公开(公告)号：EP3596759A2

公开(公告)日：2020-01-22

申请号：EP18714726.9

申请日：2018-03-15

Applicant: Eto Magnetic GmbH

Inventor： SCHNETZLER, René ,  SCHIEPP, Thomas ,  ECKHARDT, Harald

IPC: H01L41/06 ,  H01L41/12 ,  H01L41/20

公开(公告)号：EP2466662B1

公开(公告)日：2015-05-27

申请号：EP10806398.3

申请日：2010-07-30

Applicant: Tohoku Techno Arch Co., Ltd.

Inventor： INOUE Akihisa ,  MOTOE Yoshitsugu ,  NAKASHIMA Koji ,  ISHIKAWA Tomohito ,  SUGIYAMA Masaharu ,  IGARASHI Takanori ,  WAKIWAKA Hiroyuki ,  MAKINO Akihiro

IPC: H01L41/12 ,  C22C45/02 ,  G01L3/10 ,  H01F10/13 ,  C22C33/00 ,  G01R33/18 ,  H01L41/47 ,  H01L41/20 ,  C23C4/06

CPC classification number: G01L3/102 ,  C22C33/003 ,  C22C45/02 ,  C23C4/06 ,  G01L3/103 ,  G01L3/105 ,  G01R33/18 ,  H01F10/131 ,  H01L41/125 ,  H01L41/20 ,  H01L41/47 ,  Y10T428/265

Abstract: For providing a magnetostrictive film that can exhibit high magnetostrictive properties in the vicinity of zero magnetic field and their manufacturing methods, a magnetostrictive film thermal sprayed on an object under test includes a metallic glass film subjected to thermal processing at a temperature lower than the glass transition temperature and not lower than the Curie point, and shows a linearity between the magnetic field and the magnetostriction in at least a part of the magnetic field from -15 kA/m to +15 kA/m (both inclusive).

公开(公告)号：EP2339595A1

公开(公告)日：2011-06-29

申请号：EP09015426.1

申请日：2009-12-14

Applicant: ETO MAGNETIC GMBH

Inventor： Laufenberg, Markus, Dr. ,  Pagounis, Emmanouel, Dr.

IPC: H01F1/03 ,  H01L41/20 ,  C22C19/00 ,  C22C19/05

CPC classification number: H01F1/0308 ,  C22C19/03 ,  C22C19/058 ,  H01L41/20

Abstract: Die Erfindung betrifft ein magnetisches Formgedächtnislegierungsmaterial mit einer Curietemperatur (TC) sowie einer Phasenübergangstemperatur (TA) von einer martensitischen in eine austenitische Phase, aufweisend Ni, Mn, Ga sowie mindestens Co in der Zusammensetzung Ni a Mn b Ga C Co d Fe e Cu f , wobei a, b, c, d, e und f in Atom-% angegeben sind und die Bedingungen

        44 ≤ a ≤ 51;

        19 ≤ b ≤ 30;

        18 ≤ c ≤ 24;

        0.1 ≤ d ≤ 15;

        0 ≤ e ≤ 14,9;

        0 ≤ f ≤ 14,9;

        d+e+f ≤ 15;

        a+b+c+d+e+f = 100;

erfüllen.

Abstract translation: 要求具有居里温度和马氏体相组成中包含镍，锰，镓和钴的奥氏体相的相变温度的磁形记忆合金材料。 一种具有居里温度和包含镍，锰，镓和钴的奥氏体相的马氏体相转变温度的磁形记忆合金材料，其结构式为（Ni a Mn b Ga c Co d Fe e C u f）（I） 其中：af的值以原子％给出; 调节d的值使得居里温度和相变温度大于65℃; 并且在大于700℃的温度下对成型体进行热处理以进行化学均化.a：44-51; b：19-30; c：18-24; d：0.1-15; e，f：0-14.9，优选为0，其中d + e + f = 15，优选为0.5-3，a + b + c + d + e + f为100，e大于0，f 等于0，或e等于0，f大于0，或e + f = 3，其中d + e + f = 6。对于由使用材料制成的形状记忆元件，包括独立权利要求 作为致动器中的致动器元件和/或传感器中的传感器元件。

