state and an installation state during the production process; a third step of scanning a predetermined area of a semiconductor chip while radiating the laser beam; a fourth step of magnetic flux detection means detecting magnetic flux induced by the OBIC current generated by the laser beam at each radiation point scanned in the third step; and a fifth step of determining whether or not there is a resistance increase defect including a disconnection defect or a leak defect including a short circuit defect in the current path including the radiation point of said semiconductor chip based on said magnetic flux detected in the fourth step.

公开(公告)号：EP1155337A1

公开(公告)日：2001-11-21

申请号：EP00982794.0

申请日：2000-12-07

申请人： Gelcore Company

发明人： GHANEM, Mohamed, Sherif

IPC分类号： G01R31/265

CPC分类号： H05B33/0854 ,  G01R31/2653 ,  Y10T307/593

摘要： A sensor circuit for detecting a current supplied to a non-linear light-emitting diode (LED) and for producing a current reading dependent on temperature. The sensor circuit comprises first and second serially interconnected resistors also connected in series with the LED, and a temperature-dependent impedance connected in parallel with one of the first and second resistors. At least a portion of the current through the LED flows through the sensor circuit to enable the first and second serially interconnected resistors and said temperature-dependent impedance to produce a variable voltage signal representative of the current through the LED and dependent on temperature.

公开(公告)号：EP1095285A1

公开(公告)日：2001-05-02

申请号：EP99936474.8

申请日：1999-07-02

申请人： Amecon GmbH

发明人： ORSCHEL, Benno ,  HELM, Jan ,  SROCKA, Bernd

IPC分类号： G01R31/265

CPC分类号： G01R31/2656

摘要： To determine the dependence of a first measured quantity (Y) on a second measured quantity (P) the second measured quantity (P) is periodically modified with a frequency (f0). The first measured quantity (Y), which changes accordingly, is measured. From the first measurement signal of the first measured quantity (Y) the components of the first measured quantity (Y) are determined with at least a plurality of frequencies. From the components determined in this way the first measured quantity (Y) is reconstructed by signal processing for at least a plurality of values of the second measured quantity (P).