公开(公告)号：JP2009070899A

公开(公告)日：2009-04-02

申请号：JP2007235386

申请日：2007-09-11

Applicant: Sharp Corp ,  シャープ株式会社

Inventor： TAKAHASHI DAISUKE ,  NAKAMURA TSUNEO ,  KIYOUHO MASANORI ,  TAKEDA NAOKI

IPC: H01L21/3065 ,  H01M8/02 ,  H05H1/24

CPC classification number: Y02E60/50

Abstract: PROBLEM TO BE SOLVED: To provide a plasma processing method and a plasma processing device for processing a pattern that is finer in dimension than plasma. SOLUTION: The plasma processing device includes an upper electrode 2 for generating plasma 1, a stage 3 on which a base material 6 to be subjected to plasma processing is disposed, a power supply 4 which applies a voltage to the upper electrode 2, a moving mechanism 5 disposed on the upper electrode 2, and a control unit 120. The control unit 120 controls the operation of the power supply 4 and the moving mechanism 5 to repeat generation of the plasma 1 and move of the upper electrode 2 through the moving mechanism 5. The moving mechanism 5 moves the upper electrode 2 so that an exposure area of the base material 6 to the plasma 1 before the move overlaps the exposure area after the move. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供等离子体处理方法和等离子体处理装置，用于处理尺寸比等离子体更精细的图案。 解决方案：等离子体处理装置包括用于产生等离子体1的上电极2，设置有待等离子体处理的基材6的载物台3，向上电极2施加电压的电源4 ，设置在上电极2上的移动机构5和控制单元120.控制单元120控制电源4和移动机构5的操作，以重复等离子体1的产生并且上电极2通过 移动机构5使上部电极2移动，使得在移动之后移动与基底材料6的暴露面积与移动之间的曝光区域重叠。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2005011840A

公开(公告)日：2005-01-13

申请号：JP2003170916

申请日：2003-06-16

Applicant: Sharp Corp ,  シャープ株式会社

Inventor： KIYOUHO MASANORI

IPC: H01L21/20 ,  H01L21/268

Abstract: PROBLEM TO BE SOLVED: To restrain a polycrystalline Si film subjected to laser annealing from varying in characteristics on a substrate due to the thickness distribution of the Si film.
SOLUTION: In a laser annealing device 1, an amorphous Si film 7 on a plane is divided into a plurality of regions, the thickness of the film 7 in each region is measured with a film thickness measuring means 4, and a control means 5 regulates the oscillation output of a light source 2 or the light volume of an irradiation optical system 3 responding to a measurement output of thickness. Consequently, a laser beam irradiating the amorphous Si film is regulated in energy density. Therefore, the divided regions of a substrate 6 can be each subjected to annealing with an optimal irradiation energy density, so that the polycrystalline Si film subjected to annealing can be set uniform in crystal properties.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：为了抑制由于Si膜的厚度分布而在基板上的特性变化而进行激光退火的多晶Si膜。 解决方案：在激光退火装置1中，将平面上的非晶硅膜7分成多个区域，用膜厚测量装置4测量每个区域中的膜7的厚度，并且控制 装置5响应于厚度的测量输出来调节光源2的振荡输出或照射光学系统3的光量。 因此，照射非晶Si膜的激光束的能量密度被调节。 因此，基板6的分割区域各自可以以最佳的照射能量密度进行退火，从而可以使经退火的多晶Si膜的结晶特性均匀。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2009080287A

