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公开(公告)号：JP5036889B2
公开(公告)日：2012-09-26
申请号：JP2011081487
申请日：2011-04-01
Applicant: 株式会社ルネサス東日本セミコンダクタ , 株式会社日立製作所
IPC: G01N23/225
Abstract: PROBLEM TO BE SOLVED: To provide an inspection device and method for observing, inspecting, and distinguishing inspected and detected surface irregularities, shape defects, contaminations, further, electrical defects, or the like, quickly and precisely using an identical device by applying white light, laser beams, or electron beams to a substrate surface having a circuit pattern in a semiconductor device, or the like, and automatically enabling move to a position to be observed, capture of an image, and classification. SOLUTION: When specifying the position to be observed on a sample and applying electron beams for forming an image, based on the position information of a defect inspected and detected by other inspection device, observation of electrical defects that can be conducted with a potential contract by designating electron beam irradiation conditions, detectors, detection conditions, and the like, according to the types of defects to be observed. The acquired images are automatically classified by an image processing section, and the results are added to a defect file to be output. COPYRIGHT: (C)2011,JPO&INPIT
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公开(公告)号：JP4250898B2
公开(公告)日：2009-04-08
申请号：JP2002045569
申请日：2002-02-22
Applicant: 株式会社日立製作所
IPC: G01N23/225 , G06T1/00 , G01N21/956 , G06T7/00 , H01L21/66
CPC classification number: G06T7/001 , G01N21/95684 , G06T2207/10056 , G06T2207/30148
Abstract: The present invention provides techniques, including a method and system, for inspecting for defects in a circuit pattern on a semi-conductor material. One specific embodiment provides a trial inspection threshold setup method, where the initial threshold is modified after a defect analysis of trial inspection stored data. The modified threshold is then used as the threshold in actual inspection.
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公开(公告)号：JP4035242B2
公开(公告)日：2008-01-16
申请号：JP34029798
申请日：1998-11-30
Applicant: 株式会社日立製作所
IPC: G01B11/24 , G01B11/245 , H01L21/66
Abstract: PROBLEM TO BE SOLVED: To improve the operational efficiency in setting various requirements necessary for inspection by shedding light to a substrate surface, detecting a generated signal for imaging, and comparing the image of a stored region, with a region formed with another same circuit pattern for determine a defect. SOLUTION: This apparatus 16 includes an inspection chamber 17, wherein the inside is evacuated and an auxiliary chamber 17 for carrying a substrate 24 to be inspected, and where the auxiliary chamber can be evacuated independently of the inspection chamber 17. The apparatus 16 includes, in addition, a control part 21 and an operation part 20, while the inside of the inspection chamber 17 roughly comprises an electronic optics system 18, a secondary electron detection part 35, a sample chamber 23, and an optical microscope 19. The operation part 20 comprises a first image storage 53, a second image storage 54, a comparative calculation part 55 and a defect determination processing part 56. An image display part 88 allows electron beam images captured into the first and second image storages 53, 54, optical images image picked up by a CCD camera 52, and differential images or the like after undergoing comparative processing by the comparative calculation part 55 to be optionally selected and displayed arbitrarily. Operation instructions and operating requirements for respective parts of the apparatus are input/output from the control part 21.
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公开(公告)号：JP4028864B2
公开(公告)日：2007-12-26
申请号：JP2004289636
申请日：2004-10-01
Applicant: 株式会社日立製作所
Abstract: PROBLEM TO BE SOLVED: To realize the acceleration of an inspection in a device which inspects the defects of the same design patterns, foreign matter, residue or the like on a wafer in the manufacturing process of a semiconductor device with electron beams. SOLUTION: The electron beam (area beam) having a certain area on the surface of a semiconductor sample 7 is radiated, reflected electrons from the surface of the sample are imaged by an imaging lens 11, images of a plurality of areas on the surface of the semiconductor sample 7 are obtained and are stored in image memories 18, 19, and whether there are defects and the locations of the defects in the area are measured by comparing the stored images in a plurality of the areas. COPYRIGHT: (C)2005,JPO&NCIPI
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Patent Agency Ranking
公开(公告)号：JP4015352B2
公开(公告)日：2007-11-28
申请号：JP2000276640
申请日：2000-09-07
Applicant: 株式会社日立製作所
IPC: G01N23/20 , H01L21/66 , G01N21/95 , G01N21/956 , G01N23/203 , G01N23/225 , G01N27/04 , G01N27/22 , G01R1/06 , G01R31/302 , G01R31/307 , G01R31/311 , G06T7/00 , H01J37/22 , H01J37/26 , H01J37/28 , H01L31/0336
CPC classification number: G01N23/203 , G01N21/9501 , G01N23/225 , G01N2021/95615 , G01R31/307 , G01R31/311 , G06T7/001 , G06T2207/30148 , H01J37/268 , H01J37/28 , H01J2237/2817
Abstract: Secondary electrons and back scattered electrons generated by irradiating a wafer to be inspected such as a semiconductor wafer with a charged particle beam are detected by a detector. A signal proportional to the number of detected electrons is generated, and an inspection image is formed on the basis of the signal. On the other hand, in consideration of a current value and irradiation energy of a charged particle beam, an electric field on the surface of the inspection wafer, emission efficiency of the secondary electrons and back scattered electrons, and the like, an electric resistance and an electric capacitance are determined so as to coincide with those in the inspection image. In a state where a difference between a resistance value in a normal portion and a resistance value in a defective portion is sufficiently increased by using the charging generated by the irradiation of electron beams, an inspection is conducted to thereby detect a defect.
