Plasma generating apparatus
    1.
    发明专利
    Plasma generating apparatus 有权
    等离子体发生装置

    公开(公告)号:JP2010123467A

    公开(公告)日:2010-06-03

    申请号:JP2008297518

    申请日:2008-11-21

    Abstract: PROBLEM TO BE SOLVED: To solve a problem of attrition of an antenna cover due to plasma in an ECR type plasma generating apparatus with an antenna.
    SOLUTION: The plasma generating apparatus 10 is equipped with an antenna chamber 40 which is disposed adjacently to a plasma chamber 20 to form plasma 24, and exhausted into a vacuum, the antenna 42 which is installed in its inside and radiates a high-frequency wave, a partition plate 54 which is made of an insulator, which separates the plasma chamber 20 from the antenna chamber 40 to block gas, and which allows the high-frequency wave radiated from the antenna 42 to pass through the partition plate, and a magnet device 60 which is disposed outside the plasma chamber 20 and generates a magnetic field B to cause electron cyclotron resonance in the plasma chamber 20.
    COPYRIGHT: (C)2010,JPO&INPIT

    Abstract translation: 要解决的问题:解决在具有天线的ECR型等离子体发生装置中由于等离子体导致的天线罩的磨损问题。 解决方案:等离子体发生装置10配备有与等离子体室20相邻设置的天线室40,以形成等离子体24,并被排出到真空中,天线42安装在其内部并辐射高 由隔振器制成的分隔板54,其将等离子体室20与天线室40分离成阻塞气体,并且允许从天线42辐射的高频波通过隔板, 以及设置在等离子体室20外部并产生磁场B以在等离子体室20中引起电子回旋共振的磁体装置60.版权所有(C)2010,JPO&INPIT

    Ion source
    2.
    发明专利
    Ion source 有权
    离子源

    公开(公告)号:JP2007280782A

    公开(公告)日:2007-10-25

    申请号:JP2006105898

    申请日:2006-04-07

    Abstract: PROBLEM TO BE SOLVED: To provide an ion source capable of extracting ion beams excelling in parallelism.
    SOLUTION: This ion source includes: a plasma generation vessel 30; a filament 42; a reflecting electrode 48 for reflecting electrons and extracting ions 52; a control electrode 46 kept at the same potential as that of the plasma generation vessel 30; and a deceleration electrode 50 for decelerating the ions 52. They form a planar shape in parallel with the yz-plane. In addition, the ion source is provided with: a first coil 54 for generating a magnetic field parallel to the x-axis in the plasma vessel 30; an extraction electrode system 76 for accelerating the ions 52 to extract them as ion beams 90; and a second coil 86 for generating a magnetic field parallel with the x-axis in the vicinity of the extraction electrode system 76, and generating a magnetic field attenuating toward the traveling direction of the ions 52 in a region between the deceleration electrode 50 and the extraction electrode system 76 in cooperation with the first coil 54.
    COPYRIGHT: (C)2008,JPO&INPIT

    Abstract translation: 要解决的问题:提供能够提取并联的离子束的离子源。 解决方案:该离子源包括:等离子体产生容器30; 灯丝42; 用于反射电子并提取离子的反射电极48; 保持与等离子体产生容器30相同的电位的控制电极46; 以及用于使离子52减速的减速电极50.它们形成与yz平面平行的平面形状。 此外,离子源设置有:用于产生与等离子体容器30中的x轴平行的磁场的第一线圈54; 用于加速离子52以将其提取为离子束90的提取电极系统76; 以及用于在引出电极系统76附近产生与x轴平行的磁场的第二线圈86,并且在减速电极50和第二线圈86之间的区域中产生朝向离子52的行进方向衰减的磁场。 提取电极系统76与第一线圈54协作。版权所有(C)2008,JPO&INPIT

    Ion beam irradiation device
    3.
    发明专利
    Ion beam irradiation device 有权
    离子束辐照器件

