Ion beam generating device, ion doping device, ion beam generating method, and mass separation method
    1.
    发明专利
    Ion beam generating device, ion doping device, ion beam generating method, and mass separation method 审中-公开
    离子束生成装置,离子装置,离子束生成方法和质量分离方法

    公开(公告)号:JP2008010282A

    公开(公告)日:2008-01-17

    申请号:JP2006178799

    申请日:2006-06-28

    Abstract: PROBLEM TO BE SOLVED: To provide a mass separation device for separating one or a plurality of ion species contained in an introduced ion beam by curving an orbit of an ion beam by magnetic field action depending on ion mass, capable of improving mass separation performance without decreasing an ion beam current amount. SOLUTION: The mass separation device 130 for separating the one or the plurality of ion species contained in the ion beam by curving the orbit of the ion beam by the magnetic field action depending on the ion mass improves mass separation performance without greatly reducing an ion beam current by entering the ion beam by inclining from a vertical direction with respect to an ion beam incident surface 130a of the mass separation device 130, and thus the ion beam separated by mass with high precision can be generated. COPYRIGHT: (C)2008,JPO&INPIT

    Abstract translation: 要解决的问题:提供一种质量分离装置,用于通过根据离子质量的磁场作用弯曲离子束的轨道来分离引入离子束中所含的一种或多种离子种类,能够改善质量 分离性能而不降低离子束电流量。 解决方案:用于通过根据离子质量的磁场作用弯曲离子束的轨道来离子束分离离子束中的一种或多种离子种类的质量分离装置130提高质量分离性能而不会大大降低 离子束电流通过相对于质量分离装置130的离子束入射面130a从垂直方向倾斜而进入离子束,因此可以产生以高精度被质量分离的离子束。 版权所有(C)2008,JPO&INPIT

    Ion source and manufacturing method of semiconductor device
    2.
    发明专利
    Ion source and manufacturing method of semiconductor device 审中-公开
    半导体器件的离子源和制造方法

    公开(公告)号:JP2006310161A

    公开(公告)日:2006-11-09

    申请号:JP2005132784

    申请日:2005-04-28

    Abstract: PROBLEM TO BE SOLVED: To enable to reduce an operating loss caused by replacement of a deteriorated filament 15, by prolonging life through restraint of deterioration of the filament 15, in producing boron ion by making thermal electron released from the filament 15 collide with molecules of material gas containing boron atoms. SOLUTION: The filament 15 is heated by heating means 16, 27 up to a temperature higher than a melting point of boron. With this, boron is prevented from depositing on the filament in a solid phase, so that chemical reaction between the boron and the filament material can be restrained to suppress chemical deterioration of the filament, and therefore, the life of the filament 15 is overwhelmingly affected by chemical deterioration than physical deterioration by heat in relation to boron ion. COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题为了能够减少由劣化细丝15的更换引起的操作损失,通过通过限制丝15的劣化来延长使用寿命,通过使从灯丝15释放的热电子相撞而产生硼离子 与含硼原子的材料气体分子。 解决方案:灯丝15被加热装置16,27加热到高于硼的熔点的温度。 由此,防止了硼在固相中沉积在长丝上,从而可以抑制硼与长丝材料之间的化学反应以抑制丝的化学变质,因此丝15的寿命压倒性地受到影响 通过化学劣化比相对于硼离子的热的物理劣化。 版权所有(C)2007,JPO&INPIT

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