公开(公告)号：JP2006279072A

公开(公告)日：2006-10-12

申请号：JP2006175465

申请日：2006-06-26

申请人： Fab Solution Kk ,  ファブソリューション株式会社

发明人： YAMADA KEIZO ,  ITAGAKI YOSUKE ,  USHIKI TAKEO ,  TSUJIIDE TORU

IPC分类号： H01L21/02 ,  G05B19/418 ,  H01L21/00

CPC分类号： H01L21/67276

摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device manufacture management system which allows not only the processing quality for each process but the number of finally obtained normal articles of semiconductor devices which users order to be estimated for each process. SOLUTION: This semiconductor device manufacture management system comprises manufacturing devices 11a-11c which are located at a semiconductor manufacture center C and manufacture chips, in-line measuring instruments 12a-12c for outputting measured data by lots, a database 2 for storing producing method data by the lots, the measured data, step specifications corresponding to the measurement data, estimated yield, lot feed date and time, step scheduled date, actual completion date by the steps, and completion scheduled date data of the chips step by step, making them correspond to the lot numbers of the chips, and a server 1 having an estimated yield arithmetic section 1a for calculating the estimated yield based on the specifications and measurement data, and a manufacture management section 1b for performing the manufacture management of the chips using respective data which users input and the estimated yield. COPYRIGHT: (C)2007,JPO&INPIT

摘要翻译： 要解决的问题：提供一种半导体器件制造管理系统，其不仅允许每个处理的处理质量，而且允许用户订购的每个处理的最终获得的正常的半导体器件的数量被估计。 解决方案：该半导体器件制造管理系统包括位于半导体制造中心C并制造芯片的制造设备11a-11c，用于批量输出测量数据的在线测量仪器12a-12c，用于存储的测量数据 通过批次生成方法数据，测量数据，对应于测量数据的步骤规格，估计产量，批量进给日期和时间，步骤计划日期，步骤的实际完成日期，以及逐步完成芯片的完成预定日期数据 ，使其对应于芯片的批号，以及具有基于规格和测量数据计算估计产量的估计产量算术部分1a的服务器1和用于执行芯片的制造管理的制造管理部1b 使用用户输入的各个数据和估计的收益。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2006184124A

公开(公告)日：2006-07-13

申请号：JP2004377817

申请日：2004-12-27

申请人： Fab Solution Kk ,  ファブソリューション株式会社

发明人： YAMADA KEIZO

IPC分类号： G01R31/302 ,  G01R1/06 ,  G01R19/00 ,  H01L21/66

CPC分类号： G01R19/0023 ,  G01R31/307

摘要： PROBLEM TO BE SOLVED: To provide an apparatus and a method for measuring current, capable of measuring minute current which flows in a measurement sample such as a semiconductor substrate or the like under a probe irradiation such as an electron beam or the like, over a wide frequency band with low noises.
SOLUTION: The current measuring apparatus which has a means for measuring the current flowing in the measurement sample 4 when the measurement sample 4 is irradiated with a probe such as the electron beam 12 or the like, is equipped with a switched capacitor current amplifier circuit 8 as an amplifier circuit for amplifying the current flowing in the measurement sample 4.
COPYRIGHT: (C)2006,JPO&NCIPI

摘要翻译： 解决的问题：提供一种测量电流的装置和方法，其能够测量在诸如电子束等的探针照射下在诸如半导体衬底等的测量样品中流动的微小电流 ，在低噪声的宽频带上。 解决方案：当测量样品4被诸如电子束12等的探针照射时，具有用于测量在测量样品4中流动的电流的装置的电流测量装置配备有开关电容器电流 放大器电路8作为用于放大流过测量样品4的电流的放大器电路。版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2005207926A

公开(公告)日：2005-08-04

申请号：JP2004015773

申请日：2004-01-23

申请人： Fab Solution Kk ,  ファブソリューション株式会社

发明人： SUZUKI KOICHI ,  SATO MITSUO

IPC分类号： G01R27/02 ,  G01N27/04

摘要： PROBLEM TO BE SOLVED: To provide a method and an instrument for measuring a resistance capable of measuring properly an effective resistance value of a conductive member in discharge of an electric charge charged in a protection object protected from static electricity.
SOLUTION: A prescribed capacity of capacitor 204 is connected between an electrode 100 and a prescribed node (grounding). The electrode 100 is fixed onto an instrument body. The instrument main body is provided with a surface electrometer 201, an arithmetic processing part 202, a display part 203, the capacitor 204, a voltage source 205, and a switch 206. The switch 206 is closed and the capacitor 204 is charged preliminarily by the voltage source 205, when measuring the resistance of the measured object. Then, the switch 206 is opened, and the electrode 100 is brought into contact with the measuring object to discharge the capacitor 204. A voltage of the electrode 100 is measured therein by the surface electrometer 201. A time constant of the measured object is acquired based on a voltage measured result therein, and the time constant is converted into the resistance value of the measured object to be output.
COPYRIGHT: (C)2005,JPO&NCIPI