    公开(公告)号:JP2007234534A

    公开(公告)日:2007-09-13

    申请号:JP2006057967

    申请日:2006-03-03

    Abstract: PROBLEM TO BE SOLVED: To provide a device capable of enhancing uniformity of a two-dimensional ion beam current distribution at a substrate position. SOLUTION: This ion beam irradiation device is equipped with an ion source to generate an ion beam 4, an electron beam source G to emit an electron beam two-dimensionally scanned in the ion source 2, a power supply 14 for it, an ion beam monitor 10 to measure the two-dimensional beam current distribution of the ion beam 4 at a position equivalent to the substrate, and a control device 12. The control device 12 has a function to uniform the two-dimensional beam current distribution measured by the monitor 10, by relatively increasing the scan speed of the electron beam at a position corresponding to a monitoring point where a large amount of a beam current is monitored by the monitor 10, and decreasing the scan speed of the electron beam at a position corresponding to a monitoring point where a small amount of the beam current is measured, by controlling the power supply 14 based on the measured data from the monitor 10. COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题:提供能够提高基板位置处的二维离子束电流分布的均匀性的装置。 解决方案:该离子束照射装置配备有离子源,以产生离子束4,电子束源G发射在离子源2中二维扫描的电子束,用于其的电源14, 用于测量离子束4在与基板相当的位置处的二维束电流分布的离子束监视器10以及控制装置12.控制装置12具有使二维束电流分布均匀化的功能 通过监视器10相对增加电子束在对应于由监视器10监视大量的电流的监视点的位置处的扫描速度,并且减小电子束在位置处的扫描速度 对应于通过基于来自监视器10的测量数据控制电源14来测量少量的束电流的监视点。(C)2007,JPO&INPIT

    Ion implantation device
    4.
    发明专利
    Ion implantation device 有权
    离子植入装置

    公开(公告)号:JP2008135208A

    公开(公告)日:2008-06-12

    申请号:JP2006318436

    申请日:2006-11-27

    Inventor: FUJITA HIDEKI

    Abstract: PROBLEM TO BE SOLVED: To provide an ion implantation device that suppresses the occurrence of energy contamination while enhancing ion beam transport efficiency by compensating divergence in the Y-direction of an ion beam due to space charge effects or the like.
    SOLUTION: The ion implantation device is provided with first/second permanent magnet rows 40, 42 that are respectively provided on the further upstream side than a target so as to face each other in the Y-direction across a path of an ion beam 4. The permanent magnet row 40 is composed by arraying a plurality of permanent magnets 44, respectively having a pair of magnetic poles in the X-direction, at prescribed intervals in the X-direction while directing the north pole of each permanent magnet 44 to the same direction. The permanent magnet row 42 is composed by arraying a plurality of permanent magnets 46, respectively having a pair of magnetic poles in the X-direction, at prescribed intervals in the X-direction while directing the north pole of each permanent magnet 46 to the same direction opposite to that of the permanent magnet row 40.
    COPYRIGHT: (C)2008,JPO&INPIT

    Abstract translation: 解决问题:提供一种离子注入装置,其通过补偿由于空间电荷效应等导致的离子束的Y方向上的发散,同时提高离子束输送效率而抑制能量污染的发生。 解决方案:离子注入装置设置有第一/第二永磁体列40,42,其分别设置在比目标的更上游侧,以便在Y方向上跨越离子的路径彼此面对 永久磁铁列40通过在X方向上以规定的间隔排列分别具有X方向上的一对磁极的多个永磁体44,同时引导每个永磁体44的北极 朝同一个方向 永磁体列42通过在X方向上以规定的间隔在X方向上排列分别具有一对磁极的多个永磁体46,同时将每个永磁体46的北极引导到同一个 方向与永磁体排40的方向相反。版权所有(C)2008,JPO&INPIT

    Ion implantation device
    5.
    发明专利
    Ion implantation device 有权
    离子植入装置

