電子ビーム表面改質装置

    公开(公告)号:JP6450809B1

    公开(公告)日:2019-01-09

    申请号:JP2017126558

    申请日:2017-06-28

    Inventor: 井上 基弘

    Abstract: 【課題】被照射体に形成されている穴の側面に低エネルギ密度の電子ビームを照射して表面を改質することが困難である。 【解決手段】真空チャンバ1の中に照射穴7Aが形成されている被照射体7が設置される。カソード電極5Eを照射穴7Aの側面に対向配置する。カソード電極5Eは、照射穴7Aの少なくとも側面に対向する基体50Aの面の全面にわたって多数の金属突起50Gを有する。カソード電5Eと照射穴7Aの側面との間に導電性メッシュ5Gを配設する。導電性メッシュ5Gは、被照射体7と部分的に接触して被照射体7と同電位にされる。 【選択図】図1

    Electron source
    6.
    发明专利

    公开(公告)号:JP5325623B2

    公开(公告)日:2013-10-23

    申请号:JP2009071352

    申请日:2009-03-24

    Inventor: 徳康 佐々木

    Abstract: PROBLEM TO BE SOLVED: To provide an electron source which has the function of plasma generation, which is not deteriorated, and includes a simple structure. SOLUTION: An inner structure material 4 disposed between an inner wall 9 and a collector electrode 3 in a plasma generation chamber 1 can prevent deposition of a conductive material on the inner wall 9 in the plasma formation chamber 1. Accordingly, a high-frequency electric field from a high-frequency antenna 2 is not shielded, and therefore initial plasma of a capacity coupling type can be generated by the high-frequency electric field. Even when the conductive material is deposited on the inner structure material 4 to shield the high-frequency electric field, the deposit is deposited on a side closer to the collector electrode 3 in the inner structure material 4, and therefore the high-frequency electric field from the inner structure material 4 into the plasma generation chamber 1 is shielded, but the high-frequency electric field from the inner wall 9 to the inner structure material 4 is shielded. Because a distance d is set between the inner structure material 4 and the inner wall 9, the initial plasma of the capacity coupling type can be generated in a region between the inner structure material 4 and the inner wall 9 by the high-frequency electric field. COPYRIGHT: (C)2011,JPO&INPIT

    Plasma generating device
    9.
    发明专利
    Plasma generating device 有权
    等离子体发生装置

    公开(公告)号:JP2012069509A

    公开(公告)日:2012-04-05

    申请号:JP2011155365

    申请日:2011-07-14

    Abstract: PROBLEM TO BE SOLVED: To provide a high-frequency discharge type plasma generating device which achieves a smaller amount of reduction in PFG current and a longer life.SOLUTION: A plasma generating device has: a plasma generating chamber in which gas is ionized by high frequency discharge to generate plasma; an electron emission hole through which electrons coming from the plasma are emitted to the outside; an antenna provided in the plasma generating chamber for radiating high frequency waves; and an antenna cover composed of an insulator and covering the whole antenna. In the plasma generating device, a plasma electrode having the electron emission hole formed therein is made of a conductive material. The plasma generating device further has a frame cover having protruding portions different in thickness in the region of a cylinder-shape frame with the electrical continuity ensured, inside or both inside and outside the frame. The protruding portions prevent the deposition of the insulator on the surface of the plasma electrode on the side facing the plasma owing to the sputtering by plasma.

    Abstract translation: 要解决的问题:提供一种高频放电型等离子体产生装置,其能够实现更少量的PFG电流的降低和更长的寿命。 解决方案:等离子体产生装置具有:等离子体产生室,其中气体通过高频放电电离以产生等离子体; 来自等离子体的电子通过其发射到外部的电子发射孔; 设置在等离子体发生室中的用于辐射高频波的天线; 以及由绝缘体构成并覆盖整个天线的天线罩。 在等离子体产生装置中,其中形成有电子发射孔的等离子体电极由导电材料制成。 等离子体发生装置还具有框架盖,该框架盖在圆柱形框架的区域中具有不同厚度的突出部分,其中,在框架的内部或外部都保证了电气连续性。 由于等离子体的溅射,突出部分防止绝缘体在等离子体电极的面对等离子体的表面上的沉积。 版权所有(C)2012,JPO&INPIT

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