公开(公告)号：JP2014116292A

公开(公告)日：2014-06-26

申请号：JP2013228112

申请日：2013-11-01

Applicant: Hitachi High-Tech Science Corp ,  株式会社日立ハイテクサイエンス

Inventor： UEMOTO ATSUSHI ,  MITSU KIN ,  ASAHATA TATSUYA

IPC: H01J37/317 ,  H01J37/252

CPC classification number: H01J37/265 ,  G01N1/32 ,  G01N23/04 ,  G01N23/2208 ,  G01N23/225 ,  G01N23/2251 ,  G01N23/2255 ,  G01T1/36 ,  H01J37/28 ,  H01J37/3005 ,  H01J37/304 ,  H01J37/3045 ,  H01J2237/2611 ,  H01J2237/28 ,  H01J2237/2807 ,  H01J2237/2812 ,  H01J2237/30472 ,  H01J2237/30483 ,  H01J2237/31745 ,  H01J2237/31749

Abstract: PROBLEM TO BE SOLVED: To acquire a cross section observation image having excellent efficiency in a sample including a fine observation object.SOLUTION: A cross section processing observation method comprises the steps of: performing ESD measurement of a cross section; when an X ray of a specific substance or a nonspecific substance rather than the specific substance is detected, changing an irradiation condition of an ion beam for acquiring a plurality of observation images of the cross section of the substance; and performing cross section processing observation of the substance.

Abstract translation: 要解决的问题：获取包括精细观察对象的样品具有优异效率的横截面观察图像。解决方案：横截面处理观察方法包括以下步骤：执行横截面的ESD测量; 当检测到特定物质或非特异性物质的X射线而不是特定物质时，改变用于获取物质横截面的多个观察图像的离子束的照射条件; 并进行物质的截面处理观察。

公开(公告)号：JP2014063726A

公开(公告)日：2014-04-10

申请号：JP2013174802

申请日：2013-08-26

Applicant: Hitachi High-Tech Science Corp ,  株式会社日立ハイテクサイエンス

Inventor： TORIKAWA SHOTA ,  ASAHATA TATSUYA ,  SUZUKI HIDEKAZU

IPC: H01J37/317 ,  G01N1/28 ,  H01J37/20 ,  H01J37/28

CPC classification number: H01J37/3005 ,  H01J37/02 ,  H01J37/20 ,  H01J37/28 ,  H01J2237/20207 ,  H01J2237/28 ,  H01J2237/3174 ,  H01J2237/31745 ,  H01J2237/31749

Abstract: PROBLEM TO BE SOLVED: To suppress a curtain effect accompanying a finishing processing and acquire a less-striped observation image formed by ion beam processing, even when thinning a sample having a structure such as a semiconductor device.SOLUTION: A composite charged particle beam device comprises: an FIB (Focused Ion Beam) lens barrel 1 irradiating a thin sample 7 with an FIB 1b; a GIB (Gas Ion Beam) lens barrel 3 irradiating with a GIB 3b; a sample table 5 for mounting the thin sample 7; first inclination means inclining the thin sample 7 around a first inclination axis 8a of the sample table 5 that exists in a plane of a first surface 21 orthogonal to an FIB irradiation axis 1a and formed by the FIB irradiation axis 1a and a GIB irradiation axis 3a; and second inclination means inclining the thin sample 7 around an axis orthogonal to the FIB irradiation axis 1a and the first inclination axis 8a.

Abstract translation: 要解决的问题：为了抑制伴随精加工的帘式效果，并且即使在使具有半导体装置的结构的样品变薄时，也能获得由离子束处理形成的较小条纹的观察图像。解决方案：复合带电粒子束装置 包括：用FIB 1b照射薄样品7的FIB（聚焦离子束）镜筒1; 用GIB 3b照射的GIB（气体离子束）镜筒3; 用于安装薄样品7的样品台5; 第一倾斜装置使薄样品7围绕存在于与FIB照射轴1a正交并由FIB照射轴1a形成的第一表面21的平面中的样品台5的第一倾斜轴8a和GIB照射轴3a ; 并且第二倾斜装置使薄样品7围绕与FIB照射轴线1a和第一倾斜轴线8a正交的轴线倾斜。