    公开(公告)号:JP2008135207A

    公开(公告)日:2008-06-12

    申请号:JP2006318435

    申请日:2006-11-27

    Inventor: FUJITA HIDEKI

    Abstract: PROBLEM TO BE SOLVED: To provide an ion implantation device that suppresses the occurrence of energy contamination while enhancing ion-beam transport efficiency by compensating divergence in the Y-direction of an ion beam due to space-charge effects or the like.
    SOLUTION: The ion implantation device is provided with first/second magnets 50, 52 that are arranged so as to face each other in the Y-direction across a ribbon-like path of an ion beam 4 while intersecting with an advancing direction of the ion beam 4. Each magnet has a length covering a dimension in the X-direction of the ion beam 4. Both magnets 50, 52 respectively have a pair of magnetic poles each on the entrance side and the exit side of the ion beam 4 while each magnetic pole of the magnet 50 has a polarity reverse to that of each magnetic pole of the magnet 52. Both magnets generate a magnetic field in the direction causing an inward Lorentz force to act on between both magnets 50, 52 with respect to the ion beam 4.
    COPYRIGHT: (C)2008,JPO&INPIT

    Abstract translation: 解决的问题:提供一种离子注入装置,其通过补偿由于空间电荷效应等导致的离子束的Y方向的发散,从而抑制能量污染的发生,同时提高离子束传输效率。 解决方案:离子注入装置设置有第一/第二磁体50,52,第一/第二磁体50,52沿着Y方向跨越离子束4的带状路径彼此面对,同时与前进方向交叉 每个磁体具有覆盖离子束4的X方向上的尺寸的长度。两个磁体50,52分别在离子束的入射侧和出射侧具有一对磁极 磁体50的每个磁极具有与磁体52的每个磁极的极性相反的极性。两个磁体在向内相对于两个磁体50,52之间产生向内洛伦兹力作用的方向产生磁场。 离子束4.版权所有(C)2008,JPO&INPIT

    Plasma generating device
    6.
    发明专利
    Plasma generating device 有权
    等离子体发生装置

    公开(公告)号:JP2012069509A

    公开(公告)日:2012-04-05

    申请号:JP2011155365

    申请日:2011-07-14

    Abstract: PROBLEM TO BE SOLVED: To provide a high-frequency discharge type plasma generating device which achieves a smaller amount of reduction in PFG current and a longer life.SOLUTION: A plasma generating device has: a plasma generating chamber in which gas is ionized by high frequency discharge to generate plasma; an electron emission hole through which electrons coming from the plasma are emitted to the outside; an antenna provided in the plasma generating chamber for radiating high frequency waves; and an antenna cover composed of an insulator and covering the whole antenna. In the plasma generating device, a plasma electrode having the electron emission hole formed therein is made of a conductive material. The plasma generating device further has a frame cover having protruding portions different in thickness in the region of a cylinder-shape frame with the electrical continuity ensured, inside or both inside and outside the frame. The protruding portions prevent the deposition of the insulator on the surface of the plasma electrode on the side facing the plasma owing to the sputtering by plasma.

    Abstract translation: 要解决的问题:提供一种高频放电型等离子体产生装置,其能够实现更少量的PFG电流的降低和更长的寿命。 解决方案:等离子体产生装置具有:等离子体产生室,其中气体通过高频放电电离以产生等离子体; 来自等离子体的电子通过其发射到外部的电子发射孔; 设置在等离子体发生室中的用于辐射高频波的天线; 以及由绝缘体构成并覆盖整个天线的天线罩。 在等离子体产生装置中,其中形成有电子发射孔的等离子体电极由导电材料制成。 等离子体发生装置还具有框架盖,该框架盖在圆柱形框架的区域中具有不同厚度的突出部分,其中,在框架的内部或外部都保证了电气连续性。 由于等离子体的溅射,突出部分防止绝缘体在等离子体电极的面对等离子体的表面上的沉积。 版权所有(C)2012,JPO&INPIT

