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公开(公告)号：JP5050855B2
公开(公告)日：2012-10-17
申请号：JP2007542618
申请日：2006-10-25
Applicant: Jsr株式会社
IPC: G03F7/11 , H01L21/027
CPC classification number: G03F7/11 , C08F220/18 , C08F220/30 , G03F7/0046 , G03F7/2041
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公开(公告)号：JP5578189B2
公开(公告)日：2014-08-27
申请号：JP2012033060
申请日：2012-02-17
Applicant: Jsr株式会社
IPC: G03F7/11 , H01L21/027
CPC classification number: G03F7/11 , C08F220/18 , C08F220/30 , G03F7/0046 , G03F7/2041
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公开(公告)号：JP5487921B2
公开(公告)日：2014-05-14
申请号：JP2009279137
申请日：2009-12-09
Applicant: Jsr株式会社
IPC: G03F7/039 , C08F20/16 , H01L21/027
Abstract: PROBLEM TO BE SOLVED: To provide a photoresist composition, which is a chemical amplification-type resist having excellent sensitivity and excellently maintaining a mask-error factor (MEEF). SOLUTION: The photoresist composition includes: a polymer (A) having a repeating unit represented by the general formula (1) and having alkaline insolubility or poor alkaline solubility, wherein the polymer becomes alkali-soluble due to action of an acid; and a radiation-sensitive acid generator (B). COPYRIGHT: (C)2011,JPO&INPIT
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25.发明专利
公开(公告)号：JP5481768B2
公开(公告)日：2014-04-23
申请号：JP2006243558
申请日：2006-09-08
Applicant: Jsr株式会社
IPC: G03F7/039 , G03F7/004 , G03F7/38 , H01L21/027
Abstract: PROBLEM TO BE SOLVED: To provide a radiation-sensitive resin composition capable of forming a photoresist film from which an amount of a substance eluted into a liquid for liquid immersion lithography which comes in contact with the photoresist film in liquid immersion lithography is reduced, and which has a large backward contact angle to the liquid for liquid immersion lithography and can form a microscopic resist pattern with a high degree of accuracy. SOLUTION: The radiation-sensitive resin composition is used for forming a photoresist film in a resist pattern forming method including a predetermined liquid immersion lithography process. When the photoresist film is formed, the ratio between the fluorine content (F 1 (atom%)) and carbon content (C 1 (atom%)) of the photoresist film satisfies (F 1 )/(C 1 )=0.01-0.6 as measured and calculated by the following surface element analysis; (surface element analysis): a film surface of the photoresist film is irradiated with X-rays using a photoelectron spectroscopic instrument, the amount of generated secondary electrons is measured at an angle of 90° to the film surface, and the respective distribution quantities of fluorine atoms and carbon atoms in the photoresist film are measured. COPYRIGHT: (C)2008,JPO&INPIT
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Patent Agency Ranking
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28.发明专利
公开(公告)号：JP4666108B2
公开(公告)日：2011-04-06
申请号：JP2010101351
申请日：2010-04-26
Applicant: Jsr株式会社
IPC: G03F7/11 , G03F7/20 , G03F7/38 , H01L21/027
CPC classification number: G03F7/2041 , C08F214/182 , C08F214/186 , C08F216/10 , C08F220/18 , C08F220/24 , G03F7/11 , C08F220/06 , C08F2222/1013
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公开(公告)号：JP5267093B2
公开(公告)日：2013-08-21
申请号：JP2008312515
申请日：2008-12-08
Applicant: Jsr株式会社
Abstract: PROBLEM TO BE SOLVED: To provide an upper layer film-forming composition to be used for an immersion lithography method, the composition capable of improving a depth of focus and giving a good pattern, and to provide an upper layer film obtained from the upper layer film-forming composition, and a pattern forming method using the upper layer film. SOLUTION: The upper layer film-forming composition to be used for forming an upper layer film on the surface of a photoresist film contains: a resin component (A) that dissolves in a developing solution for developing the photoresist film; and an amide group-containing compound (B). COPYRIGHT: (C)2010,JPO&INPIT
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