公开(公告)号：JP2011171009A

公开(公告)日：2011-09-01

申请号：JP2010031605

申请日：2010-02-16

Applicant: Sii Nanotechnology Inc ,  エスアイアイ・ナノテクノロジー株式会社

Inventor： OGAWA TAKASHI ,  NISHINAKA KENICHI ,  SUGIYAMA YASUHIKO

IPC: H01J37/317 ,  H01J27/26 ,  H01J37/04 ,  H01J37/08 ,  H01J37/09 ,  H01J37/147

CPC classification number: H01J3/14 ,  H01J3/26

Abstract: PROBLEM TO BE SOLVED: To achieve a stable irradiation of a beam without using a complicated adjusting mechanism. SOLUTION: A focused ion beam device includes: a needle-like chip 1; a gas-supplying part including a gas nozzle 2 for an ion source and a gas supply source 3 for the ion source to supply gas to the chip 1; an extraction electrode 4 applying voltage with the chip 1 and extracting ions by ionizing the gas adsorbed onto a surface of the chip 1; an ion gun part 19 including a cathode electrode 5 accelerating ions toward a sample 13; a gun alignment electrode 9 located closer to the sample 13 than the ion gun part 19 and adjusting an irradiation direction of an ion beam 11 emitted from the ion gun part 19; and a lens system including a focusing lens electrode 6 focusing the ion beam 11 on the sample 13 and an objective lens electrode 8. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：为了实现光束的稳定照射而不使用复杂的调节机构。 解决方案：聚焦离子束装置包括：针状芯片1; 气体供给部，其包括用于离子源的气体喷嘴2和用于离子源的气体供给源3，以向芯片1供应气体; 提取电极4，利用芯片1施加电压，并通过电离吸附在芯片1的表面上的气体提取离子; 离子枪部19，其具有将离子朝向样品13加速的阴极电极5; 比离子枪部19更靠近样本13的枪对准电极9，并且调节从离子枪部19发射的离子束11的照射方向; 以及透镜系统，其包括将离子束11聚焦在样品13上的聚焦透镜电极6和物镜电极8.版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2011210494A

公开(公告)日：2011-10-20

申请号：JP2010076350

申请日：2010-03-29

Applicant: Sii Nanotechnology Inc ,  エスアイアイ・ナノテクノロジー株式会社

Inventor： OGAWA TAKASHI ,  NISHINAKA KENICHI ,  SUGIYAMA YASUHIKO

IPC: H01J37/317 ,  H01J37/04

Abstract: PROBLEM TO BE SOLVED: To confirm a tip structure of an emitter without introducing a system for FIM image acquisition.SOLUTION: A focused ion beam device which supplies gas to a chip 1, impresses voltage on an extraction electrode 4, and emits an ion beam 11 from the chip 1, is provided with a current measurement portion 111 varying voltage and measuring current volume of the ion beam 11, and a processing unit 114 performing comparison process between measurement data measured at the current measurement portion 111 and standard data. Thus the focused ion beam device inspects a chip tip structure.

Abstract translation: 要解决的问题：确定发射器的尖端结构，而不引入用于FIM图像采集的系统。解决方案：向芯片1供应气体的聚焦离子束装置，在提取电极4上施加电压，并且发射离子束 如图11所示，设置有电流测量部分111，其改变电压并测量离子束11的电流体积;以及处理单元114，执行在当前测量部分111测量的测量数据与标准数据之间的比较处理。 因此，聚焦离子束装置检查芯片尖端结构。

公开(公告)号：JP2011210492A

公开(公告)日：2011-10-20

申请号：JP2010076336

申请日：2010-03-29

Applicant: Sii Nanotechnology Inc ,  エスアイアイ・ナノテクノロジー株式会社

Inventor： NISHINAKA KENICHI ,  OGAWA TAKASHI ,  KOYAMA YOSHIHIRO

IPC: H01J37/317 ,  H01J27/26 ,  H01J37/08

CPC classification number: H01J37/08 ,  H01J37/265 ,  H01J2237/006 ,  H01J2237/0807 ,  H01J2237/0827

Abstract: PROBLEM TO BE SOLVED: To use appropriate ion species in accordance with applications by easily carrying out changeover of ion species of ion sources.SOLUTION: The focused ion beam device includes a storage part 302 storing a set temperature of a chip, gas pressure of ion-source gas, extraction voltage impressed on an extraction electrode, a set value of contrast, and a set value of brightness, an input part 106 selecting and inputting gas species, and a control part 301 reading out the set temperature corresponding to the gas species input, gas pressure, extraction voltage, the set value of contrast, and the set value of brightness from the storage part 302 and setting a heater part 1b, a gas control part 104, a voltage control part 27 and an adjustment part 303 of observation images, respectively.

