公开(公告)号：JP2014229481A

公开(公告)日：2014-12-08

申请号：JP2013108240

申请日：2013-05-22

Applicant: 株式会社日立ハイテクノロジーズ ,  Hitachi High-Technologies Corp

Inventor： MARUYAMA MOMOYO ,  TANIMOTO AKIYOSHI ,  SAKAKIBARA SHIN ,  OTA HIROYA ,  HAYATA YASUNARI ,  SUZUKI NAOMASA ,  ITO HIROYUKI

IPC: H01J37/12 ,  H01J37/153

CPC classification number: H01J37/12 ,  H01J37/153 ,  H01J2237/15 ,  H01J2237/1534

Abstract: 【課題】超高安定な電源を用いることなく、色収差や球面収差を補正し、高分解能観察や検査が可能な荷電粒子線応用装置を提供する。【解決手段】荷電粒子線101を試料103上に照射する荷電粒子線応用装置において、荷電粒子線101の光軸104を含む領域に偏向器が複数配置された偏向器アレイ107を少なくとも1つ備え、偏向器アレイ107は、荷電粒子線101に対して凹レンズの機能を有する。【選択図】図1

Abstract translation: 要解决的问题：提供一种能够校正色差和球面像差并且不使用超高稳定电源进行高分辨率观察和检查的带电粒子射线施加装置。解决方案：照射样品的带电粒子射线施加装置 带有带电粒子射线101的103具有至少一个偏转器阵列107，其中多个偏转器布置在包括带电粒子射线101的光轴104的区域中。偏转器阵列107具有凹透镜的功能， 带电粒子射线101。

公开(公告)号：JP2007207688A

公开(公告)日：2007-08-16

申请号：JP2006027850

申请日：2006-02-06

Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

Inventor： MURAKOSHI HISAYA ,  TODOKORO HIDEO ,  SHINADA HIROYUKI ,  HASEGAWA MASAKI ,  MARUYAMA MOMOYO

IPC: H01J37/29 ,  G01N23/225 ,  H01J37/05 ,  H01J37/153 ,  H01L21/66

CPC classification number: H01J37/29 ,  H01J2237/057 ,  H01J2237/1508 ,  H01J2237/24592 ,  H01J2237/2538 ,  H01J2237/2817

Abstract: PROBLEM TO BE SOLVED: To provide a defect inspection device for detecting a defect part of a pattern formed on a wafer at high speed and at high precision, and by means of acquiring a stable mirror electron image and by solving problems that images obtained by a mirror electron microscope would tend to reflect shapes of equi-potential surface to reflect the mirror electron, and that image interpretation would become complicated, while a general electron microscope image reflects shapes and materials of a sample.
SOLUTION: According to a structure of a pattern to be measured or an object of an interesting defect, following means of controlling the reflecting face of the mirror electron are installed. (1) According to kinds of an electron source, operating conditions, and kinds of patterns on the sample 7 to be measured, a means to control an electric potential difference between the electron source 1 corresponding to a height of the reflecting face of the mirror electron beam and the sample 7 is installed. (2) A means to control an energy distribution of the irradiation electron beam is installed by arranging an energy filter 9 at an irradiation system. Testing by distinguishing sizes and electric potentials of the patterns becomes possible, and an insulation material sample can be observed at a high resolution.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供一种用于以高速和高精度检测在晶片上形成的图案的缺陷部分的缺陷检查装置，并且通过获得稳定的镜像电子图像并且通过解决图像的问题 通过镜电子显微镜获得的倾向将反映等电位表面的形状以反射镜电子，并且图像解释将变得复杂，而通常的电子显微镜图像反映样品的形状和材料。 解决方案：根据要测量的图案的结构或感兴趣的缺陷的对象，安装控制镜电子的反射面的后续装置。 （1）根据电子源的种类，要测量的样品7上的图案的工作条件和种类，控制与反射镜的反射面的高度相对应的电子源1之间的电位差的手段 电子束和样品7安装。 （2）通过在照射系统上配置能量过滤器9来安装控制照射电子束的能量分布的手段。 通过区分图案的尺寸和电位进行测试成为可能，并且可以以高分辨率观察绝缘材料样品。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2014026834A

公开(公告)日：2014-02-06

申请号：JP2012166283

申请日：2012-07-26

Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

Inventor： ABE YUSUKE ,  YAMAMOTO TAKUMA ,  SAKAKIBARA SHIN ,  MARUYAMA MOMOYO

IPC: H01J37/09 ,  H01J37/22 ,  H01J37/28

Abstract: PROBLEM TO BE SOLVED: To provide an efficient secondary optical system adjustment method not relying upon the skill of an engineer, in a multi-beam charged particle beam application apparatus.SOLUTION: During adjustment of a secondary optical system, images of the individual secondary electron beams 120a-120c of a multi-beam secondary electron beam 120 separated by a beam separator 111 are focused on the detection surfaces of corresponding individual beam detectors 121a-121c of a secondary electron beam detector 121, via the aperture 127 of a secondary optical system aperture plate 124 provided between a lens on the final stage of a secondary optical system lens 123 and the secondary electron beam detector 121, and the secondary optical system is adjusted based on the two-dimensional image thereof.

