荷電粒子線応用装置
    1.
    发明专利
    荷電粒子線応用装置 审中-公开
    充电粒子应用器件

    公开(公告)号:JP2014229481A

    公开(公告)日:2014-12-08

    申请号:JP2013108240

    申请日:2013-05-22

    CPC classification number: H01J37/12 H01J37/153 H01J2237/15 H01J2237/1534

    Abstract: 【課題】超高安定な電源を用いることなく、色収差や球面収差を補正し、高分解能観察や検査が可能な荷電粒子線応用装置を提供する。【解決手段】荷電粒子線101を試料103上に照射する荷電粒子線応用装置において、荷電粒子線101の光軸104を含む領域に偏向器が複数配置された偏向器アレイ107を少なくとも1つ備え、偏向器アレイ107は、荷電粒子線101に対して凹レンズの機能を有する。【選択図】図1

    Abstract translation: 要解决的问题:提供一种能够校正色差和球面像差并且不使用超高稳定电源进行高分辨率观察和检查的带电粒子射线施加装置。解决方案:照射样品的带电粒子射线施加装置 带有带电粒子射线101的103具有至少一个偏转器阵列107,其中多个偏转器布置在包括带电粒子射线101的光轴104的区域中。偏转器阵列107具有凹透镜的功能, 带电粒子射线101。

    Electron beam application device and electron beam adjustment method
    2.
    发明专利
    Electron beam application device and electron beam adjustment method 有权
    电子束应用器件和电子束调整方法

    公开(公告)号:JP2013239329A

    公开(公告)日:2013-11-28

    申请号:JP2012111354

    申请日:2012-05-15

    CPC classification number: H01J37/05 H01J37/153 H01J37/28

    Abstract: PROBLEM TO BE SOLVED: To provide an electron beam application device in which the profile, or the like, of an electron beam in the opposite direction can be adjusted without affecting the electron beam in one direction.SOLUTION: The electron beam application device includes an EXB deflector 101 having 8 or more poles of electric field deflector and magnetic field deflector, respectively, first ratio and strength adjustment means 110, and second ratio and strength adjustment means 111. The first ratio and strength adjustment means 110 adjusts the ratio and strength of a dipole electric field and a dipole magnetic field generated by the EXB deflector 101, and the second ratio and strength adjustment means 111 adjusts the ratio and strength of a quadrupole electric field and a quadrupole magnetic field generated by the EXB deflector 101.

    Abstract translation: 要解决的问题:提供一种电子束施加装置,其中可以调节相反方向的电子束的轮廓等,而不会在一个方向上影响电子束。解决方案:电子束施加装置包括: 分别具有8个或更多个电场偏转器和磁场偏转器极的EXB偏转器101,第一比率和强度调节装置110以及第二比值和强度调节装置111.第一比率和强度调节装置110调节 由EXB偏转器101产生的偶极电场和偶极磁场,并且第二比值和强度调节装置111调节由EXB偏转器101产生的四极电场和四极磁场的比率和强度。

    Electron-beam drawing apparatus, electron beam tester, and electron beam microscope
    3.
    发明专利
    Electron-beam drawing apparatus, electron beam tester, and electron beam microscope 有权
    电子束绘图设备,电子束测试仪和电子束显微镜

    公开(公告)号:JP2007287895A

    公开(公告)日:2007-11-01

    申请号:JP2006112895

    申请日:2006-04-17

    CPC classification number: H01J37/3174

    Abstract: PROBLEM TO BE SOLVED: To provide an electron beam drawing apparatus or electron beam tester and an electron beam microscope which enable a high speed and high accuracy electron beam deflection.
    SOLUTION: The drawing apparatus comprises a means for matching the impedance of deflection electrodes in a vacuum chamber 101, this matching means is a pair or a plurality of resistors disposed with the center at a transmitting means around a terminator of the transmitting means, or a tubular resistor, and further is a shield electrode disposed between the terminator of the transmitting means and the electrodes to adjust the shield electrode and the electrodes of a deflector. It has a temperature controller for holding constant the temperatures of the transmitting means, the impedance matching means and the deflector, while the transmitting means has a coaxial structure and its outer conductor is used for a heat conducting medium and enclosed with a metal.
    COPYRIGHT: (C)2008,JPO&INPIT

