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    Electron beam application equipment
    1.
    发明专利
    Electron beam application equipment 有权
    电子束应用器件

    公开(公告)号：JP2008165990A

    公开(公告)日：2008-07-17

    申请号：JP2006350839

    申请日：2006-12-27

    Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

    Inventor： TANIMOTO AKIYOSHI ,  OTA HIROYA ,  MAKINO HIROSHI ,  FUNATSU RYUICHI

    IPC: H01J37/28 ,  G01N23/225 ,  H01J37/20 ,  H01J37/244 ,  H01L21/66

    CPC classification number: H01J37/28 ,  H01J37/244 ,  H01J2237/0435 ,  H01J2237/2448 ,  H01J2237/24564 ,  H01J2237/24592

    Abstract: PROBLEM TO BE SOLVED: To provide an electron beam application device capable of achieving charge control without reducing a throughput while maintaining good convergence of a primary beam for inspection. SOLUTION: A plurality of primary beams are formed from a single electron source, and charge of a sample is controlled by at least one primary beam, and at the same time, inspection of the sample is conducted by using another primary beam. Furthermore, surface electric field intensity is set independently on an irradiation region of the primary beam for charge control and an irradiation region of the primary beam for inspection. A current of the primary beam for charge control, and an interval between the primary beam of the charge control and the primary beam for inspection are controlled. COPYRIGHT: (C)2008,JPO&INPIT

    Abstract translation: 解决的问题：提供一种电子束施加装置，其能够在不降低生产量的同时实现电荷控制，同时保持用于检查的主光束的良好收敛。 解决方案：从单个电子源形成多个主光束，并且通过至少一个主光束控制样品的电荷，同时通过使用另一个主光束来进行样品的检查。 此外，在用于充电控制的主光束的照射区域和用于检查的一次光束的照射区域上独立地设置表面电场强度。 用于充电控制的主光束的电流以及充电控制的主光束和用于检查的主光束之间的间隔被控制。 版权所有（C）2008，JPO＆INPIT

    Charged particle beam apparatus
    2.
    发明专利
    Charged particle beam apparatus 审中-公开
    充电颗粒光束装置

    公开(公告)号：JP2007019244A

    公开(公告)日：2007-01-25

    申请号：JP2005198839

    申请日：2005-07-07

    Applicant: Canon Inc ,  Hitachi High-Technologies Corp ,  キヤノン株式会社 ,  株式会社日立ハイテクノロジーズ

    Inventor： SOMETA YASUHIRO ,  TANIMOTO AKIYOSHI

    IPC: H01L21/027 ,  G03F7/20 ,  H01J37/147 ,  H01J37/305

    Abstract: PROBLEM TO BE SOLVED: To provide a charged particle beam apparatus for preventing a charged particle beam from deteriorating by preventing aberration of a convergent charged particle lens from getting worse due to a fact that an optical axis of the charged particle beam toward a sample from a first deflection means and a second deflection means, and toward a charged particle source from the lens is not kept parallel to an optical axis of the lens, and to provide an exposure apparatus, and a device manufacturing method using the exposure apparatus.
    SOLUTION: The charged particle beam apparatus includes a shielding plate having an aperture for permitting a charged particle beam 10 deflected by the first deflection means and deflected by the second deflection means to pass, and charged particles lenses 7 and 8 for converging the charged particle beam passing through the shielding plate to be irradiated onto the sample. The optical axis of the charged particle beam toward the sample from the first and second deflection means and toward the charged particle source from the lens is kept parallel to the optical axis of the lens. Thus, deterioration of the charged particle beam is prevented by preventing the aberration of the convergent charged particle lens from getting worse due to a fact that the optical axis is not kept parallel to the optical axis of the convergent charged particle lens.
    COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种带电粒子束装置，用于通过防止收敛带电粒子透镜的像差变差而使带电粒子束劣化，这是由于带电粒子束的光轴朝向 来自第一偏转装置和第二偏转装置的样本以及从透镜朝向带电粒子源的样本不保持与透镜的光轴平行，并且提供曝光装置，以及使用该曝光装置的装置制造方法。 解决方案：带电粒子束装置包括一个屏蔽板，该屏蔽板具有用于允许由第一偏转装置偏转并被第二偏转装置偏转的带电粒子束10通过的带孔粒子束10，并且带电粒子透镜7和8用于会聚 带电粒子束通过屏蔽板照射到样品上。 从第一和第二偏转装置朝向样本的带电粒子束的光轴和从透镜朝向带电粒子源的光轴保持与透镜的光轴平行。 因此，由于光轴不保持与收敛带电粒子透镜的光轴平行的事实，因此通过防止会聚带电粒子透镜的像差变差而防止带电粒子束的劣化。 版权所有（C）2007，JPO＆INPIT