Abstract translation: 要解决的问题：提供一种不依赖于工程师技能的有效的二次光学系统调整方法，在多光束带电粒子束施加装置中。解决方案：在二次光学系统的调整期间，单个次级电子的图像 由光束分离器111分离的多光束二次电子束120的光束120a-120c通过二次光学系统的孔127聚焦在二次电子束检测器121的相应的单个光束检测器121a-121c的检测表面上 基于其二维图像来调整设置在次级光学系统透镜123的最终级的透镜与二次电子束检测器121之间的孔径板124和次级光学系统。

公开(公告)号：JP2011228311A

公开(公告)日：2011-11-10

申请号：JP2011136946

申请日：2011-06-21

Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

Inventor： MAKINO HIROSHI ,  HASEGAWA MASAKI ,  MARUYAMA MOMOYO

IPC: H01J37/29 ,  G01N23/225 ,  G01Q30/02 ,  G01Q60/24 ,  H01J37/20 ,  H01J37/22 ,  H01J37/28

Abstract: PROBLEM TO BE SOLVED: To provide a device and a method to inspect height variations of a sample.SOLUTION: An inspection device comprises: a holder 211 holding a sample 29; a charge control unit 23 which electrically charges the sample 29 held by the holder 211; a retarding power supply 24 which applies a voltage to the sample 29 held by the holder 211; an electron optical system 20 which irradiates an electron beam toward the sample 29 supplied with the voltage from the retarding power supply 24, thereby causing mirror electrons retracted from the vicinity of a surface of the sample 29 to form an image; and an image processing unit 27 which processes a mirror image formed by the mirror electrons. The image processing unit 27 outputs, as height variations of the sample 29, information based on a difference between the mirror image formed by the mirror electrons and a standard mirror image prepared in advance.

Abstract translation: 要解决的问题：提供一种用于检查样品的高度变化的装置和方法。 检查装置包括：保持样品29的保持器211; 充电控制单元23，其对由保持器211保持的样本29进行充电; 延迟电源24，其对由保持器211保持的样本29施加电压; 电子光学系统20，其向来自延迟电源24的电压供给电子束照射电子束，从而使得从电极24的表面附近缩回的镜电子形成图像; 以及处理由镜电子形成的镜像的图像处理单元27。 图像处理单元27作为样本29的高度变化输出基于由镜电子形成的镜像与预先准备的标准镜像之间的差的信息。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2011187191A

公开(公告)日：2011-09-22

申请号：JP2010048560

申请日：2010-03-05

Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

Inventor： HIROI TAKASHI ,  OMINAMI YUSUKE ,  MARUYAMA MOMOYO ,  TSUNO NATSUKI

IPC: H01J37/22 ,  H01J37/147 ,  H01J37/20 ,  H01J37/24 ,  H01J37/28 ,  H01L21/66

CPC classification number: H01J37/28 ,  H01J37/265 ,  H01J2237/221 ,  H01J2237/24592 ,  H01J2237/2817 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To efficiently monitor a frequency of defect generation and characteristic likelihood of an ROI region with high sensitivity. SOLUTION: A plurality of electron beams arranged in matrix are applied on a circuit pattern while thinning in a stage movement direction in synchronization with continuous movement of a stage. Generated secondary electrons or the like are obtained, and images acquired in a same region are averaged to acquire an image of a high S/N rapidly to determine defect of the circuit pattern from the acquired image. By acquiring the image not in an adjacent region but by thinning in moving in a direction vertical to stage movement, the frequency of defect generation and characteristic likelihood of only the ROI region or the entire circuit pattern can be efficiently monitored. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：高灵敏度地有效地监视ROI区域的缺陷产生频率和特征似然性。 解决方案：与阶段的连续移动同步，在电路图案上施加多个以矩阵形式布置的电子束，同时沿着平台移动方向变薄。 获得产生的二次电子等，并且在相同区域中获取的图像被平均以快速获取高S / N的图像，以从所获取的图像中确定电路图案的缺陷。 通过不是在相邻区域中获取图像而是通过在垂直于载片台移动的方向上移动而变薄，因此可以有效地监视仅有ROI区域或整个电路图案的缺陷产生频率和特征似然性。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2009134926A