    Abstract translation: 要解决的问题:提供能够实现高速度和高精度的电子束偏转的电子束描绘装置或电子束测试器和电子束显微镜。 解决方案:绘图装置包括用于匹配真空室101中的偏转电极的阻抗的装置,该匹配装置是一对或多个电阻器,其设置在发送装置周围的发送装置的终端器周围的中心 或管状电阻器,并且还设置在发送装置的终端器和电极之间的屏蔽电极,以调节屏蔽电极和偏转器的电极。 它具有用于保持发送装置,阻抗匹配装置和偏转器的温度恒定的温度控制器,而发送装置具有同轴结构,其外部导体用于导热介质并用金属包围。 版权所有(C)2008,JPO&INPIT

    System and method for electron beam lithography
    4.
    发明专利
    System and method for electron beam lithography 有权
    电子束光刻系统与方法

    公开(公告)号:JP2007103699A

    公开(公告)日:2007-04-19

    申请号:JP2005292147

    申请日:2005-10-05

    Abstract: PROBLEM TO BE SOLVED: To provide an electron beam lithography technology which is capable of making a drawing with high dimensional accuracy in an electron beam lithography system that uses a variably shaped beam.
    SOLUTION: The electron beam lithography system using a variably shaped beam is equipped with electron beam detectors 130 and 131 used for measuring the amount of current of the variable shaped beam, and the current values measured corresponding to the beam sizes of the variably shaped beam are fed back to the exposure time of an electron beam so as to solve the problem.
    COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题:提供一种电子束光刻技术,其能够在使用可变形的光束的电子束光刻系统中以高尺寸精度绘制。 解决方案:使用可变形光束的电子束光刻系统配备有用于测量可变形光束的电流量的电子束检测器130和131,以及可变形光束的光束尺寸对应的电流值 反射回电子束的曝光时间,以解决问题。 版权所有(C)2007,JPO&INPIT

    Electron beam detector, electron beam measurement method, and electron beam drawing device
    5.
    发明专利
    Electron beam detector, electron beam measurement method, and electron beam drawing device 有权
    电子束检测器,电子束测量方法和电子束绘图装置

    公开(公告)号:JP2007081263A

    公开(公告)日:2007-03-29

    申请号:JP2005269598

    申请日:2005-09-16

    Abstract: PROBLEM TO BE SOLVED: To provide an electron beam measurement technique that can highly precisely measure a beam size covering a road range in an electron beam drawing device.
    SOLUTION: A slit aperture and a knife edge are formed on an electron beam detector 218, and it is possible to do highly precise measurement across a broad-range beam size by alternately using a first beam size measurement method that employs the slit and a second measurement method that employs the knife edge. Based on measured values, a correction is made on the beam size, which is fed back to the drawing controller 211, thus bringing about highly precise drawings.
    COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题:提供一种电子束测量技术,其可以高精度地测量覆盖电子束拉制装置中的道路范围的光束尺寸。 解决方案:在电子束检测器218上形成狭缝孔和刀刃,并且可以通过交替使用采用狭缝的第一光束尺寸测量方法在宽范围的光束尺寸上进行高度精确的测量 以及采用刀刃的第二测量方法。 基于测量值,对光束尺寸进行校正,该尺寸被反馈到绘图控制器211,从而产生高精度图纸。 版权所有(C)2007,JPO&INPIT

    Electron beam device, and electron beam observation method
    6.
    发明专利
    Electron beam device, and electron beam observation method 有权
    电子束装置和电子束观测方法

    公开(公告)号:JP2014146526A

    公开(公告)日:2014-08-14

    申请号:JP2013014987

    申请日:2013-01-30

    Abstract: PROBLEM TO BE SOLVED: To solve such problems that the contrast becomes obscure at an observation part in an electron beam device, due to miniaturization or three-dimensional device structure, and that it takes time to search the irradiation conditions of primary electrons for optimizing the contrast, or to search the filtering conditions of detection electrons, or the measurement reproducibility is deteriorated.SOLUTION: The information of sample shape and the information of potential are acquired simultaneously, by using means for separating the energy of electrons generated from a sample, and signal processing means performing the addition and subtraction processing of the plurality of detection means, and then the filtering conditions of secondary electrons are determined for each irradiation conditions of primary electrons. Consequently, the search times of the irradiation conditions and the filtering conditions are shortened, and an optimum contrast can be obtained. Furthermore, the charging is monitored in real time during observation, and a highly accurate length measurement value is obtained while enhancing the reliability.

