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公开(公告)号：JP4028864B2
公开(公告)日：2007-12-26
申请号：JP2004289636
申请日：2004-10-01
Applicant: 株式会社日立製作所
Abstract: PROBLEM TO BE SOLVED: To realize the acceleration of an inspection in a device which inspects the defects of the same design patterns, foreign matter, residue or the like on a wafer in the manufacturing process of a semiconductor device with electron beams. SOLUTION: The electron beam (area beam) having a certain area on the surface of a semiconductor sample 7 is radiated, reflected electrons from the surface of the sample are imaged by an imaging lens 11, images of a plurality of areas on the surface of the semiconductor sample 7 are obtained and are stored in image memories 18, 19, and whether there are defects and the locations of the defects in the area are measured by comparing the stored images in a plurality of the areas. COPYRIGHT: (C)2005,JPO&NCIPI
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公开(公告)号：JP3534582B2
公开(公告)日：2004-06-07
申请号：JP26950097
申请日：1997-10-02
Applicant: 株式会社日立製作所
IPC: G01N23/20 , G01N23/225 , G01Q20/02 , G01Q30/02 , G01Q30/04 , G01Q30/20 , H01J37/26 , H01L21/027 , H01L21/66
CPC classification number: H01J37/26 , G01N23/225 , H01J37/244 , H01J37/29 , H01J2237/20228 , H01J2237/221 , H01J2237/2447 , H01J2237/24475 , H01J2237/24485 , H01J2237/24592 , H01J2237/2482
Abstract: An electron beam (area beam) having a fixed area is irradiated onto the surface of a semiconductor sample, and reflected electrons from the sample surface are imaged by the imaging lens, and images of a plurality of regions of the surface of the semiconductor sample are obtained and stored in the image storage unit, and the stored images of the plurality of regions are compared with each other, and the existence of a defect in the regions and the defect position are measured. By doing this, in an apparatus for testing a pattern defect of the same design, foreign substances, and residuals on a wafer in the manufacturing process of a semiconductor apparatus by an electron beam, speeding-up of the test can be realized.
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公开(公告)号：JP3791095B2
公开(公告)日：2006-06-28
申请号：JP4523497
申请日：1997-02-28
Applicant: 株式会社日立製作所
Inventor： 忠雄 伊野 , 晴夫 依田 , 俊二 前田 , 和士 吉村 , 博之 品田 , 康継 宇佐見 , 公明 安藤 , 高志 広井 , 勝也 杉山 , 有俊 杉本 , 麻紀 田中 , 裕介 矢島 , 仁志 窪田 , 遠山 博 , 真理 野副 , 金子 豊 , 敦子 高藤 , 勝廣 黒田
IPC: G01B15/00 , H01L21/66 , G01B15/08 , G01N23/225 , G01R31/302 , G02F1/136 , H01J37/20
Abstract: PROBLEM TO BE SOLVED: To provide a method of speedily, accurately and stably inspecting a circuit pattern having insulation materials by detecting defects, foreign matters, residue, and the like of the circuit pattern on the substrate of a semiconductor device or the like by irradiating the wafer with an electron beam and comparing the secondary electron image. SOLUTION: An electron beam image is formed before the electrical potential of the circuit pattern materials varies by speedily irradiating a wafer 9 to be inspected with an electron beam 19 of a large amount of current only once or several times. In addition to the first electron beam used to form the image inspected, a second changed particle beam 104 is projected onto the wafer 9 and the inspection is conducted after the electrical potential of the circuit pattern material is stabilized. An electron beam image of high S/N ratio and high quality can be effectively formed by digitizing the secondary electron inspection signal and transferring the digital signal. The method and the inspecting instrument make it possible to inspect the circuit pattern having insulation materials, detect defects and abnormality generated during manufacturing process of various types of wafers such as for a semiconductor device, which are conventionally undetectable by a prior technology, lower the fraction defective, and improve the reliability of the manufacturing process of a wafer.
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公开(公告)号：JP4274247B2
公开(公告)日：2009-06-03
申请号：JP2007000916
申请日：2007-01-09
Applicant: 株式会社日立製作所
Inventor： 忠雄 伊野 , 晴夫 依田 , 俊二 前田 , 和士 吉村 , 博之 品田 , 康継 宇佐見 , 公明 安藤 , 高志 広井 , 勝也 杉山 , 有俊 杉本 , 麻紀 田中 , 裕介 矢島 , 仁志 窪田 , 遠山 博 , 真理 野副 , 金子 豊 , 敦子 高藤 , 勝廣 黒田
IPC: H01J37/28 , G01N23/225 , H01J37/20 , H01L21/66
Abstract: PROBLEM TO BE SOLVED: To rapidly, stably, and accurately inspect a circuit pattern with an insulating material in an inspection method for comparing the secondary electron images of the defects, foreign matter, and residues of the circuit pattern produced on a substrate of a semiconductor device. SOLUTION: In this circuit pattern inspection method, an electron beam image is formed on a substrate 9 to be inspected before the potential of the member of the circuit pattern is varied by radiating a heavy-current electron beam 19 onto the substrate 9 at a high speed. Before the inspection, the substrate 9 is radiated with a second charged particle beam 104 in addition to the first electron beam for forming an image for inspection to stabilize the potential of the member. Also, secondary electron detection signals are digitized before transfer to acquire high quality electron beam images with high efficiency and high SN ratio. By this inspection method, the circuit pattern with the insulating material can be inspected. Since those defects and abnormalities that cannot be detected by the prior art produced in various substrate manufacturing processes such as the semiconductor device can be found, the fraction defective in the substrate manufacturing processes can be reduced and the reliability can be enhanced. COPYRIGHT: (C)2007,JPO&INPIT
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