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1.发明公开
公开(公告)号：EP4416321A1
公开(公告)日：2024-08-21
申请号：EP22800502.1
申请日：2022-09-29
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2.发明公开
公开(公告)号：EP4271864A1
公开(公告)日：2023-11-08
申请号：EP21848493.9
申请日：2021-12-31
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公开(公告)号：EP4271863A1
公开(公告)日：2023-11-08
申请号：EP21848443.4
申请日：2021-12-29
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4.发明授权
公开(公告)号：EP4028583B1
公开(公告)日：2023-10-04
申请号：EP20760995.9
申请日：2020-08-04
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公开(公告)号：EP4119703A1
公开(公告)日：2023-01-18
申请号：EP22188569.2
申请日：2014-03-11
发明人： NODA, Akira , OTA, Masaru , Hirano, Ryuichi
IPC分类号： C30B29/42 , C30B15/22 , C30B27/02 , H01L31/0735 , C30B29/40 , C30B15/20 , C30B15/30 , H01L31/18 , C30B15/04 , H01L31/0304
摘要： In this photoelectric conversion element wherein group III-IV compound semiconductor single crystals containing zinc as an impurity are used as a substrate, the substrate is increased in size without lowering conversion efficiency. A heat-resistant crucible is filled with raw material and a sealant, and the raw material and sealant are heated, thereby melting the raw material into a melt, softening the encapsulant, and covering the melt from the top with the encapsulant. The temperature inside the crucible is controlled such that the temperature of the top of the encapsulant relative to the bottom of the encapsulant becomes higher in a range that not equal or exceed the temperature of bottom of the encapsulant, and seed crystal is dipped in the melt and pulled upward with respect to the melt, thereby growing single crystals from the seed crystal. Thus, a large compound semiconductor wafer that is at least two inches in diameter and has a low dislocation density of 5,000 cm -2 can be obtained, despite having a low average zinc concentration of 5 x 10 17 cm -3 to 3 x 10 18 cm -3 , at which a crystal hardening effect does not manifest.
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公开(公告)号：EP3902942A1
公开(公告)日：2021-11-03
申请号：EP19836380.6
申请日：2019-12-13
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公开(公告)号：EP3828319A1
公开(公告)日：2021-06-02
申请号：EP20217266.4
申请日：2014-03-11
发明人： NODA, Akira , OTA, Masaru , HIRANO, Ryuichi
IPC分类号： C30B29/42 , C30B15/22 , C30B27/02 , H01L31/0735 , C30B29/40 , C30B15/20 , C30B15/30 , H01L31/18 , C30B15/04 , H01L31/0304
摘要： In this photoelectric conversion element wherein group III-IV compound semiconductor single crystals containing zinc as an impurity are used as a substrate, the substrate is increased in size without lowering conversion efficiency. A heat-resistant crucible is filled with raw material and a sealant, and the raw material and sealant are heated, thereby melting the raw material into a melt, softening the encapsulant, and covering the melt from the top with the encapsulant. The temperature inside the crucible is controlled such that the temperature of the top of the encapsulant relative to the bottom of the encapsulant becomes higher in a range that not equal or exceed the temperature of bottom of the encapsulant, and seed crystal is dipped in the melt and pulled upward with respect to the melt, thereby growing single crystals from the seed crystal. Thus, a large compound semiconductor wafer that is at least two inches in diameter and has a low dislocation density of 5,000 cm -2 can be obtained, despite having a low average zinc concentration of 5 x 10 17 cm -3 to 3 x 10 18 cm -3 , at which a crystal hardening effect does not manifest.
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公开(公告)号：EP3828250A1
公开(公告)日：2021-06-02
申请号：EP21150088.9
申请日：2016-02-18
摘要： A scintillation crystal can include a rare earth silicate, an activator, and a Group 2 co-dopant. In an embodiment, the Group 2 co-dopant concentration may not exceed 200 ppm atomic in the crystal or 0.25 at% in the melt before the crystal is formed. The ratio of the Group 2 concentration/activator atomic concentration can be in a range of 0.4 to 2.5. In another embodiment, the scintillation crystal may have a decay time no greater than 40 ns, and in another embodiment, have the same or higher light output than another crystal having the same composition except without the Group 2 co-dopant. In a further embodiment, a boule can be grown to a diameter of at least 75 mm and have no spiral or very low spiral and no cracks. The scintillation crystal can be used in a radiation detection apparatus and be coupled to a photosensor.
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公开(公告)号：EP3390697A1
公开(公告)日：2018-10-24
申请号：EP16809829.1
申请日：2016-12-14
发明人： VEIRMAN, Jordi , ALBARIC, Mickaël , STADLER, Jacky
摘要： The invention relates to a furnace for crystallizing an ingot (14) made of semiconductor material, this furnace comprising: - a crucible (11) having an axis of symmetry (z) and intended to contain a bath (10) of molten semiconductor material; - a system (36) for pulling the ingot from the bath of molten semiconductor material, in a direction collinear with the axis of symmetry (z) of the crucible (11); - a part (12) formed of an oxygen-containing material, said part (12) comprising at least one segment of a ring, having an axis collinear with the axis of symmetry (z) of the crucible (11), the crucible (11) and the part (12) being mounted so as to be able to carry out a relative translational movement parallel to the axis of symmetry (z) of the crucible; and - a heat shield (38) positioned around the axis of symmetry (z) of the crucible (11) and mounted so as to be able to move in translation parallel to the axis of symmetry of the crucible by means of a translation system. The part (12) is fastened to the translation system of the heat shield (38).
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