公开(公告)号：JP2007080963A

公开(公告)日：2007-03-29

申请号：JP2005264086

申请日：2005-09-12

Applicant: Sharp Corp ,  シャープ株式会社

Inventor： DAITO MASAFUMI ,  SHIMIZU KAZUHISA ,  TOYOSHIMA TETSURO

IPC: H01L21/203 ,  C23C14/24 ,  C23C16/52 ,  C30B23/08 ,  H01L21/205

Abstract: PROBLEM TO BE SOLVED: To provide a method and a unit to form a thin film which is formed in its stabilized quality.
SOLUTION: In a crystal growth step, the thin film is formed using a thin film forming apparatus 11. The characteristic value of the thin film formed in this step includes a process error w. In a measuring step, measured characteristic of the formed thin film is measured with a measuring unit 12. The measured characteristic value measured in this step includes a measuring error ν. In a virtual crystal growth step, characteristic value of the thin film formed with a virtual thin film forming apparatus 13 is obtained and an arithmetic characteristic value is computed. In a measuring error removing step, a forecasted characteristic value wherein only the measuring error ν among the process errors w and measuring errors ν is removed from the measuring characteristic value can be computed with a measuring error removing unit 14, on the basis of the computed characteristic value and the measured characteristic value. Moreover, in a apparatus condition determining step, the new apparatus condition of the thin film forming apparatus 11 is determined with a condition setting unit 15 based on the forecasted characteristic value.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供形成稳定质量的薄膜的方法和单元。 解决方案：在晶体生长步骤中，使用薄膜形成装置11形成薄膜。在该步骤中形成的薄膜的特征值包括处理误差w。 在测量步骤中，用测量单元12测量所形成的薄膜的测量特性。在该步骤中测量的测量特征值包括测量误差ν。 在虚拟晶体生长步骤中，获得由虚拟薄膜形成装置13形成的薄膜的特征值，并计算算术特性值。 在测量误差消除步骤中，可以用测量误差去除单元14基于计算出的测量误差去除单元14来计算其中只有处理误差w中的测量误差ν和测量误差ν从测量特性值中去除的预测特征值 特征值和测量特征值。 此外，在装置条件判定步骤中，根据预测的特性值，利用条件设定部15确定薄膜形成装置11的新的装置状态。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2003344865A

公开(公告)日：2003-12-03

申请号：JP2002148044

申请日：2002-05-22

Applicant: Sharp Corp ,  シャープ株式会社

Inventor： DAITO MASAFUMI

IPC: G02F1/1343 ,  G02F1/1345 ,  G02F1/1368 ,  H01L21/336 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a matrix board for a liquid crystal by which the matrix board for the liquid crystal can be manufactured by using the reduced number of sheets of photomasks and to provide the matrix board for the liquid crystal. SOLUTION: A TFT active matrix board 1 is manufactured in such a manner that a TFT active matrix circuit 10 comprising a TFT element part 31 wherein a gate electrode film 12, a gate insulating film 14, a first semiconductor layer 15, a second semiconductor layer 16, a source and drain electrode film 17 and a passivation film 19 are layered on a glass substrate 11 is formed, an acrylic resin film 20 is formed so as to cover a resist part formed in a previously determined position on the TFT active matrix circuit 10 and the TFT active matrix circuit 10, the resist part is exposed by etching and then removed to form a through-hole and a pixel electrode 22a and contact holes 22b and 22c are formed by covering the surfaces of the acrylic resin film 20 and the through- hole with a conductive material. COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：提供一种用于制造液晶矩阵板的方法，通过该方法可以通过使用减少数量的光掩模来制造用于液晶的矩阵板，并且提供用于液晶的矩阵板 液晶。 解决方案：制造TFT有源矩阵板1，使得TFT有源矩阵电路10包括TFT元件部分31，其中栅极电极膜12，栅极绝缘膜14，第一半导体层15， 第二半导体层16，源极和漏极电极膜17和钝化膜19形成在玻璃基板11上，形成丙烯酸树脂膜20，以覆盖在TFT上预先确定的位置上形成的抗蚀剂部分 有源矩阵电路10和TFT有源矩阵电路10，通过蚀刻曝光抗蚀剂部分，然后去除以形成通孔，并且通过覆盖丙烯酸树脂膜的表面形成像素电极22a和接触孔22b和22c 20和带导电材料的通孔。 版权所有（C）2004，JPO