摘要翻译： 要解决的问题：提供一种用于测量在能够适当地测量导电部件的有效电阻值的电阻的测量方法和仪器，该电阻在放电保护静电的保护对象中的电荷放电时。 解决方案：电容器204的规定容量连接在电极100和规定节点（接地）之间。 电极100固定在仪器主体上。 仪器主体设置有表面静电计201，运算处理部202，显示部203，电容器204，电压源205和开关206.开关206闭合，电容器204初步由 电压源205，当测量被测物体的电阻时。 然后，打开开关206，使电极100与测量对象接触，以对电容器204进行放电。通过表面静电计201测量电极100的电压。获取测量对象的时间常数 基于其中的电压测量结果，并且将时间常数转换成被输出的被测量物体的电阻值。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2005064128A

公开(公告)日：2005-03-10

申请号：JP2003290358

申请日：2003-08-08

申请人： Fab Solution Kk ,  ファブソリューション株式会社

发明人： USHIKI TAKEO ,  YAMADA KEIZO ,  ITAGAKI YOSUKE

IPC分类号： H01L21/66 ,  H01J37/28

摘要： PROBLEM TO BE SOLVED: To provide an inline film quality evaluation method and device and method for evaluating a semiconductor device by which the electric film quality of an insulating film forming the semiconductor device can be accurately evaluated.
SOLUTION: The semiconductor evaluation device is provided with an electron beam generating means (101 or the like), an electron beam converging means (103 or the like), an electron beam irradiation position control means (112 or the like) for controlling the irradiation position of a converged electron beam, current measuring means (113, 116, etc.) for measuring the substrate current of the semiconductor device, a synchronizing signal generating means (115) for synchronizing a timing between the generation of an electron beam and the measurement of current, an irradiation changing means for changing the amount of irradiation of electron beam, a measurement result recording means (121) for recording the measurement result obtained by the current measuring means as a time function, an evaluation processing part (120) for evaluating film quality on the basis of a relationship between current and time indicated by the measurement result, and an indicating means (122) for indicating an evaluation result.
COPYRIGHT: (C)2005,JPO&NCIPI

摘要翻译： 要解决的问题：提供一种用于评估半导体器件的在线膜质量评估方法和装置和方法，通过该半导体器件可以精确地评估形成半导体器件的绝缘膜的电薄膜质量。 解决方案：半导体评估装置设置有电子束产生装置（101等），电子束会聚装置（103等），电子束照射位置控制装置（112等），用于 控制会聚电子束的照射位置，用于测量半导体器件的衬底电流的电流测量装置（113,116等），同步信号发生装置（115），用于使电子束产生之间的定时同步 和电流测量，用于改变电子束照射量的照射改变装置，用于记录由当前测量装置获得的测量结果作为时间功能的测量结果记录装置（121），评估处理部分（120 ），用于基于由测量结果指示的当前和时间之间的关系来评估胶片质量;以及指示装置（122），用于指示e 估值结果。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2004325238A

公开(公告)日：2004-11-18

申请号：JP2003120042

申请日：2003-04-24

申请人： Fab Solution Kk ,  ファブソリューション株式会社

发明人： SUZUKI KOICHI ,  SATO MITSUO

IPC分类号： G01R31/26 ,  G01R29/12 ,  G01R29/24

摘要： PROBLEM TO BE SOLVED: To provide a charge quantity measuring device which measures the charge quantity appearing by being induced by an electric field without preparing a sample.
SOLUTION: A metal plate 70 having a prescribed capacity is mounted through an insulator 60 on a casing 10 composing a device body. A surface electrometer 20, an operation part 30 or the like are stored in the casing 10, and the surface electrometer 20 is arranged so as to face to the metal plate 70. When the metal plate 70 is exposed to an external electric field, the charge is induced on the metal plate 70 by the electric field, and the electric potential of the metal plate 70 is stabilized at the electric potential corresponding to the charge quantity. The electric potential is measured by the surface electrometer 20, and the charge quantity is operated from the measured value by the operation part 30. A shielding part 80 is mounted slidably on the casing 10, and the external electric field exerting an influence on the electric potential of the metal plate 70 is shielded when initializing the electric potential of the metal plate 70.
COPYRIGHT: (C)2005,JPO&NCIPI

