Lamb wave device
    3.
    发明授权
    Lamb wave device 有权
    Lamb波安排

    公开(公告)号:EP1947765B1

    公开(公告)日:2012-04-11

    申请号:EP06811192.1

    申请日:2006-10-04

    摘要: A structure which is a device using a lamb wave and can effectively control spurious due to a mode not desired. A lamb wave device (1) comprising a base substrate (2), a piezoelectric thin film (3) formed on the base substrate (2) and having a portion that is levitated from the base substrate (2) and has a first surface (3a) facing the base substrate (2) and a second surface (3b) on the opposite side to the first surface, and an IDT electrode (4) disposed on at least one of the first and the second surface of the piezoelectric thin film (3), wherein the piezoelectric thin film (3) consists of LiTaO3 or LiNbO3 and is a rotation twin crystal with the c axis of the piezoelectric thin film (3) oriented in almost the same direction of the normal to the first and second surfaces of the piezoelectric thin film (3) and with the c axis as the rotation axis thereof.

    Piezo-electric substrate and manufacturing method of the same
    4.
    发明公开
    Piezo-electric substrate and manufacturing method of the same 有权
    Piezoelektrisches Substrat und Herstellungsverfahrendafür

    公开(公告)号:EP1885062A1

    公开(公告)日:2008-02-06

    申请号:EP07014595.8

    申请日:2007-07-25

    IPC分类号: H03H3/08 H03H3/10 H03H9/02

    摘要: A piezo-electric substrate 1 is mainly comprised of a base material 11, and a film 12 formed on one main surface of the base material 11. In the base material 11, the main surface on which the film 12 is formed is a roughed main surface 11a. The piezo-electric substrate 1 is obtained by forming the film 12 comprised of a material with a coefficient of linear expansion smaller than a coefficient of linear expansion of the base material 11 on the roughened main surface 11a using a thermal spraying method.

    摘要翻译: 压电基板1主要包括基材11和形成在基材11的一个主表面上的膜12.在基材11中,形成有膜12的主表面是粗糙的主体 表面11a。 压电基板1通过使用热喷涂法在粗糙化主表面11a上形成由线性膨胀系数小于基材11的线膨胀系数的材料构成的膜12而获得。

    Surface acoustic wave device
    6.
    发明公开
    Surface acoustic wave device 失效
    AkustischeOberflächenwellenanordnung

    公开(公告)号:EP0722218A1

    公开(公告)日:1996-07-17

    申请号:EP95110005.6

    申请日:1995-06-27

    IPC分类号: H03H9/02 H03H3/10

    CPC分类号: H03H9/02834 H03H3/10 H03H9/08

    摘要: A SAW device (11) includes a SAW element (13) which is bonded onto a support substrate (12) in a face down mode through solder (19, 20), and a metal cap (21) enclosing the SAW element (13). Assuming that α 1 , α 2 and α 3 represent the thermal expansion coefficients of the SAW element (13), the support substrate (12) and the conductive cap (21) along the surface wave propagation direction respectively, α 3 ≧ α 1 when α 1 > α 2 , and α 3 ≦ α 1 when α 1 2 .

    摘要翻译: SAW器件(11)包括通过焊料(19,20)以面朝下模式结合到支撑衬底(12)上的SAW元件(13)和包围SAW元件(13)的金属盖(21) 。 假设α1,α2和α3分别表示SAW元件(13),支撑衬底(12)和导电盖(21)沿着表面波传播方向的热膨胀系数,α3> / =α 1,当α1>α2,α3时,α1 <α2