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公开(公告)号：JP5052954B2
公开(公告)日：2012-10-17
申请号：JP2007124119
申请日：2007-05-09
Applicant: 株式会社アルバック
Abstract: PROBLEM TO BE SOLVED: To provide a method for growing CNT (carbon nanotube) in a bundle shape with a high density. SOLUTION: In a method for growing CNT wherein a substrate having a layer of a catalyst metal oxide is used as a catalyst layer for growing CNT and CNT is grown on the substrate by supplying a process gas for growing CNT to the substrate, the catalyst metal oxide is reduced by the process gas and CNT is grown on the catalyst metal during the CNT growth process. COPYRIGHT: (C)2009,JPO&INPIT
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3.发明专利
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4.发明专利
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Patent Agency Ranking
公开(公告)号：JP5276768B2
公开(公告)日：2013-08-28
申请号：JP2005209637
申请日：2005-07-20
Applicant: 株式会社アルバック
CPC classification number: Y02W30/828
Abstract: PROBLEM TO BE SOLVED: To solve problems of conventional cathode substrate short-circuit removing method in which the heat generated when removing short-circuited part is transmitted to peripheral part thereof and the cathode substrate is cracked by the temperature increase by itself and an emitter material constituting an electron emission part is damaged by the heat. SOLUTION: When a part between a cathode electrode 22 of the electron emission part 25 and a gate electrode layer is in a state of short-circuit, a voltage is impressed between the cathode electrode 22 of the cathode substrate 21 and the gate electrode 24, and the short-circuited part is removed by the heat generated by the current flowing through the short-circuited part, at that time, the current is a pulse current. COPYRIGHT: (C)2007,JPO&INPIT
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公开(公告)号：JP5089898B2
公开(公告)日：2012-12-05
申请号：JP2006076797
申请日：2006-03-20
Applicant: 株式会社アルバック
Abstract: PROBLEM TO BE SOLVED: To provide a method for activating the surface of a catalytic metal or an alloy for growing a CNT (carbon nonatube) and a method for growing the CNT efficiently even on a substrate on which the CNT is hardly grown. SOLUTION: A radical species is supplied to the surface of the substrate to activate the surface of a catalyst arranged on the substrate and then the CNT is grown. It is preferable that the radical species is obtained by decomposing at least one gas selected from a hydrogen atom-containing gas, a hydrocarbon gas and a carbon monoxide gas in plasma. Irradiation of the radical species is preferably carried out at 200-600°C. COPYRIGHT: (C)2008,JPO&INPIT
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公开(公告)号：JP5032042B2
公开(公告)日：2012-09-26
申请号：JP2006074246
申请日：2006-03-17
Applicant: 株式会社アルバック
IPC: C23C16/452 , C01B31/02 , C23C16/26 , C23C16/511 , H01L21/205 , H01L21/285
Abstract: PROBLEM TO BE SOLVED: To provide a plasma CVD apparatus capable of performing the uniform film deposition in a more extensive range than the plasma size. SOLUTION: The plasma CVD apparatus comprises a chamber 10 with a substrate 5 arranged therein, a tubular member 20 having an opening part 18 opened in the chamber 10 so as to be opposite to the substrate 5, a plasma generator 24 for generating plasma into the tubular member 20, and a raw material gas feeder 22 for feeding a raw material gas to the tubular member 20. The inside diameter d of the opening part 18 of the tubular member 20 is smaller than the outside diameter D of the substrate 5. COPYRIGHT: (C)2007,JPO&INPIT
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公开(公告)号：JP4987379B2
公开(公告)日：2012-07-25
申请号：JP2006213522
申请日：2006-08-04
Applicant: 株式会社アルバック
Abstract: PROBLEM TO BE SOLVED: To provide techniques for forming carbon nanotubes at a low temperature. SOLUTION: A first vacuum chamber 10 and a second vacuum chamber 20 are connected via ducts 11, 21; the first and second vacuum chambers 10, 20 and the ducts 11, 21 are evacuated; and a catalyst thin film formed on the surface of a substrate in the first vacuum chamber 10 is carried through the ducts 11, 21 in the second vacuum chamber 20, where carbon nanotubes are grown on the surface of the catalyst thin film. Since the catalyst thin film is not exposed to air, the film is free from deactivation and allows carbon nanotubes to grow even at a low temperature. COPYRIGHT: (C)2008,JPO&INPIT
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公开(公告)号：JP4814986B2
公开(公告)日：2011-11-16
申请号：JP2009223352
申请日：2009-09-28
Applicant: 株式会社アルバック
IPC: C01B31/02 , B01J23/755
CPC classification number: C23C16/511 , B01J23/74 , B01J37/349 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B2202/36 , Y10T428/12063 , Y10T428/31678
Abstract: A substrate for the growth of a carbon nanotube having a catalyst layer microparticulated by using an arc plasma gun. CNT is grown on the catalyst layer by thermal CVD or remote plasma CVD. The particle diameter of the catalyst for the growth of CNT is regulated by the number of shots of the are plasma gun. CNT is grown on the catalyst layer having a regulated catalyst particle diameter by thermal CVD or remote plasma CVD to regulate the inner diameter or outer diameter of CNT.
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