公开(公告)日：2009-04-16

申请号：JP2007249278

申请日：2007-09-26

Applicant: Sharp Corp ,  シャープ株式会社

Inventor： KIYOUHO MASANORI

IPC: G03F7/00 ,  G03F7/38 ,  G03F7/40

Abstract: PROBLEM TO BE SOLVED: To provide an offset printing plate capable of achieving high resolution in printing characteristics by maintaining high ink receptivity of an image portion and maintaining favorable minute dot reproducibility, even when the aspect ratio of the image portion (recessed portion) is made high due to micronization of the area of the image portion for achieving higher resolution, and to provide a method for manufacturing the printing plate.
SOLUTION: The offset printing plate has a non-image portion 21 having liquid repellency against an ink material and an image portion 22 having lyophilic property. The non-image portion 21 includes a surface layer 4 comprising a photosensitive resin material containing a main chain the end of which is terminated by a functional group having liquid repellency against the ink material, and an intermediate layer comprising an ink lyophilic resin layer 3 under the surface layer 4.
COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：为了提供一种能够通过保持图像部分的高吸墨性并保持良好的微小点再现性而能够实现高分辨率的印刷特性的胶版印刷版，即使图像部分（凹部）的纵横比 ）由于用于实现更高分辨率的图像部分的区域的微粉化而变得高，并且提供了一种制造印刷版的方法。 解决方案：胶印板具有对油墨材料具有拒液性的非图像部分21和具有亲液性的图像部分22。 非图像部分21包括表面层4，该表面层4包含感光性树脂材料，该感光性树脂材料包含主链，其末端由对油墨材料具有疏液性的官能团所终止;以及中间层，其包含下面的亲液性树脂层3 表层4.版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2008210968A

公开(公告)日：2008-09-11

申请号：JP2007045703

申请日：2007-02-26

Applicant: Sharp Corp ,  シャープ株式会社

Inventor： KIYOUHO MASANORI

IPC: H01L21/027 ,  H01S5/02

Abstract: PROBLEM TO BE SOLVED: To provide a forming method of a pattern capable of forming a pattern having excellent pattern precision by a simple process.
SOLUTION: The pattern forming method for forming a pattern on a substrate 10 via insulating layers 1, 2 includes: a process for forming the insulating layer 1 on the surface of the substrate 10; a process for forming the insulating layer 2 on the surface of the insulating layer 1 by arranging a photosensitive insulating material having a water-repelling group; a liquid-repellent layer formation process for manifesting a liquid-repellent layer 3 having repellency to a pattern forming material 15 of liquid for forming the pattern onto the surface of the insulating layer 2; a process for forming a recess 14 corresponding to the pattern; a process for arranging the pattern forming material 15 at the recess 14; and a process for baking the pattern forming material 15.
COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供通过简单的工艺能够形成具有优异图案精度的图案的图案的形成方法。 解决方案：用于通过绝缘层1,2在衬底10上形成图案的图案形成方法包括：在衬底10的表面上形成绝缘层1的工艺; 通过设置具有防水组的感光绝缘材料在绝缘层1的表面上形成绝缘层2的工艺; 一种疏液层形成方法，用于表现出对图案形成材料15具有排斥性的防液层3，用于将图案形成在绝缘层2的表面上; 用于形成对应于图案的凹部14的工艺; 用于将图案形成材料15布置在凹部14处的工艺; 以及烘烤图案形成材料15的方法。（C）2008，JPO＆INPIT

公开(公告)号：JP2005294735A

公开(公告)日：2005-10-20

申请号：JP2004111108

申请日：2004-04-05

Applicant: Sharp Corp ,  シャープ株式会社

Inventor： KIYOUHO MASANORI ,  MITANI YASUHIRO ,  NOZAKI HIROSHIGE ,  FUJIWARA TAKATO ,  NOMURA KATSUMI ,  FUKUDA KOJI ,  TOMOKAGE HIROKAZU

IPC: H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To provide a method for determining irradiated energy density of a laser beam that is not subject to variation in crystalline property of an irradiated film obtained by the influence of a change of a laser oscillator condition and the like when irradiating the laser beam to strengthen the crystalline property of the irradiated film, and a method for manufacturing a semiconductor substrate using the method as well as an apparatus for mamufacturing a semiconductor substrate using the same.
SOLUTION: Laser beams having various irradiated energy densities are radiated to an irradiated film formed on a substrate, and surface scattering optical intensities of the irradiated film are measured for respective irradiated energy densities, thus preparing energy density and surface scattering optical intensity correspondence information. Here, the correspondence information is, for example, characteristic curves of irradiated energy densities shown in the figure and surface scattering optical intensities. Based on this correspondence information, an irradiated energy density is determined from surface scattering optical intensity as a preset target value.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种用于确定通过激光振荡器状态等的变化的影响而获得的不受照射膜的结晶性变化的激光束的照射能量密度的测定方法， 照射激光束以增强照射膜的结晶性，以及使用该方法制造半导体衬底的方法以及使用该半导体衬底的半导体衬底的制造装置。 解决方案：将具有各种照射能量密度的激光束照射到形成在基板上的照射膜，并且对各照射能量密度测量照射膜的表面散射光强度，从而制备能量密度和表面散射光强度对应 信息。 这里，对应信息是例如图中所示的照射能量密度和表面散射光强度的特性曲线。 基于该对应信息，从表面散射光强度确定照射的能量密度作为预设目标值。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2005183774A

