公开(公告)号：JP3619132B2

公开(公告)日：2005-02-09

申请号：JP2000260877

申请日：2000-08-25

Applicant: 株式会社日立サイエンスシステムズ ,  株式会社日立製作所

Inventor： 修 小室 ,  謙一 西潟 ,  勝明 阿部

IPC: G01N23/225 ,  G01N23/04 ,  G21K7/00 ,  H01J37/22 ,  H01J37/28 ,  H01L21/66

CPC classification number: G01N23/04 ,  G06T1/0007 ,  G06T2207/30148 ,  H01J37/265 ,  H01J2237/24585 ,  H01J2237/2487 ,  H01J2237/2817

Abstract: In order to provide an electron microscope which enables the operator to position the field-of-view easily and accurately on a target fault, the electron microscope for observing a surface or inside of a semiconductor wafer or a mask for exposing a semiconductor pattern for faults and/or foreign objects, is provided comprising a function of loading measurement data of coordinates or sizes of faults or objects which were observed by another wafer or mask inspecting apparatus, moving the field of view of the electron microscope to the area where said fault or object exists, and displaying the coordinates of faults or objects which were obtained by another wafer or mask inspecting apparatus, the field-of-view of the electron microscope and its vicinity, a function of a pointing device switch which moves the field-of-view of the electron microscope to a position which is pointed to by a pointer on said display, and a function of changing the display as said field-of-view moves.

公开(公告)号：JP4218171B2

公开(公告)日：2009-02-04

申请号：JP2000058022

申请日：2000-02-29

Applicant: 株式会社日立製作所

Inventor： 達也 前田 ,  修 小室 ,  康彦 小沢 ,  聡 山口 ,  純太郎 有馬 ,  秀俊 諸熊 ,  孝 飯泉

IPC: H01J37/22 ,  H01L21/66 ,  G01N23/04 ,  G01Q10/00 ,  G01Q20/00 ,  G01Q30/02 ,  G01Q30/04 ,  G21K7/00 ,  H01J37/28

CPC classification number: H01J37/28 ,  G01N23/04 ,  G01N23/225 ,  G06T7/74 ,  G06T2207/10056 ,  G06T2207/30148 ,  H01J37/222 ,  H01J2237/2817

公开(公告)号：JP5497368B2

公开(公告)日：2014-05-21

申请号：JP2009187259

申请日：2009-08-12

Applicant: 株式会社日立製作所

Inventor： 二大 笹嶋 ,  修 小室 ,  文夫 水野

IPC: H01L21/66 ,  G01N23/225

Abstract: PROBLEM TO BE SOLVED: To provide a method for performing evaluation and abnormality detection of a fine pattern formed on a semiconductor wafer and an aligner which exposes the pattern. SOLUTION: In a method and equipment for evaluating a pattern, which evaluate a hole pattern, on the basis of electrons detected by electron beam scanning to the hole pattern formed on a substrate, a ratio of the major axis to the minor axis of the hole pattern is obtained on the basis of the detected electrons. Features, ellipticity or the area of the circular shape of the hole pattern is obtained, on the basis of the detected electrons, and information on the characteristics, the ellipticity or the area of the circular shape is displayed for every chip on the substrate or by each shot of a projection aligner. COPYRIGHT: (C)2010,JPO&INPIT

公开(公告)号：JP4834478B2

公开(公告)日：2011-12-14

申请号：JP2006189759

申请日：2006-07-10

Applicant: 株式会社日立製作所

Inventor： 修 小室 ,  文夫 水野 ,  二大 笹嶋

IPC: H01L21/66 ,  G01B15/04 ,  H01L21/027

公开(公告)号：JP4343929B2

公开(公告)日：2009-10-14

申请号：JP2006189753

申请日：2006-07-10

Applicant: 株式会社日立製作所

Inventor： 修 小室 ,  文夫 水野 ,  二大 笹嶋

IPC: H01L21/027 ,  G01B11/24 ,  G01B15/04 ,  H01L21/66

公开(公告)号：JP4158384B2

公开(公告)日：2008-10-01

申请号：JP2002036131

申请日：2002-02-14

Applicant: 株式会社日立製作所

Inventor： 康裕 吉武 ,  千絵 宍戸 ,  修 小室 ,  俊一 松本 ,  正浩 渡辺 ,  麻紀 田中 ,  秀俊 諸熊 ,  孝 飯泉 ,  裕治 高木