    Inspection system
    5.
    发明专利
    Inspection system 审中-公开
    检查系统

    公开(公告)号：JP2011247709A

    公开(公告)日：2011-12-08

    申请号：JP2010120220

    申请日：2010-05-26

    Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

    Inventor： KANDORI AKIHIKO ,  OGATA KUNIOMI ,  KAWABATA RYUZO ,  MIZOGUCHI TAKAKO ,  TSUKAMOTO AKIRA ,  TANIMOTO AKIYOSHI ,  MIWA TOSHIHARU ,  ITABASHI TAKEYUKI ,  SEKI YUSUKE ,  TANAKA SEIYA ,  AOKI YASUKO

    IPC: G01V3/11

    CPC classification number: G01V3/104 ,  G01N27/72

    Abstract: PROBLEM TO BE SOLVED: To detect a metal foreign substance mixed in an object to be inspected which is a sheet-like magnetic material at high speed and with high accuracy.SOLUTION: The present invention relates to an inspection system 1a which inspects whether or not the metal foreign substance is mixed in a material 111 to be inspected which is the sheet-like magnetic material, the material 111 to be inspected with a possibility of containing the metal foreign substance is magnetized, after that, a magnetic field with intensity for canceling magnetization of the material 111 to be inspected is applied to the material 111 to be inspected, difference processing is performed to magnetic signals detected by a plurality of magnetic sensors 130 to determine whether or not the metal foreign substance is mixed in the material 111 to be inspected based on a result of the difference processing.

    Abstract translation: 要解决的问题：以高速和高精度检测混合在作为片状磁性材料的待检查对象物中的金属异物。 检测系统本发明涉及一种检查系统1a，其检查金属异物是否被混合在待检查的材料111中，片状磁性材料，待检查的材料111具有可能性 含有金属异物被磁化后，将要检查的材料111的磁化强度的磁场施加到要检查的材料111，对由多个磁性检测的磁信号进行差分处理 传感器130，用于基于差异处理的结果来确定金属异物是否被混合在要检查的材料111中。 版权所有（C）2012，JPO＆INPIT

    Charged particle beam apparatus and its control method
    6.
    发明专利
    Charged particle beam apparatus and its control method 有权
    充电颗粒光束装置及其控制方法

    公开(公告)号：JP2009026742A

    公开(公告)日：2009-02-05

    申请号：JP2008109502

    申请日：2008-04-18

    Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

    Inventor： FUKUDA MUNEYUKI ,  YAMANASHI HIROMASA ,  TANIMOTO AKIYOSHI ,  HAYATA YASUNARI ,  NASU OSAMU

    IPC: H01J37/28 ,  G01R31/302 ,  H01L21/66

    CPC classification number: H01J37/28 ,  H01J37/026 ,  H01J37/265 ,  H01J2237/24564

    Abstract: PROBLEM TO BE SOLVED: To set a retarding voltage to be an appropriate value by accurately estimating a potential distribution of a wafer due to electrostatic charge.
    SOLUTION: A potential at a plurality of points along the diameter of a semiconductor wafer 13 is actually measured. The electric potential between actually-measured points adjoining each other in radial direction is spline-interpolated, to acquire a potential distribution across the diameter. Then, the electric potential between the points adjoining in circumferential direction with the center of the semiconductor wafer 13 as a center is spline-interpolated, to acquire a two-dimensional interpolation function about the potential distribution in the semiconductor wafer 13. Then, a coordinate value of a measurement point on the semiconductor wafer is assigned to the two-dimensional interpolation function to acquire the potential at the measurement point.
    COPYRIGHT: (C)2009,JPO&INPIT

    Abstract translation: 要解决的问题：通过精确估计由静电引起的晶片的电位分布，将延迟电压设定为适当的值。 解决方案：实际上测量沿着半导体晶片13的直径的多个点处的电位。 在径向上彼此相邻的实测点之间的电位被样条插值，以获得跨越直径的电位分布。 然后，将以圆周方向相邻的点与半导体晶片13的中心为中心的电位进行样条插值，得到关于半导体晶片13的电位分布的二维内插函数。然后， 将半导体晶片上的测量点的值分配给二维插值函数以获取测量点处的电位。 版权所有（C）2009，JPO＆INPIT

    Charged particle beam application device
    7.
    发明专利
    Charged particle beam application device 有权
    充电颗粒光束应用器件