公开(公告)号：EP1399932A4

公开(公告)日：2008-11-05

申请号：EP02734424

申请日：2002-05-15

Applicant: ENERGEN INC

Inventor： JOSHI CHANDRASHEKHAR H ,  TAI CHIU-YING

IPC: H01F1/03 ,  H01L41/20 ,  H01F1/055

CPC classification number: H01F1/055 ,  H01L41/20

Abstract: A Terbium-Dysprosium-Iron magnetostrictive material of the type Tb1-xDyxFe2-y wherein x is less than 0.7, and y is less than or equal to 0.1, and devices using these materials.

公开(公告)号：EP1825236A4

公开(公告)日：2007-12-12

申请号：EP05740754

申请日：2005-05-03

Applicant: MDT CO LTD

Inventor： CHOI BUM KYOO ,  OH JAE GEUN

IPC: G01L1/12 ,  B81B3/00 ,  G01L5/00 ,  G01L9/16 ,  H01L41/08 ,  H01L41/12 ,  H01L41/20 ,  H01L41/22 ,  H01L41/47

CPC classification number: G01L1/14

Abstract: A variable inductor type MEMS pressure sensor using a magnetostrictive effect comprises an inductor array unit and a capacitor unit. The inductor array unit includes a coil unit having a plurality of serially connected circular electrodes formed on a first substrate and a magnetostrictive material thin film corresponding one by one to the circular electrode formed on a second substrate opposite to the first substrate at a predetermined distance in parallel to form an inductor which has the magnetostrictive material thin film as a core of the coil unit for inducing change of magnetic permeability of the magnetostrictive thin film depending on external pressure to vary inductance of the inductor. The capacitor unit constitutes a LC resonant circuit with the inductor array unit to convert magnetic energy discharged in the inductor array unit into a voltage. The variable inductor type MEMS pressure sensor has an excellent resolution because it is more sensitive than a conventional piezoresistive or capacitance sensor, and is manufactured using a MEMS process technology exchangeable with a semiconductor process, thereby enabling miniaturization and a mass package process to reduce the cost of production.

公开(公告)号：EP1479086A4

公开(公告)日：2006-12-13

申请号：EP03743688

申请日：2003-02-21

Applicant: UNIV CALIFORNIA

Inventor： CARMAN GREGORY P ,  MCKNIGHT GEOFFREY P DR

IPC: B22F1/02 ,  B29C70/62 ,  B22F3/00 ,  B22F3/02 ,  H01F1/03 ,  H01F1/055 ,  H01F1/06 ,  H01F1/08 ,  H01F1/26 ,  H01L41/20 ,  H01L41/22

CPC classification number: B29C70/62 ,  B29K2995/0003 ,  B29K2995/0008 ,  B29K2995/0041 ,  B29K2995/0044 ,  H01F1/0558 ,  H01F1/063 ,  H01L41/20 ,  H01L41/47

Abstract: Magnetostrictive particulate composites with a preferred crystal orientation of the particles and methods for their manufacture are described. In a representative embodiment, a 25% volume Terfenol-D fraction polymer matrix composite was fabricated in a magnetic field using geometric anisotropy to orient needle shaped particles with long axis [112] orientation along the length of the composite. Results demonstrate that the magnetostriction of a [112] oriented particle composite saturates near 1600 ppm. This is a significant increase when compared to composites without preferential orientation (1200 ppm) and represents the largest reported magnetostriction for a particulate composite material.

