公开(公告)号：JP2005294735A

公开(公告)日：2005-10-20

申请号：JP2004111108

申请日：2004-04-05

Applicant: Sharp Corp ,  シャープ株式会社

Inventor： KIYOUHO MASANORI ,  MITANI YASUHIRO ,  NOZAKI HIROSHIGE ,  FUJIWARA TAKATO ,  NOMURA KATSUMI ,  FUKUDA KOJI ,  TOMOKAGE HIROKAZU

IPC: H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To provide a method for determining irradiated energy density of a laser beam that is not subject to variation in crystalline property of an irradiated film obtained by the influence of a change of a laser oscillator condition and the like when irradiating the laser beam to strengthen the crystalline property of the irradiated film, and a method for manufacturing a semiconductor substrate using the method as well as an apparatus for mamufacturing a semiconductor substrate using the same.
SOLUTION: Laser beams having various irradiated energy densities are radiated to an irradiated film formed on a substrate, and surface scattering optical intensities of the irradiated film are measured for respective irradiated energy densities, thus preparing energy density and surface scattering optical intensity correspondence information. Here, the correspondence information is, for example, characteristic curves of irradiated energy densities shown in the figure and surface scattering optical intensities. Based on this correspondence information, an irradiated energy density is determined from surface scattering optical intensity as a preset target value.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种用于确定通过激光振荡器状态等的变化的影响而获得的不受照射膜的结晶性变化的激光束的照射能量密度的测定方法， 照射激光束以增强照射膜的结晶性，以及使用该方法制造半导体衬底的方法以及使用该半导体衬底的半导体衬底的制造装置。 解决方案：将具有各种照射能量密度的激光束照射到形成在基板上的照射膜，并且对各照射能量密度测量照射膜的表面散射光强度，从而制备能量密度和表面散射光强度对应 信息。 这里，对应信息是例如图中所示的照射能量密度和表面散射光强度的特性曲线。 基于该对应信息，从表面散射光强度确定照射的能量密度作为预设目标值。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2005243747A

公开(公告)日：2005-09-08

申请号：JP2004048825

申请日：2004-02-24

Applicant: Sharp Corp ,  シャープ株式会社

Inventor： MITANI YASUHIRO ,  FUJIWARA TAKATO ,  NOZAKI HIROSHIGE

IPC: G02F1/1368 ,  H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To reduce the nonuniformity of crystallinity in an added part in the lengthwise direction of a laser light irradiation area when a semiconductor thin film in a larger area than a length in the lengthwise direction of the laser light irradiation area is crystallized by laser annealing. SOLUTION: When at least two lines of long laser lights 11A and 11B are added by two rows or more per line and they are directed to the surface of a semiconductor thin film 12 formed on a substrate 10, added parts 14A and 14B in at least two lines of laser lights 11A and 11B are made not to overlap in position in the lengthwise direction during irradiation. The added parts 14A and 14B of the respective lines of the laser lights 11A and 11B are adjusted, so that they may be overlaid in an area whose laser intensity E of a slope at a beam profile end in the lengthwise direction of adjoining lines is more than 20% to 80% or less. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：为了减小在比激光照射区域的长度方向上的长度大的区域中的半导体薄膜时，在激光照射区域的长度方向上的添加部分中的结晶度的不均匀性 通过激光退火结晶。 解决方案：当至少两行长激光灯11A和11B每行相加两行或更多，并且它们被引导到形成在基板10上的半导体薄膜12的表面时，添加部分14A和14B 在照射期间，至少两行激光11A和11B在长度方向上的位置不重叠。 调整激光11A，11B的各行的相加部分14A，14B，使得它们可以重叠在相邻线的长度方向的光束轮廓端的斜面的激光强度E更多的区域 超过20％至80％或更少。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2005210109A

公开(公告)日：2005-08-04

申请号：JP2004374153

申请日：2004-12-24

Applicant: Semiconductor Energy Lab Co Ltd ,  Sharp Corp ,  シャープ株式会社 ,  株式会社半導体エネルギー研究所

