Method of manufacturing mirror device
    98.
    发明专利
    Method of manufacturing mirror device 审中-公开
    制造镜像器件的方法

    公开(公告)号:JP2010061155A

    公开(公告)日:2010-03-18

    申请号:JP2009252482

    申请日:2009-11-02

    Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a mirror device to manufacture a mirror with desired warpage quantity. SOLUTION: This method includes a first step to prepare a mirror substrate having the plate-like mirror pivotably supported, a second step to form a first metal layer on one side of the mirror, a third step to form a second metal layer on the other side of the mirror, and a fourth step to place the mirror substrate on an electrode substrate and oppositely arrange an electrode and the mirror. The thickness of at least one of the surface layer 232 and the rear surface layer 233 is controlled. Thereby, the curvature quantity of the mirror 230 is controlled, and the mirror 230 with a desired radius of curvature can be manufactured. COPYRIGHT: (C)2010,JPO&INPIT

    Abstract translation: 要解决的问题:提供制造反射镜装置的方法来制造具有期望翘曲量的反射镜。 解决方案:该方法包括:准备具有可枢转地支撑的板状镜的反射镜基板的第一步骤,在反射镜一侧形成第一金属层的第二步骤,形成第二金属层的第三步骤 在反射镜的另一侧,以及将反射镜基板放置在电极基板上并相反地布置电极和反射镜的第四步骤。 控制表面层232和后表面层233中的至少一个的厚度。 由此,可以控制反射镜230的曲率,并且可以制造具有期望的曲率半径的反射镜230。 版权所有(C)2010,JPO&INPIT

    Mirror device
    99.
    发明专利
    Mirror device 审中-公开
    镜子装置

    公开(公告)号:JP2010061154A

    公开(公告)日:2010-03-18

    申请号:JP2009252479

    申请日:2009-11-02

    Abstract: PROBLEM TO BE SOLVED: To provide a mirror device suppressing the drift of a mirror and having excellent impact resistance. SOLUTION: This mirror device includes the mirror pivotably supported with respect to a mirror substrate, a driving electrode formed on the electrode substrate opposing to the mirror substrate, and an elastic member which connects the mirror to the mirror substrate. The mirror substrate has a first opening. The mirror is pivotably supported inside the first opening by the elastic member. The gaps d1-d4 between the mirror and the elastic member are set larger than a displacement quantity d value of d=mG/k, where the mass of the mirror is m, the acceleration applied to the mirror device is G, and the spring constant of the elastic member is k. Thereby, even when the acceleration G is applied to a mirror array, a movable member of the mirror substrate 200 does not contact a member adjoining the movable member, and thus damaging can be prevented. COPYRIGHT: (C)2010,JPO&INPIT

    Abstract translation: 要解决的问题:提供抑制反射镜漂移并具有优异抗冲击性的反射镜装置。 解决方案:该反射镜装置包括相对于反射镜基板可枢转地支撑的反射镜,形成在与反射镜基板相对的电极基板上的驱动电极,以及将反射镜连接到反射镜基板的弹性部件。 镜面基板具有第一开口。 该反射镜通过该弹性构件可枢转地支撑在第一开口的内部。 反射镜和弹性构件之间的间隙d1-d4被设定为大于d = mG / k的位移量d值,其中反射镜的质量为m,施加到镜装置的加速度为G,弹簧 弹性构件的常数为k。 因此,即使当将加速度G施加到反射镜阵列时,反射镜基板200的可动部件也不与邻接于可动部件的部件接触,能够防止损伤。 版权所有(C)2010,JPO&INPIT

    Minute electromechanical device, semiconductor device, manufacturing method of minute electromechanical device, and manufacturing method of semiconductor device
    100.
    发明专利
    Minute electromechanical device, semiconductor device, manufacturing method of minute electromechanical device, and manufacturing method of semiconductor device 有权
    分电动装置,半导体装置,分电器装置的制造方法以及半导体装置的制造方法

    公开(公告)号:JP2009122031A

    公开(公告)日:2009-06-04

    申请号:JP2007298009

    申请日:2007-11-16

    Inventor: SHIMADA HIROYUKI

    CPC classification number: B81B3/0086 B81B2201/0235 B81B2201/0264 G01P15/124

    Abstract: PROBLEM TO BE SOLVED: To improve the characteristic of a minute electromechanical device and to simplify a manufacturing process. SOLUTION: The minute electromechanical device has a semiconductor layer (1), source and drain regions (13) formed on the opposite sides of a channel region in the semiconductor layer, a gate insulation film (19) formed on the semiconductor layer, a cavity (15a) formed on the gate insulation film and a gate electrode (17) formed on the cavity. The gate electrode is so constituted as to be movable to come into contact with the gate insulation film. The device is so constituted that a force applied onto the gate electrode is detected from the area of contact of the gate electrode with the gate insulation film. Thus, the force applied onto the gate electrode can be detected from the area of the contact. By using a temporary FET structure, the device and the manufacturing process can be simplified. COPYRIGHT: (C)2009,JPO&INPIT

    Abstract translation: 要解决的问题:提高微机电装置的特性,并简化制造过程。 解决方案:微机电装置具有半导体层(1),形成在半导体层中的沟道区的相对侧上的源极和漏极区(13),形成在半导体层上的栅极绝缘膜(19) ,形成在栅绝缘膜上的空腔(15a)和形成在空腔上的栅电极(17)。 栅极被构造成可移动以与栅极绝缘膜接触。 该器件被构造成从栅电极与栅极绝缘膜的接触区域检测施加到栅电极上的力。 因此,可以从接触区域检测施加在栅电极上的力。 通过使用临时FET结构,可以简化器件和制造工艺。 版权所有(C)2009,JPO&INPIT

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