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    Defect inspection method and apparatus
    4.
    发明专利
    Defect inspection method and apparatus 有权

    公开(公告)号：JP5255953B2

    公开(公告)日：2013-08-07

    申请号：JP2008219732

    申请日：2008-08-28

    Applicant: 株式会社日立ハイテクノロジーズ

    Inventor： 直樹 細谷 ,  敏文 本田 ,  高志 広井

    IPC: G01N23/225 ,  G01N21/956

    CPC classification number: G01N21/956 ,  G01N2223/6116 ,  G06T7/0004 ,  G06T7/001 ,  G06T2207/10061 ,  G06T2207/30148

    Abstract: Provided are a method and a device for defect inspection, wherein, in a state where a few DOIs exist in a large number of nuisances, a classification performance can be improved by a few appropriate defect instructions and a high classification performance is ensured while mitigating the burden of user's defect instructions. The method and device for defect inspection is characterized by repeating extraction of one or more defects from a plurality of defects detected by imaging a sample, instruction of a classification class of the extracted defects, and calculation of a classification criterion and a classification performance from the image information and classification class of the defects, and determining, based on the finally obtained classification criterion, the classification class of the unknown defects. This makes it possible to improve a classification performance by a few appropriate defect instructions and ensure a high classification performance while mitigating the burden of user's defect instructions.

    Pattern defect inspection apparatus and pattern defect inspection method
    5.
    发明专利
    Pattern defect inspection apparatus and pattern defect inspection method 有权

    公开(公告)号：JP5022781B2

    公开(公告)日：2012-09-12

    申请号：JP2007148920

    申请日：2007-06-05

    Applicant: 株式会社日立ハイテクノロジーズ

    Inventor： 道夫 中野 ,  博一 伊藤 ,  裕史 宮井 ,  高志 広井 ,  文彦 福永

    IPC: G01N23/225 ,  G01N21/956 ,  H01L21/66

    Abstract: PROBLEM TO BE SOLVED: To adjust automatically a threshold of defect determination corresponding to characteristic fluctuation of a pattern image detection part 110 or individual dispersion of a surface characteristic of a wafer 6 to be inspected. SOLUTION: An image processing part 120 has a constitution including a defect signal extraction part 21 for extracting a defect signal based on a differential image between a detection image of some domain on the surface of the wafer 6 to be inspected and a detection image of another domain having the same pattern as the domain; a defect signal accumulation part 23 for accumulating a defect signal amount of each pixel, and calculating its frequency distribution and dispersion relative to all pixels in the differential image; an offset calculation part 24 for calculating an offset amount of the frequency distribution by comparing the calculated dispersion with a dispersion of a reference frequency distribution acquired from a reference wafer 6 to be inspected; and a defect determination part 25 for correcting a reference defect determination threshold set beforehand by the offset amount, and performing defect determination of the defect signal relative to a defect image based on the corrected defect determination threshold. COPYRIGHT: (C)2009,JPO&INPIT

    Semiconductor wafer inspection equipment
    6.
    发明专利
    Semiconductor wafer inspection equipment 有权

    公开(公告)号：JP4857240B2

    公开(公告)日：2012-01-18

    申请号：JP2007280180

    申请日：2007-10-29

    Applicant: 株式会社日立ハイテクノロジーズ

    Inventor： 道夫 中野 ,  博一 伊藤 ,  裕史 宮井 ,  高志 広井

    IPC: H01L21/66 ,  G01N23/225

    Abstract: PROBLEM TO BE SOLVED: To inspect under proper condition, even if the intensities of secondary electrons or reflected electrons vary temporally. SOLUTION: An semiconductor wafer inspection device includes an irradiation optical systems 1 and 4 for irradiating an inspection target with an electron beam, a scanning part 7 for scanning an irradiation position of the irradiation optical system in an X direction and a Y direction; a charging control electrode 5 for controlling secondary electrons or reflected electrons, generated on the inspection target due to the irradiation with the electron beam, a sensor 13 for detecting the secondary electrons or the reflected electrons via the electrification control electrode; an A/D converter 14 for sequentially converting a signal detected by the sensor into a digital image signal; from the irradiation start time of the electron beam; an addition circuit 15 for creating a detection image, by adding the digital image signal from a first set time to a second set time for each pixel; and an image processing circuit 16 for determining defects, by comparing the detected image with a reference image of a circuit pattern formed on the object of inspection. COPYRIGHT: (C)2008,JPO&INPIT

    Scanning electron microscope and method together its focal
    9.
    发明专利
    Scanning electron microscope and method together its focal 有权

    公开(公告)号：JP5372445B2

    公开(公告)日：2013-12-18

    申请号：JP2008240190

    申请日：2008-09-19

    Applicant: 株式会社日立ハイテクノロジーズ

    Inventor： 敏文 本田 ,  憲 藤井 ,  康弘 郡司 ,  高志 広井 ,  浩士 牧野

    IPC: H01J37/28 ,  H01J37/21

    Abstract: PROBLEM TO BE SOLVED: To solve a problem that in order to realize an electron optical system in which a surface electric field control electrode is installed and a primary electron beam diameter is reduced, the surface electric field control electrode needs to be adjacent to a wafer, and for that reason, it becomes impossible to carry out height detection for focusing. SOLUTION: A height measurement position is shifted from a primary electron irradiation position, and a height correction mechanism is installed to correct height shift due to differences of horizontal position of the height measurement position, the primary electron irradiation position, and time. Moreover, in order to minimize amount of shift, a shield plate having the same potential as that of the wafer is placed at the surrounding of the surface electric field control electrode, and height measurement is carried out by installing a light path at the plate. COPYRIGHT: (C)2010,JPO&INPIT

    Defect inspection method and defect inspection apparatus
    10.
    发明专利
    Defect inspection method and defect inspection apparatus 有权

    公开(公告)号：JP5022191B2

    公开(公告)日：2012-09-12

    申请号：JP2007298284

    申请日：2007-11-16

    Applicant: 株式会社日立ハイテクノロジーズ

    Inventor： 高志 広井 ,  敏文 本田 ,  直樹 細谷

    IPC: G01N23/225 ,  G01N21/956 ,  G06T1/00 ,  H01L21/66

    Abstract: PROBLEM TO BE SOLVED: To detect a defect at the optimal sensitivity for each pattern region by dividing the pattern regions precisely and dynamically and changing the defect inspection method and sensitivity for each region. SOLUTION: The image feature amount is calculated from an inspection image of a semiconductor wafer, pattern region division is performed, and the inspection method and sensitivity (defect inspection threshold) preset for each pattern region are changed, thereby performing the defect inspection. A recipe setting GUI for presetting a parameter required for determining the pattern region and the defect inspection method and sensitivity corresponding to each pattern region are provided. COPYRIGHT: (C)2009,JPO&INPIT

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