公开(公告)号：JP2006023119A

公开(公告)日：2006-01-26

申请号：JP2004199447

申请日：2004-07-06

申请人： Fab Solution Kk ,  ファブソリューション株式会社

发明人： SUZUKI KOICHI ,  TSUJIIDE TORU

IPC分类号： G01N27/04

摘要： PROBLEM TO BE SOLVED: To provide a method and a device for evaluating an electrostatic discharge damage preventing material capable of judging accurately the propriety as a constitutive material for an object capable of evading effectively an electronic equipment from electrostatic discharge damage.
SOLUTION: This method/device has a voltage-to-current characteristic measuring processing step (step S10) for impressing a plurality of voltage values to the evaluated material to measure a current flowing in the evaluated material in every of the plurality of voltage values, as to the evaluated material that is the constitutive material for the object used for evading the damage, of a semiconductor device or the electronic equipment, caused by static electricity, a processing step (step S20) for determining the presence or absence of a portion indicating nonlinearity in a measured result of the step S10, and a processing step (step S30) for measuring a charged quantity of the evaluated material.
COPYRIGHT: (C)2006,JPO&NCIPI

摘要翻译： 要解决的问题：提供一种用于评估能够准确地判断作为能够有效地逃避电子设备免受静电放电损坏的物体的构成材料的适当性的静电放电损伤防止材料的评估方法和装置。 解决方案：该方法/装置具有电压 - 电流特性测量处理步骤（步骤S10），用于将多个电压值施加到所评估的材料，以测量在所述评估材料中的每一个中流动的电流 电压值，作为用于避免由静电引起的损坏的半导体器件或电子设备的用于避免损坏的物体的构成材料的评估材料，用于确定是否存在或不存在的处理步骤（步骤S20） 在步骤S10的测量结果中表示非线性的部分，以及用于测量评估材料的带电量的处理步骤（步骤S30）。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2004259851A

公开(公告)日：2004-09-16

申请号：JP2003047351

申请日：2003-02-25

申请人： Fab Solution Kk ,  ファブソリューション株式会社

发明人： TSUJIIDE TORU

IPC分类号： H01L21/027

摘要： PROBLEM TO BE SOLVED: To provide an evaluation method of a semiconductor device, which can measure quickly and statistically the dimensions of each part formed in a semiconductor wafer.
SOLUTION: Parallel electron beams ESW passing the aperture of an electron gun arranged in a measurement device are made to radiate in the shape of shower on the surface of a semiconductor wafer, and substrate current Ik is generated with this radiation. In the radiation region of the parallel electron beams ESW, a plurality of resist patterns REG1(1)-REG(4) which correspond to a plurality of gate electrodes in which variation of dimensions may be generated are contained, the variation of each dimension of the plurality of resist patterns is reflected on the substrate current Ik. As a result, dimension of each part of the resist patterns REG can be evaluated statistically by measuring the substrate current Ik.
COPYRIGHT: (C)2004,JPO&NCIPI

摘要翻译： 解决的问题：提供半导体器件的评估方法，其可以快速且统计地测量形成在半导体晶片中的每个部件的尺寸。 解决方案：通过布置在测量装置中的电子枪的孔径的平行电子束ESW被制成在半导体晶片的表面上以淋浴的形式辐射，并且用该辐射产生衬底电流Ik。 在并联电子束ESW的辐射区域中，包含与可能产生尺寸变化的多个栅电极对应的多个抗蚀剂图案REG1（1）-REG（4），每个尺寸的变化 多个抗蚀剂图案在衬底电流Ik上被反射。 结果，可以通过测量衬底电流Ik统计地评估抗蚀剂图案REG的每个部分的尺寸。 版权所有（C）2004，JPO＆NCIPI

