Abstract:
PROBLEM TO BE SOLVED: To solve a problem of attrition of an antenna cover due to plasma in an ECR type plasma generating apparatus with an antenna. SOLUTION: The plasma generating apparatus 10 is equipped with an antenna chamber 40 which is disposed adjacently to a plasma chamber 20 to form plasma 24, and exhausted into a vacuum, the antenna 42 which is installed in its inside and radiates a high-frequency wave, a partition plate 54 which is made of an insulator, which separates the plasma chamber 20 from the antenna chamber 40 to block gas, and which allows the high-frequency wave radiated from the antenna 42 to pass through the partition plate, and a magnet device 60 which is disposed outside the plasma chamber 20 and generates a magnetic field B to cause electron cyclotron resonance in the plasma chamber 20. COPYRIGHT: (C)2010,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide an ion source capable of extracting ion beams excelling in parallelism. SOLUTION: This ion source includes: a plasma generation vessel 30; a filament 42; a reflecting electrode 48 for reflecting electrons and extracting ions 52; a control electrode 46 kept at the same potential as that of the plasma generation vessel 30; and a deceleration electrode 50 for decelerating the ions 52. They form a planar shape in parallel with the yz-plane. In addition, the ion source is provided with: a first coil 54 for generating a magnetic field parallel to the x-axis in the plasma vessel 30; an extraction electrode system 76 for accelerating the ions 52 to extract them as ion beams 90; and a second coil 86 for generating a magnetic field parallel with the x-axis in the vicinity of the extraction electrode system 76, and generating a magnetic field attenuating toward the traveling direction of the ions 52 in a region between the deceleration electrode 50 and the extraction electrode system 76 in cooperation with the first coil 54. COPYRIGHT: (C)2008,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a device capable of enhancing uniformity of a two-dimensional ion beam current distribution at a substrate position. SOLUTION: This ion beam irradiation device is equipped with an ion source to generate an ion beam 4, an electron beam source G to emit an electron beam two-dimensionally scanned in the ion source 2, a power supply 14 for it, an ion beam monitor 10 to measure the two-dimensional beam current distribution of the ion beam 4 at a position equivalent to the substrate, and a control device 12. The control device 12 has a function to uniform the two-dimensional beam current distribution measured by the monitor 10, by relatively increasing the scan speed of the electron beam at a position corresponding to a monitoring point where a large amount of a beam current is monitored by the monitor 10, and decreasing the scan speed of the electron beam at a position corresponding to a monitoring point where a small amount of the beam current is measured, by controlling the power supply 14 based on the measured data from the monitor 10. COPYRIGHT: (C)2007,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide an ion implantation device that suppresses the occurrence of energy contamination while enhancing ion beam transport efficiency by compensating divergence in the Y-direction of an ion beam due to space charge effects or the like. SOLUTION: The ion implantation device is provided with first/second permanent magnet rows 40, 42 that are respectively provided on the further upstream side than a target so as to face each other in the Y-direction across a path of an ion beam 4. The permanent magnet row 40 is composed by arraying a plurality of permanent magnets 44, respectively having a pair of magnetic poles in the X-direction, at prescribed intervals in the X-direction while directing the north pole of each permanent magnet 44 to the same direction. The permanent magnet row 42 is composed by arraying a plurality of permanent magnets 46, respectively having a pair of magnetic poles in the X-direction, at prescribed intervals in the X-direction while directing the north pole of each permanent magnet 46 to the same direction opposite to that of the permanent magnet row 40. COPYRIGHT: (C)2008,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide an ion implantation device that suppresses the occurrence of energy contamination while enhancing ion-beam transport efficiency by compensating divergence in the Y-direction of an ion beam due to space-charge effects or the like. SOLUTION: The ion implantation device is provided with first/second magnets 50, 52 that are arranged so as to face each other in the Y-direction across a ribbon-like path of an ion beam 4 while intersecting with an advancing direction of the ion beam 4. Each magnet has a length covering a dimension in the X-direction of the ion beam 4. Both magnets 50, 52 respectively have a pair of magnetic poles each on the entrance side and the exit side of the ion beam 4 while each magnetic pole of the magnet 50 has a polarity reverse to that of each magnetic pole of the magnet 52. Both magnets generate a magnetic field in the direction causing an inward Lorentz force to act on between both magnets 50, 52 with respect to the ion beam 4. COPYRIGHT: (C)2008,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a high-frequency discharge type plasma generating device which achieves a smaller amount of reduction in PFG current and a longer life.SOLUTION: A plasma generating device has: a plasma generating chamber in which gas is ionized by high frequency discharge to generate plasma; an electron emission hole through which electrons coming from the plasma are emitted to the outside; an antenna provided in the plasma generating chamber for radiating high frequency waves; and an antenna cover composed of an insulator and covering the whole antenna. In the plasma generating device, a plasma electrode having the electron emission hole formed therein is made of a conductive material. The plasma generating device further has a frame cover having protruding portions different in thickness in the region of a cylinder-shape frame with the electrical continuity ensured, inside or both inside and outside the frame. The protruding portions prevent the deposition of the insulator on the surface of the plasma electrode on the side facing the plasma owing to the sputtering by plasma.
