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公开(公告)号：JP3534582B2
公开(公告)日：2004-06-07
申请号：JP26950097
申请日：1997-10-02
Applicant: 株式会社日立製作所
IPC: G01N23/20 , G01N23/225 , G01Q20/02 , G01Q30/02 , G01Q30/04 , G01Q30/20 , H01J37/26 , H01L21/027 , H01L21/66
CPC classification number: H01J37/26 , G01N23/225 , H01J37/244 , H01J37/29 , H01J2237/20228 , H01J2237/221 , H01J2237/2447 , H01J2237/24475 , H01J2237/24485 , H01J2237/24592 , H01J2237/2482
Abstract: An electron beam (area beam) having a fixed area is irradiated onto the surface of a semiconductor sample, and reflected electrons from the sample surface are imaged by the imaging lens, and images of a plurality of regions of the surface of the semiconductor sample are obtained and stored in the image storage unit, and the stored images of the plurality of regions are compared with each other, and the existence of a defect in the regions and the defect position are measured. By doing this, in an apparatus for testing a pattern defect of the same design, foreign substances, and residuals on a wafer in the manufacturing process of a semiconductor apparatus by an electron beam, speeding-up of the test can be realized.
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公开(公告)号：JP3791095B2
公开(公告)日：2006-06-28
申请号：JP4523497
申请日：1997-02-28
Applicant: 株式会社日立製作所
Inventor： 忠雄 伊野 , 晴夫 依田 , 俊二 前田 , 和士 吉村 , 博之 品田 , 康継 宇佐見 , 公明 安藤 , 高志 広井 , 勝也 杉山 , 有俊 杉本 , 麻紀 田中 , 裕介 矢島 , 仁志 窪田 , 遠山 博 , 真理 野副 , 金子 豊 , 敦子 高藤 , 勝廣 黒田
IPC: G01B15/00 , H01L21/66 , G01B15/08 , G01N23/225 , G01R31/302 , G02F1/136 , H01J37/20
Abstract: PROBLEM TO BE SOLVED: To provide a method of speedily, accurately and stably inspecting a circuit pattern having insulation materials by detecting defects, foreign matters, residue, and the like of the circuit pattern on the substrate of a semiconductor device or the like by irradiating the wafer with an electron beam and comparing the secondary electron image. SOLUTION: An electron beam image is formed before the electrical potential of the circuit pattern materials varies by speedily irradiating a wafer 9 to be inspected with an electron beam 19 of a large amount of current only once or several times. In addition to the first electron beam used to form the image inspected, a second changed particle beam 104 is projected onto the wafer 9 and the inspection is conducted after the electrical potential of the circuit pattern material is stabilized. An electron beam image of high S/N ratio and high quality can be effectively formed by digitizing the secondary electron inspection signal and transferring the digital signal. The method and the inspecting instrument make it possible to inspect the circuit pattern having insulation materials, detect defects and abnormality generated during manufacturing process of various types of wafers such as for a semiconductor device, which are conventionally undetectable by a prior technology, lower the fraction defective, and improve the reliability of the manufacturing process of a wafer.
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公开(公告)号：JP4548537B2
公开(公告)日：2010-09-22
申请号：JP2008269292
申请日：2008-10-20
Applicant: 株式会社日立製作所
IPC: G01N23/225 , H01J37/28
Abstract: PROBLEM TO BE SOLVED: To provide an inspection method and device using electron beam in which inspection can be made at a higher speed. SOLUTION: Electron beam generated by an electron beam source is focused on a test piece by an object lens, and the test piece is scanned by the electron beam, and the electron bean is deflected so that a charged particle can be generated from the test piece, and the test piece is moved continuously while scanning and a focusing distance of the object lens is rectified by measuring a height of the test piece while the test piece is moving, and the charged particle generated from the test piece is detected from between the object lens and the test piece by a charged particle detecting unit and is converted into an electric signal, and the electric signal is memorized as an image signal and an image comparison is conducted by using the memorized image signal and a test piece defect is detected. COPYRIGHT: (C)2009,JPO&INPIT