公开(公告)号：JP2014186896A

公开(公告)日：2014-10-02

申请号：JP2013061671

申请日：2013-03-25

Applicant: Hitachi High-Tech Science Corp ,  株式会社日立ハイテクサイエンス

Inventor： ASAHATA TATSUYA ,  TORIKAWA SHOTA

IPC: H01J37/317 ,  G01N1/28

CPC classification number: H01J37/3056 ,  H01J37/3005 ,  H01J2237/30466 ,  H01J2237/31749

Abstract: PROBLEM TO BE SOLVED: To provide a convergent ion beam device capable of accurately controlling the thickness of a flake portion when processing a specimen including the flake portion.SOLUTION: The convergent ion beam device comprises: a convergent ion beam irradiation mechanism for irradiating a specimen on which a protective film 3 is formed with convergent ion beams 20A from an upper side of the specimen; processing control means for completing a flake portion 2a by removing both sides of a region of the specimen to be the flake portion with convergent ion beams and successively forming observation surfaces 2b and 2c in parallel with an irradiation direction of convergent ion beams; and observation surface image generation means for acquiring images of the observation surfaces. The processing control means finishes the removal of the specimen when a height (h) of the protective film in the observation surface images in the irradiation direction of convergent ion beams becomes equal to or less than a predetermined threshold value hx.

Abstract translation: 要解决的问题：提供一种收敛离子束装置，其能够在处理包括片状部分的试样时精确地控制片状部分的厚度。解决方案：会聚离子束装置包括：会聚离子束照射机构，用于照射样品 保护膜3从样本的上侧形成有会聚离子束20A; 处理控制装置，用于通过用会聚离子束去除作为薄片部分的试样的区域的两侧，并且与会聚离子束的照射方向平行地依次形成观察表面2b和2c来完成薄片部分2a; 以及用于获取观察表面的图像的观察表面图像生成装置。 当会聚离子束的照射方向上的观察表面图像中的保护膜的高度（h）变为等于或小于预定阈值hx时，处理控制装置完成样品的去除。

公开(公告)号：JP2013200987A

公开(公告)日：2013-10-03

申请号：JP2012068022

申请日：2012-03-23

Applicant: Hitachi High-Tech Science Corp ,  株式会社日立ハイテクサイエンス

Inventor： SATO MAKOTO ,  ASAHATA TATSUYA ,  SUZUKI HIDEKAZU

IPC: H01J37/317 ,  H01J37/22 ,  H01J37/28

CPC classification number: H01J37/261 ,  H01J37/304 ,  H01J37/3056 ,  H01J2237/221 ,  H01J2237/30466

Abstract: PROBLEM TO BE SOLVED: To realize an automatic cross-section processing and observation apparatus which finishes cross-section processing and observation when a desired observation target is exposed in a cross-section.SOLUTION: The cross-section processing and observation apparatus includes a control portion 11 for repeatedly executing a process including slice processing by an ion beam 9 and acquisition of a SIM image by secondary electrons emitted from a cross-section formed by the processing. The control portion 11 divides an observation image into a plurality of areas, and finishes the process when a change has occurred between an image in one area of the plurality of areas and an image in an area, which corresponds to the one area, of an observation image of another cross-section acquired by the process.

Abstract translation: 要解决的问题：实现当期望的观察目标在横截面中暴露时完成横截面处理和观察的自动横截面处理和观察装置。解决方案：横截面处理和观察装置包括控制 用于重复执行包括离子束9的切片处理和通过由该处理形成的横截面发射的二次电子获取SIM图像的处理的部分11。 控制部分11将观察图像划分成多个区域，并且当在多个区域中的一个区域中的图像与对应于一个区域的区域中的图像之间发生改变时完成处理 通过该过程获得的另一横截面的观察图像。

