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    Focused ion beam device
    6.
    发明专利
    Focused ion beam device 审中-公开
    聚焦离子束装置

    公开(公告)号：JP2011171009A

    公开(公告)日：2011-09-01

    申请号：JP2010031605

    申请日：2010-02-16

    Applicant: Sii Nanotechnology Inc ,  エスアイアイ・ナノテクノロジー株式会社

    Inventor： OGAWA TAKASHI ,  NISHINAKA KENICHI ,  SUGIYAMA YASUHIKO

    IPC: H01J37/317 ,  H01J27/26 ,  H01J37/04 ,  H01J37/08 ,  H01J37/09 ,  H01J37/147

    CPC classification number: H01J3/14 ,  H01J3/26

    Abstract: PROBLEM TO BE SOLVED: To achieve a stable irradiation of a beam without using a complicated adjusting mechanism. SOLUTION: A focused ion beam device includes: a needle-like chip 1; a gas-supplying part including a gas nozzle 2 for an ion source and a gas supply source 3 for the ion source to supply gas to the chip 1; an extraction electrode 4 applying voltage with the chip 1 and extracting ions by ionizing the gas adsorbed onto a surface of the chip 1; an ion gun part 19 including a cathode electrode 5 accelerating ions toward a sample 13; a gun alignment electrode 9 located closer to the sample 13 than the ion gun part 19 and adjusting an irradiation direction of an ion beam 11 emitted from the ion gun part 19; and a lens system including a focusing lens electrode 6 focusing the ion beam 11 on the sample 13 and an objective lens electrode 8. COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 要解决的问题：为了实现光束的稳定照射而不使用复杂的调节机构。 解决方案：聚焦离子束装置包括：针状芯片1; 气体供给部，其包括用于离子源的气体喷嘴2和用于离子源的气体供给源3，以向芯片1供应气体; 提取电极4，利用芯片1施加电压，并通过电离吸附在芯片1的表面上的气体提取离子; 离子枪部19，其具有将离子朝向样品13加速的阴极电极5; 比离子枪部19更靠近样本13的枪对准电极9，并且调节从离子枪部19发射的离子束11的照射方向; 以及透镜系统，其包括将离子束11聚焦在样品13上的聚焦透镜电极6和物镜电极8.版权所有（C）2011，JPO＆INPIT

    Particle beam irradiation apparatus and a particle beam therapy system
    7.
    发明专利
    Particle beam irradiation apparatus and a particle beam therapy system 有权

    公开(公告)号：JP4673450B1

    公开(公告)日：2011-04-20

    申请号：JP2010543241

    申请日：2010-08-20

    Applicant: 三菱電機株式会社

    Inventor： 雅 片寄

    IPC: A61N5/10

    CPC classification number: A61N5/1077 ,  A61N5/1043 ,  A61N2005/1087 ,  G21K5/02 ,  H01J3/26

    Abstract: The objective is to obtain a particle beam irradiation apparatus that can perform in a changeable manner the combination of a plurality of parameters in particle beam irradiation, such as the combination of irradiation fields and irradiation position accuracies, and that can perform diverse-variation irradiation. The particle beam irradiation apparatus (58) irradiates a charged particle beam (3) accelerated by a accelerator (54) onto an irradiation subject (11); the particle beam irradiation apparatus (58) includes a scanning electromagnet (1, 2) that scans the charged particle beam (3), and a scanning electromagnet moving apparatus (4) that moves the scanning electromagnet (1, 2) in such a way as to change the distance between the scanning electromagnet (1, 2) and the irradiation subject (11) in the beam axis direction of the charged particle beam (3).

    Operation temperature adjustment method of cathode and lithography device
    8.
    发明专利
    Operation temperature adjustment method of cathode and lithography device 有权
    CATHODE和LITHOGRAPHY设备的操作温度调节方法

    公开(公告)号：JP2014165075A

    公开(公告)日：2014-09-08

    申请号：JP2013036257

    申请日：2013-02-26

    Applicant: Nuflare Technology Inc ,  株式会社ニューフレアテクノロジー

    Inventor： MIYAMOTO FUSAO

    IPC: H01J37/04 ,  G03F7/20 ,  H01J37/06 ,  H01J37/305 ,  H01L21/027

    CPC classification number: H01J37/304 ,  B82Y10/00 ,  B82Y40/00 ,  H01J3/26 ,  H01J37/06 ,  H01J37/07 ,  H01J37/3174 ,  H01J2237/0653 ,  H01J2237/24585 ,  H01J2237/30461