Inventor： ONUMA HIDETO ,  SAKAKURA MASAYUKI ,  MITANI YASUHIRO ,  MATSUO TAKUYA ,  KITAKADO HIDETO

IPC: H01L21/20 ,  H01L21/336 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method which suppresses the growth of pores in a crystalline semiconductor film.
SOLUTION: The semiconductor device manufacturing method comprises a step of forming an amorphous silicon film 3 on a substrate 1 having an insulation surface, adding a metal element such as Ni onto the amorphous silicon film 3 for accelerating the crystallization of the amorphous silicon film, heat treating the amorphous silicon film 3 to crystallize this film, thus forming a crystalline silicon film 5 on the substrate, removing a silicon oxide film formed by the heat treatment on the crystalline silicon film 5 surface with a solution containing organic solvents and a fluoride, and irradiating the crystalline silicon film 5 with a laser beam or a strong light beam.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供抑制结晶半导体膜中的孔的生长的半导体器件及其制造方法。 解决方案：半导体器件制造方法包括在具有绝缘表面的衬底1上形成非晶硅膜3的步骤，在非晶硅膜3上添加诸如Ni的金属元素以加速非晶硅的结晶化 膜，热处理非晶硅膜3以使该膜结晶，从而在基板上形成结晶硅膜5，通过含有有机溶剂的溶液和在结晶硅膜5表面上除去通过热处理形成的氧化硅膜， 并且用激光束或强光束照射结晶硅膜5。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2003309080A

公开(公告)日：2003-10-31

申请号：JP2003049796

申请日：2003-02-26

Applicant: Sharp Corp ,  シャープ株式会社

Inventor： MITANI YASUHIRO ,  VOUTSAS APOSTOLOS T ,  CROWDER MARK A

IPC: B23K26/00 ,  B23K101/36 ,  C30B13/00 ,  H01L21/20 ,  H01L21/268

CPC classification number: C30B29/06 ,  C30B13/00

Abstract: PROBLEM TO BE SOLVED: To provide a method for smoothing a laser annealed surface by using a mask having divided opening patterns and divided mask patterns. SOLUTION: The method for smoothing the laser annealed surface comprises: the steps of illuminating a laser beam having a first wavelength; melting a substrate region by using a mask having a first shielding region having an opening pattern which includes a first size and an opening pattern which includes a second size smaller than the first size, and supplying a first energy density by illuminating the laser beam having a first energy density to the substrate region; crystallizing the substrate region; illuminating the diffracted laser beam to the substrate region; and smoothing the surface of the substrate by illuminating the diffracted laser beam. The above-described mask has divided opening patterns on an LILaC region and the surface smoothed region. COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：提供一种通过使用具有分开的开口图案和分割的掩模图案的掩模来平滑激光退火表面的方法。 解决方案：用于平滑激光退火表面的方法包括：照射具有第一波长的激光束的步骤; 通过使用具有第一屏蔽区域的掩模来熔化基板区域，该掩模具有包括第一尺寸的开口图案和包括小于第一尺寸的第二尺寸的开口图案，并且通过照射具有第一尺寸的激光束来提供第一能量密度 第一能量密度到衬底区域; 使衬底区域结晶; 将衍射激光束照射到衬底区域; 以及通过照射衍射激光束来平滑基板的表面。 上述掩模在LILaC区域和表面平滑区域上划分开口图案。 版权所有（C）2004，JPO

公开(公告)号：JP2007234985A

公开(公告)日：2007-09-13

申请号：JP2006056706

申请日：2006-03-02

Applicant: Sharp Corp ,  シャープ株式会社

Inventor： MITANI YASUHIRO ,  NOZAKI HIROSHIGE ,  KUMAGAI KOICHI

IPC: H01L29/786 ,  H01L21/20 ,  H01L21/336

Abstract: PROBLEM TO BE SOLVED: To reduce the concentration of a catalyst element included in a crystalline semiconductor layer of a thin film transistor.
SOLUTION: The method for manufacturing a semiconductor device comprises: a process for preparing an amorphous semiconductor film 104a to which a catalyst element 105 for accelerating crystallization is at least partially added; a process for crystallizing at least a part of the amorphous semiconductor film 104a by treating the amorphous semiconductor film 104a by first heat treatment to obtain a crystalline semiconductor film 104p including crystalline region; a process for forming a reflection prevention layer 108 for exposing at least a part of the crystalline region on the surface of the crystalline region; a process for forming a recrystallized region 104r by recrystallizing the exposed portion out of the crystalline region by irradiating the crystalline semiconductor film 104p with a laser beam and forming a gettering region 104g including an amorphous semiconductor on the portion covered with the reflection prevention layer out of the crystalline semiconductor film 104p; and a process for moving at least a part of the catalyst element 105 in the recrystallized region to the gettering region by treating the crystalline semiconductor film 104p by second heat treatment.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：降低包括在薄膜晶体管的晶体半导体层中的催化剂元素的浓度。 解决方案：半导体器件的制造方法包括：至少部分添加用于加速结晶的催化剂元件105的非晶半导体膜104a的制造方法; 通过首先进行热处理，对非晶质半导体膜104a进行处理，使非晶质半导体膜104a的至少一部分结晶化，得到结晶性区域的结晶半导体膜104p， 用于形成用于暴露结晶区域的表面上的结晶区域的至少一部分的防反射层108的工艺; 通过用激光束照射结晶半导体膜104p将暴露部分从结晶区域中重结晶形成再结晶区域104r的工艺，并且在被反射防止层覆盖的部分上形成包括非晶半导体的吸杂区域104g 晶体半导体膜104p; 以及通过第二次热处理来处理结晶半导体膜104p，将再结晶区域中的催化剂元件105的至少一部分移动到吸气区域的工序。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2006140381A