    Deflecting electromagnet and ion beam irradiating apparatus
    7.
    发明专利
    Deflecting electromagnet and ion beam irradiating apparatus 有权
    折射电子束和离子束辐射装置

    公开(公告)号:JP2007141545A

    公开(公告)日:2007-06-07

    申请号:JP2005331116

    申请日:2005-11-16

    Inventor: FUJITA HIDEKI

    Abstract: PROBLEM TO BE SOLVED: To reduce electron loss due to E×B drift from a magnetic pole space for improving containment of an electron in the magnetic pole space so that the space charge of ion beam is neutralized efficiently by the confined electrons for reducing the divergence of the ion beam. SOLUTION: This deflecting electromagnet 30a has first and second magnetic poles 32a and 32b mutually facing via an inter-pole space 34, through which an ion beam 4 passes. The deflecting electromagnet further has a pair of potential adjusting electrodes 52, which are placed to sandwich the path of the ion beam 4, in the same directions as the magnetic poles 32a and 32b in the inter-pole space 34, and a potential adjusting power source 54 which applies a positive voltage V 1 to the potential adjusting electrodes 52. COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题:为了减少由于磁极空间的E×B漂移引起的电子损失,用于改善在磁极空间中的电子的容纳,使得离子束的空间电荷被限制的电子有效地中和, 减少离子束的发散。 解决方案:该偏转电磁体30a具有通过离子束4通过的极间空间34相互面对的第一和第二磁极32a和32b。 偏转电磁体还具有一对电位调节电极52,它们被设置为将离子束4的路径夹在与极间空间34中的磁极32a和32b相同的方向上,并且电位调节功率 源54,其向电位调节电极52施加正电压V SB 1 。版权所有(C)2007,JPO&INPIT

    Ion beam irradiation method and ion beam irradiation device
    8.
    发明专利
    Ion beam irradiation method and ion beam irradiation device 审中-公开
    离子束辐照方法和离子束辐照装置

    公开(公告)号:JP2012185953A

    公开(公告)日:2012-09-27

    申请号:JP2011047097

    申请日:2011-03-04

    Abstract: PROBLEM TO BE SOLVED: To provide an in-line type ion irradiation device, irradiating the upper half and the lower half of a substrate with ions using two ion beam supply devices, which is structured so that a desired dosage can be injected over the whole surface of the substrate even when one ion beam supply device stops or abnormally completes its operation in the course of processing.SOLUTION: The present invention controls a substrate rotation mechanism 70 after one round trip of ion beam irradiation processing, inputs a substrate 2 into an ion beam irradiation device 100 again after rotating the substrate by 180 degrees, and irradiates a range where ion beam irradiation processing has not yet been completed with ion beams to irradiate the whole surface of the substrate with ion beams.

    Abstract translation: 要解决的问题:为了提供在线型离子照射装置,使用两个离子束供给装置用离子照射衬底的上半部和下半部,其结构使得可以注入所需剂量 即使一个离子束供给装置在处理过程中停止或异常地完成其操作,也在基板的整个表面上。 解决方案:本发明在离子束照射处理的一次往返之后控制衬底旋转机构70,在将衬底旋转180度之后再次将衬底2输入到离子束照射装置100中,并且照射离子束离子 离子束用离子束照射基片的整个表面尚未完成光束照射处理。 版权所有(C)2012,JPO&INPIT

    Plasma generating device
    9.
    发明专利
    Plasma generating device 审中-公开
    等离子体发生装置

