公开(公告)号：JP2004277082A

公开(公告)日：2004-10-07

申请号：JP2003070300

申请日：2003-03-14

Applicant: Mitsubishi Electric Building Techno Service Co Ltd ,  Mitsubishi Electric Corp ,  三菱電機ビルテクノサービス株式会社 ,  三菱電機株式会社

Inventor： HIRAI TAKAHIDE ,  HIRAI TAKASHI ,  SASAKI SHIGEO ,  KAWAHARA TOSHIAKI

IPC: B66B3/00 ,  B66B5/00

Abstract: PROBLEM TO BE SOLVED: To provide an elevator abnormality diagnosis device capable of collecting detection data simultaneously with diagnosis operation for diagnosis and performing detailed and accurate abnormality diagnosis stably.
SOLUTION: This elevator abnormality diagnosis device is provided with an elevator control means 1 for controlling operation of an elevator, a physical quantity detection means 4 for detecting physical quantity caused by operation of the elevator, a physical quantity data collection means 5 for collecting detection data of physical quantity, a physical quantity data diagnosis means 6 for diagnosing abnormality of the elevator based on the collected detection data, and a diagnosis operation informing means 3 for transmitting start timing of diagnosis operation of the elevator to the physical quantity data collection means. The physical quantity data collection means 5 transmits detection data when performing diagnosis operation of the elevator to the physical quantity data diagnosis means 6.
COPYRIGHT: (C)2005,JPO&NCIPI

公开(公告)号：JPH03263748A

公开(公告)日：1991-11-25

申请号：JP11430790

申请日：1990-04-27

Applicant: NISSIN ELECTRIC CO LTD ,  MITSUBISHI ELECTRIC CORP

Inventor： TANJIYOU MASAYASU ,  NAITO KATSUO ,  SHONO KAZUHIRO ,  NAKANISHI TETSUYA ,  FUJISHITA NAOMITSU ,  NOGUCHI KAZUHIKO ,  SASAKI SHIGEO ,  KATO SUSUMU

IPC: C23C14/48 ,  H01J37/302 ,  H01J37/317 ,  H01L21/265

Abstract: PURPOSE:To control the current quantity and current density distribution of an ion beam by providing an extracting electrode control mechanism capable of automatically adjusting the position of a beam extracting electrode, and adjusting the distance between an arc chamber and a beam extracting electrode. CONSTITUTION:Ions radiated into an ion implantation chamber 5 are implanted into wafers 28 to be processed mounted on a rotary disk 6 provided in the ion implantation chamber 5. An ion beam measuring means 7 measuring the current quantity and current density distribution of an ion beam 11b is arranged below the rotary disk 6 corresponding to the position where the ion beam 11b is radiated. The measured data obtained by the ion beam measuring means 7 are received and processed by a control means 10, and the drive of an extracting electrode driving means 8 is controlled based on them. The distance between an arc chamber 2 and an extracting electrode 3 is adjusted, and the ion beams 11a, 11b are corrected.

公开(公告)号：JPH03219544A

公开(公告)日：1991-09-26

申请号：JP14215390

申请日：1990-05-30

Applicant: MITSUBISHI ELECTRIC CORP

Inventor： NOGUCHI KAZUHIKO ,  SASAKI SHIGEO ,  OKUDA SOICHIRO ,  NAKANISHI TETSUYA

IPC: H01J37/04 ,  H01J37/05 ,  H01J37/317 ,  H01L21/265

Abstract: PURPOSE:To make constant the selecting function of charged particles and reduce proportion defective of semiconductor by providing a charged particle generating device, a bipolar electromagnet, a charged particle selecting device, a material arrangement device, and a device for moving the charged particle selecting device. CONSTITUTION:A charged particle emitted from a generating device 1 is passed through an incident focusing position adjusting magnetic pole piece 4 along an orbit 2 and entered into a bipolar electromagnet 2, in which the orbit is turned by 90 deg., and focused in a focusing point 11 by the focusing effect in an outgoing focusing position adjusting magnetic pole piece 6. When the kind of the charged particle, energy and beam current are changed, the orbit of the particle is changed, but when an analyzing slit 8 is moved to the position 8a of the focusing point 11 by a driving device, and a forming slit to a position 9a according thereto, the distribution of the charged particle on the filling surface is not changed, and the proportion defective of product can be reduced.