公开(公告)日：2009-06-18

申请号：JP2007308758

申请日：2007-11-29

Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

Inventor： MARUYAMA MOMOYO ,  OTA HIROYA

IPC: H01J37/28 ,  G01N23/225 ,  H01J37/10 ,  H01L21/66

Abstract: PROBLEM TO BE SOLVED: To provide a multi-beam type charged particle beam application device having a function wherein a primary beam is incident to a sample from a slanting direction without relatively inclining an electrooptic system and the sample.
SOLUTION: In the multi-beam type charged particle beam application device, lenses 140a, 140b are controlled by an optical control circuit 139 so as to focus on the sample while lens voltage of an array lens 109 is turned off. The primary beam 107 is irradiated to one point on the sample by a plurality of directions, namely, a plurality of angles against a sample wafer 115, and a reached point of the primary beam 107 on the sample is maintained at a fixed level without inclining the electrooptic system and the sample. Furthermore, an irradiating angle of the primary beam 107 for irradiation to the sample wafer 115 can be selected by individually controlling a blanca array 116 arranged by corresponding to an aperture array 108 and the array lens 109.
COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 解决的问题：提供一种多光束型带电粒子束施加装置，其具有主光束从倾斜方向入射到样品而不相对倾斜电光系统和样品的功能。 解决方案：在多光束型带电粒子束施加装置中，透镜140a，140b由光学控制电路139控制，以便在阵列透镜109的透镜电压关闭时聚焦在样本上。 初级光束107通过多个方向照射在样品上的一个点上，即对样品晶片115的多个角度，样品上的主光束107的到达点保持在固定的水平而不倾斜 电光系统和样品。 此外，可以通过单独控制通过对应于孔径阵列108和阵列透镜109布置的布置阵列116来选择用于照射到样品晶片115的一次光束107的照射角度。（C）2009 ，JPO＆INPIT

公开(公告)号：JP2007280614A

公开(公告)日：2007-10-25

申请号：JP2006101468

申请日：2006-04-03

Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

Inventor： MURAKOSHI HISAYA ,  TODOKORO HIDEO ,  SHINADA HIROYUKI ,  HASEGAWA MASAKI ,  MARUYAMA MOMOYO

IPC: H01J37/29 ,  H01L21/66

Abstract: PROBLEM TO BE SOLVED: To provide a defect inspecting technology capable of observing or inspecting a sample by distinguishing a contrast resulting from a shape from another contrast resulting from a potential condition.
SOLUTION: In this reflection image forming electron microscope, a defect inspecting device has a preliminary charge control device 40 to control electrostatic charge of a sample surface by charging the sample surface by irradiation of a planar electron beam, and a means to separate the contrast resulting from the shape defect of the sample from another contrast resulting from a potential defect from a mirror electron image obtained, by structuring it so as to control the potential of the sample depending on the kinds of objective defect of the sample.
COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供能够通过区分来自形状的对比度与由潜在条件引起的另一个对比度来观察或检查样本的缺陷检查技术。 解决方案：在该反射成像电子显微镜中，缺陷检查装置具有初步充电控制装置40，用于通过平面电子束的照射对样品表面进行充电来控制样品表面的静电电荷，以及分离装置 由来自由所获得的镜电子图像的潜在缺陷产生的另一对比度的样品的形状缺陷产生的对比度，通过构造它来根据样品的目标缺陷的种类来控制样品的电位。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2014146526A

公开(公告)日：2014-08-14

申请号：JP2013014987

申请日：2013-01-30

Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

Inventor： SAKAKIBARA SHIN ,  NASU OSAMU ,  KAZUMI HIDEYUKI ,  FUKUDA MUNEYUKI ,  OTA HIROYA ,  TANIMOTO AKIYOSHI ,  MARUYAMA MOMOYO

IPC: H01J37/28 ,  H01J37/05 ,  H01J37/147 ,  H01J37/153 ,  H01J37/20 ,  H01J37/22 ,  H01J37/24 ,  H01J37/244 ,  H01J37/29

Abstract: PROBLEM TO BE SOLVED: To solve such problems that the contrast becomes obscure at an observation part in an electron beam device, due to miniaturization or three-dimensional device structure, and that it takes time to search the irradiation conditions of primary electrons for optimizing the contrast, or to search the filtering conditions of detection electrons, or the measurement reproducibility is deteriorated.SOLUTION: The information of sample shape and the information of potential are acquired simultaneously, by using means for separating the energy of electrons generated from a sample, and signal processing means performing the addition and subtraction processing of the plurality of detection means, and then the filtering conditions of secondary electrons are determined for each irradiation conditions of primary electrons. Consequently, the search times of the irradiation conditions and the filtering conditions are shortened, and an optimum contrast can be obtained. Furthermore, the charging is monitored in real time during observation, and a highly accurate length measurement value is obtained while enhancing the reliability.

