公开(公告)号：JPS6320820A

公开(公告)日：1988-01-28

申请号：JP16456186

申请日：1986-07-15

Applicant: MITSUBISHI ELECTRIC CORP

Inventor： KAWAGOE YASUYUKI ,  YAMANISHI KENICHIRO ,  YASUNAGA MASASHI

IPC: H01L21/203 ,  H01L21/26

Abstract: PURPOSE:To moderate ionic concentration on the central part of a substrate to enable a thin film uniform in thickness and quality to be formed, by making mesh electrodes be disposed facing to electron-drawing electrodes and on the central side of an ionization part. CONSTITUTION:In an ionization part, mesh electrodes 30 having the same potential as ionization filaments 9 are disposed facing to electrondrawing electrodes 10 and on the central side of the ionization part against the electron-drawing electrodes 10. Disposal of these mesh electrodes 30 allows no thermion is electron13 to exist near the center of the ionization part, eliminating cluster ions formed there. Hence, the amount of clusters concentrated on the central part of the substrate becomes small, so that a distribution of ions on the substrate can be uniformized to improve uniformity in thickness and quality of the formed thin film.

公开(公告)号：JPS6238781A

公开(公告)日：1987-02-19

申请号：JP17966085

申请日：1985-08-13

Applicant: MITSUBISHI ELECTRIC CORP

Inventor： MARUYAMA TOSHIRO ,  MURAKAMI EISHIN ,  YASUNAGA MASASHI

IPC: B23K26/21 ,  B23K15/00

Abstract: PURPOSE:To reduce the stress concentration onto fusion zone and to reduce the generation of cracks by forming a space part between two members and by forming a fusion zone adjacent this space part. CONSTITUTION:A plate 1 and foil 2 are joined with melting by forming a space part 8 between the plate 1 and foil 2 and by irradiating an electron beam 4 on a weld line 3. In this case, bottom part of the fusion zone 6 is formed in a groove 8 and the concentration of stress is extremely small with the joint shape having deep notch not exsisting. The possibility in the crack generation is thus eliminated even in case of the thermal contraction stress in the soldifying stage after welding and load being generated.

公开(公告)号：JPS61247036A

公开(公告)日：1986-11-04

申请号：JP8786685

申请日：1985-04-24

Applicant: MITSUBISHI ELECTRIC CORP

Inventor： YAMANISHI KENICHIRO ,  YASUNAGA MASASHI ,  TSUKASAKI TAKASHI

IPC: H01L21/203 ,  H01L21/31

Abstract: PURPOSE:To enable to form a homogeneous insulative thin film by providing electron generating means for emitting electrons to a thin film forming substrate to reduce a charge-up by ions of depositing ionized material in a vacuum tank. CONSTITUTION:Electrons 29 are generated in the state parallel to the generation of cluster ion beam 17, and emitted to the entire insulative thin film forming region on a substrate 18. To generate the electrons 29, a filament 26a is, for example, heated, and a voltage of approx. several tens - several hundreds V is applied between the filament 26a and an anode 26b, and when a voltage of several tens - 1,000V is applied between the electron drawing electrode 27 and the filament 26b, the electrons 29 are emitted to the entire film forming region on the substrate 18. The electrons 29 are simultaneously emitted into the film deposition, and preferably emitted in the quantity equal to or larger than the quantity of ions 16. Thus, it can prevent the film formed on the substrate 18 from charging up, thereby forming the thin film in the state that no discharge is generated.

公开(公告)号：JPS60255975A

公开(公告)日：1985-12-17

申请号：JP11345684

申请日：1984-05-31

Applicant: MITSUBISHI ELECTRIC CORP

Inventor： FUJISHITA NAOMITSU ,  YASUNAGA MASASHI

IPC: C23C14/48

Abstract: PURPOSE:To obtain an ion implantation apparatus capable of forming a thick ion implanted layer even if performing simultaneously the ion implantation and a thin film formation for base material provided in a vacuum vessel by providing an ion implantation means and a vapor deposition means for forming the thin film on the surface of the base material. CONSTITUTION:In the inside of a vacuum vessel 1 which is reduced till the prescribed degree of vacuum, ion implantation is performed on the base material 15 by an ion implantation means 100 and simultaneously the surface of the base material 15 is vapor-deposited with a cluster ion beam-vapor depositing apparatus 17. Namely, by combinating the ion implantation with the vapor deposition by the cluster ion beam, the diffusing effect of the ion implantation on the base material 15 and the increment of the density due to the ion implantation are simultaneously advanced and the vapor-deposited layer can be continuously formed. Therefore, the thick ion implanted layer is substantially obtained. Further, when the same substance as the base material 15 is used as the vapor depositing substance 19, the ion implanted layer of same quality is obtained. When the substance different from the base material 15 is used, the ion implanted layer of the base material 15, the ion implanted layer mixed with the base material and vapor depositing substance around the boundary of the vapor deposited layer of the base material 15 and also the ion implanted layer of the vapor deposited layer are continuously formed respectively.