公开(公告)号：JPH02182385A

公开(公告)日：1990-07-17

申请号：JP194789

申请日：1989-01-10

Applicant: MITSUBISHI ELECTRIC CORP

Inventor： YAMANE YOSHIO ,  SASAKI SHIGEO

IPC: B26F1/26 ,  B23K15/00 ,  B23K15/02

Abstract: PURPOSE:To prevent damage of a material to be worked caused by generation of unexpected electron beam with arcing in an electron gun by making deflecting movement of the beam in an electron beam machine only during stopping period of the electron beam synchronizing with a generating signal of the electron beam. CONSTITUTION:Command from a computer 11 is transmitted to D/A converters 13a, 13e, 13b, 13c, 13d through an interface 12 and by giving each command to an electron mirror 1, blanker 14, focusing coil 3, deflecting coil 6 and motor 8, respectively, the electron beam 2 is converged and irradiates on the optional point on the material to be worked. Then, the blanking signal is transmitted to the blanker 14 so as to move only during stopping period of the electron beam synchronizing with the generating signal of the electron beam given to the electron gun 1. By this method, the stable work can be achieved.

公开(公告)号：JPS642786A

公开(公告)日：1989-01-06

申请号：JP15535887

申请日：1987-06-24

Applicant: MITSUBISHI ELECTRIC CORP

Inventor： NUSHIHARA AKIRA ,  HISAOKA YASUSHI ,  SASAKI SHIGEO

IPC: H01J37/05 ,  B23K15/00 ,  H01J49/26

Abstract: PURPOSE:To facilitate manufacturing and adjusting a device and to speed up the blanking by using a magnetic field and an electric field to cross at right angles with each other to separate the mass of a specific ion and using an electric field generation means to carry out the blanking. CONSTITUTION:As conditions to separate the mass of the specific ion, the E voltage and the blanking voltage are applied to an E electrode 12b and a blanking power source 16 respectively and a beam 14 to be separated is deflected and passed through an aperture 6 for separating to carry out the blanking. By this method, the device can be simplified and made compact and the performance can also be improved.

公开(公告)号：JPS63230876A

公开(公告)日：1988-09-27

申请号：JP6486387

申请日：1987-03-18

Applicant: MITSUBISHI ELECTRIC CORP

Inventor： SASAKI SHIGEO ,  MATSUMURA YASUSHI ,  NUSHIHARA AKIRA

IPC: H01L21/265 ,  C23C14/48 ,  G02B6/13 ,  G21K1/14 ,  G21K5/00 ,  H01J27/02 ,  H01J37/317 ,  H05H3/00

Abstract: PURPOSE:To stably neutralize an ion beam with high precision by providing a means for retaining the secondary electron emitted from a sample in the sample at the time of projecting the ion beam on the sample through a neutralizer. CONSTITUTION:When the sample 7 is irradiated by the ion beam 14, the beam is passed through the neutralizer 15, and the electron emitted from a electron source 1 is pulled out by a means 9 and taken out into an ion beam orbit through a control means 11 for controlling the energy of the electron to neutralize the electric charge of the ion beam 14. A first diffusion preventive means 4 for preventing the diffusion of the electron emitted from the electron source 1 to the outside and a second diffusion preventive means 6 for preventing the diffusion of the electron taken out into the ion beam orbit are provided to the neutralizer 15. When the ion beam 14 is projected on the sample 7 in this way, a secondary electron is emitted from the sample 7, hence the space in the vicinity of the surface of the sample 7 is surrounded with the negative potential by a secondary electron emission preventive electrode 17, and the secondary electron is retained in the sample 7.