Abstract translation: 要解决的问题：通过容易地进行离子源的离子种类的切换，根据应用使用合适的离子种类。解决方案：聚焦离子束装置包括存储芯片的设定温度，离子气体压力的存储部分302 源气体，施加在提取电极上的提取电压，设定的对比度值和设定的亮度值，输入部分106选择和输入气体种类，以及控制部分301读出对应于气体种类的设定温度 输入，气体压力，提取电压，对比度的设定值和来自存储部302的亮度的设定值，并设定加热器部分1b，气体控制部分104，电压控制部分27和观察的调节部分303 图像。

公开(公告)号：JP2009037910A

公开(公告)日：2009-02-19

申请号：JP2007201905

申请日：2007-08-02

Applicant: Sii Nanotechnology Inc ,  エスアイアイ・ナノテクノロジー株式会社

Inventor： MINAFUJI TAKASHI ,  OGAWA TAKASHI ,  NISHINAKA KENICHI ,  TASHIRO JUNICHI ,  SUGIYAMA YASUHIKO ,  AIDA KAZUO

IPC: H01J37/317 ,  H01J37/305

Abstract: PROBLEM TO BE SOLVED: To provide a composite charged particle beam device, in which a sample can be observed without being contaminated during a process.
SOLUTION: The composite charged particle beam device is provided with an ion beam radiation system 20 provided with a gas field ion source, an electron beam radiation system 50 of which radiation axis is disposed at 90 deg. or a smaller angle than 90 deg. to the radiation axis of the ion beam radiation system 20, a sample table 14 to support the sample at a crossing position of the ion beam 20A outputted from the ion beam radiation system 20 with the electron beam 50A outputted from the electron beam radiation system 50, and a gas gun 11 to supply function gas for deposition or etching the beam radiation position on the sample.
COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种复合带电粒子束装置，其中可以在处理期间观察样品而不被污染。 复合带电粒子束装置设置有设置有气体场离子源的离子束辐射系统20，其辐射轴设置在90度处的电子束辐射系统50。 或比90度更小的角度。 到离子束辐射系统20的辐射轴线的样品台14，用于将从离子束辐射系统20输出的离子束20A的交叉位置与从电子束辐射系统50输出的电子束50A的交叉位置支撑样品的样品台14 以及气枪11，用于提供用于沉积或蚀刻样品上的光束辐射位置的功能气体。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2011233509A

公开(公告)日：2011-11-17

申请号：JP2011044290

申请日：2011-03-01

Applicant: Mie Univ ,  Sii Nanotechnology Inc ,  エスアイアイ・ナノテクノロジー株式会社 ,  国立大学法人三重大学

Inventor： SUGIYAMA YASUHIKO ,  OGAWA TAKASHI ,  NISHINAKA KENICHI ,  HATA KOICHI

IPC: H01J27/26 ,  H01J37/08 ,  H01J37/317

Abstract: PROBLEM TO BE SOLVED: To provide a focused ion beam device which exhibits high throughput of sample processing by increasing the amount of ion beam used for irradiating a sample.SOLUTION: In the emitter of a field ionization type ion source which emits an ion beam 7 by field ionizing gas supplied to the emitter 1 with an electric field formed at the tip thereof, the tip of the emitter 1 consists of a protrusion 1c of atomic level, a spherical part having a protrusion, and a columnar portion continuous to the spherical part and having a slope angle. The spherical part has a radius of curvature of 110 nm or more and a slope angle of 15° or less in the focused ion beam device including the emitter of the field ionization type ion source.

Abstract translation: 要解决的问题：提供一种聚焦离子束装置，其通过增加用于照射样品的离子束的量显示出高的样品处理通过量。 解决方案：在场电离型离子源的发射极中，通过在其尖端形成电场的场致电离气体发射离子束7，发射体1的前端由突起 1c，具有突起的球形部分和与球形部分连续并具有倾斜角的柱状部分。 在包括场电离型离子源的发射极的聚焦离子束装置中，球面的曲率半径为110nm以上，倾斜角为15°以下。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2010205426A

公开(公告)日：2010-09-16

申请号：JP2009046366

申请日：2009-02-27

Applicant: Sii Nanotechnology Inc ,  エスアイアイ・ナノテクノロジー株式会社

Inventor： OGAWA TAKASHI ,  NISHINAKA KENICHI ,  KOYAMA YOSHIHIRO

IPC: H01J27/26 ,  H01J37/08 ,  H01J37/317

CPC classification number: H01J37/08 ,  H01J37/28 ,  H01J2237/0807 ,  H01J2237/31749