    公开(公告)号：JP2007317467A

    公开(公告)日：2007-12-06

    申请号：JP2006144934

    申请日：2006-05-25

    Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

    Inventor： TANIMOTO AKIYOSHI ,  KAMIMURA OSAMU ,  HAYATA YASUNARI ,  OTA HIROYA

    IPC: H01J37/28 ,  H01L21/66

    CPC classification number: H01J37/153 ,  H01J37/265 ,  H01J37/28 ,  H01J2237/1205 ,  H01J2237/1534 ,  H01J2237/1536 ,  H01J2237/2446 ,  H01J2237/2448 ,  H01J2237/24592 ,  H02N13/00

    Abstract: PROBLEM TO BE SOLVED: To provide a charged particle beam application device, capable of attaining both reduction of off-axis aberrations and separation detection of secondary beams.
    SOLUTION: The charged particle beam application device, provided with an electro-optical system forming a plurality of primary charged particle beams, projecting them on a sample 117, and scanning them on a sample by a first deflector 115; a plurality of detectors 124a, 124b, 124c individually detecting a plurality of secondary charged particle beams 120, generated from a plurality of places of the sample due to irradiation of the plurality of primary charged particle beams; and a power source impressing voltage on the sample, is further provided with a Wien filter, separating the path of the primary charged particle beams from that of the secondary charged particle beams, a second deflector 123 deflecting the secondary charged particle beams separated by the Wien filter 113, and a control means for controlling the synchronization of the first deflector and the second deflector. The plurality of detectors individually detect the plurality of charged particle beams separated by the Wien filter.
    COPYRIGHT: (C)2008,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种能够实现离轴像差的减少和二次束的分离检测的带电粒子束施加装置。 解决方案：带电粒子束施加装置，其具有形成多个初级带电粒子束的电光系统，将其投射在样品117上，并通过第一偏转器115将其扫描在样品上; 多个检测器124a，124b，124c，其分别检测由于多个初级带电粒子束的照射而从样品的多个位置产生的多个次级带电粒子束120; 并且在样品上施加电压的电源进一步设置有维恩滤波器，将初级带电粒子束的路径与二次带电粒子束的路径分开;偏转由维恩分离的二次带电粒子束的第二偏转器123 过滤器113，以及用于控制第一偏转器和第二偏转器的同步的控制装置。 多个检测器分别检测由维恩滤波器分离的多个带电粒子束。 版权所有（C）2008，JPO＆INPIT

    Deflector, charged beam aligner and process for fabricating device
    8.
    发明专利
    Deflector, charged beam aligner and process for fabricating device 审中-公开
    偏转器，充电光束对准器和制造器件的工艺

    公开(公告)号：JP2007019250A

    公开(公告)日：2007-01-25

    申请号：JP2005198845

    申请日：2005-07-07

    Applicant: Canon Inc ,  Hitachi High-Technologies Corp ,  キヤノン株式会社 ,  株式会社日立ハイテクノロジーズ

    Inventor： OSANAGA KENICHI ,  TANIMOTO AKIYOSHI

    IPC: H01L21/027 ,  G03F7/20

    Abstract: PROBLEM TO BE SOLVED: To provide a deflector for exposing a wafer precisely by reducing the impact of a charged particle beam on the insulating film of a deflector, and to provide a charged particle beam aligner having the deflector and a process for fabricating a device using that charged particle beam aligner.
    SOLUTION: The deflector of a charged particle beam aligner comprises an opening formed in a substrate and passing a charged particle beam, at least two electrodes arranged oppositely to each other around the opening, and an insulating film interposed between the substrate and the electrode in order to insulate them electrically. Since a potential applied to the electrode is controlled on the basis of the charging potential by a charged particle beam on the insulating film and the charged particle beam is deflected, impact of the charged particle beam on the insulating film of the deflector is reduced and a wafer is exposed precisely. A charged particle beam aligner having that deflector and a process for fabricating a device using that charged particle beam aligner are also provided.
    COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种用于通过减少带电粒子束对偏转器的绝缘膜的冲击而精确地暴露晶片的偏转器，并且提供具有偏转器的带电粒子束对准器和制造工艺 使用该带电粒子束对准器的装置。 解决方案：带电粒子束对准器的偏转器包括形成在基板中并通过带电粒子束的开口，围绕开口彼此相对布置的至少两个电极，以及插入在基板和基板之间的绝缘膜 电极以使其电绝缘。 由于基于绝缘膜上的带电粒子束的充电电位来控制施加到电极的电位，并且带电粒子束被偏转，所以带电粒子束对偏转器的绝缘膜的冲击减小，并且 晶片被精确地曝光。 还提供了具有该偏转器的带电粒子束对准器和使用该带电粒子束对准器制造器件的工艺。 版权所有（C）2007，JPO＆INPIT