公开(公告)号：JPS6329380B2

公开(公告)日：1988-06-13

申请号：JP7297682

申请日：1982-04-29

Applicant: MITSUBISHI ELECTRIC CORP

Inventor： MURAKAMI EISHIN ,  YASUNAGA MASASHI ,  SASAKI SHIGEO

IPC: H01J37/22 ,  H01J37/06 ,  H01J37/24 ,  H01J37/248

公开(公告)号：JPS62290042A

公开(公告)日：1987-12-16

申请号：JP13244086

申请日：1986-06-06

Applicant: MITSUBISHI ELECTRIC CORP

Inventor： NUSHIHARA AKIRA ,  SASAKI SHIGEO ,  HISAOKA YASUSHI

IPC: C23C14/32 ,  H01J27/26

Abstract: PURPOSE:To eliminate the contact of a filament with a sample metal, prolong the service life of the filament and enable the sample metal with high erosion property to be used by coating the filament with an insulating material having high anticorrosion and using high anticorrosion material as a reserver and needle-shaped tip. CONSTITUTION:When a heating power source 12 is operated, a current is applied through a filament 4 and lead wires 5a, 5b, to be concentrated at the filament 4 so that heat is generated and a sample metal is molten. As the temperature of the sample metal 3 becomes efficiently higher, a needle-shaped tip 6 is coated with the film of the liquid metal. Then, the high voltage power source 13 is operated, the liquid metal 3 is electrostatic-evaporated so that ion beams are generated. In this case, the filament 4 attains the high temperature such as 1500 deg.C. But the filament is prevented from the errosion because the filament is not brought in contact with the liquid metal 3. Since a reserver 1 and the needle-shaped tip 6 are brought in contact with the liquid metal, they are eroded. But, in the case that gallium is selected as the liquid metal, the rate of the erosion is slowed because the reserver 1 and needle-shaped tip 6 are kept to be relatively low temperature.

公开(公告)号：JPS58189951A

公开(公告)日：1983-11-05

申请号：JP7297682

申请日：1982-04-29

Applicant: Mitsubishi Electric Corp

Inventor： MURAKAMI EISHIN ,  YASUNAGA MASASHI ,  SASAKI SHIGEO

IPC: H01J37/22 ,  H01J37/06 ,  H01J37/24 ,  H01J37/248

CPC classification number: H01J37/243

Abstract: PURPOSE:To increase the maximum beam current obtained from an electron gun, by connecting the voltage having the polarity opposite to a bias power source, to the bias power supply in series and by erasing the self-bias voltage. CONSTITUTION:A bias voltage generating part 31 and a self-bias erasing voltage generating part 32 are of mutually opposite polarity and connected in series to each other. In this power supply device, the output voltage of said voltage generating part 32 is erased by raising highly enough the output voltage of said voltage generating part 31 in order to obtain a high bias voltage. On the other hand, when the output voltage of the voltage generating part 31 is lowered and the bias voltage is forced to approach 0V, self vias current (i) is generated as shown in the figure, then a self-bias voltage is generated across a discharge resistance 33a; however the voltage generating part 32 of opposite polarity is connected in series to said discharge resistance 33a, so that a bias voltage is not generated across a load resistance 25. Consequently, compared with the case where the self-bias erasing voltage generating part 32 is not used, a maximum electron beam current which is about 30% larger than that of said case can be obtained by using the same electron gun.

Abstract translation: 目的：通过将具有与偏置电源相反极性的电压连接到偏置电源并通过擦除自偏压来增加从电子枪获得的最大光束电流。 构成：偏置电压产生部31和自偏置消除电压产生部32的极性彼此相反，并且彼此串联连接。 在该电源装置中，为了获得高的偏置电压，所述电压产生部件32的输出电压被消除，使得所述电压产生部件31的输出电压足够高。 另一方面，当电压产生部分31的输出电压降低并且偏置电压被迫接近0V时，如图所示产生自通电流（i），然后产生自偏压 放电电阻33a; 然而，相反极性的电压产生部分32串联连接到所述放电电阻33a，使得跨负载电阻25不产生偏置电压。因此，与自偏压消除电压产生部分32是 通过使用相同的电子枪，可以获得大于所述情况大约30％的最大电子束电流。

公开(公告)号：JPS5826767B2

公开(公告)日：1983-06-04

申请号：JP7522877

申请日：1977-06-23

Applicant: MITSUBISHI ELECTRIC CORP

Inventor： SASAKI SHIGEO ,  KAMYAMA ZENJI ,  YASUNAGA MASASHI ,  YABUNAKA FUMIHARU

IPC: H01J1/20