Abstract: PROBLEM TO BE SOLVED: To accurately comprehend an emitter crystal structure from an FIM image without being influenced by disturbances such as contamination, and also to judge whether the emitter crystal structure returns to an original status correctly or not even when atom rearrangement is carried out. SOLUTION: A focused ion beam apparatus is provided with an emitter 10, a gas source 11 to supply gas G2, a cooling portion 12 to cool down the emitter, a heating portion 13 to heat a tip of the emitter, an extraction power source portion 15 to extract gas by making the same into gas ion at the emitter tip by impressing an extraction voltage, a beam optical system 16 to irradiate focused ion beams (FIB) to a sample S after making the gas ion into the FIB, an image acquisition mechanism 17 to acquire an FIM image at the emitter tip and, a control portion 7 which has a display portion and a memory portion 7b. The memory portion has a guide memorized in advance to display an ideal crystal structure at the emitter tip, and capable of displaying to the display portion by overlapping the guide on the FIM image acquired by the control portion. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：为了从FIM图像中准确地理解发射极晶体结构，不受污染等干扰的影响，并且即使原子重排为原子重排，也可以判断发射极晶体结构是否正确返回到原始状态 执行。 解决方案：聚焦离子束装置设置有发射极10，供应气体G2的气体源11，冷却发射极的冷却部分12，加热发射极尖端的加热部分13， 电源部分15，通过施加提取电压将其制成发射极尖端的气体离子来提取气体;光束光学系统16，用于在使气体离子进入FIB之后将聚焦离子束（FIB）照射到样品S; 用于获取发射极尖端处的FIM图像的图像获取机构17，以及具有显示部分和存储部分7b的控制部分7。 存储部具有预先存储的引导件，以在发射极尖端处显示理想的晶体结构，并且能够通过使由控制部分获取的FIM图像上的引导重叠而向显示部分显示。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2011210496A

公开(公告)日：2011-10-20

申请号：JP2010076353

申请日：2010-03-29

Applicant: Sii Nanotechnology Inc ,  エスアイアイ・ナノテクノロジー株式会社

Inventor： NISHINAKA KENICHI ,  OGAWA TAKASHI ,  SUGIYAMA YASUHIKO

IPC: H01J37/04 ,  H01J37/317

Abstract: PROBLEM TO BE SOLVED: To confirm a tip structure of an emitter, without introducing a system for obtaining FIM image.SOLUTION: The focused ion beam device, including a gas supply part supplying gas to a chip 1, an extraction electrode 4 extracting ion beams 11, and a gun alignment electrode 9 adjusting irradiation directions of the ion beams 11, is also provided with an aperture 10 equipped with an opening 10a for passing ion beams emitted from one atom at a tip of the chip 1, and a current measurement part measuring a current volume of the ion beams 11 passing the opening 10a.

Abstract translation: 要解决的问题：确定发射器的尖端结构，而不引入用于获得FIM图像的系统。解决方案：聚焦离子束装置包括向芯片1供应气体的气体供应部分，提取离子束 如图11所示，并且调整离子束11的照射方向的枪对准电极9还设置有孔10，孔10配备有用于使从芯片1的前端的一个原子发射的离子束的通路10a和电流测量部 测量通过开口10a的离子束11的当前体积。

公开(公告)号：JP2011210493A

公开(公告)日：2011-10-20

申请号：JP2010076349

申请日：2010-03-29

Applicant: Sii Nanotechnology Inc ,  エスアイアイ・ナノテクノロジー株式会社

Inventor： OGAWA TAKASHI ,  NISHINAKA KENICHI ,  SUGIYAMA YASUHIKO

IPC: H01J37/248 ,  H01J37/317

Abstract: PROBLEM TO BE SOLVED: To aim at regeneration of a pyramid structure of a tip of a chip without taking it out from a charged particle beam device.SOLUTION: The charged particle beam device is provided with: a needle-like chip 1; a gas supply unit supplying gas to the chip 1; an extraction electrode 4 for extracting an ion beam by ionizing a gas adsorbed on a chip surface; a voltage supply unit 27 impressing voltage between the chip 1 and the extraction electrode 4; and a chip regeneration electrode equipped with the same metal as that of the chip surface, on a surface where the ion beam is irradiated.