公开(公告)日：2005-07-07

申请号：JP2003424370

申请日：2003-12-22

Applicant: Semiconductor Energy Lab Co Ltd ,  Sharp Corp ,  シャープ株式会社 ,  株式会社半導体エネルギー研究所

Inventor： ARAO TATSUYA ,  KITAKADO HIDETO ,  MATSUO TAKUYA ,  KIYOUHO MASANORI

IPC: H01L27/08 ,  H01L21/336 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device which prevents spot-facing in an underlayer insulating film under a semiconductor layer. SOLUTION: In the manufacturing method of the semiconductor device, semiconductor layers 3a, 3b are formed on the underlayer insulating film 2, a first insulating film 4 is formed on the semiconductor layers 3a, 3b, and the first insulating film 4 located on a channel formation region of the semiconductor layer 3a at a low voltage driving side is removed by etching using the semiconductor layer 3a as an etching stopper. Consequently, a second insulating film 6 is formed on the channel formation region of the semiconductor layer 3a and the first insulating film 4 with the first insulating film 4 left on a source region and a drain region of the semiconductor layer 3a and the semiconductor layer 3b. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种防止在半导体层下面的下层绝缘膜中的点对准的半导体器件。 解决方案：在半导体器件的制造方法中，半导体层3a，3b形成在下层绝缘膜2上，第一绝缘膜4形成在半导体层3a，3b上，第一绝缘膜4位于 在半导体层3a的低电压驱动侧的沟道形成区域上通过使用半导体层3a作为蚀刻停止层的蚀刻来去除。 因此，第二绝缘膜6形成在半导体层3a和第一绝缘膜4的沟道形成区上，第一绝缘膜4留在半导体层3a和半导体层3b的源极区域和漏极区域上 。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2008010282A

公开(公告)日：2008-01-17

申请号：JP2006178799

申请日：2006-06-28

Applicant: Sharp Corp ,  シャープ株式会社

Inventor： KIYOUHO MASANORI ,  TAKEUCHI HIROAKI ,  MAKITA NAOKI ,  NAKANISHI TAKESHI ,  HASHIMOTO MASATO

IPC: H01J37/317 ,  C23C14/46 ,  C23C14/48 ,  H01J49/06 ,  H01L21/265

Abstract: PROBLEM TO BE SOLVED: To provide a mass separation device for separating one or a plurality of ion species contained in an introduced ion beam by curving an orbit of an ion beam by magnetic field action depending on ion mass, capable of improving mass separation performance without decreasing an ion beam current amount. SOLUTION: The mass separation device 130 for separating the one or the plurality of ion species contained in the ion beam by curving the orbit of the ion beam by the magnetic field action depending on the ion mass improves mass separation performance without greatly reducing an ion beam current by entering the ion beam by inclining from a vertical direction with respect to an ion beam incident surface 130a of the mass separation device 130, and thus the ion beam separated by mass with high precision can be generated. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供一种质量分离装置，用于通过根据离子质量的磁场作用弯曲离子束的轨道来分离引入离子束中所含的一种或多种离子种类，能够改善质量 分离性能而不降低离子束电流量。 解决方案：用于通过根据离子质量的磁场作用弯曲离子束的轨道来离子束分离离子束中的一种或多种离子种类的质量分离装置130提高质量分离性能而不会大大降低 离子束电流通过相对于质量分离装置130的离子束入射面130a从垂直方向倾斜而进入离子束，因此可以产生以高精度被质量分离的离子束。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2007200040A

