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    Processing equipment, and sample processing method
    3.
    发明专利
    Processing equipment, and sample processing method 有权

    公开(公告)号：JP5581007B2

    公开(公告)日：2014-08-27

    申请号：JP2009108647

    申请日：2009-04-28

    Applicant: 株式会社日立ハイテクノロジーズ

    Inventor： 麻美 許斐 ,  浩一 黒澤 ,  宏史 武藤

    IPC: H01J37/305 ,  G01N1/28 ,  H01J37/20

    Abstract: PROBLEM TO BE SOLVED: To achieve fabrication of a clean cross-section by suppressing damage such as specimen structural change suppressing a temperature rise of a specimen due to ion beam energy while maintaining a specimen temperature at an arbitrary temperature during ion beam processing. SOLUTION: In a processing device of scraping off the specimen protruding from a mask by an ion gun to generate ions, a specimen stand to mount the specimen, the mask arranged between the specimen and the ion gun, and an ion beam discharged from the ion gun, the mask contacts the upper face of the specimen, and a cooling mechanism is connected to the mask. This cooling mechanism may be a temperature adjusting mechanism. Moreover, similarly, the specimen base is equipped with the cooling mechanism. Furthermore, an oscillation generating mechanism is mounted on the specimen stand. COPYRIGHT: (C)2011,JPO&INPIT

    Inspection apparatus and inspection method
    5.
    发明专利
    Inspection apparatus and inspection method 有权

    公开(公告)号：JP5352135B2

    公开(公告)日：2013-11-27

    申请号：JP2008165212

    申请日：2008-06-25

    Applicant: 株式会社日立ハイテクノロジーズ

    Inventor： 毅志 砂押 ,  浩一 黒澤 ,  岳志 佐藤 ,  正明 古森

    IPC: G01R31/302 ,  H01L21/66

    CPC classification number: G01R31/2874 ,  G01R31/311

    Abstract: There are provided an inspection apparatus and method that can locally perform sample temperature regulation, so that the sample drift can be suppressed. There are included a sample stage 109 that holds a semiconductor sample 118, multiple probes 106 used to measure electrical characteristics of a semiconductor device on the semiconductor sample 118, a power source that applies voltage and/or current to the probe 106, a detector that measures electrical characteristics of the semiconductor device on the sample with which the probe is brought into contact, and an electromagnetic wave irradiating mechanism that irradiates electromagnetic wave on a measurement section of the semiconductor sample 118.

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