公开(公告)号：JP2011171009A

公开(公告)日：2011-09-01

申请号：JP2010031605

申请日：2010-02-16

Applicant: Sii Nanotechnology Inc ,  エスアイアイ・ナノテクノロジー株式会社

Inventor： OGAWA TAKASHI ,  NISHINAKA KENICHI ,  SUGIYAMA YASUHIKO

IPC: H01J37/317 ,  H01J27/26 ,  H01J37/04 ,  H01J37/08 ,  H01J37/09 ,  H01J37/147

CPC classification number: H01J3/14 ,  H01J3/26

Abstract: PROBLEM TO BE SOLVED: To achieve a stable irradiation of a beam without using a complicated adjusting mechanism. SOLUTION: A focused ion beam device includes: a needle-like chip 1; a gas-supplying part including a gas nozzle 2 for an ion source and a gas supply source 3 for the ion source to supply gas to the chip 1; an extraction electrode 4 applying voltage with the chip 1 and extracting ions by ionizing the gas adsorbed onto a surface of the chip 1; an ion gun part 19 including a cathode electrode 5 accelerating ions toward a sample 13; a gun alignment electrode 9 located closer to the sample 13 than the ion gun part 19 and adjusting an irradiation direction of an ion beam 11 emitted from the ion gun part 19; and a lens system including a focusing lens electrode 6 focusing the ion beam 11 on the sample 13 and an objective lens electrode 8. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：为了实现光束的稳定照射而不使用复杂的调节机构。 解决方案：聚焦离子束装置包括：针状芯片1; 气体供给部，其包括用于离子源的气体喷嘴2和用于离子源的气体供给源3，以向芯片1供应气体; 提取电极4，利用芯片1施加电压，并通过电离吸附在芯片1的表面上的气体提取离子; 离子枪部19，其具有将离子朝向样品13加速的阴极电极5; 比离子枪部19更靠近样本13的枪对准电极9，并且调节从离子枪部19发射的离子束11的照射方向; 以及透镜系统，其包括将离子束11聚焦在样品13上的聚焦透镜电极6和物镜电极8.版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2007200648A

公开(公告)日：2007-08-09

申请号：JP2006016159

申请日：2006-01-25

Applicant: Sii Nanotechnology Inc ,  エスアイアイ・ナノテクノロジー株式会社

Inventor： OGAWA TAKASHI ,  MUTO HIROTO

IPC: H01J37/16 ,  H01J37/18

CPC classification number: H01J37/02 ,  H01J37/16 ,  H01J37/185 ,  H01J2237/022 ,  H01J2237/12 ,  H01J2237/31749

Abstract: PROBLEM TO BE SOLVED: To provide a charged particle beam device capable of preventing a minute quantity of dust from adhering to an electrostatic lens being an object lens, and of applying a high voltage to the electrostatic lens.
SOLUTION: This charged particle beam device 1 is provided with: a chamber 2 capable of evacuating the inside 2a thereof by an in-chamber evacuation means 4; and a lens barrel 3 for irradiating a sample S arranged in the inside 2a of the chamber 2 with a charged particle beam B1. The lens barrel 3 is provided with: a cylindrical body 5 with an irradiation opening 6 for emitting the charged particle beam B1 formed therein; a charged particle beam supply part 7 housed on the side of a base end 5c in the inside 5b of the cylindrical body 5 for emitting the charged particle beam B1; and an object lens 11 housed on the side of a tip 5a of the inside 5b of the cylindrical body 5, and having the electrostatic lens for generating an electric field to focus the charged particle beam B1 emitted from the charged particle beam supply part 7. In the cylindrical body 5 of the lens barrel 3, a gas supply means 12 capable of supplying gas G to the inside 5b of the cylindrical body 5 is arranged on the base end side of the object lens 11.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供一种能够防止少量灰尘粘附到作为物镜的静电透镜并且向静电透镜施加高电压的带电粒子束装置。 解决方案：该带电粒子束装置1设置有：能够通过室内排气装置4将其内部2a排出的室2; 以及透镜筒3，用于用带电粒子束B1照射布置在室2的内部2a中的样品S. 透镜筒3设置有：具有用于发射其中形成的带电粒子束B1的照射开口6的圆柱体5; 收容在筒状体5的内侧5b的基端5c侧的带电粒子束供给部7，用于发射带电粒子束B1; 以及容纳在筒状体5的内侧5b的前端5a侧的物镜11，并且具有用于产生电场的静电透镜以聚焦从带电粒子束供给部7发射的带电粒子束B1的物镜11。 在透镜筒3的筒状体5中，在物镜11的基端侧配置能够向圆筒体5的内部5b供给气体G的气体供给单元12。 ）2007，JPO＆INPIT