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公开(公告)号：JP4274247B2
公开(公告)日：2009-06-03
申请号：JP2007000916
申请日：2007-01-09
Applicant: 株式会社日立製作所
Inventor： 忠雄 伊野 , 晴夫 依田 , 俊二 前田 , 和士 吉村 , 博之 品田 , 康継 宇佐見 , 公明 安藤 , 高志 広井 , 勝也 杉山 , 有俊 杉本 , 麻紀 田中 , 裕介 矢島 , 仁志 窪田 , 遠山 博 , 真理 野副 , 金子 豊 , 敦子 高藤 , 勝廣 黒田
IPC: H01J37/28 , G01N23/225 , H01J37/20 , H01L21/66
Abstract: PROBLEM TO BE SOLVED: To rapidly, stably, and accurately inspect a circuit pattern with an insulating material in an inspection method for comparing the secondary electron images of the defects, foreign matter, and residues of the circuit pattern produced on a substrate of a semiconductor device. SOLUTION: In this circuit pattern inspection method, an electron beam image is formed on a substrate 9 to be inspected before the potential of the member of the circuit pattern is varied by radiating a heavy-current electron beam 19 onto the substrate 9 at a high speed. Before the inspection, the substrate 9 is radiated with a second charged particle beam 104 in addition to the first electron beam for forming an image for inspection to stabilize the potential of the member. Also, secondary electron detection signals are digitized before transfer to acquire high quality electron beam images with high efficiency and high SN ratio. By this inspection method, the circuit pattern with the insulating material can be inspected. Since those defects and abnormalities that cannot be detected by the prior art produced in various substrate manufacturing processes such as the semiconductor device can be found, the fraction defective in the substrate manufacturing processes can be reduced and the reliability can be enhanced. COPYRIGHT: (C)2007,JPO&INPIT
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公开(公告)号：JP3564958B2
公开(公告)日：2004-09-15
申请号：JP21290897
申请日：1997-08-07
Applicant: 株式会社日立製作所
Inventor： 敦子 ▲高▼藤 , 貢 佐藤 , 博之 品田 , 康継 宇佐美 , 裕子 岩淵 , 幹雄 市橋 , 秀男 戸所 , 勝也 杉山 , 弘義 森 , 悟 福原 , 博 遠山 , 豊 金子
IPC: G01Q30/02 , G01N23/00 , G01N23/20 , G01N23/225 , G21K1/08 , G21K7/00 , H01J37/22 , H01J37/244 , H01J37/256 , H01J37/28 , H01L21/66
CPC classification number: H01J37/28 , G01N23/20 , G01N23/2251 , G03F7/7065 , G06T7/001 , G06T2207/10056 , G06T2207/30148 , H01J37/04 , H01J37/20 , H01J37/265 , H01J2237/04756 , H01J2237/20221 , H01J2237/2444 , H01J2237/24592 , H01J2237/2817 , H01J2237/31766
Abstract: Problems encountered in the conventional inspection method and the conventional apparatus adopting the method are solved by the present invention using an electron beam by providing a novel inspection method and an inspection apparatus adopting the novel method which are capable of increasing the speed to scan a specimen such as a semiconductor wafer. The inspection novel method provided by the present invention comprises the steps of: generating an electron beam; converging the generated electron beam on a specimen by using an objective lens; scanning the specimen by using the converged electron beam; continuously moving the specimen during scanning; detecting charged particles emanating from the specimen at a location between the specimen and the objective lens and converting the detected charged particles into an electrical signal; storing picture information conveyed by the electrical signal; comparing a picture with another by using the stored picture information; and detecting a defect of the specimen.