公开(公告)日：2007-08-09

申请号：JP2006018145

申请日：2006-01-26

Applicant: Sharp Corp ,  シャープ株式会社

Inventor： KIYOUHO MASANORI ,  TAKEUCHI HIROAKI ,  MAKITA NAOKI ,  NAKANISHI TAKESHI

IPC: G06F11/00 ,  G05B9/02

Abstract: PROBLEM TO BE SOLVED: To provide a controller controlling a production device by execution of a control application program, capable of easily and promptly restoring a state that the original control application program is executed even when the controller comes into a trouble state after a change when changing the control application program.
SOLUTION: This controller has: an HDD 47 storing the old application program 1 and the new application program 3 for controlling the production device 51 in a control computer system 40 for controlling the production device 51; and an arithmetic part 42 capable of executing the application programs 1, 3. The HDD 47 further stores an application changeover program 4 for changing over between the old application program 1 and the new application program 3, and selectively making the arithmetic part 42 execute one of them.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供一种通过执行控制应用程序来控制生产装置的控制器，即使在控制器进入故障状态之后，即使在控制器进入故障状态之后，也能够容易且及时地恢复执行原始控制应用程序的状态 更改控制应用程序时发生更改。 解决方案：该控制器具有：存储旧应用程序1的HDD 47和用于控制生产装置51的控制计算机系统40中的生产装置51的新应用程序3; 以及能够执行应用程序1,3的算术部42，HDD 47还存储用于在旧的应用程序1和新的应用程序3之间切换的应用切换程序4，并且选择性地使算术部42执行一个 的他们。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2007087804A

公开(公告)日：2007-04-05

申请号：JP2005275909

申请日：2005-09-22

Applicant: Sharp Corp ,  シャープ株式会社

Inventor： KIYOUHO MASANORI ,  OKI KAZUKI ,  FURUKAWA KAZUHIKO ,  MURAKAMI KOJI

IPC: H05H1/24 ,  B01J19/08

Abstract: PROBLEM TO BE SOLVED: To provide a surface treatment method and a surface-treating apparatus capable of reducing running costs and facility costs in the surface treatment method for repelling liquid in a base material to be treated by generating plasma under atmospheric pressure. SOLUTION: The surface treatment method comprises a process for forming an electric field between a pair of opposing electrodes and generating plasma of treatment gas flowing in space in which the electric field is formed; and a surface treatment process for repelling liquid on the surface of the base material to be treated by plasma. The surface treatment process comprises surface treatment in first and second stages, and treatment gas used for the surface treatment in each stage comprises mutually different gas types or gas compositions. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供一种表面处理方法和表面处理设备，其能够降低在大气压下产生等离子体的待处理基材中排出液体的表面处理方法中的运行成本和设备成本。 解决方案：表面处理方法包括在一对相对电极之间形成电场并产生在其中形成电场的空间中流动的处理气体的等离子体的工艺; 以及用于排出待等待处理的基材表面上的液体的表面处理方法。 表面处理方法包括第一和第二阶段的表面处理，用于每个阶段的表面处理的处理气体包括相互不同的气体类型或气体组成。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2006219748A

公开(公告)日：2006-08-24

申请号：JP2005036250

申请日：2005-02-14

Applicant: Sharp Corp ,  シャープ株式会社

Inventor： SUGIYAMA AKIRA ,  KIYOUHO MASANORI ,  FURUKAWA KAZUHIKO

IPC: C23C16/26 ,  C03C23/00 ,  H05H1/24

Abstract: PROBLEM TO BE SOLVED: To provide a surface treatment method of generating plasma under the atmospheric pressure and imparting liquid repellency to a base material, where running cost is reduced, and adverse influence on the environment is reduced as well. SOLUTION: The surface treatment method involves: a stage where gas is filled between electrodes installed at prescribed intervals and confronted with each other; a stage where an electric field is imparted between the confronted electrodes, so as to generate plasma; and a stage where liquid repellency is imparted to the surface of a substrate installed on the electrode by the plasma. The above gas is composed of a fluorine-containing compound gas, gaseous helium and gaseous nitrogen. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种在大气压下产生等离子体并赋予基材的疏液性的表面处理方法，其中运行成本降低，并且对环境的不利影响也降低。 解决方案：表面处理方法包括：在按规定间隔安装并相互面对的电极之间填充气体的阶段; 在对置电极之间施加电场的阶段，以产生等离子体; 以及通过等离子体对安装在电极上的基板的表面赋予液体排斥性的阶段。 上述气体由含氟化合物气体，气态氦气和氮气组成。 版权所有（C）2006，JPO＆NCIPI