公开(公告)号：JP2015050069A

公开(公告)日：2015-03-16

申请号：JP2013181523

申请日：2013-09-02

Applicant: 株式会社日立ハイテクサイエンス ,  Hitachi High-Tech Science Corp

Inventor： MITSU KIN ,  ASAHATA TATSUYA ,  UEMOTO ATSUSHI

IPC: H01J37/317 ,  H01J37/20 ,  H01J37/28

CPC classification number: H01J37/317 ,  H01J37/20 ,  H01J37/244 ,  H01J37/252 ,  H01J37/3056 ,  H01J2237/20214 ,  H01J2237/2067 ,  H01J2237/2445 ,  H01J2237/24585 ,  H01J2237/25 ,  H01J2237/2555 ,  H01J2237/2561

Abstract: 【課題】試料の表面におけるダメージ層の形成を抑制することが可能な荷電粒子ビーム装置を提供すること。【解決手段】第一照射軸を有する電子ビームを試料に照射する電子ビーム照射部と、前記試料を保持可能であり、前記第一照射軸に対して直交する方向に回転軸を有する回転ステージと、前記回転軸に平行な第二照射軸を有するイオンビームを前記試料に照射するイオンビーム照射部と、前記イオンビーム及び前記電子ビームの照射によって前記試料を介して生じる荷電粒子及び光のうち少なくとも一方を検出する検出部と、前記試料に気体イオンビームを照射する気体イオンビーム照射部とを備える。【選択図】図1

Abstract translation: 要解决的问题：提供一种能够抑制在样品表面形成的损伤层的带电粒子束装置。解决方案：带电粒子束装置包括：电子束照射部分，用于用具有 第一辐照轴; 旋转台，其能够保持所述样本并且具有与所述第一照射轴垂直的方向的旋转轴; 离子束照射部，用于用具有与旋转轴平行的第二照射轴的离子束照射样品; 用于通过用离子束和电子束的照射来检测带电粒子和经由样品产生的光中的至少一个的检测部分; 以及用气体离子束照射样品的气体离子束照射部。

公开(公告)号：JP2015050068A

公开(公告)日：2015-03-16

申请号：JP2013181520

申请日：2013-09-02

Applicant: 株式会社日立ハイテクサイエンス ,  Hitachi High-Tech Science Corp

Inventor： MITSU KIN ,  ASAHATA TATSUYA ,  UEMOTO ATSUSHI

IPC: H01J37/28 ,  H01J37/244 ,  H01J37/317

CPC classification number: H01J37/317 ,  H01J37/244 ,  H01J37/28 ,  H01J37/304 ,  H01J37/3056 ,  H01J2237/063 ,  H01J2237/08 ,  H01J2237/24475 ,  H01J2237/2802 ,  H01J2237/31749

Abstract: 【課題】試料をリアルタイムに観察しつつ針状に加工することが容易な荷電粒子ビーム装置を提供すること。【解決手段】試料の先端部を針状に加工する荷電粒子ビーム装置であって、前記先端部にイオンビームを照射するイオンビーム照射部と、前記先端部に電子ビームを照射する電子ビーム照射部と、前記電子ビームの照射によって前記先端部から生じる二次電子を検出する二次電子検出部と、前記電子ビームの照射によって前記先端部から生じる回折電子を検出するEBSD検出部とを備える。【選択図】図2

Abstract translation: 要解决的问题：提供一种在实时观察时容易地将样品处理成针状的带电粒子束装置。解决方案：将样品的尖端部分加工成针状的带电粒子束装置包括： 离子束照射部，其用离子束照射前端部; 电子束照射部，其用电子束照射前端部; 二次电子检测部，用于通过电子束的照射来检测从前端部产生的二次电子; 以及EBSD检测部，用于通过电子束的照射来检测从前端部产生的衍射电子。

公开(公告)号：JP2014192037A

公开(公告)日：2014-10-06

申请号：JP2013067319

申请日：2013-03-27

Applicant: Hitachi High-Tech Science Corp ,  株式会社日立ハイテクサイエンス

Inventor： MITSU KIN ,  UEMOTO ATSUSHI ,  ASAHATA TATSUYA

IPC: H01J37/317 ,  H01J37/20 ,  H01J37/22 ,  H01J37/28

CPC classification number: H01J37/3002 ,  H01J37/252 ,  H01J37/26 ,  H01J37/304 ,  H01J37/3056 ,  H01J2237/30455