公开(公告)号：JPS59189547A

公开(公告)日：1984-10-27

申请号：JP6468583

申请日：1983-04-11

Applicant: Mitsubishi Electric Corp

Inventor： YASUNAGA MASASHI ,  MURAKAMI EISHIN

IPC: H05H5/02 ,  H01J37/24 ,  H01J37/248 ,  H02M7/06

CPC classification number: H01J37/243

Abstract: PURPOSE:To separate current caused by stray capacity and accurately measure output current by installing a resistance used to measure output current in a high potential part and transmitting its detected current to a low potential through a transmission circuit containing optical fiber. CONSTITUTION:Voltage from a low voltage power source is boosted, rectified, and smoothed and beam accelerating voltage is supplied to a charged beam device 20, and output voltage is divided with a voltage divider 7 and introduced from a measuring terminal 9. Output current is detected with a resistance 8 and detected value is modulated with a V/F converter 31 and converted to photo signal with an LED32 and transmitted through an optical fiber 33, and introduced from a current measuring terminal 10 through a photo transistor 34 and an F/V converter 35. Since output current is directly measured on the high potential side, overlapping of current flowing through a stray capacity 11 to output current is prevented and accurate measurement is provided.

Abstract translation: 目的：分离由杂散容量引起的电流，并通过安装用于测量高电位部分中的输出电流的电阻并通过包含光纤的传输电路将其检测到的电流传输到低电位来精确测量输出电流。 构成：来自低压电源的电压被升压，整流和平滑，并且将光束加速电压提供给带电束装置20，并且输出电压被分压器7分压并从测量端子9引入。输出电流为 利用电阻8检测出检测值，并用V / F转换器31进行调制，并用LED32转换成光信号，并通过光纤33传输，并从电流测量端子10通过光电晶体管34和F / V转换器35.由于在高电位侧直接测量输出电流，因此防止了流过杂散电容11的电流与输出电流的重叠，并提供精确的测量。

公开(公告)号：JPS5916874B2

公开(公告)日：1984-04-18

申请号：JP5662380

申请日：1980-04-25

Applicant: Mitsubishi Electric Corp

Inventor： MURAKAMI EISHIN ,  YASUNAGA MASASHI

IPC: H01J37/244 ,  B23K15/00 ,  B23K15/02 ,  H01J37/04 ,  H01J37/315

公开(公告)号：JPS5940450A

公开(公告)日：1984-03-06

申请号：JP15220482

申请日：1982-08-30

Applicant: Mitsubishi Electric Corp

Inventor： YASUNAGA MASASHI ,  HARA KATSUNORI

IPC: H01J37/06 ,  H01J37/24 ,  H01J37/248 ,  H01J37/315

CPC classification number: H01J37/241

Abstract: PURPOSE:To make a device small-sized and perform a stable control by using an insulated transformer to feed a high potential portion accelerating an electron beam and controlling a beam control system with a negative-feedback circuit including a light emitting element, an optical transmission path and a photosensing element. CONSTITUTION:A main power supply 1 is stepped up 1, rectified 3 and applied to a cathode 27. An auxiliary power supply 50 is fed to a filament 9, a bombard power supply 14 and a bias power supply 25 through an insulated transformer 51. An electron beam 30 machines a work 31 and the current value of the beam 30 is detected by a resistor 15. The detected value is compared with the output of a current setter 16 and fed to a PIP regulator 18. The output of the regulator 18 is converted into a light signal by a light emitting diode 52 and fed to a photosensing transistor 54 through an optical fiber cable 53 to be converted into an electric signal. An amplified 55 output is fed to a power transistor 56 to control the input voltage of a transformer 58, and a rectified 23 output is applied across the cathode 27 and a Wehnelt electrode 28. Accordingly, the device can be made small-sized and perform a stable control.

Abstract translation: 目的：通过使用绝缘变压器对加速电子束的高电位部分进行放电，并利用包括发光元件的负反馈电路控制光束控制系统，使设备小型化并进行稳定的控制，光传输 路径和光敏元件。 构成：主电源1升压1，整流3并施加到阴极27.辅助电源50通过绝缘变压器51馈送到灯丝9，轰击电源14和偏置电源25。 电子束30对工件31进行加工，并且由电阻器15检测光束30的当前值。将检测值与电流设定器16的输出进行比较并馈送到PIP调节器18.调节器18的输出 通过发光二极管52转换为光信号，并通过光纤电缆53馈送到感光晶体管54，以转换成电信号。 放大的55输出被馈送到功率晶体管56以控制变压器58的输入电压，并且整流的23输出施加在阴极27和Wehnelt电极28上。因此，该器件可以制成小尺寸并执行 稳定的控制。