公开(公告)号：JP2005243833A

公开(公告)日：2005-09-08

申请号：JP2004050296

申请日：2004-02-25

Applicant: Sii Nanotechnology Inc ,  エスアイアイ・ナノテクノロジー株式会社

Inventor： OGAWA TAKASHI

IPC: H01L21/66 ,  G01N23/225 ,  G01R31/02 ,  G01R31/28 ,  G01R31/307

CPC classification number: G01R31/307 ,  G01N23/225

Abstract: PROBLEM TO BE SOLVED: To provide a method and a system for inspecting a semiconductor by which the continuity etc., of circuit elements in a semiconductor device can be inspected by observation by a scanning charged particle microscope such as the electronic microscope etc., without performing such troublesome work as the random access operation of a probe.
SOLUTION: An electronic circuit is inspected by observing contrast changes on the surface of a sample of a semiconductor device when the surface is highly electrified by irradiating an electron beam or an ion beam of positive charge upon the surface, and when an ion beam of reversely-charged positive charge or the electron beam is irradiated upon the surface in the desired pattern of an area showing a highly charged state by using a composite device provided with an electron lens barrel 2, an ion beam lens barrel 1, and a secondary charged particle detector 4.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种用于检查半导体装置中的电路元件的连续性等的半导体的方法和系统，其可以通过诸如电子显微镜等的扫描带电粒子显微镜观察来检查 不需要像探头的随机存取操作那样麻烦的工作。 解决方案：当通过在表面上照射电子束或正电荷的离子束使表面高度带电时，通过观察半导体器件的样品的表面上的对比度变化来检查电子电路，并且当离子 通过使用设置有电子透镜镜筒2，离子束透镜镜筒1和复合装置的复合装置，以反充电正电荷的光束或电子束以表现高充电状态的区域的所需图案照射在表面上 二次带电粒子检测器4.版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2005243275A

公开(公告)日：2005-09-08

申请号：JP2004047933

申请日：2004-02-24

Applicant: Sii Nanotechnology Inc ,  エスアイアイ・ナノテクノロジー株式会社

Inventor： OI MASAMICHI ,  OGAWA TAKASHI

IPC: H01J37/28 ,  H01J37/305 ,  H01J37/317 ,  H01L21/66

CPC classification number: H01L22/26 ,  H01J37/28 ,  H01J37/3056 ,  H01J2237/31749

Abstract: PROBLEM TO BE SOLVED: To provide a system equipped with an FIB lens barrel and an SEM lens barrel of which the secondary electron emitted from the FIB is prevented from being turned into noise for an SEM detection signal when observing a process implementing FIB work in real time by an SEM.
SOLUTION: The device equipped with the FIB lens barrel and the SEM lens barrel has a slit formed into a shape to be worked at an aperture of the FIB. By this, ion beam work is performed by transferring a pattern on the surface a sample, not by scanning a converged ion beam thereon.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种配备有FIB透镜镜筒和SEM镜筒的系统，当观察执行FIB的处理时，防止从FIB发射的二次电子被转换成用于SEM检测信号的噪声 通过SEM实时工作。 解决方案：配备有FIB透镜镜筒和SEM透镜镜筒的装置具有形成为在FIB的孔径处被加工的形状的狭缝。 由此，通过在表面上传送图案而不是通过在其上扫描会聚的离子束来进行离子束加工。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2005135611A

