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    HIGH FREQUENCY SWITCH
    3.
    发明公开
    HIGH FREQUENCY SWITCH 审中-公开

    公开(公告)号：EP3460902A1

    公开(公告)日：2019-03-27

    申请号：EP16907240.2

    申请日：2016-06-28

    申请人： Mitsubishi Electric Corporation

    发明人： KOMARU, Ryota ,  HANGAI, Masatake ,  YAMANAKA, Koji ,  SUGIMOTO, Atsuo

    IPC分类号： H01P1/15

    摘要： A second transistor (2b), which is turned on when a first transistor (2a) is turned off, is shunt-connected between a first transmission line (3a) and a second transmission line (3b). A fourth transistor (2d), which is turned off when a third transistor (2c) is turned on, is shunt-connected between a third transmission line (3c) and a fourth transmission line (3d). Each of a common terminal transmission line (3e), the first and second transmission lines (3a and 3b), and the third and fourth transmission lines (3c and 3d) is set to have an electrical length of a quarter wavelength at the center frequency of an input signal. The first transistor (2a) and the third transistor (2c) are complementary turned on and off, and characteristic impedances of the common terminal transmission line (3e), the first transmission line (3a), and the third transmission line (3c) are set to be lower than those of peripheral circuits.

    Switch circuit and method of switching radio frequency signals
    5.
    发明授权
    Switch circuit and method of switching radio frequency signals 有权
    切换网络和方法，用于切换高频信号

    公开(公告)号：EP2387094B1

    公开(公告)日：2016-05-04

    申请号：EP10011669.8

    申请日：2002-10-10

    申请人： PEREGRINE SEMICONDUCTOR CORPORATION

    发明人： Burgener, Mark L. ,  Cable, James, S.

    IPC分类号： H01P1/15 ,  H03K17/60

    CPC分类号： H03K17/6871 ,  H01P1/15 ,  H03K17/063 ,  H03K17/102 ,  H03K17/693 ,  H03K19/018521 ,  H03K19/0944 ,  H03K2017/0803 ,  H04B1/40

    摘要： A novel RF switch circuit and method for switching RF signals is described. The RF switch circuit is fabricated in a silicon-on-insulator (SOI) technology. The RF switch includes pairs of switching and shunting transistor groupings used to alternatively couple RF input signals to a common RF mode. The switching and shunting transistor grouping pairs are controlled by a switching control voltage (SW) and its inverse (SW). The switching and shunting transistor groupings comprise one or more MOSFET transistors connected together in a "stacked" or serial configuration. The stacking of transistor grouping devices, and associated gate resistors, increase the breakdown voltage across the series connected switch transistors and operate to improve RF switch compression. A fully integrated RF switch is described including digital control logic and a negative voltage generator integrated together with the RF switch elements. In one embodiment, the fully integrated RF switch includes a built-in oscillator, a charge pump circuit, CMOS logic circuitry, level-shifting and voltage divider circuits, and an RF buffer circuit. Several embodiments of the charge pump, level-shifting voltage divider, and RF buffer circuits are described. The inventive RF switch provides improvements in insertion loss, switch isolation, and switch compression.

    DISPOSITIF DE COMMUTATION DE SIGNAUX HYPERFREQUENCES NOTAMMENT DE DIMENSIONS NANOMETRIQUES, ET COMPOSANT ELECTRONIQUE INCORPORANT UN TEL DISPOSITIF
    6.
    发明公开
    DISPOSITIF DE COMMUTATION DE SIGNAUX HYPERFREQUENCES NOTAMMENT DE DIMENSIONS NANOMETRIQUES, ET COMPOSANT ELECTRONIQUE INCORPORANT UN TEL DISPOSITIF 审中-公开
    微波信号切换装置，尤其是在纳米尺寸，和电子元件的利用这样的装置

    公开(公告)号：EP2936682A1

    公开(公告)日：2015-10-28

    申请号：EP13827008.7

    申请日：2013-12-20

    申请人： Thales ,  Universite Des Sciences Et Technologies De Lille ,  Université Paris 6 Pierre et Marie Curie UPMC