    Electrostatic lens, aligner, and process for fabricating device
    9.
    发明专利
    Electrostatic lens, aligner, and process for fabricating device 有权
    静电镜，对准器和制造工艺

    公开(公告)号：JP2007019194A

    公开(公告)日：2007-01-25

    申请号：JP2005198093

    申请日：2005-07-06

    Applicant: Canon Inc ,  Hitachi High-Technologies Corp ,  キヤノン株式会社 ,  株式会社日立ハイテクノロジーズ

    Inventor： HOSODA MAKI ,  TANIMOTO AKIYOSHI

    IPC: H01L21/027 ,  G03F7/20 ,  H01J37/305

    Abstract: PROBLEM TO BE SOLVED: To fabricate a high precision device while reducing optical aberration without requiring a complex mechanism. SOLUTION: The electrostatic lens comprises a plurality of electrode substrates 401-403 each having openings arranged in a plane perpendicular to the optical axis, and marks 404-406 for defining a direction dependent on the arrangement of the openings wherein the plurality of electrode substrates are assembled based on the direction defined by the marks 404-406. COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题：在不需要复杂机构的同时减少光学像差的同时制造高精度器件。 解决方案：静电透镜包括多个电极基板401-403，每个电极基板具有布置在垂直于光轴的平面中的开口，以及用于限定取决于开口的布置的方向的标记404-406，其中多个 基于由标记404-406限定的方向组装电极基板。 版权所有（C）2007，JPO＆INPIT

    Lithography method and charged-particle-beam lithograph system
    10.
    发明专利
    Lithography method and charged-particle-beam lithograph system 有权
    LITHOGRAPHY方法和充电粒子光栅系统

    公开(公告)号：JP2005116743A

    公开(公告)日：2005-04-28

    申请号：JP2003348354

    申请日：2003-10-07

    Applicant: Canon Inc ,  Hitachi High-Technologies Corp ,  キヤノン株式会社 ,  株式会社日立ハイテクノロジーズ

    Inventor： TANIMOTO AKIYOSHI ,  HAYATA YASUNARI ,  NAKAYAMA YOSHINORI ,  KAMIMURA OSAMU ,  YODA HARUO ,  HOSODA MAKI

    IPC: G21K5/04 ,  G03F7/20 ,  H01J37/04 ,  H01J37/09 ,  H01J37/305 ,  H01J37/317 ,  H01L21/027

    CPC classification number: H01J37/3177 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/04 ,  H01J37/317

    Abstract: PROBLEM TO BE SOLVED: To provide charged-particle-beam lithography technology for permitting drawing process without changing a multi-beam forming element and without deteriorating a drawing accuracy, even when electron beam having fault in characteristics thereof by the fault of the multi-beam forming element is generated. SOLUTION: The charged-particle-beam lithography system is provided with a plurality of charged-particle-beam forming means (101, 102, 103) arrayed with a predetermined interval; a plurality of blankers (107) acting on a plurality of charged-particle-beams individually; a common blanker (201) acting on all of the charged-particle-beams; and a blanking choke making the charged-particle-beam arrive and is provided with a predetermined deviation action by a plurality of blankers (107) on a specimen and intercepting the charged-particle-beam, which is not provided with the predetermined deviation action by the plurality of blankers (107) with respect to a sample, under a status with a signal not being impressed on the common blanker (201), to intercept a beam having faulty characteristics with respect to the sample and effect lithography employing only the beam having proper characteristics. COPYRIGHT: (C)2005,JPO&NCIPI

    Abstract translation: 要解决的问题：为了提供带电粒子束光刻技术，用于允许拉拔过程而不改变多光束形成元件，并且不降低绘图精度，即使当由于特征的故障的电子束由于 产生多光束形成元件。 电荷粒子束光刻系统设置有以预定间隔排列的多个带电粒子束形成装置（101,102,103）; 分别作用在多个带电粒子束上的多个阻挡件（107）; 作用在所有带电粒子束上的常见消隐器（201）; 并且使带电粒子束到达的消隐扼流器到达并且由样本上的多个消隐部件（107）提供预定的偏移动作，并截断未被提供预定偏移动作的带电粒子束 在具有信号不被施加在公共消隐器（201）上的状态下，相对于样品的多个消隐器（107）拦截相对于样品具有故障特征的光束，并且仅使用具有 适当的特点。 版权所有（C）2005，JPO＆NCIPI

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