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Patent Agency Ranking
公开(公告)号：JP4853581B2
公开(公告)日：2012-01-11
申请号：JP2010179920
申请日：2010-08-11
Applicant: 株式会社日立製作所
IPC: G01N23/225 , H01J37/244 , H01J37/28 , H01L21/66
Abstract: PROBLEM TO BE SOLVED: To provide an inspection method and device, capable of performing the inspection at a higher speed, using an electron beam. SOLUTION: An electron beam 36 from an electron gun 1 is converged by an objective lens 9 and decelerated by a retarding voltage impressed to a sample 13; the sample 13 is scanned by the electron beam, while being moved; secondary electrons 33 generated from the sample 13 are accelerated by the retarding voltage to make a nearly parallel beam which is deflected by an E×B deflector 18, arranged between the objective lens 9 and the sample 13 and has a secondary electron generating body 19 irradiated; and second secondary electrons 20 are generated from the secondary electron generating body 19, and second detected by a charged particle detector 21. The output signal detected is stored as an image signal, and the image stored is compared in an operation section 29 and a defect determining section 30 to thereby determine defects. COPYRIGHT: (C)2011,JPO&INPIT
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公开(公告)号：JP4702472B2
公开(公告)日：2011-06-15
申请号：JP2009174889
申请日：2009-07-28
Applicant: 株式会社日立製作所
IPC: G01N23/225 , H01J37/147 , H01J37/244 , H01J37/28 , H01J37/29 , H01L21/66
Abstract: PROBLEM TO BE SOLVED: To provide: an inspection method using an electron beam and capable of increasing the speed of inspection; and an inspection device. SOLUTION: An electron beam 36 from an electron gun 1 is converged by an objective lens 9, and decelerated by a retarding voltage applied to a sample 13; the sample 13 is scanned by the electron beam while moving; secondary electrons 33 generated from the sample 13 are accelerated by the retarding voltage, formed into a nearly parallel beam, deflected by an E×B deflector 18 arranged between the objective lens 9 and the sample 13 to irradiate a secondary electron generator 19; and second secondary electrons 20 are generated from the secondary electron generator 19 and detected by a charged particle detector 21. An output signal generated by the detection thereof is stored as an image signal, the stored image is compared in a calculation part 29 and a defect determination part 30, and a defect is determined. COPYRIGHT: (C)2010,JPO&INPIT
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公开(公告)号：JP4400614B2
公开(公告)日：2010-01-20
申请号：JP2006306116
申请日：2006-11-13
Applicant: 株式会社日立製作所
IPC: G01N23/225 , H01J37/28 , H01L21/66
Abstract: PROBLEM TO BE SOLVED: To provide an inspection method and an inspection device using an electron beam which increases speed of an inspection. SOLUTION: An electron beam generated at an electron source is converged to a sample by an objective lens, the sample is scanned by the electron beam, the electron beam is deflected to generated charged particles from the sample by above, and continuously displaced between the sample during the scanning, a height of the sample is measured during displacing and a focused distance of the objective lens is corrected, charged particles generated from the sample are detected by a charged particle detector between the objective lens and the sample and translated into an electrical signal, the electrical signal is memorized as an image signal, an image comparison is proceeded by using the memorized image signal, and then an error of the sample is detected. COPYRIGHT: (C)2007,JPO&INPIT
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公开(公告)号：JP4062196B2
公开(公告)日：2008-03-19
申请号：JP2003202164
申请日：2003-07-28
Applicant: 株式会社日立製作所
Inventor： 敦子 ▲高▼藤 , 貢 佐藤 , 博之 品田 , 康継 宇佐美 , 裕子 岩淵 , 幹雄 市橋 , 秀男 戸所 , 勝也 杉山 , 弘義 森 , 悟 福原 , 博 遠山 , 豊 金子
IPC: G01N23/225 , H01L21/66 , G01R31/302
Abstract: PROBLEM TO BE SOLVED: To provide an inspection method using electron beam which can speed up the inspection and an inspection device. SOLUTION: An electron beam 36 from an electron gun 1 is converged by an objective lens 9 and decelerated by the retarding voltage impressed to a sample 13. The sample 13 is scanned by the electron beam while moving, and the secondary electron 33 generated from the sample 13 is accelerated by the retarding voltage and becomes almost parallel beam. Then the beam is deflected by an E×B deflector 18 which is located between the objective lens 9 and the sample 13, and it irradiates a secondary electron generating body 19. A second secondary electron 20 generates from the secondary electron generating body 19, and is detected by a charged particle detector 21. The detected output signal is stored as a picture signal, and the stored picture is compared at an operation part 29 and a defect determining part 30 to determine the defect. COPYRIGHT: (C)2004,JPO
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公开(公告)号：JP4028864B2
公开(公告)日：2007-12-26
申请号：JP2004289636
申请日：2004-10-01
Applicant: 株式会社日立製作所
Abstract: PROBLEM TO BE SOLVED: To realize the acceleration of an inspection in a device which inspects the defects of the same design patterns, foreign matter, residue or the like on a wafer in the manufacturing process of a semiconductor device with electron beams. SOLUTION: The electron beam (area beam) having a certain area on the surface of a semiconductor sample 7 is radiated, reflected electrons from the surface of the sample are imaged by an imaging lens 11, images of a plurality of areas on the surface of the semiconductor sample 7 are obtained and are stored in image memories 18, 19, and whether there are defects and the locations of the defects in the area are measured by comparing the stored images in a plurality of the areas. COPYRIGHT: (C)2005,JPO&NCIPI
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