公开(公告)日：2005-05-26

申请号：JP2003367445

申请日：2003-10-28

Applicant: Sii Nanotechnology Inc ,  エスアイアイ・ナノテクノロジー株式会社

Inventor： OGAWA TAKASHI ,  OI MASAMICHI ,  KOYAMA YOSHIHIRO

IPC: G21K5/04 ,  G01T1/20 ,  G01T1/28 ,  H01J37/20 ,  H01J37/244 ,  H01J37/28 ,  H01J37/317

Abstract: PROBLEM TO BE SOLVED: To provide a complex type charged particle beam device capable of obtaining necessary detection signals in both detection units, by balancing the influence that retracting electric fields for detecting secondary ions and secondary electrons with different charges have upon each other. SOLUTION: The complex type charged particle beam device installed with both a secondary ion detecting unit 2 and a secondary electron detecting unit 1 is provided with a means for detecting detection signal levels of the secondary ion detecting unit 2 and the secondary electron detecting unit 1 so as to be able to obtain at the same time in good balance signals of the both units 2, 1, and a means equipped with an impression voltage varying means 6 at retracting electrodes 3n, 3p of the secondary ion detecting units 2 and the secondary electron detecting unit 1 for controlling the impression voltage varying means 6 based on the detection signal levels. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：为了提供能够在两个检测单元中获得必要的检测信号的复合型带电粒子束装置，通过平衡用于检测次级离子的回收电场和不同电荷的二次电子的影响彼此平衡 。 解决方案：安装有二次离子检测单元2和二次电子检测单元1的复合型带电粒子束装置设置有用于检测二次离子检测单元2的检测信号电平和二次电子检测的装置 单元1，以便能够同时获得两个单元2,2的良好平衡信号，以及在二次离子检测单元2的回缩电极3n，3p处配备有压印电压变化单元6的单元，以及 二次电子检测单元1，用于基于检测信号电平来控制压印电压变化装置6。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2011210492A

公开(公告)日：2011-10-20

申请号：JP2010076336

申请日：2010-03-29

Applicant: Sii Nanotechnology Inc ,  エスアイアイ・ナノテクノロジー株式会社

Inventor： NISHINAKA KENICHI ,  OGAWA TAKASHI ,  KOYAMA YOSHIHIRO

IPC: H01J37/317 ,  H01J27/26 ,  H01J37/08

CPC classification number: H01J37/08 ,  H01J37/265 ,  H01J2237/006 ,  H01J2237/0807 ,  H01J2237/0827

Abstract: PROBLEM TO BE SOLVED: To use appropriate ion species in accordance with applications by easily carrying out changeover of ion species of ion sources.SOLUTION: The focused ion beam device includes a storage part 302 storing a set temperature of a chip, gas pressure of ion-source gas, extraction voltage impressed on an extraction electrode, a set value of contrast, and a set value of brightness, an input part 106 selecting and inputting gas species, and a control part 301 reading out the set temperature corresponding to the gas species input, gas pressure, extraction voltage, the set value of contrast, and the set value of brightness from the storage part 302 and setting a heater part 1b, a gas control part 104, a voltage control part 27 and an adjustment part 303 of observation images, respectively.

Abstract translation: 要解决的问题：通过容易地进行离子源的离子种类的切换，根据应用使用合适的离子种类。解决方案：聚焦离子束装置包括存储芯片的设定温度，离子气体压力的存储部分302 源气体，施加在提取电极上的提取电压，设定的对比度值和设定的亮度值，输入部分106选择和输入气体种类，以及控制部分301读出对应于气体种类的设定温度 输入，气体压力，提取电压，对比度的设定值和来自存储部302的亮度的设定值，并设定加热器部分1b，气体控制部分104，电压控制部分27和观察的调节部分303 图像。

公开(公告)号：JP2009037910A

公开(公告)日：2009-02-19

申请号：JP2007201905

申请日：2007-08-02

Applicant: Sii Nanotechnology Inc ,  エスアイアイ・ナノテクノロジー株式会社

Inventor： MINAFUJI TAKASHI ,  OGAWA TAKASHI ,  NISHINAKA KENICHI ,  TASHIRO JUNICHI ,  SUGIYAMA YASUHIKO ,  AIDA KAZUO

IPC: H01J37/317 ,  H01J37/305

Abstract: PROBLEM TO BE SOLVED: To provide a composite charged particle beam device, in which a sample can be observed without being contaminated during a process.
SOLUTION: The composite charged particle beam device is provided with an ion beam radiation system 20 provided with a gas field ion source, an electron beam radiation system 50 of which radiation axis is disposed at 90 deg. or a smaller angle than 90 deg. to the radiation axis of the ion beam radiation system 20, a sample table 14 to support the sample at a crossing position of the ion beam 20A outputted from the ion beam radiation system 20 with the electron beam 50A outputted from the electron beam radiation system 50, and a gas gun 11 to supply function gas for deposition or etching the beam radiation position on the sample.
COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种复合带电粒子束装置，其中可以在处理期间观察样品而不被污染。 复合带电粒子束装置设置有设置有气体场离子源的离子束辐射系统20，其辐射轴设置在90度处的电子束辐射系统50。 或比90度更小的角度。 到离子束辐射系统20的辐射轴线的样品台14，用于将从离子束辐射系统20输出的离子束20A的交叉位置与从电子束辐射系统50输出的电子束50A的交叉位置支撑样品的样品台14 以及气枪11，用于提供用于沉积或蚀刻样品上的光束辐射位置的功能气体。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2006309952A