公开(公告)号：JPS58189951A

公开(公告)日：1983-11-05

申请号：JP7297682

申请日：1982-04-29

Applicant: Mitsubishi Electric Corp

Inventor： MURAKAMI EISHIN ,  YASUNAGA MASASHI ,  SASAKI SHIGEO

IPC: H01J37/22 ,  H01J37/06 ,  H01J37/24 ,  H01J37/248

CPC classification number: H01J37/243

Abstract: PURPOSE:To increase the maximum beam current obtained from an electron gun, by connecting the voltage having the polarity opposite to a bias power source, to the bias power supply in series and by erasing the self-bias voltage. CONSTITUTION:A bias voltage generating part 31 and a self-bias erasing voltage generating part 32 are of mutually opposite polarity and connected in series to each other. In this power supply device, the output voltage of said voltage generating part 32 is erased by raising highly enough the output voltage of said voltage generating part 31 in order to obtain a high bias voltage. On the other hand, when the output voltage of the voltage generating part 31 is lowered and the bias voltage is forced to approach 0V, self vias current (i) is generated as shown in the figure, then a self-bias voltage is generated across a discharge resistance 33a; however the voltage generating part 32 of opposite polarity is connected in series to said discharge resistance 33a, so that a bias voltage is not generated across a load resistance 25. Consequently, compared with the case where the self-bias erasing voltage generating part 32 is not used, a maximum electron beam current which is about 30% larger than that of said case can be obtained by using the same electron gun.

Abstract translation: 目的：通过将具有与偏置电源相反极性的电压连接到偏置电源并通过擦除自偏压来增加从电子枪获得的最大光束电流。 构成：偏置电压产生部31和自偏置消除电压产生部32的极性彼此相反，并且彼此串联连接。 在该电源装置中，为了获得高的偏置电压，所述电压产生部件32的输出电压被消除，使得所述电压产生部件31的输出电压足够高。 另一方面，当电压产生部分31的输出电压降低并且偏置电压被迫接近0V时，如图所示产生自通电流（i），然后产生自偏压 放电电阻33a; 然而，相反极性的电压产生部分32串联连接到所述放电电阻33a，使得跨负载电阻25不产生偏置电压。因此，与自偏压消除电压产生部分32是 通过使用相同的电子枪，可以获得大于所述情况大约30％的最大电子束电流。

公开(公告)号：JPS58179577A

公开(公告)日：1983-10-20

申请号：JP6350282

申请日：1982-04-14

Applicant: Mitsubishi Electric Corp

Inventor： MURAKAMI EISHIN ,  YASUNAGA MASASHI

IPC: B23K15/02 ,  B23K15/00

CPC classification number: B23K15/0013

Abstract: PURPOSE:To enable titled detection using a relatively simple apparatus even when welding is in progress, by providing a radiation passage that gives unobstructed view of a part near the deepest part of penetration of an object to be welded from outside, and detecting radioactive rays generated from the weld zone through the radiation passage. CONSTITUTION:When an electron beam 6 is irradiated to an object 1 to be welded, X-rays are generated from irradiated part or light is generated from molten part. Accordingly, when a radiation passage 16 that gives an unobstructed view of a part near the deepest part 15 of penetration in the weld zone 1 from outside is provided by piercing the weld zone, light or radioactive rays such as X-rays leak to outside from the passage 16. By detecting the radioactive rays 17 with a detecting element 18, a confirmation signal 19 that indicates that the depth of penetration is deeper than the position of the passage 16 can be obtained.

Abstract translation: 目的：即使焊接正在进行中，也可以通过使用相对简单的装置进行标题检测，通过提供辐射通道，使外部对待焊接物体的最深部分附近的部分无阻碍地观察，并检测产生的放射线 从焊接区通过辐射通道。 构成：当将电子束6照射到待焊接物体1时，由照射部分产生X射线，或者从熔融部分产生光。 因此，当穿过焊接区域时，通过穿透焊接区域来提供从外部向焊接区域1中的最深部15附近的部分靠近最深部15的部分的放射线通道16，因此X射线等的光或放射线从外部泄漏 通过用检测元件18检测放射线17，可以获得指示穿透深度比通道16的位置更深的确认信号19。

公开(公告)号：JPS58154472A

公开(公告)日：1983-09-13

申请号：JP3891082

申请日：1982-03-09

Applicant: MITSUBISHI ELECTRIC CORP

Inventor： MURAKAMI EISHIN ,  YASUNAGA MASASHI

IPC: B23K15/00

Abstract: PURPOSE:To improve the accuracy of positions, by outputting the error signal for the weld line of the N-th cycle and processing the signal of the (N+1)th cycle after a computer for signal processing detects the weld line of the (N+1)th cycle. CONSTITUTION:Upon ending of the (N-1)th welding D E, in order to detect the weld line near M necessary for the (N+1)th welding L M, the irradiation point of an electron beam moves to F. F G is the detection period for the (N+1)th weld line, and upon ending of the detection of the weld line, the irradiation point of the electron beam moves to H (the same point as E). The N-th welding H I wherein the errors of the weld line are corrected by the operated result of the N-th weld line calculated during the (N-1)th welding D E is accomplished. Since the conditions for the N-th welding H I are outputted at the irradiation point H, the results of the (N+1)th weld line detected previously are operated during the N-th welding H I.