公开(公告)日：2006-06-01

申请号：JP2004330310

申请日：2004-11-15

Applicant: Sharp Corp ,  シャープ株式会社

Inventor： MITANI YASUHIRO ,  NOZAKI HIROSHIGE ,  KUMAGAI KOICHI

IPC: H01S3/036

Abstract: PROBLEM TO BE SOLVED: To provide a laser apparatus which can emit over a long term a laser beam having stable output power. SOLUTION: The laser apparatus 1 has a housing 101 having a laser-medium storing chamber 102 for storing therein a laser-medium gas, a first laser window 104 provided in the wall surface of the housing 101, and a gas feeding device 114 for feeding the laser-medium gas to the laser-medium storing chamber 102. The laser beam generated by exciting the laser-medium gas is emitted from the first laser window 104 to the outside of the housing 101. The laser apparatus 1 has at least a pressure regulating valve 117 for regulating the inner pressure of the laser-medium storing chamber 102 in a laser oscillating state, and in the laser oscillating state, by the gas feeding device 114, the laser-medium gas is fed from the outside of the laser apparatus 1 to the laser-medium storing chamber 102. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种能够长期发射具有稳定输出功率的激光束的激光装置。 解决方案：激光装置1具有壳体101，其具有用于在其中存储激光介质气体的激光介质存储室102，设置在壳体101的壁表面中的第一激光窗口104和气体供给装置 114，用于将激光介质气体供给到激光介质存储室102.通过激发激光介质气体产生的激光束从第一激光窗口104发射到壳体101的外部。激光装置1具有 至少一个压力调节阀117用于调节激光振荡状态的激光介质存储室102的内部压力，并且在激光振荡状态下，由气体供给装置114将激光介质气体从 激光设备1到激光介质存储室102.版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2003289041A

公开(公告)日：2003-10-10

申请号：JP2003044935

申请日：2003-02-21

Applicant: Sharp Corp ,  シャープ株式会社

Inventor： MITANI YASUHIRO ,  VOUTSAS APOSTOLOS T ,  CROWDER MARK A

IPC: B23K26/06 ,  C30B13/24 ,  G03F1/00 ,  H01L21/20 ,  H01L21/268 ,  H01L21/768

CPC classification number: H01L21/768 ,  B23K26/066 ,  C30B13/24 ,  H01L21/2026

Abstract: PROBLEM TO BE SOLVED: To reduce the unevenness of crystal phase generation in laser annealing. SOLUTION: The irradiation of laser beams has slit shapes whose corners are configured of edge lines and masking patterns arranged at the corners for weakening an energy concentration with which a substrate is irradiated. The other method is provided by deforming the corners into tapered shapes like triangles. Also, the other method is provided by integrating various mask shapes into the respective corners. For example, the corners may not be provided with more than one masking pattern, or the triangular regions may not be provided with more than one masking pattern. The shapes of the masks are applied by deformation examples used for decreasing the energy concentration. COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：减少激光退火中晶相产生的不均匀性。 解决方案：激光束的照射具有狭缝形状，其角部由边缘线和布置在拐角处的掩模图案构成，以削弱照射基板的能量集中。 另一种方法是通过将角部变形为如三角形的锥形形状来提供。 而且，通过将各种掩模形状集成到各个角中来提供另一种方法。 例如，角部可以不具有多于一个的掩模图案，或者三角形区域可以不具有多于一个的掩模图案。 通过用于降低能量浓度的变形实例来应用掩模的形状。 版权所有（C）2004，JPO