Abstract: PROBLEM TO BE SOLVED: To provide a charged particle beam apparatus capable of easily and accurately creating a cross section indicating a specified crystal orientation.SOLUTION: A charged particle beam apparatus 100 includes: a sample stage 60 for supporting a sample 2; a convergence ion beam lens-barrel; a scattering electron detector 40 for detecting back scattered electrons 40A generated from a cross section 2A of the sample by irradiation with an electron beam 30A; a crystal orientation information creating unit 90A for creating crystal orientation information of a predetermined region in the cross section on the basis of the back scattered electrons; an angle calculation unit 90B for calculating an attachment angle of the sample stage corresponding to a direction of the cross section; and a display unit 91 for displaying the crystal orientation information. When information is inputted, for changing the crystal orientation information of the region displayed on the display unit to a targeted piece of second crystal orientation information, the angle calculation unit 90B calculates the attachment angle corresponding to the direction of the cross section for creating the second crystal orientation information, and the convergence ion beam lens-barrel performs an etching processing on the sample 2 at the calculated attachment angle.

Abstract translation: 要解决的问题：提供一种能够容易且准确地产生表示指定的晶体取向的截面的带电粒子束装置。解决方案：带电粒子束装置100包括：用于支撑样品2的样品台60; 会聚离子束镜筒; 用于通过用电子束30A照射来检测从样品的横截面2A产生的反向散射电子40A的散射电子检测器40; 晶体取向信息生成单元90A，用于根据背散射的电子产生横截面中的预定区域的晶体取向信息; 角度计算单元90B，用于计算与横截面的方向相对应的样本台的安装角度; 以及用于显示晶体取向信息的显示单元91。 当输入信息时，为了将显示在显示单元上的区域的晶体取向信息改变为目标第二晶体取向信息，角度计算单元90B计算与用于创建第二晶体取向信息的横截面的方向相对应的附着角度 晶体取向信息和会聚离子束透镜镜筒以所计算的附着角度对样品2进行蚀刻处理。

公开(公告)号：JP2013196862A

公开(公告)日：2013-09-30

申请号：JP2012060961

申请日：2012-03-16

Applicant: Hitachi High-Tech Science Corp ,  株式会社日立ハイテクサイエンス

Inventor： SUGIYAMA YASUHIKO ,  ASAHATA TATSUYA ,  DOI TOSHIO ,  OBA HIROSHI

IPC: H01J37/317 ,  H01J37/12

CPC classification number: H01J3/14 ,  H01J37/304 ,  H01J2237/0458 ,  H01J2237/30433 ,  H01J2237/30472 ,  H01J2237/31749

Abstract: PROBLEM TO BE SOLVED: To provide a focused ion beam device capable of easily and precisely setting a focusing voltage.SOLUTION: A control terminal records calculated values of focusing voltages with which reference beam currents Athrough Aare obtained for all apertures #1 through #5 in a focusing voltage table in advance. The control terminal obtains an experimental value of the focusing voltage with which the reference beam current Ais obtained for the reference aperture #1. The control terminal obtains a correction value for the focusing voltage by subtracting the recorded calculated value for the reference aperture #1 from the experimental value. The control terminal obtains set values of the focusing voltages by adding respective correction values to the calculated values recorded for all the apertures #1 through #5, and records the resulting values in the focusing voltage table.

