Abstract:
PROBLEM TO BE SOLVED: To provide an electron beam application device in which the profile, or the like, of an electron beam in the opposite direction can be adjusted without affecting the electron beam in one direction.SOLUTION: The electron beam application device includes an EXB deflector 101 having 8 or more poles of electric field deflector and magnetic field deflector, respectively, first ratio and strength adjustment means 110, and second ratio and strength adjustment means 111. The first ratio and strength adjustment means 110 adjusts the ratio and strength of a dipole electric field and a dipole magnetic field generated by the EXB deflector 101, and the second ratio and strength adjustment means 111 adjusts the ratio and strength of a quadrupole electric field and a quadrupole magnetic field generated by the EXB deflector 101.
Abstract:
PROBLEM TO BE SOLVED: To provide an electron beam drawing apparatus or electron beam tester and an electron beam microscope which enable a high speed and high accuracy electron beam deflection. SOLUTION: The drawing apparatus comprises a means for matching the impedance of deflection electrodes in a vacuum chamber 101, this matching means is a pair or a plurality of resistors disposed with the center at a transmitting means around a terminator of the transmitting means, or a tubular resistor, and further is a shield electrode disposed between the terminator of the transmitting means and the electrodes to adjust the shield electrode and the electrodes of a deflector. It has a temperature controller for holding constant the temperatures of the transmitting means, the impedance matching means and the deflector, while the transmitting means has a coaxial structure and its outer conductor is used for a heat conducting medium and enclosed with a metal. COPYRIGHT: (C)2008,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide an electron beam lithography technology which is capable of making a drawing with high dimensional accuracy in an electron beam lithography system that uses a variably shaped beam. SOLUTION: The electron beam lithography system using a variably shaped beam is equipped with electron beam detectors 130 and 131 used for measuring the amount of current of the variable shaped beam, and the current values measured corresponding to the beam sizes of the variably shaped beam are fed back to the exposure time of an electron beam so as to solve the problem. COPYRIGHT: (C)2007,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide an electron beam measurement technique that can highly precisely measure a beam size covering a road range in an electron beam drawing device. SOLUTION: A slit aperture and a knife edge are formed on an electron beam detector 218, and it is possible to do highly precise measurement across a broad-range beam size by alternately using a first beam size measurement method that employs the slit and a second measurement method that employs the knife edge. Based on measured values, a correction is made on the beam size, which is fed back to the drawing controller 211, thus bringing about highly precise drawings. COPYRIGHT: (C)2007,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To solve such problems that the contrast becomes obscure at an observation part in an electron beam device, due to miniaturization or three-dimensional device structure, and that it takes time to search the irradiation conditions of primary electrons for optimizing the contrast, or to search the filtering conditions of detection electrons, or the measurement reproducibility is deteriorated.SOLUTION: The information of sample shape and the information of potential are acquired simultaneously, by using means for separating the energy of electrons generated from a sample, and signal processing means performing the addition and subtraction processing of the plurality of detection means, and then the filtering conditions of secondary electrons are determined for each irradiation conditions of primary electrons. Consequently, the search times of the irradiation conditions and the filtering conditions are shortened, and an optimum contrast can be obtained. Furthermore, the charging is monitored in real time during observation, and a highly accurate length measurement value is obtained while enhancing the reliability.
Abstract:
PROBLEM TO BE SOLVED: To provide an electron beam application device and a lens array which compensate image field curvature aberration under various optical conditions.SOLUTION: An electron beam application device includes a lens array 110 which has a plurality of electrodes each having a plurality of apertures formed. An imaging position (for example, 111b) of a reference beam and curvature of a lens array image field 112 are adjusted independently by individually setting aperture diameter distribution of pluralities of apertures formed in the respective electrodes and independently controlling voltages applied to the respective electrodes.
Abstract:
PROBLEM TO BE SOLVED: To provide a charge reducing apparatus used in an exposing device or a measuring device which irradiates a charged particle beam from a charged particle source to a sample, by applying deflection control by deflection electrodes disposed face to face in a vacuum column to reduce the charge of a portion charged with positive or negative electricity by the charged particle beam in the deflection electrodes, the exposure apparatus and the measuring apparatus equipped with the charge reducing apparatus, and to provide a manufacturing method for a device that uses the exposure device. SOLUTION: This charge reducing device has an electron beam irradiation means to irradiate an electron beam to the charged portion of the deflection electrodes which are charged with positive or negative electricity by the charged particle beam, and a means of changing the irradiation energy of the electron beam. Thereby, charge of the deflection electrodes is reduced; and since even if the deflection electrodes are charged with both positive and negative electricity, two of positive and negative beam sources are not used, but charge can be reduced by using only the electron beam, the constitution of the device can be simplified. COPYRIGHT: (C)2007,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To reduce influence of noise superimposed on a long transmission path, when highly precisely measuring a feeble beam current, in an electron beam drawing device, and to provide technology to highly precisely and efficiently measure the feeble current in a multiple beam drawing apparatus. SOLUTION: While measuring the beam current by using an electron beam detecting element 109 and a switch 110 to cut off and connect a detection signal transmitting path 124, the electron beam detecting element 109 is cut off from the detection signal transmitting path 124, a detected signal is accumulated in the electron beam detecting element 109, and the electron beam detecting element 109 is connected to the detection signal transmitting path 124 at the same time when the measurement is finished, and thereby the accumulated signal is measured. In addition, since a plurality of similar measuring methods are simultaneously applied, a plurality of electron beams are highly precisely measured by using the electron beam detecting element and a plurality of the switches. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To solve a problem for an electron beam application device that, spacial restriction makes it difficult to simultaneously arrange a plurality of electron beam detectors and electromagnetic wave generation means, even though that will enhance performance.SOLUTION: A electron beam application device has a configuration 100 in which electron beam detectors (102, 105) and electromagnetic wave generation means (102, 104, 108, 109) are simultaneously arranged, whereby a plurality of electron beam detectors and electromagnetic wave generation means can be arranged inside the electron beam application device to enable stable image observation in a long term due to potential control of a sample surface and/or removing contaminant by the electromagnetic wave generation means.