Abstract translation: 要解决的问题：为了从芯片尖端的金字塔结构的再生而不从带电粒子束装置中取出的目的，为了目的，本发明提供了一种带状粒子束装置。 将气体供给到芯片1的气体供给单元; 用于通过电离吸附在芯片表面上的气体来提取离子束的提取电极4; 施加在芯片1和引出电极4之间的电压的电压供给单元27; 以及在照射离子束的表面上配备与芯片表面相同的金属的芯片再生电极。

公开(公告)号：JP2011171008A

公开(公告)日：2011-09-01

申请号：JP2010031602

申请日：2010-02-16

Applicant: Sii Nanotechnology Inc ,  エスアイアイ・ナノテクノロジー株式会社

Inventor： OGAWA TAKASHI ,  NISHINAKA KENICHI ,  KOYAMA YOSHIHIRO

IPC: H01J37/317 ,  H01J27/26 ,  H01J37/04 ,  H01J37/08 ,  H01J37/09 ,  H01J37/147

CPC classification number: H01J37/08 ,  H01J2237/0451 ,  H01J2237/0458 ,  H01J2237/0807 ,  H01J2237/083 ,  H01J2237/24535 ,  H01J2237/28 ,  H01J2237/31749

Abstract: PROBLEM TO BE SOLVED: To achieve a stable irradiation of a beam without using a complicated adjusting mechanism.
SOLUTION: A focused ion beam device includes: a needle-like chip 1; a gas-supplying part including a gas nozzle 2 for an ion source and a gas supply source 3 for the ion source to supply gas to the chip 1; an extraction electrode 4 applying voltage with the chip 1 and extracting ions by ionizing the gas adsorbed onto a surface of the chip 1; an ion gun part 19 including a cathode electrode 5 accelerating ions toward a sample 13; a second aperture 10 arranged between the ion gun part 19 and a lens system; and the lens system including a focusing lens electrode 6 focusing an ion beam 11 on the sample 13 and an objective lens electrode 8.
COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：为了实现光束的稳定照射而不使用复杂的调节机构。 解决方案：聚焦离子束装置包括：针状芯片1; 气体供给部，其包括用于离子源的气体喷嘴2和用于离子源的气体供给源3，以向芯片1供应气体; 提取电极4，利用芯片1施加电压，并通过电离吸附在芯片1的表面上的气体提取离子; 离子枪部19，其具有将离子朝向样品13加速的阴极电极5; 布置在离子枪部分19和透镜系统之间的第二孔10; 并且透镜系统包括将离子束11聚焦在样品13上的聚焦透镜电极6和物镜电极8.版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2008234874A

公开(公告)日：2008-10-02

申请号：JP2007069336

申请日：2007-03-16

Applicant: Sii Nanotechnology Inc ,  エスアイアイ・ナノテクノロジー株式会社

Inventor： NAKAGAWA YOSHITOMO ,  NISHINAKA KENICHI

IPC: H01J37/317 ,  H01J27/16 ,  H01J37/08

CPC classification number: H01J37/08 ,  H01J37/28 ,  H01J2237/006 ,  H01J2237/061 ,  H01J2237/0817 ,  H01J2237/182 ,  H01J2237/188 ,  H01J2237/31749

Abstract: PROBLEM TO BE SOLVED: To provide a focused ion beam device capable of thinly focusing a beam diameter and changing an ion beam current in a wide range.
SOLUTION: The focused ion beam device comprises: a plasma generator 3 having a plasma torch 2 which maintains plasma in the inside and makes the plasma flow in the inside; a differential exhaust chamber 5 connecting with the plasma torch via a torch orifice 4 and making the plasma flow out from the torch orifice 4 into a supersonic flow by means of adiabatic expansion; a pulling-out orifice 6 arranged at a position facing to the torch orifice of the differential exhaust chamber and pulling out an ion from the plasma made as the supersonic flow; a pulling-out electrode 7 for pulling out the ion passing through the pulling-out orifice by further electrostatically accelerating the ion; and an ion optical system 13 for making the ion pulled out from the pulling-out orifice made incident into a workpiece 15 by focusing the ion while adding an ion-optical operation.
COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种聚焦离子束装置，其能够在宽范围内使束直径和离子束电流变化很小。 聚焦离子束装置包括：具有等离子体焰炬2的等离子体发生器3，其将等离子体保持在内部并使等离子体在内部流动; 通过焊炬孔4与等离子体焰炬连接并使等离子体通过绝热膨胀从喷枪孔4流出到超音速流动的差动排气室5; 布置在面对差速器排气室的割炬孔的位置并从作为超音速流动的等离子体中取出离子的抽出孔6; 拉出电极7，用于通过进一步静电加速离子来拉出通过拔出孔的离子; 以及离子光学系统13，用于通过在添加离子光学操作的同时聚焦离子而将从引出孔拉出的离子入射到工件15中。 版权所有（C）2009，JPO＆INPIT