公开(公告)号：JP2006119133A

公开(公告)日：2006-05-11

申请号：JP2005300312

申请日：2005-10-14

申请人： Fab Solution Kk ,  ファブソリューション株式会社

发明人： YAMADA KEIZO ,  ITAGAKI YOSUKE ,  USHIKI TAKEO ,  TSUJIIDE TORU

IPC分类号： G01B15/00 ,  G01N23/225 ,  H01J37/20 ,  H01J37/28 ,  H01L21/66

摘要： PROBLEM TO BE SOLVED: To further improve technology for detecting substrate current generated by irradiation of an electron beam to nondestructively inspect an internal state of a semiconductor device or a detailed shape of a contact hole. SOLUTION: The sample 5 is irradiated with parallel electron beam 2, and the current flowing through a sample 5 is measured by an ammeter 9. Acceleration voltage of electron beam 2 is changed, and the measurement is repeated. Information related to a depth-direction structure of the sample 5 is found from difference of a current value based on difference of a transmittance of the electron beam 2 to the sample 5 by difference of the acceleration voltage, in a data processor 10. COPYRIGHT: (C)2006,JPO&NCIPI

摘要翻译： 要解决的问题：为了进一步改进用于检测由电子束的照射产生的衬底电流的技术，以非破坏性地检查半导体器件的内部状态或接触孔的详细形状。 解决方案：用平行电子束2照射样品5，通过电流表9测量流过样品5的电流。改变电子束2的加速电压，并重复测量。 在数据处理器10中，根据加速电压的差异，根据电子束2与样品5的透射率的差异，求出与样品5的深度方向结构有关的信息。

版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2006112809A

公开(公告)日：2006-04-27

申请号：JP2004297577

申请日：2004-10-12

申请人： Fab Solution Kk ,  ファブソリューション株式会社

发明人： SUZUKI KOICHI ,  TAKEZAWA NAGAKUNI ,  SATO MITSUO

IPC分类号： G01R29/24

摘要： PROBLEM TO BE SOLVED: To provide a monitoring device of human body potential and a human body potential monitoring method, capable of discharging the charge accumulated on a human body, measuring the surface potential of the human body, and issuing a warning, when a ground line for discharging the charge of the human body is cut or a connection failure thereof occurs.
SOLUTION: This monitoring device of human body potential has a ground plate 11, arranged on a wrist strap 10 for discharging the charge accumulated on the human body through the ground line; a monitor plate 12 arranged on the wrist strap 10; a human body potential measuring circuit part 20 for measuring the human body potential with an electrostatic field sensor connected to the monitor plate 12; and an alarm generating circuit 31 for comparing an output signal from the human body potential measuring circuit part 20 with a prescribed reference value, detecting the loss in the conduction path to the ground line of the ground plate 11, and issuing an alarm.
COPYRIGHT: (C)2006,JPO&NCIPI

摘要翻译： 要解决的问题：为了提供人体潜能监测装置和人体潜能监测方法，能够排出积累在人体上的电荷，测量人体的表面电位并发出警告， 当用于排出人体的电荷的接地线被切断或其连接失败时。 解决方案：该人体电位监视装置具有接地板11，布置在腕带10上，用于通过接地线排出累积在人体上的电荷; 布置在腕带10上的监视器板12; 用于通过连接到监视器板12的静电场传感器测量人体电位的人体电位测量电路部分20; 以及用于将来自人体电位测量电路部分20的输出信号与规定参考值进行比较的报警发生电路31，检测到接地板11的接地线的导通路径的损耗，并发出报警。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2006019562A

公开(公告)日：2006-01-19

申请号：JP2004196662

申请日：2004-07-02

申请人： Fab Solution Kk ,  ファブソリューション株式会社

发明人： YAMADA KEIZO

IPC分类号： H01L21/66 ,  H01L21/02 ,  H01L21/027

摘要： PROBLEM TO BE SOLVED: To provide a device evaluation element realizing process evaluation in the way of fabrication process in a short time even in case of a micro semiconductor device.
SOLUTION: The device evaluation element is provided with an alignment mark for performing alignment by means of an electron beam or light, and a semiconductor device evaluation element having an electron beam receiving region is arranged at a position separated by a predetermined distance from the alignment mark.
COPYRIGHT: (C)2006,JPO&NCIPI

摘要翻译： 要解决的问题：即使在微型半导体器件的情况下，也可以在短时间内提供以制造工艺的方式实现工艺评估的器件评估元件。 解决方案：设备评估元件设置有用于通过电子束或光进行对准的对准标记，并且具有电子束接收区域的半导体器件评估元件被布置在与 对齐标记。 版权所有（C）2006，JPO＆NCIPI