公开(公告)号：EP1016096A4

公开(公告)日：2002-05-22

申请号：EP98904892

申请日：1998-02-04

Applicant: SENSORMATIC ELECTRONICS CORP

Inventor： LIAN MING-REN ,  O'HANDLEY ROBERT C

IPC: G08B13/24 ,  H01F1/04 ,  H01F1/14 ,  H01F1/153 ,  H01L41/12 ,  H01L41/20 ,  H01L41/00

CPC classification number: G08B13/2408 ,  G08B13/244 ,  G08B13/2442 ,  H01F1/15308 ,  H01F1/15341 ,  H01L41/20

Abstract: A self-biasing magnetostrictive element (10) for use in a magnetomechanical EAS marker is a strip of amorphous alloy material distributed throughout the bulk of the amorphous alloy strip. The crystalline particles (12) are magnetized to bias the amorphous alloy strip (14) to resonate in response to an interrogation signal. The crystalline particles (12) are formed by heat-treating the amorphous alloy strip (14) at a temperature above the Curie temperature of the amorphous alloy in the presence of a longitudinal magnetic field. The alloy strip (14) is then cross-field annealed at a temperature below the Curie temperature of the amorphous alloy to form a transverse anisotropy in the amorphous bulk of the alloy strip (14). A preferred alloy composition includes iron, cobalt, niobium, copper, boron and silicon.

公开(公告)号：EP0809306B1

公开(公告)日：2001-12-12

申请号：EP97106866.3

申请日：1997-04-25

Applicant: Forschungszentrum Karlsruhe GmbH ,  Centre National de la Recherche Scientifique, Laboratoire de Magnétisme Louis Néel

Inventor： Quandt, Eckhard, Dr. ,  Ludwig, Alfred ,  Givord, Dominique ,  Mackay, Ken ,  Betz, Jochen

IPC: H01L41/20

CPC classification number: H01L41/20

公开(公告)号：EP1124268A2

公开(公告)日：2001-08-16

申请号：EP01102795.0

申请日：2001-02-09

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Arai, Tomohisa, ,  Yamamiya, Hideki, ,  Okamura, Masami, ,  Kobayashi, Tadahiko,

IPC: H01L41/20

CPC classification number: H01L41/20

Abstract: Giant magnetostrictive material, with an alloy including a rare earth element and a transition metal element, is obtained by dissolving nitrogen interstitially in the alloy. Nitrogen is introduced in the alloy in the range from 0.01 to 2.5 % by mass. Nitrogen introducing treatment is carried out at a temperature of 600°C or less. A content of nitrogen compound present in magnetostrictive alloy, by a ratio of a content of nitrogen in the nitrogen compound to a total nitrogen content in the alloy, is reduced to be 0.05 or less by mass ratio. Almost all of the added nitrogen is interstitially dissolved between crystal lattice. In giant magnetostrictive material using melt quench flakes, the flakes are stacked in a thickness direction that is a direction of growth of columnar grain essentially constituting the flake material to integrate in this state.

Abstract translation: 通过在合金中间隙地将氮溶解，获得含有稀土元素和过渡金属元素的合金的巨磁致伸缩材料。 合金中氮气的含量为0.01〜2.5质量％。 氮气导入处理在600℃以下的温度下进行。 通过氮化合物中的氮含量与合金中的总氮含量的比率，磁致伸缩合金中存在的氮化合物的含量按质量比减少到0.05以下。 几乎所有添加的氮在晶格之间间隙地溶解。 在使用熔融淬火薄片的大型磁致伸缩材料中，薄片以厚度方向堆叠，该厚度方向是基本上构成薄片材料的柱状晶粒的生长方向，以在该状态下结合。

公开(公告)号：EP0868754B1

公开(公告)日：1999-09-22

申请号：EP96942475.3

申请日：1996-12-17

Applicant: The University of Hull

Inventor： JENNER, Alan Gordon Ian ,  PRAJAPATI, Kamlesh

IPC: H01L41/20 ,  H01F1/03

CPC classification number: C22C28/00 ,  H01F1/0306 ,  H01L41/20