公开(公告)日：2006-11-09

申请号：JP2005127524

申请日：2005-04-26

Applicant: Sii Nanotechnology Inc ,  エスアイアイ・ナノテクノロジー株式会社

Inventor： OGAWA TAKASHI

IPC: H01J37/317 ,  H01J37/28

CPC classification number: G01N23/225 ,  H01J2237/31745

Abstract: PROBLEM TO BE SOLVED: To provide a composite charged particle beam device in which damage due to ion beam irradiation is reduced by aligning an electron beam and an ion beam using minimum ion beam irradiation, and further to provide a composite charged particle beam device which allows an irradiation position to be determined by electron beam irradiation even in an ion beam irradiation where it is difficult to determine the position using ion microscopic observation.
SOLUTION: In the composite device which comprises a SEM lens-barrel 2, a FIB lens-barrel 1, and a secondary electron detector 4; the electron beam is scanned from the SEM lens-barrel on a sample plane, a negative electrical charge is electrified on the sample plane, and its microscope image (an SEM image) is observed. If a positive ion is irradiated from the FIB lens-barrel in the charged region while observing, a contrast change appears in an FIB irradiation position. The FIB irradiation position can be determined by measuring the position of the contrast change.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供一种复合带电粒子束装置，其中通过使用最小离子束照射对准电子束和离子束而减小由于离子束照射造成的损伤，并且还提供复合带电粒子束 即使在使用离子显微镜观察难以确定位置的离子束照射下，也能够通过电子束照射来确定照射位置的装置。 解决方案：在包括SEM透镜镜筒2，FIB透镜镜筒1和二次电子探测器4的复合装置中， 电子束在样品平面上从SEM透镜镜筒扫描，在样品平面上带电负电荷，并观察其显微镜图像（SEM图像）。 如果在观察时从带电区域的FIB透镜镜筒照射正离子，则在FIB照射位置出现对比度变化。 可以通过测量对比度变化的位置来确定FIB照射位置。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2011210496A

公开(公告)日：2011-10-20

申请号：JP2010076353

申请日：2010-03-29

Applicant: Sii Nanotechnology Inc ,  エスアイアイ・ナノテクノロジー株式会社

Inventor： NISHINAKA KENICHI ,  OGAWA TAKASHI ,  SUGIYAMA YASUHIKO

IPC: H01J37/04 ,  H01J37/317

Abstract: PROBLEM TO BE SOLVED: To confirm a tip structure of an emitter, without introducing a system for obtaining FIM image.SOLUTION: The focused ion beam device, including a gas supply part supplying gas to a chip 1, an extraction electrode 4 extracting ion beams 11, and a gun alignment electrode 9 adjusting irradiation directions of the ion beams 11, is also provided with an aperture 10 equipped with an opening 10a for passing ion beams emitted from one atom at a tip of the chip 1, and a current measurement part measuring a current volume of the ion beams 11 passing the opening 10a.

Abstract translation: 要解决的问题：确定发射器的尖端结构，而不引入用于获得FIM图像的系统。解决方案：聚焦离子束装置包括向芯片1供应气体的气体供应部分，提取离子束 如图11所示，并且调整离子束11的照射方向的枪对准电极9还设置有孔10，孔10配备有用于使从芯片1的前端的一个原子发射的离子束的通路10a和电流测量部 测量通过开口10a的离子束11的当前体积。

公开(公告)号：JP2011210493A

公开(公告)日：2011-10-20

申请号：JP2010076349

申请日：2010-03-29

Applicant: Sii Nanotechnology Inc ,  エスアイアイ・ナノテクノロジー株式会社

Inventor： OGAWA TAKASHI ,  NISHINAKA KENICHI ,  SUGIYAMA YASUHIKO

IPC: H01J37/248 ,  H01J37/317

Abstract: PROBLEM TO BE SOLVED: To aim at regeneration of a pyramid structure of a tip of a chip without taking it out from a charged particle beam device.SOLUTION: The charged particle beam device is provided with: a needle-like chip 1; a gas supply unit supplying gas to the chip 1; an extraction electrode 4 for extracting an ion beam by ionizing a gas adsorbed on a chip surface; a voltage supply unit 27 impressing voltage between the chip 1 and the extraction electrode 4; and a chip regeneration electrode equipped with the same metal as that of the chip surface, on a surface where the ion beam is irradiated.

Abstract translation: 要解决的问题：为了从芯片尖端的金字塔结构的再生而不从带电粒子束装置中取出的目的，为了目的，本发明提供了一种带状粒子束装置。 将气体供给到芯片1的气体供给单元; 用于通过电离吸附在芯片表面上的气体来提取离子束的提取电极4; 施加在芯片1和引出电极4之间的电压的电压供给单元27; 以及在照射离子束的表面上配备与芯片表面相同的金属的芯片再生电极。