-
公开(公告)号：JP3944439B2
公开(公告)日：2007-07-11
申请号：JP2002280142
申请日：2002-09-26
Applicant: 株式会社日立ハイテクノロジーズ
CPC classification number: H01J37/28 , H01J37/265 , H01J2237/2817
Abstract: An inspection method and apparatus irradiates a sample on which a pattern is formed with an electron beam, so that an inspection image and a reference image can be generated on the basis of a secondary electron or a reflected electron emitted by the sample. An abnormal pattern is determined based on a difference in halftone values of each pixel between the inspection image and the reference image. A plurality of feature quantities of the abnormal pattern are obtained from an image of the abnormal pattern, and, based on the distribution of the plurality of feature quantities of the abnormal pattern, a range for classifying the type of the abnormal pattern is designated. Thus, a desired defect can be extracted from many defects extracted by inspection.
-
公开(公告)号：JP5286004B2
公开(公告)日：2013-09-11
申请号：JP2008234270
申请日：2008-09-12
Applicant: 株式会社日立ハイテクノロジーズ
IPC: H01J37/147 , H01J37/22 , H01L21/66
CPC classification number: H01J37/28 , H01J37/20 , H01J37/265 , H01J2237/20285 , H01J2237/2817
-
-
公开(公告)号：JP5227902B2
公开(公告)日：2013-07-03
申请号：JP2009142834
申请日：2009-06-16
Applicant: 株式会社日立ハイテクノロジーズ
CPC classification number: H01J37/28 , H01J2237/004 , H01J2237/24564 , H01J2237/24592
-
公开(公告)号：JP5124002B2
公开(公告)日：2013-01-23
申请号：JP2010210564
申请日：2010-09-21
Applicant: 株式会社日立ハイテクノロジーズ
CPC classification number: G06T7/001 , G06T2200/24 , G06T2207/10061 , G06T2207/30148 , H01J2237/2817
-
Patent Agency Ranking
公开(公告)号：JP4767270B2
公开(公告)日：2011-09-07
申请号：JP2008035106
申请日：2008-02-15
Applicant: 株式会社日立ハイテクノロジーズ
CPC classification number: H01J37/28 , H01J37/222 , H01J37/244 , H01J2237/221 , H01J2237/24495 , H01J2237/2485 , H01J2237/2817
-
-
公开(公告)号：JP4078280B2
公开(公告)日：2008-04-23
申请号：JP2003348951
申请日：2003-10-08
Applicant: 株式会社日立ハイテクノロジーズ
IPC: G01B15/04 , H01L21/66 , G01B15/08 , G01N21/956 , G01N23/225
CPC classification number: G01N23/2251 , G01N21/95607 , H01J2237/2817
Abstract: A circuit pattern inspection method and apparatus capable of readily setting an optimum threshold value while it is confirmed that a defect detected when a defect is checked can be detected at what threshold value and capable of forming a recipe easily. A circuit pattern inspection of irradiating an electron beam to a specimen formed with a circuit pattern on a surface thereof, forming an inspection image and a reference image in accordance with a secondary electron of a reflected electron from the specimen, and acquiring an abnormal portion from a difference between the inspection image and the reference image, wherein a plurality of characteristic quantities of the abnormal portion are obtained from an image of the abnormal portion, and the abnormal portion is selectively displayed by changing an inspection threshold value virtually set for the characteristic quantities.
-
公开(公告)号：JP5022781B2
公开(公告)日：2012-09-12
申请号：JP2007148920
申请日：2007-06-05
Applicant: 株式会社日立ハイテクノロジーズ
IPC: G01N23/225 , G01N21/956 , H01L21/66
Abstract: PROBLEM TO BE SOLVED: To adjust automatically a threshold of defect determination corresponding to characteristic fluctuation of a pattern image detection part 110 or individual dispersion of a surface characteristic of a wafer 6 to be inspected. SOLUTION: An image processing part 120 has a constitution including a defect signal extraction part 21 for extracting a defect signal based on a differential image between a detection image of some domain on the surface of the wafer 6 to be inspected and a detection image of another domain having the same pattern as the domain; a defect signal accumulation part 23 for accumulating a defect signal amount of each pixel, and calculating its frequency distribution and dispersion relative to all pixels in the differential image; an offset calculation part 24 for calculating an offset amount of the frequency distribution by comparing the calculated dispersion with a dispersion of a reference frequency distribution acquired from a reference wafer 6 to be inspected; and a defect determination part 25 for correcting a reference defect determination threshold set beforehand by the offset amount, and performing defect determination of the defect signal relative to a defect image based on the corrected defect determination threshold. COPYRIGHT: (C)2009,JPO&INPIT
-
公开(公告)号：JP4857240B2
公开(公告)日：2012-01-18
申请号：JP2007280180
申请日：2007-10-29
Applicant: 株式会社日立ハイテクノロジーズ
IPC: H01L21/66 , G01N23/225
Abstract: PROBLEM TO BE SOLVED: To inspect under proper condition, even if the intensities of secondary electrons or reflected electrons vary temporally. SOLUTION: An semiconductor wafer inspection device includes an irradiation optical systems 1 and 4 for irradiating an inspection target with an electron beam, a scanning part 7 for scanning an irradiation position of the irradiation optical system in an X direction and a Y direction; a charging control electrode 5 for controlling secondary electrons or reflected electrons, generated on the inspection target due to the irradiation with the electron beam, a sensor 13 for detecting the secondary electrons or the reflected electrons via the electrification control electrode; an A/D converter 14 for sequentially converting a signal detected by the sensor into a digital image signal; from the irradiation start time of the electron beam; an addition circuit 15 for creating a detection image, by adding the digital image signal from a first set time to a second set time for each pixel; and an image processing circuit 16 for determining defects, by comparing the detected image with a reference image of a circuit pattern formed on the object of inspection. COPYRIGHT: (C)2008,JPO&INPIT
-
-
-
-
-
-
-
-
-
Search Results
13
records
(took 0.024 seconds)
