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公开(公告)号：JP5227512B2
公开(公告)日：2013-07-03
申请号：JP2006350839
申请日：2006-12-27
Applicant: 株式会社日立ハイテクノロジーズ
IPC: H01J37/28 , G01N23/225 , H01J37/20 , H01J37/244 , H01L21/66
CPC classification number: H01J37/28 , H01J37/244 , H01J2237/0435 , H01J2237/2448 , H01J2237/24564 , H01J2237/24592
Abstract: A plurality of primary beams are formed from a single electron source, the surface charge of a sample is controlled by at least one primary beam, and at the same time, the inspection of the sample is conducted using a primary beam other than this. Also, for an exposure area of the primary beam for surface charge control and an exposure area of the primary beam for the inspection, the surface electric field strength is set individually. Also, the current of the primary beam for surface charge control and the interval between the primary beam for surface charge control and the primary beam for inspection are controlled.
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公开(公告)号：JP4317765B2
公开(公告)日：2009-08-19
申请号：JP2004015050
申请日：2004-01-23
Applicant: 株式会社日立ハイテクノロジーズ
IPC: G01N23/225
Abstract: PROBLEM TO BE SOLVED: To prevent the deterioration of inspection performance, when using an electron beam, caused by a difference in contrast between inspection images owing to a difference in kind or density of an intra-chip circuit pattern in a specimen, as to an inspection device for detecting a defect by using an electron beam. SOLUTION: According to this inspection method or device using a charged particle beam, at least two images obtained by scanning the specimen by means of the charged particle beam are compared with each other to extract a defect in the circuit pattern in the specimen. The specimen is continuously moved while a predetermined width is scanned by means of the particle beam. Inspection conditions are changed to obtain images in areas where circuit patterns are different in kind or density. COPYRIGHT: (C)2005,JPO&NCIPI
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公开(公告)号：JP5135116B2
公开(公告)日：2013-01-30
申请号：JP2008204973
申请日：2008-08-08
Applicant: 株式会社日立ハイテクノロジーズ
IPC: G01N23/225 , G03F1/84 , G03F1/86 , H01L21/027 , H01L21/66
Abstract: PROBLEM TO BE SOLVED: To prevent the deterioration of inspection performance which is caused by the difference in the contrast of inspection images created by a difference in the type or density of circuit patterns in the chip inside a sample, when using the electron beam in inspection devices for detecting defects by the use of an electron beam. SOLUTION: The inspection method or device using a charged particle beam derives defects in the circuit pattern in the sample, by comparing at least two images obtained through scanning of the charged particle beam on the sample. The sample is moved continuously, while a predetermined width is scanned by the charged particle beam, and inspection conditions are changed to obtain the images, in areas with different types or densities of the circuit patterns. COPYRIGHT: (C)2009,JPO&INPIT
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公开(公告)号：JP3944439B2
公开(公告)日：2007-07-11
申请号：JP2002280142
申请日：2002-09-26
Applicant: 株式会社日立ハイテクノロジーズ
CPC classification number: H01J37/28 , H01J37/265 , H01J2237/2817
Abstract: An inspection method and apparatus irradiates a sample on which a pattern is formed with an electron beam, so that an inspection image and a reference image can be generated on the basis of a secondary electron or a reflected electron emitted by the sample. An abnormal pattern is determined based on a difference in halftone values of each pixel between the inspection image and the reference image. A plurality of feature quantities of the abnormal pattern are obtained from an image of the abnormal pattern, and, based on the distribution of the plurality of feature quantities of the abnormal pattern, a range for classifying the type of the abnormal pattern is designated. Thus, a desired defect can be extracted from many defects extracted by inspection.
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公开(公告)号：JP4078280B2
公开(公告)日：2008-04-23
申请号：JP2003348951
申请日：2003-10-08
Applicant: 株式会社日立ハイテクノロジーズ
IPC: G01B15/04 , H01L21/66 , G01B15/08 , G01N21/956 , G01N23/225
CPC classification number: G01N23/2251 , G01N21/95607 , H01J2237/2817
Abstract: A circuit pattern inspection method and apparatus capable of readily setting an optimum threshold value while it is confirmed that a defect detected when a defect is checked can be detected at what threshold value and capable of forming a recipe easily. A circuit pattern inspection of irradiating an electron beam to a specimen formed with a circuit pattern on a surface thereof, forming an inspection image and a reference image in accordance with a secondary electron of a reflected electron from the specimen, and acquiring an abnormal portion from a difference between the inspection image and the reference image, wherein a plurality of characteristic quantities of the abnormal portion are obtained from an image of the abnormal portion, and the abnormal portion is selectively displayed by changing an inspection threshold value virtually set for the characteristic quantities.
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Patent Agency Ranking
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公开(公告)号：JP5135115B2
公开(公告)日：2013-01-30
申请号：JP2008204972
申请日：2008-08-08
Applicant: 株式会社日立ハイテクノロジーズ
IPC: G01N23/225 , G01B15/04 , G03F1/86 , H01J37/22 , H01L21/027 , H01L21/66
Abstract: PROBLEM TO BE SOLVED: To provide an inspection device to detect defects by using an electron beam which, in case the electron beam is used, can prevent a deterioration of an inspection performance due to differences of contrasts of inspection images caused by differences of kinds and densities of circuit patterns in a chip in a testpiece. SOLUTION: In the inspection method or device using a charged particle beam in which a defect of a circuit pattern of a testpiece is abstracted by comparing at least two images which can be obtained by scanning a charged particle beam on the testpiece, the testpiece is moved continuously with a predetermined width while the charged particle beam is scanned, and in an area where kinds and densities of the circuit patterns are different, an image is obtained by changing an inspection condition. COPYRIGHT: (C)2009,JPO&INPIT
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公开(公告)号：JP5107812B2
公开(公告)日：2012-12-26
申请号：JP2008177947
申请日：2008-07-08
Applicant: 株式会社日立ハイテクノロジーズ
IPC: H01J37/147 , H01L21/66
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公开(公告)号：JP5103033B2
公开(公告)日：2012-12-19
申请号：JP2007052166
申请日：2007-03-02
Applicant: 株式会社日立ハイテクノロジーズ
IPC: G01N23/225 , H01J37/28 , H01L21/66
CPC classification number: G01N23/225 , H01J37/265 , H01J37/28
Abstract: A charged particle beam apparatus that can achieve both high defect-detection sensitivity and high inspection speed for a sample with various properties in a multi-beam type semiconductor inspection apparatus. The allocation of the primary beam on the sample is made changeable, and furthermore, the beam allocation for performing the inspection at the optimum inspection specifications and at high speed is selected based on the property of the sample. In addition, many optical parameters and apparatus parameters are optimized. Furthermore, the properties of the selected primary beam are measured and adjusted.
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公开(公告)号：JP3823073B2
公开(公告)日：2006-09-20
申请号：JP2002180735
申请日：2002-06-21
Applicant: 株式会社日立ハイテクノロジーズ
IPC: G01R31/302 , H01L21/66 , H01J37/22 , H01J37/28
CPC classification number: G01R31/305 , H01J37/222 , H01J37/244 , H01J37/268 , H01J37/28 , H01J2237/24564 , H01J2237/24592 , H01J2237/2594 , H01J2237/2817
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