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公开(公告)号：JP3665194B2
公开(公告)日：2005-06-29
申请号：JP32638097
申请日：1997-11-27
Applicant: 株式会社日立製作所
IPC: G01N23/225 , G01N21/88 , G01N21/956 , G01R31/302 , H01L21/66
Abstract: PROBLEM TO BE SOLVED: To provide a method and an apparatus in which the contents of a detected defect part can be detected at high speed and with high accuracy, without increasing the inspection time of the defect content. SOLUTION: Electron-beam images in a first region, a second region and a third region which comprise mutually identical design patterns on the surface of a substrate 9 to be inspected are acquired sequentially so as to be stored temporarily in a first image storage part 46, a second image storage part 47 and a third image storage part 48. Stored image data on the first region and the second region are compared and computed by a comparison and computing part 50. When the difference between both image data is larger than a prescribed value, a defect judgment and processing part 51 judges that any one of both regions contains a pattern defect, and both image data are sent to a fourth image storage part 49 so as to be stored and retained. Then, stored image data on the second region and the third region are compared and computed by the comparison and computing part 50. When the difference between both image data is larger than a prescribed value, the defect judgment and processing part 51 decides and judges that a pattern defect exists truly in the second region.
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公开(公告)号：JP4745380B2
公开(公告)日：2011-08-10
申请号：JP2008332085
申请日：2008-12-26
Applicant: 株式会社ルネサス東日本セミコンダクタ , 株式会社日立製作所
IPC: G01N23/225 , H01L21/66
Abstract: PROBLEM TO BE SOLVED: To provide an inspection device and method for observing, inspecting, and distinguishing inspected and detected surface irregularities, shape defects, foreign matters, further, electrical defects, or the like, quickly and precisely using an identical device by applying white light, laser beams, and electron beams to a substrate surface having a circuit pattern in a semiconductor device, or the like, and to move to a position to be observed, to capture an image, and to automatically perform classification. SOLUTION: When specifying the position to be observed on a sample and applying electron beams for forming an image, based on the position information of a defect inspected and detected by other inspection apparatus, observation of electrical defects that can be conducted with a potential contract by designating electron beam irradiation conditions, detectors, detection conditions, and the like, according to the types of defects to be observed. The acquired images are automatically classified by an image processing section, and the results are added to a defect file to output. COPYRIGHT: (C)2009,JPO&INPIT
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公开(公告)号：JP4312910B2
公开(公告)日：2009-08-12
申请号：JP34309499
申请日：1999-12-02
Applicant: 株式会社ルネサス東日本セミコンダクタ , 株式会社日立製作所
IPC: G01N23/225 , G01Q30/02 , G01N21/956 , G01N23/20 , G01Q30/04 , G01Q30/20 , G01R1/06 , G01R31/302 , H01L21/027 , H01L21/66
CPC classification number: G06T7/0004 , G01N23/20 , G06T2207/30148 , H01J2237/2487 , H01J2237/2817
Abstract: A pattern inspection system for inspecting a substrate surface on which a predetermined pattern is formed with radiation of an electron beam and an optical beam. the pattern inspection system includes a radiation and which radiates an electron beam to the substrate, a detection unit which detects a secondarily generated signal attributable to the radiation of the electron beam, a retrieval unit which retrieves an image from the signal detected by the detection unit, and an image processing unit which classifies the retrieved image depending on a type of the image.
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