IPC: G03F7/20 ,  H01L21/02 ,  H01L21/027 ,  H01L21/66

公开(公告)号：JP4274649B2

公开(公告)日：2009-06-10

申请号：JP28705799

申请日：1999-10-07

Applicant: 株式会社日立製作所

Inventor： 修 小室 ,  文夫 水野 ,  二大 笹嶋

IPC: H01L21/027 ,  H01L21/66 ,  B32B3/00 ,  G01B11/00 ,  G01N23/225 ,  G01Q30/02 ,  G01Q30/04 ,  G03F7/20

CPC classification number: G03F7/70608 ,  G01N23/225 ,  G06T7/0004 ,  H01J37/265 ,  H01J37/28 ,  H01J2237/221 ,  H01J2237/24592 ,  H01J2237/2487

Abstract: The edges of the reticle are detected with respect to the microstructured patterns exposed by the stepper, and the shapes of the microstructured patterns at the surface and at the bottom of the photoresist are detected. The microstructured patterns are evaluated by calculating, and displaying on the screen, the dislocation vector that represents the relationship in position between the detected patterns on the surface and at the bottom of the photoresist. Furthermore, dislocation vectors between the microstructured patterns at multiple positions in a single-chip or single-shot area or on one wafer are likewise calculated, then the sizes and distribution status of the dislocation vectors at each such position are categorized as characteristic quantities, and the corresponding tendencies are analyzed. Thus, stepper or wafer abnormality is detected.

公开(公告)号：JP4215454B2

公开(公告)日：2009-01-28

申请号：JP2002166447

申请日：2002-06-07

Applicant: 株式会社日立製作所

Inventor： 修 小室 ,  康彦 小沢 ,  聡 山口 ,  秀男 戸所 ,  淳 高根

IPC: G01B15/04 ,  G01B15/08 ,  H01J37/28 ,  H01L21/66

CPC classification number: H01J37/28 ,  H01J2237/2815

公开(公告)号：JP3870044B2

公开(公告)日：2007-01-17

申请号：JP2001224017

申请日：2001-07-25

Applicant: 株式会社日立製作所

Inventor： 正 大高 ,  恒男 寺澤 ,  修 小室 ,  敦子 山口 ,  孝 飯泉

IPC: G01B15/00 ,  H01L21/66 ,  G01N21/956 ,  G01N23/225 ,  G03F7/20 ,  G06T7/00

CPC classification number: G01N23/2251 ,  G01N21/95684 ,  G03F7/70616 ,  G06T7/0004 ,  G06T2207/30148 ,  H01J2237/2817

公开(公告)号：JP4301261B2

公开(公告)日：2009-07-22

申请号：JP2006188798

申请日：2006-07-10

Applicant: 株式会社日立製作所

Inventor： 達也 前田 ,  修 小室 ,  康彦 小沢 ,  聡 山口 ,  純太郎 有馬 ,  秀俊 諸熊 ,  孝 飯泉

IPC: H01J37/22 ,  G01N23/225

Abstract: PROBLEM TO BE SOLVED: To make a scanning electron microscope operate with high precision at high speed by reducing a process for inspection alignment, inputting work or the like. SOLUTION: The scanning electron microscope having a function specifying a desired position based on a pattern registered beforehand, comprises a means for setting information about the type of the pattern, spaces between a plurality of parts forming the pattern and the size of parts forming the pattern, and a means for forming a pattern image formed of a plurality of the parts based on information acquired by the setting means. COPYRIGHT: (C)2007,JPO&INPIT