    发明人： TRIPON-CANSELIET, Charlotte ,  CHAZELAS, Jean ,  DECOSTER, Didier

    IPC分类号： H03K17/94 ,  H01P1/15

    CPC分类号： H01L31/09 ,  H01L31/0224

    摘要： The present invention relates to a microwave signal switching device, particularly of nanometric size. The invention also relates to an electronic component incorporating such a device. The invention is particularly suitable for use in the field of analog/digital conversion for uses related to the telecommunications field. For example, the invention is suitable for microwave receivers operating at frequencies corresponding to millimeter waves or to receivers having an instantaneous bandwidth of multiple gigahertz. The invention relates to a device for switching an electrical signal, controlled by an optical wave (35) having an on-state and an off state, which can be inserted into a microwave transmission line. The device comprises a semiconductor substrate (20, 21) on which two conductive paths (32, 33) are provided, said paths being separated by a gap (34) ensuring electrical insulation between the two paths which are each connected to an input and output port (36, 37). In the on-state, the electrical contact between the two paths is established by illuminating the substrate in the area (100) of the gap by means of the optical wave. The input impedance and the output impedance of the switching device do not match the impedance of the transmission line in the "off" state and do match the impedance of the transmission line in the on-state.

    SWITCH CIRCUIT AND METHOD OF SWITCHING RADIO FREQUENCY SIGNALS
    7.
    发明授权
    SWITCH CIRCUIT AND METHOD OF SWITCHING RADIO FREQUENCY SIGNALS 有权
    交换网络和方法，用于切换高频信号

    公开(公告)号：EP1451890B2

    公开(公告)日：2015-09-23

    申请号：EP02800982.7

    申请日：2002-10-10

    申请人： PEREGRINE SEMICONDUCTOR CORPORATION

    发明人： BURGENER, Mark, L. ,  CABLE, James, S.

    IPC分类号： H01P1/15 ,  H03K17/60

    CPC分类号： H03K17/6871 ,  H01P1/15 ,  H03K17/063 ,  H03K17/102 ,  H03K17/693 ,  H03K19/018521 ,  H03K19/0944 ,  H03K2017/0803 ,  H04B1/40

    摘要： A novel RF switch circuit and method for switching RF signals is described. The RF switch circuit is fabricated in a silicon-on-insulator (SOI) technology. The RF switch includes pairs of switching and shunting transistor groupings used to alternatively couple RF input signals to a common RF mode. The switching and shunting transistor grouping pairs are controlled by a switching control voltage (SW) and its inverse (SW). The switching and shunting transistor groupings comprise one or more MOSFET transistors connected together in a "stacked" or serial configuration. The stacking of transistor grouping devices, and associated gate resistors, increase the breakdown voltage across the series connected switch transistors and operate to improve RF switch compression. A fully integrated RF switch is described including digital control logic and a negative voltage generator integrated together with the RF switch elements. In one embodiment, the fully integrated RF switch includes a built-in oscillator, a charge pump circuit, CMOS logic circuitry, level-shifting and voltage divider circuits, and an RF buffer circuit. Several embodiments of the charge pump, level-shifting voltage divider, and RF buffer circuits are described. The inventive RF switch provides improvements in insertion loss, switch isolation, and switch compression.

    HIGH FREQUENCY SWITCHING DEVICE, AND BIAS VOLTAGE OUTPUTTING DEVICE
    9.
    发明公开
    HIGH FREQUENCY SWITCHING DEVICE, AND BIAS VOLTAGE OUTPUTTING DEVICE 审中-公开
    高频开关装置和电压输出装置

    公开(公告)号：EP2717473A4

    公开(公告)日：2015-04-15

    申请号：EP12788866

    申请日：2012-05-23

    申请人： IMAGINEERING INC

    发明人： MAKITA MINORU ,  IKEDA YUJI

    IPC分类号： H03K17/76 ,  H01P1/15 ,  H01P5/16 ,  H03K17/693

    CPC分类号： H03K17/04 ,  H01P1/15 ,  H01P5/16 ,  H03K17/76

    摘要： In a high frequency switch device 33 that switches an output terminal 42 , from which high frequency is outputted, from among a plurality of output terminals 42, to perform the switching the output terminal 42, from which high frequency is outputted, at high speed and with low loss. In the high frequency switch device 33, a branch transmission line 45 corresponding to each output terminal 42 is provided with a switching part 46. In the branch transmission line 45, the switching part 46 includes a transmission side diode 63 that is provided in such a manner that a cathode thereof is arranged on a side of an input terminal 41 and an anode thereof is arranged on a side of the output terminal 42, and a ground side diode 65 that is provided in such a manner that a cathode thereof is grounded and an anode thereof is electrically connected between the output terminal 42 and the transmission side diode 63 in the branch transmission line 45. The branch transmission line 45 includes a first capacitor 51 and a second capacitor 52 on the side of the output terminal 42 from the transmission side diode 63 in such a manner that the anode of the ground side diode 65 is connected between the first capacitor 51 and the second capacitor 52.