Abstract:
PROBLEM TO BE SOLVED: To reduce electron loss due to E×B drift from a magnetic pole space for improving containment of an electron in the magnetic pole space so that the space charge of ion beam is neutralized efficiently by the confined electrons for reducing the divergence of the ion beam. SOLUTION: This deflecting electromagnet 30a has first and second magnetic poles 32a and 32b mutually facing via an inter-pole space 34, through which an ion beam 4 passes. The deflecting electromagnet further has a pair of potential adjusting electrodes 52, which are placed to sandwich the path of the ion beam 4, in the same directions as the magnetic poles 32a and 32b in the inter-pole space 34, and a potential adjusting power source 54 which applies a positive voltage V 1 to the potential adjusting electrodes 52. COPYRIGHT: (C)2007,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide an in-line type ion irradiation device, irradiating the upper half and the lower half of a substrate with ions using two ion beam supply devices, which is structured so that a desired dosage can be injected over the whole surface of the substrate even when one ion beam supply device stops or abnormally completes its operation in the course of processing.SOLUTION: The present invention controls a substrate rotation mechanism 70 after one round trip of ion beam irradiation processing, inputs a substrate 2 into an ion beam irradiation device 100 again after rotating the substrate by 180 degrees, and irradiates a range where ion beam irradiation processing has not yet been completed with ion beams to irradiate the whole surface of the substrate with ion beams.
Abstract:
PROBLEM TO BE SOLVED: To provide a high-frequency discharge type plasma generating device by which reduction in a PFG current is small and the life is made longer.SOLUTION: A plasma generating device ionizes gas by high-frequency discharge in a plasma generation container to generate plasma, and emits electrons from the plasma to exterior through electron emission holes. The plasma generating device has an antenna radiating a high-frequency wave, and an antenna cover formed of an insulator and covering the whole of the antenna. Inside of the plasma generation container is covered with an insulator. A plasma electrode material with the electron emission holes is a conductive material. The plasma generating device has an ion collector formed of a conductive material and held by an insulator, and a shield electrode formed of a conductive material and provided on a front face of the ion collector. The shield electrode and the plasma electrode are connected with the same potential. The plasma generating device has an extraction power supply using a target chamber as a positive side and whose negative side is connected with the plasma electrode, and an ion collector power supply using the plasma electrode as a positive side and whose negative side is connected with the ion collector.
Abstract:
PROBLEM TO BE SOLVED: To improve the uniformity of an longitudinal direction (Y direction) ion beam current density distribution at an implantation position to a substrate. SOLUTION: This ion implanting device includes an ion source 100 for generating an ion beam 50, an electron beam source Gn for emitting an electron beam 138 scanned in the Y direction to generate plasma 12, a power source 114 for the electron beam source, an ion beam monitor 80 for measuring the Y direction beam current density distribution of the ion beam 50 in the vicinity of the implanting position, and a control device 90. The control device 90 controls the power source 114 based on the measured data from the monitor 80, thereby increasing the scanning speed of the electron beam 138 at a position corresponding to the monitor point at which the beam current density measured by the monitor 80 is large, but decreasing the scanning speed of the electron beam 138 at a position corresponding to the monitor point at which the beam current density measured by the monitor 80 is small, which provides the uniformity of the Y direction beam current density measured by the monitor 80. COPYRIGHT: (C)2008,JPO&INPIT