    公开(公告)号:JP2012084624A

    公开(公告)日:2012-04-26

    申请号:JP2010228212

    申请日:2010-10-08

    Inventor: FUJITA HIDEKI

    Abstract: PROBLEM TO BE SOLVED: To provide a high-frequency discharge type plasma generating device by which reduction in a PFG current is small and the life is made longer.SOLUTION: A plasma generating device ionizes gas by high-frequency discharge in a plasma generation container to generate plasma, and emits electrons from the plasma to exterior through electron emission holes. The plasma generating device has an antenna radiating a high-frequency wave, and an antenna cover formed of an insulator and covering the whole of the antenna. Inside of the plasma generation container is covered with an insulator. A plasma electrode material with the electron emission holes is a conductive material. The plasma generating device has an ion collector formed of a conductive material and held by an insulator, and a shield electrode formed of a conductive material and provided on a front face of the ion collector. The shield electrode and the plasma electrode are connected with the same potential. The plasma generating device has an extraction power supply using a target chamber as a positive side and whose negative side is connected with the plasma electrode, and an ion collector power supply using the plasma electrode as a positive side and whose negative side is connected with the ion collector.

    Abstract translation: 要解决的问题:提供一种高频放电型等离子体发生装置,其中PFG电流的减小很小,寿命更长。 解决方案:等离子体产生装置通过等离子体发生容器中的高频放电使气体离子化以产生等离子体,并通过电子发射孔从等离子体向外部发射电子。 等离子体产生装置具有辐射高频波的天线和由绝缘体形成并覆盖整个天线的天线盖。 等离子体发生容器的内部被绝缘体覆盖。 具有电子发射孔的等离子体电极材料是导电材料。 等离子体产生装置具有由导电材料形成并由绝缘体保持的离子集电体,以及由导电材料形成并设置在离子收集器的正面上的屏蔽电极。 屏蔽电极和等离子电极连接相同的电位。 等离子体产生装置具有使用目标室作为正侧并且其负极与等离子体电极连接的提取电源,以及使用等离子体电极作为正侧的负极侧并且其负极与 离子收集器 版权所有(C)2012,JPO&INPIT

    Ion implanting device
    10.
    发明专利
    Ion implanting device 有权
    离子植入装置

    公开(公告)号:JP2008112673A

    公开(公告)日:2008-05-15

    申请号:JP2006295858

    申请日:2006-10-31

    Inventor: FUJITA HIDEKI

    Abstract: PROBLEM TO BE SOLVED: To improve the uniformity of an longitudinal direction (Y direction) ion beam current density distribution at an implantation position to a substrate.
    SOLUTION: This ion implanting device includes an ion source 100 for generating an ion beam 50, an electron beam source Gn for emitting an electron beam 138 scanned in the Y direction to generate plasma 12, a power source 114 for the electron beam source, an ion beam monitor 80 for measuring the Y direction beam current density distribution of the ion beam 50 in the vicinity of the implanting position, and a control device 90. The control device 90 controls the power source 114 based on the measured data from the monitor 80, thereby increasing the scanning speed of the electron beam 138 at a position corresponding to the monitor point at which the beam current density measured by the monitor 80 is large, but decreasing the scanning speed of the electron beam 138 at a position corresponding to the monitor point at which the beam current density measured by the monitor 80 is small, which provides the uniformity of the Y direction beam current density measured by the monitor 80.
    COPYRIGHT: (C)2008,JPO&INPIT

    Abstract translation: 要解决的问题:为了提高植入位置到基板的纵向(Y方向)离子束电流密度分布的均匀性。 解决方案:该离子注入装置包括用于产生离子束50的离子源100,用于发射沿Y方向扫描的电子束138以产生等离子体12的电子束源Gn,用于电子束的电源114 源,用于测量离子束50在植入位置附近的Y方向束电流密度分布的离子束监视器80以及控制装置90.控制装置90基于来自 监视器80,从而在与由监视器80测量的束电流密度大的监视点相对应的位置处增加电子束138的扫描速度,但是在对应的位置减小了电子束138的扫描速度 到由监视器80测量的光束电流密度小的监视点,这提供了由监视器80测量的Y方向光束电流密度的均匀性。 右:(C)2008,JPO&INPIT

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