ELECTRON SOURCE, X-RAY SOURCE AND DEVICE USING THE X-RAY SOURCE

    公开(公告)号:EP4439620A3

    公开(公告)日:2025-05-07

    申请号:EP24195049.2

    申请日:2015-08-19

    Abstract: The present disclosure is directed to an electron source (1) and an X-ray source using the same. The electron source (1) of the present invention comprises: at least two electron emission zones (11, 12, 13), each of which comprises a plurality of micro electron emission units (100). The micro electron emission unit (100) comprises: a base layer (101), an insulating layer (102) on the base layer (101), a grid layer (103) on the insulating layer (102), an opening (105) in the grid layer (103), and an electron emitter (104) that is fixed at the base layer (101) and corresponds to a position of the opening (105). The micro electron emission units (100) in the same electron emission zone (11, 12, 13) are electrically connected and simultaneously emit electrons or do not emit electrons at the same time, and different electron emission zones (11, 12, 13) are electrically partitioned.

    X-RAY CATHODE FOCUSING ELEMENT
    5.
    发明公开

    公开(公告)号:EP4202968A2

    公开(公告)日:2023-06-28

    申请号:EP22212785.4

    申请日:2022-12-12

    Inventor: KRUSE, Kevin

    Abstract: Various methods and systems are provided for a cathode (300) of an X-ray imaging system (10). A method (600) for fabricating the cathode (300) comprises machining a plurality of focusing features (528, 530, 502, 504) on a focusing element (375) and welding the focusing element (375) to a base assembly (360).

    ON-CHIP MICRO ELECTRON SOURCE AND MANUFACTURING METHOD THEREOF

    公开(公告)号:EP3882948A1

    公开(公告)日:2021-09-22

    申请号:EP19885587.6

    申请日:2019-11-07

    Abstract: Provided are an on-chip micro electron source and manufacturing method thereof. The on-chip micro electron source is provided with a heat conductive layer (10), and at least one electrode (122) in the same pair of electrodes is connected with the heat conductive layer (10) via a through hole (111) of an insulating layer, such that the heat generated by the on-chip micro electron source can be dissipated through the electrode (122) and the heat conductive layer (10), thereby significantly improving the heat dissipation ability of the on-chip electron source. Therefore, the on-chip micro electron source is capable of integrating multiple single electron sources on the same substrate to form an electron source integration array with a high integration level, enabling the on-chip electron source to have high overall emission current, further meeting more application requirements. The on-chip micro electron source can be widely applied to various electronic devices involving electron sources, for example, X-ray tubes, microwave tubes, flat-panel displays and the like.

    TUNEABLE CHARGED PARTICLE VORTEX BEAM GENERATOR AND METHOD

    公开(公告)号:EP3510621A1

    公开(公告)日:2019-07-17

    申请号:EP16760752.2

    申请日:2016-09-07

    Abstract: The present invention refers to a device for generating charged particle beams with tunable orbital angular momentum. The device firstly includes one or more components for providing a charged particle beam. It is further characterized by an electrical arrangement for imparting a tunable orbital angular momentum to the charged particle beam during operation. The orbital angular momentum of the produced charged particle vortex beam is tunable by adjusting the amount of electrical current. The chirality of the produced charged particle vortex beam is switchable by reversing the direction of the electrical current. The generation of the charged particle vortex beam from the present invention does not depend on the energy of the charged particle beams. The generation of the charged particle vortex beams from the present invention is predictable and reproducible.

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