Abstract translation: 要解决的问题：为了解决由于小型化或三维器件结构而导致的电子束器件的观察部分的对比度变得模糊的问题，并且需要时间来搜索一次电子的照射条件以优化 检测电子的过滤条件，或测量再现性劣化。解决方案：通过分离样品产生的电子能量的手段同时获取样品形状和电位信息，以及 信号处理装置执行多个检测装置的加法和减法处理，然后针对一次电子的每个照射条件确定二次电子的滤波条件。 因此，缩短了照射条件的搜索时间和过滤条件，并且可以获得最佳的对比度。 此外，在观察期间实时监视充电，并且在提高可靠性的同时获得高精度的长度测量值。

公开(公告)号：JP2014089820A

公开(公告)日：2014-05-15

申请号：JP2012237802

申请日：2012-10-29

Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

Inventor： FUKUDA MUNEYUKI ,  SUZUKI NAOMASA ,  IKEGAMI AKIRA ,  DOI HIDETO ,  MARUYAMA MOMOYO ,  SHOJO TOMOYASU

IPC: H01J37/141 ,  H01J37/153 ,  H01J37/28

CPC classification number: H01J37/1478 ,  H01J37/141 ,  H01J37/147 ,  H01J37/28 ,  H01J2237/141 ,  H01J2237/1415 ,  H01J2237/1506 ,  H01J2237/2801

Abstract: PROBLEM TO BE SOLVED: To provide a charged particle beam apparatus capable of measuring a sample at any inclination angle with high resolution.SOLUTION: A charged particle beam apparatus irradiating a sample 114 with a primary charged particle beam 110 to detect a secondary changed particle 115 generated, includes a beam tilt lens 113 having: a yoke magnetic path member 132 and a lens coil 134 for focusing the primary charged particle beam 110 on the sample 114; and a solenoid coil 133 having an upper end arranged on a side face of the yoke magnetic path member 132, and a lower end arranged between a pole piece tip end of the yoke magnetic path member 132 and the sample 114, the solenoid coil being used for inclining the primary charged particle beam 110 at any angle on the sample 114.

Abstract translation: 要解决的问题：提供一种能够以高分辨率以任何倾斜角度测量样品的带电粒子束装置。解决方案：带电粒子束装置用初级带电粒子束110照射样品114以检测次级改变的粒子115 包括具有：磁轭磁路构件132和用于将初级带电粒子束110聚焦在样本114上的透镜线圈134的束倾斜透镜113; 以及螺线管线圈133，其具有设置在磁轭磁路部件132的侧面上的上端，以及设置在磁轭磁路部件132的极片末端与样品114之间的下端，使用螺线管线圈 用于使原始带电粒子束110以样品114上的任何角度倾斜。

公开(公告)号：JP2013196951A

公开(公告)日：2013-09-30

申请号：JP2012063816

申请日：2012-03-21

Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

Inventor： TANIMOTO AKIYOSHI ,  OTA HIROYA ,  SAKAKIBARA SHIN ,  MARUYAMA MOMOYO ,  TANIMOTO NORIFUMI

IPC: H01J37/12 ,  H01J37/153 ,  H01L21/66

CPC classification number: H01J37/10 ,  H01J37/153 ,  H01J2237/1205 ,  H01J2237/121 ,  H01J2237/1534

Abstract: PROBLEM TO BE SOLVED: To provide an electron beam application device and a lens array which compensate image field curvature aberration under various optical conditions.SOLUTION: An electron beam application device includes a lens array 110 which has a plurality of electrodes each having a plurality of apertures formed. An imaging position (for example, 111b) of a reference beam and curvature of a lens array image field 112 are adjusted independently by individually setting aperture diameter distribution of pluralities of apertures formed in the respective electrodes and independently controlling voltages applied to the respective electrodes.

Abstract translation: 要解决的问题：提供一种在各种光学条件下补偿图像场曲率像差的电子束施加装置和透镜阵列。解决方案：电子束施加装置包括透镜阵列110，其具有多个电极，每个电极具有多个 形成孔。 参考光束的成像位置（例如，111b）和透镜阵列图像场112的曲率通过分别设定形成在各个电极中的多个孔的孔径分布独立地进行调节，并独立地控制施加到各个电极的电压。