Abstract:
PROBLEM TO BE SOLVED: To acquire a cross section observation image having excellent efficiency in a sample including a fine observation object.SOLUTION: A cross section processing observation method comprises the steps of: performing ESD measurement of a cross section; when an X ray of a specific substance or a nonspecific substance rather than the specific substance is detected, changing an irradiation condition of an ion beam for acquiring a plurality of observation images of the cross section of the substance; and performing cross section processing observation of the substance.
Abstract:
PROBLEM TO BE SOLVED: To provide a specimen observation method which enables a specimen to be observed with a high resolution by arranging efficiently and accurately an observation plane of the specimen vertical to an irradiation direction of a charged particle beam.SOLUTION: A specimen observation method includes the steps of: capturing a SEM image 22 of an observation plane 7a by irradiating the observation plane 7a with an electron beam 8; after tilting a specimen stage 6, capturing a SEM image 25 of the observation plane 7a by irradiating the observation plane 7a with the electron beam 8; tilting the specimen stage 6 at a tilting angle where the SEM image of the larger area is captured by comparing an area of the observation plane 7a on the SEM image 22 with an area of the observation plane 7a on the SEM image 25; and observing the observation plane 7a by irradiating the observation plane 7a with the electron beam 8.
Abstract:
PROBLEM TO BE SOLVED: To provide a charged particle beam apparatus capable of easily and accurately creating a cross section indicating a specified crystal orientation.SOLUTION: A charged particle beam apparatus 100 includes: a sample stage 60 for supporting a sample 2; a convergence ion beam lens-barrel; a scattering electron detector 40 for detecting back scattered electrons 40A generated from a cross section 2A of the sample by irradiation with an electron beam 30A; a crystal orientation information creating unit 90A for creating crystal orientation information of a predetermined region in the cross section on the basis of the back scattered electrons; an angle calculation unit 90B for calculating an attachment angle of the sample stage corresponding to a direction of the cross section; and a display unit 91 for displaying the crystal orientation information. When information is inputted, for changing the crystal orientation information of the region displayed on the display unit to a targeted piece of second crystal orientation information, the angle calculation unit 90B calculates the attachment angle corresponding to the direction of the cross section for creating the second crystal orientation information, and the convergence ion beam lens-barrel performs an etching processing on the sample 2 at the calculated attachment angle.
Abstract:
PROBLEM TO BE SOLVED: To provide a focused ion beam apparatus capable of acquiring a region showing specific composition inside a sample in a short time.SOLUTION: A focused ion beam apparatus 100 includes: a focused ion beam irradiation mechanism 20 for forming a first cross section 2s and a plurality of second cross sections 2c1 to 2c4 in a sample 2; first image generation means 90A for generating reflection electron images or secondary electron images of the first cross section and second cross sections as first images Gs, and G1 to G4; second image generation means 90B for generating EDS images or secondary ion images of the first cross section and second cross section as second images Hs and H4; and a control unit 90 for causing the second image generation means to generate the second image of the second cross section, when the first image of the second cross section includes a region differing from a region N showing specific composition in the first image of the first cross section in the case of acquiring the first and second images of the first cross section and the first image of the second cross section.
Abstract:
PROBLEM TO BE SOLVED: To obtain a three-dimensional crystal orientation mapping indicating a crystal orientation in a normal direction of each plane of a plurality of planes of the polyhedron of a sample on the basis of EBSP data of a cross section formed on the sample.SOLUTION: A crystal analyzer comprises: a measurement data storage part 13 storing EBSP data measured at electron beam irradiation points on a plurality of cross sections formed on a sample 5 with a predetermined interval and substantially parallel to each other; crystal orientation database 14 storing crystal orientation information corresponding to the EBSP; and a map construction part 15 that reads crystal orientations in normal directions of a plurality of planes of a polyhedron image obtained by arranging the plurality of cross sections on the basis of the interval, from the crystal orientation database 14 on the basis of EBSP data stored in the measurement data storage part 13, and constructs a three-dimensional crystal orientation map including the distribution of the crystal orientation in each normal direction of the plurality of planes.
Abstract:
PROBLEM TO BE SOLVED: To exactly acquire an EBSP image of a desired observation object inside a sample.SOLUTION: There is provided a sample preparation device which has: a sample support 6 which supports a sample 7; a FIB lens barrel 2 for irradiating the sample 7 with a focused ion beam 9 to be processed; and an irradiation area setting part 16 for setting a focused ion beam irradiation area consisting of a first irradiation area for forming an observation surface for irradiating an electronic beam 8, and a second irradiation area for forming an inclination surface inclined to a normal direction of the observation surface at 67.5 degrees or more and less than 90 degrees in order to detect back scattered electrons.
Abstract:
PROBLEM TO BE SOLVED: To process and observe a sample by changing WD of an electron beam mirror cylinder in accordance with an objective of observation.SOLUTION: A composite charged particle beam device includes an electron beam mirror cylinder 1 for irradiating a sample 7 with an electron beam 8, an ion beam cylinder 2 for irradiating the sample 7 with an ion beam 9 to etch the sample 7, a sample table drive part 15 which moves a sample table 6 in an irradiation axis of the electron beam 8, and a cylinder adjusting part 18 which moves the electron beam mirror cylinder 1 relative to a sample chamber 3 in order to irradiate the sample 7 with the ion beam 9 at a spot of the sample 7 to which the electron beam 8 is applied.