Abstract translation: 要解决的问题：提供能够容易且精确地设定聚焦电压的聚焦离子束装置。解决方案：控制端子记录所有孔＃1至＃5获得的参考光束电流A A的聚焦电压的计算值 一个聚焦电压表提前。 控制端子获得参考光圈电流Ais获得的参考光圈＃1的聚焦电压的实验值。 控制端子从实验值中减去参考光圈＃1的记录计算值，从而获得聚焦电压的校正值。 控制终端通过将针对所有孔＃1至＃5记录的计算值相加各自的校正值来获得聚焦电压的设定值，并将得到的值记录在聚焦电压表中。

公开(公告)号：JP2013197046A

公开(公告)日：2013-09-30

申请号：JP2012066005

申请日：2012-03-22

Applicant: Hitachi High-Tech Science Corp ,  株式会社日立ハイテクサイエンス

Inventor： MITSU KIN ,  YAMAMOTO HIROSHI ,  UEMOTO ATSUSHI ,  ASAHATA TATSUYA

IPC: H01J37/317 ,  H01J37/20 ,  H01J37/28 ,  H01J37/30

CPC classification number: H01J37/20 ,  H01J37/023 ,  H01J37/3005 ,  H01J2237/0245

Abstract: PROBLEM TO BE SOLVED: To process and observe a sample by changing WD of an electron beam mirror cylinder in accordance with an objective of observation.SOLUTION: A composite charged particle beam device includes an electron beam mirror cylinder 1 for irradiating a sample 7 with an electron beam 8, an ion beam cylinder 2 for irradiating the sample 7 with an ion beam 9 to etch the sample 7, a sample table drive part 15 which moves a sample table 6 in an irradiation axis of the electron beam 8, and a cylinder adjusting part 18 which moves the electron beam mirror cylinder 1 relative to a sample chamber 3 in order to irradiate the sample 7 with the ion beam 9 at a spot of the sample 7 to which the electron beam 8 is applied.

Abstract translation: 要解决的问题：根据观察目的通过改变电子束镜筒的WD来处理和观察样品。解决方案：复合带电粒子束装置包括电子束镜筒1，用于将样品7照射到 电子束8，用于用离子束9照射样品7以蚀刻样品7的离子束筒2，在电子束8的照射轴线上移动样品台6的样品台驱动部15， 调整部件18使电子束反射镜筒1相对于样品室3移动，以便在被施加电子束8的样品7的点处将样品7与离子束9照射。

公开(公告)号：JP2013065512A

公开(公告)日：2013-04-11

申请号：JP2011204508

申请日：2011-09-20

Applicant: Hitachi High-Tech Science Corp ,  株式会社日立ハイテクサイエンス

Inventor： YAMAMOTO HIROSHI ,  MITSU KIN ,  ASAHATA TATSUYA

IPC: H01J37/28 ,  H01J37/22 ,  H01J37/317

CPC classification number: H01J37/222 ,  G01N23/04 ,  G01N23/225 ,  G01N2223/045 ,  H01J37/3005 ,  H01J37/3056 ,  H01J2237/31745

Abstract: PROBLEM TO BE SOLVED: To display an FIB image and an SEM image allowing an operator to easily grasp a positional relation of samples in observation in a device in which an FIB lens barrel and an SEM lens barrel are configured perpendicular to each other.SOLUTION: A composite charged particle beam device includes: an FIB lens barrel 1; an SEM lens barrel 2 arranged approximately perpendicular to the FIB lens barrel 1; a sample stage 3 on which a sample 4 is placed; a secondary electron detector 5 which detects secondary particles generated from the sample 4; an observation image forming part 15 which forms an FIB image and an SEM image from a detection signal; and a display part 9 which displays the FIB image and the SEM image where right and left directions of the sample in the FIB image and the right and left directions of the sample in the SEM image are same as each other.

Abstract translation: 要解决的问题：为了显示FIB图像和SEM图像，允许操作者容易地掌握在FIB透镜镜筒和SEM透镜镜筒彼此垂直配置的装置中的观察中的样本的位置关系 。 复合带电粒子束装置包括：FIB透镜镜筒1; 大致垂直于FIB透镜镜筒1设置的SEM透镜镜筒2; 放置样品4的样品台3; 二次电子检测器5，其检测从样品4产生的二次粒子; 从检测信号形成FIB图像和SEM图像的观察图像形成部15; 以及显示FIB图像中的样本的左右方向和SEM图像中的样本的左右方向的FIB图像和SEM图像的显示部9相同。 版权所有（C）2013，JPO＆INPIT