    Abstract: PROBLEM TO BE SOLVED: To provide a method of optimizing a cathode temperature of an electron gun in a short time when regulating an emission current in order to obtain a desired current density.SOLUTION: An operation temperature adjustment method of a cathode includes the steps of: acquiring an approximation formula approximating a correlation between an emission current value and an operation temperature of the cathode; measuring a current density of an electron beam emitted from the cathode in the state where an n-th emission current value and an n-th operation temperature of the cathode are set to an electron beam source; determining whether the measured current density is within an allowable range; changing the set n-th emission current value into an (n+1)th emission current value in the case where the current density is not within the allowable range; and using the approximation formula to compute an operation temperature of the cathode corresponding to the (n+1)th emission current value and setting the computed operation temperature to the electron beam source as an (n+1)th operation temperature of the cathode.

    Abstract translation: 要解决的问题：提供一种在调节发射电流时在短时间内优化电子枪的阴极温度以获得期望的电流密度的方法。解决方案：阴极的操作温度调节方法包括以下步骤： 获取逼近发射电流值与阴极的工作温度之间的相关性的近似公式; 在将阴极的第n发射电流值和第n工作温度设定为电子束源的状态下，测量从阴极发射的电子束的电流密度; 确定所测量的电流密度是否在容许范围内; 在电流密度不在容许范围的情况下，将第n次发射电流值改变为第（n + 1）发射电流值; 并且使用近似公式来计算对应于第（n + 1）个发射电流值的阴极的操作温度，并将计算出的工作温度设置为电子束源作为阴极的第（n + 1）个操作温度。

    Charged particle beam lithography apparatus, and article manufacturing method
    10.
    发明专利
    Charged particle beam lithography apparatus, and article manufacturing method 有权
    充电颗粒光束光刻设备及其制造方法

    公开(公告)号：JP2012114123A

    公开(公告)日：2012-06-14

    申请号：JP2010259523

    申请日：2010-11-19

    Applicant: Canon Inc ,  キヤノン株式会社

    Inventor： ITO HIROHITO

    IPC: H01L21/027

    CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J3/26 ,  H01J37/3177 ,  H01J2237/304 ,  H01J2237/31766

    Abstract: PROBLEM TO BE SOLVED: To provide a technique advantageous to achieve high throughput with a reduced buffer memory capacity in a charged particle beam lithography apparatus.SOLUTION: A charged particle beam lithography apparatus includes a deflector for deflecting a charged particle beam and a stage mechanism for driving a substrate. The deflector scans the charged particle beam in a main scanning direction, and the stage mechanism scans the substrate in a sub-scanning direction, so that a pattern is drawn on the substrate. The charged particle beam lithography apparatus further includes: a blanker unit for controlling irradiating or not irradiating the substrate with the charged particle beam; and a control unit for controlling, when the drawing on the substrate is resumed after suspended in a state the stage mechanism drives the substrate in the sub-scanning direction, the deflector to deflect the charged particle beam in the sub-scanning direction, by the drive amount of the substrate by the stage mechanism in the sub-scanning direction during a period from the suspension to the resumption of the drawing.

    Abstract translation: 要解决的问题：提供一种有利于在带电粒子束光刻设备中以减小的缓冲存储器容量实现高吞吐量的技术。 解决方案：带电粒子束光刻设备包括用于偏转带电粒子束的偏转器和用于驱动衬底的平台机构。 偏转器沿主扫描方向扫描带电粒子束，并且载物台机构沿副扫描方向扫描基板，从而在基板上绘制图案。 带电粒子光刻设备还包括：用于控制用带电粒子束照射或不照射衬底的消隐单元; 以及控制单元，用于当在所述平台机构在副扫描方向上驱动所述基板的状态下暂停所述基板上的所述拉伸时，控制所述偏转器，以使所述带电粒子束沿副扫描方向偏转， 在从暂停到恢复的时间段期间，通过平台机构在副扫描方向上的基板的驱动量。 版权所有（C）2012，JPO＆INPIT

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