    Abstract translation: 要解决的问题:为了解决由于小型化或三维器件结构而导致的电子束器件的观察部分的对比度变得模糊的问题,并且需要时间来搜索一次电子的照射条件以优化 检测电子的过滤条件,或测量再现性劣化。解决方案:通过分离样品产生的电子能量的手段同时获取样品形状和电位信息,以及 信号处理装置执行多个检测装置的加法和减法处理,然后针对一次电子的每个照射条件确定二次电子的滤波条件。 因此,缩短了照射条件的搜索时间和过滤条件,并且可以获得最佳的对比度。 此外,在观察期间实时监视充电,并且在提高可靠性的同时获得高精度的长度测量值。

    Electron beam application device and lens array
    7.
    发明专利
    Electron beam application device and lens array 有权
    电子束应用设备和镜头阵列

    公开(公告)号:JP2013196951A

    公开(公告)日:2013-09-30

    申请号:JP2012063816

    申请日:2012-03-21

    Abstract: PROBLEM TO BE SOLVED: To provide an electron beam application device and a lens array which compensate image field curvature aberration under various optical conditions.SOLUTION: An electron beam application device includes a lens array 110 which has a plurality of electrodes each having a plurality of apertures formed. An imaging position (for example, 111b) of a reference beam and curvature of a lens array image field 112 are adjusted independently by individually setting aperture diameter distribution of pluralities of apertures formed in the respective electrodes and independently controlling voltages applied to the respective electrodes.

    Abstract translation: 要解决的问题:提供一种在各种光学条件下补偿图像场曲率像差的电子束施加装置和透镜阵列。解决方案:电子束施加装置包括透镜阵列110,其具有多个电极,每个电极具有多个 形成孔。 参考光束的成像位置(例如,111b)和透镜阵列图像场112的曲率通过分别设定形成在各个电极中的多个孔的孔径分布独立地进行调节,并独立地控制施加到各个电极的电压。

    Charge reducing apparatus, exposure apparatus, measuring apparatus, and manufacturing method of device
    8.
    发明专利
    Charge reducing apparatus, exposure apparatus, measuring apparatus, and manufacturing method of device 审中-公开
    充电装置,曝光装置,测量装置和装置的制造方法

    公开(公告)号:JP2007018860A

    公开(公告)日:2007-01-25

    申请号:JP2005198838

    申请日:2005-07-07

    Abstract: PROBLEM TO BE SOLVED: To provide a charge reducing apparatus used in an exposing device or a measuring device which irradiates a charged particle beam from a charged particle source to a sample, by applying deflection control by deflection electrodes disposed face to face in a vacuum column to reduce the charge of a portion charged with positive or negative electricity by the charged particle beam in the deflection electrodes, the exposure apparatus and the measuring apparatus equipped with the charge reducing apparatus, and to provide a manufacturing method for a device that uses the exposure device.
    SOLUTION: This charge reducing device has an electron beam irradiation means to irradiate an electron beam to the charged portion of the deflection electrodes which are charged with positive or negative electricity by the charged particle beam, and a means of changing the irradiation energy of the electron beam. Thereby, charge of the deflection electrodes is reduced; and since even if the deflection electrodes are charged with both positive and negative electricity, two of positive and negative beam sources are not used, but charge can be reduced by using only the electron beam, the constitution of the device can be simplified.
    COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题:提供一种在曝光装置或测量装置中使用的电荷减少装置,其将带电粒子源的带电粒子束照射到样品,通过将面对面设置的偏转电极施加偏转控制, 真空柱,以减少偏转电极中的带电粒子束带电的部分的电荷,曝光装置和装备有电荷减少装置的测量装置,并提供一种装置的制造方法, 使用曝光装置。 解决方案:该电荷减少装置具有电子束照射装置,用于通过带电粒子束将电子束照射到带有正或负电的偏转电极的带电部分,以及改变照射能量的手段 的电子束。 由此,偏转电极的电荷减少; 并且由于即使偏转电极具有正电荷和负电二极,也不使用两个正和负光束源,但是仅通过使用电子束可以减少电荷,因此能够简化装置的结构。 版权所有(C)2007,JPO&INPIT