公开(公告)号：JP2004053957A

公开(公告)日：2004-02-19

申请号：JP2002211745

申请日：2002-07-19

Applicant: Sharp Corp ,  シャープ株式会社

Inventor： DAITO MASAFUMI

IPC: G02F1/1333 ,  G02F1/1343 ,  G02F1/1368 ,  G03F7/20 ,  H01L21/312 ,  H01L21/336 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To reduce the number of sheets of photomasks used when a liquid crystal display is manufactured. SOLUTION: In the steps for manufacturing a wiring board 50 for the liquid crystal display, a first circuit 44 is formed first on a first substrate 41, an interlayer insulating layer 45 covering the first circuit 44 is formed and the surface of the interlayer insulating layer 45 is made water-repellent. A resist pattern having multi-step local thickness is formed on the interlayer insulating layer 45 using photomasks capable of halftone exposure. The interlayer insulating layer 45 is etched using the resist pattern as a mask and the resist pattern is removed. A recessed part 52 and a through hole 53 of the interlayer insulating layer 45 are filled with a conductive material. Thus, a pixel electrode 46 and the first circuit 44 can be three dimensionally superposed and the number of sheets of the photomasks used when the liquid crystal display is manufactured is reduced. COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2003295220A

公开(公告)日：2003-10-15

申请号：JP2002096874

申请日：2002-03-29

Applicant: Sharp Corp ,  シャープ株式会社

Inventor： DAITO MASAFUMI

IPC: G02F1/1368 ,  H01L21/336 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a matrix board for a liquid crystal with the necessary number of photo masks reduced, and to provide a matrix board for a liquid crystal. SOLUTION: A TFT active matrix board 1 is manufactured by forming a TFT element part 31 laminated with a gate electrode film 12, a gate insulating film 14, a 1st semiconductor layer 15, a 2nd semiconductor layer 16, a source-drain electrode film 17, and a passivation film 19, forming a projection part 40 at a predetermined position of the TFT element part 31, forming an acrylic resin film 20 so that it covers the projection part 40 and the TFT element part 31 where the projection part 40 is not formed, etching the acrylic resin film 20 to expose the projection part 40 and form a pixel electrode 21a on the surface of the projection part 40 and the acrylic resin 20, and connecting the projection part 40 with the pixel electrode 21a. COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：提供一种制造具有所需数量的光掩模的液晶矩阵板的制造方法，并提供用于液晶的矩阵板。 解决方案：通过形成层叠有栅电极膜12，栅极绝缘膜14，第一半导体层15，第二半导体层16，源极 - 漏极的TFT元件部分31来制造TFT有源矩阵板1 电极膜17和钝化膜19，在TFT元件部分31的预定位置处形成突出部分40，形成丙烯酸树脂膜20，以覆盖突出部分40和TFT元件部分31，其中投影部分 40，在突出部40和丙烯酸树脂20的表面上蚀刻丙烯酸树脂膜20以露出突出部40并形成像素电极21a，并将突出部40与像素电极21a连接。 版权所有（C）2004，JPO

公开(公告)号：JP2004177429A

公开(公告)日：2004-06-24

申请号：JP2002339979

申请日：2002-11-22

Applicant: Sharp Corp ,  シャープ株式会社

Inventor： DAITO MASAFUMI ,  MICHIJIMA MASASHI

IPC: G02F1/13 ,  G02F1/1333 ,  G02F1/1343 ,  G03F7/20

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a matrix substrate for a liquid crystal with which a liquid repellent layer with a property to repel a conductive material to form a conductive film is patterned without using lifting-off and to provide the matrix substrate for the liquid crystal manufactured with the method. SOLUTION: The method for manufacturing the matrix substrate for the liquid crystal has a process to form a photosensitive electric insulating film 20 so as to cover a TFT active matrix circuit 10 formed on an electric insulating substrate 11, to form a photosensitive water repellent film 21 on the surface of the photosensitive electric insulating film 20, to subject the photosensitive electric insulating film 20 and the photosensitive water repellent film 21 to halftone exposure, to remove the photosensitive water repellent film 21 on a position on which the pixel electrode is to be formed, further to form a through hole reaching a source-drain electrode film 17 from the surface of the photosensitive electric insulating film 20, to form a coat-type transparent conductive film 23 by coating the surface of the photosensitive electric insulating film 20 and the through hole with the conductive material, to form the pixel electrode 23a and a contact hole 23b and to obtain the TFT active matrix substrate 1. COPYRIGHT: (C)2004,JPO