公开(公告)号：JP2007103779A

公开(公告)日：2007-04-19

申请号：JP2005293656

申请日：2005-10-06

Applicant: Sharp Corp ,  シャープ株式会社

Inventor： MITANI YASUHIRO ,  NOZAKI HIROSHIGE ,  KUMAGAI KOICHI

IPC: H01S3/038 ,  H01S3/225

Abstract: PROBLEM TO BE SOLVED: To provide a discharge excitation type excimer laser that improves durability in a counter electrode (main electrode), where discharge causes heavy exhaustion, and can reduce the number of times for exchanging the main electrode. SOLUTION: In the discharge excitation type excimer laser having a pair of counter electrodes, at least one of the counter electrodes is rotatable, and the discharge surface of the counter electrode can be changed. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 解决的问题：提供一种提高对置电极（主电极）耐久性的放电激励型准分子激光器，其中放电引起严重的耗尽，并且可以减少更换主电极的次数。 解决方案：在具有一对对电极的放电激励型准分子激光器中，至少一个对向电极是可旋转的，并且可以改变对电极的放电表面。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2003282441A

公开(公告)日：2003-10-03

申请号：JP2003056372

申请日：2003-03-03

Applicant: Sharp Corp ,  シャープ株式会社

Inventor： VOUTSAS APOSTOLOS ,  MITANI YASUHIRO ,  CROWDER MARK A

IPC: G02F1/1368 ,  H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786

CPC classification number: H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/6675 ,  H01L29/78672

Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor crystal layer having a plurality of crystal characteristics, a semiconductor substrate, and a liquid crystal display panel. SOLUTION: The manufacturing method of the semiconductor crystal layer having the plurality of crystal characteristics includes a process for irradiating a first region on the semiconductor substrate with a laser beam through a first mask having a first pattern to anneal the first region, a process for carrying out growth to a first crystal state in the semiconductor layer of the first region by the annealing process of the first region, a process for annealing a second region by irradiating a second region on the semiconductor substrate with a laser beam through a second mask having a second pattern, and a process for carrying out growth to a second crystal state differing from the first one on the semiconductor layer of the second region by the annealing process of the second region. COPYRIGHT: (C)2004,JPO

Abstract translation: 解决的问题：提供具有多个晶体特性的半导体晶体层的制造方法，半导体衬底和液晶显示面板。 解决方案：具有多个晶体特性的半导体晶体层的制造方法包括用激光束照射半导体衬底上的第一区域的方法，该第一区域具有通过具有第一图案的第一掩模退火第一区域的工艺， 通过第一区域的退火处理在第一区域的半导体层中进行生长至第一晶体状态的工艺，通过第二区域的激光束照射半导体衬底上的第二区域来退火第二区域的工艺 具有第二图案的掩模，以及通过第二区域的退火处理在第二区域的半导体层上进行与第一晶体状态不同的第二晶体生长的处理。 版权所有（C）2004，JPO

公开(公告)号：JP2003273018A

公开(公告)日：2003-09-26

申请号：JP2003059248

申请日：2003-03-05

Applicant: Sharp Corp ,  シャープ株式会社

Inventor： VOUTSAS APOSTOLOS ,  CROWDER MARK A ,  MITANI YASUHIRO

IPC: B23K26/06 ,  G03F7/23 ,  H01L21/20 ,  H01L21/26 ,  H01L21/268

CPC classification number: H01L21/268 ,  B23K26/066 ,  B23K2201/40 ,  H01L21/2026 ,  Y10S430/146

Abstract: PROBLEM TO BE SOLVED: To markedly reduce a laser annealing process time related to the use of a multi-pattern mask, when a multi-pattern mask is moved relative to a substrate in the direction opposite to a certain direction.
SOLUTION: A laser irradiation method comprises a first process of exposing the semiconductor substrate to a laser beam that is radiated through the multi- pattern mask, a second process of relatively moving the mask and the substrate to an optical system in a first direction and exposing the adjacent regions of the substrate continuously to the laser beam in the prescribed first order for the corresponding mask patterns, and a third process of relatively moving the mask and the substrate to the optical system, in a second direction opposite to the first direction and exposing the adjacent regions of the substrate continuously to the laser beam irradiation in the first sequence for the corresponding mask patterns.
COPYRIGHT: (C)2003,JPO

Abstract translation: 要解决的问题：当多图案掩模相对于基板沿与某个方向相反的方向移动时，显着地减少与使用多图案掩模相关的激光退火处理时间。 解决方案：激光照射方法包括将半导体衬底暴露于通过多图案掩模辐射的激光束的第一工艺，将掩模和衬底相对移动到第一光学系统的第二工艺 方向并且以规定的一级连续地将激光束的相邻区域连续地暴露于相应的掩模图案，以及将掩模和基板相对移动到光学系统的第三过程，与第一方向相反的第二方向 方向并且以相对于掩模图案的第一序列连续地曝光基板的相邻区域到激光束照射。 版权所有（C）2003，JPO