    Electron beam current measuring method, electron beam drawing apparatus, and electron beam detector
    9.
    发明专利
    Electron beam current measuring method, electron beam drawing apparatus, and electron beam detector 审中-公开
    电子束电流测量方法,电子束绘图设备和电子束检测器

    公开(公告)号:JP2006079911A

    公开(公告)日:2006-03-23

    申请号:JP2004261776

    申请日:2004-09-09

    Abstract: PROBLEM TO BE SOLVED: To reduce influence of noise superimposed on a long transmission path, when highly precisely measuring a feeble beam current, in an electron beam drawing device, and to provide technology to highly precisely and efficiently measure the feeble current in a multiple beam drawing apparatus.
    SOLUTION: While measuring the beam current by using an electron beam detecting element 109 and a switch 110 to cut off and connect a detection signal transmitting path 124, the electron beam detecting element 109 is cut off from the detection signal transmitting path 124, a detected signal is accumulated in the electron beam detecting element 109, and the electron beam detecting element 109 is connected to the detection signal transmitting path 124 at the same time when the measurement is finished, and thereby the accumulated signal is measured. In addition, since a plurality of similar measuring methods are simultaneously applied, a plurality of electron beams are highly precisely measured by using the electron beam detecting element and a plurality of the switches.
    COPYRIGHT: (C)2006,JPO&NCIPI

    Abstract translation: 要解决的问题:为了减少叠加在长传输路径上的噪声的影响,当在电子束拉制装置中高度精确地测量微弱的电流时,并提供技术以高精度和有效率地测量微弱的电流 多光束绘图装置。 解决方案:通过使用电子束检测元件109和开关110来测量束电流,以切断并连接检测信号传输路径124,电子束检测元件109从检测信号发送路径124切断 在电子束检测元件109中累积检测信号,并且在测量结束的同时电子束检测元件109与检测信号发送路径124连接,从而测量累积信号。 此外,由于同时施加多个类似的测量方法,所以通过使用电子束检测元件和多个开关来高度精确地测量多个电子束。 版权所有(C)2006,JPO&NCIPI

    Electron beam detector, electron beam application device and observation method using the same
    10.
    发明专利
    Electron beam detector, electron beam application device and observation method using the same 有权
    电子束检测器,电子束应用器件及使用其的观察方法

    公开(公告)号:JP2011258509A

    公开(公告)日:2011-12-22

    申请号:JP2010134039

    申请日:2010-06-11

    Abstract: PROBLEM TO BE SOLVED: To solve a problem for an electron beam application device that, spacial restriction makes it difficult to simultaneously arrange a plurality of electron beam detectors and electromagnetic wave generation means, even though that will enhance performance.SOLUTION: A electron beam application device has a configuration 100 in which electron beam detectors (102, 105) and electromagnetic wave generation means (102, 104, 108, 109) are simultaneously arranged, whereby a plurality of electron beam detectors and electromagnetic wave generation means can be arranged inside the electron beam application device to enable stable image observation in a long term due to potential control of a sample surface and/or removing contaminant by the electromagnetic wave generation means.

    Abstract translation: 解决的问题为了解决空间限制使得难以同时布置多个电子束检测器和电磁波产生装置的电子束施加装置的问题,即使这将提高性能。 解决方案:电子束施加装置具有其中同时布置电子束检测器(102,105)和电磁波产生装置(102,104,108,109)的配置100,由此多个电子束检测器和 电磁波产生装置可以布置在电子束施加装置的内部,以便由于电磁波发生装置的样品表面的潜在控制和/或去除污染物而能够长期稳定地进行图像观察。 版权所有(C)2012,JPO&INPIT

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