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公开(公告)号：JP2013179350A
公开(公告)日：2013-09-09
申请号：JP2013115832
申请日：2013-05-31
IPC分类号： H01L21/288 , H01L21/3205 , H01L21/768 , H01L23/522 , H05K3/34
摘要： PROBLEM TO BE SOLVED: To provide a metal filling apparatus which can make a surplus metallic layer on a treated article thin, and can fill a minute space with a molten metal without any space therebetween.SOLUTION: The metal filling apparatus comprises: a holding part H for holding an article K to be treated; a cylindrical member C provided so as to face the holding part H; pressing members P and 6 which are fitted in the cylindrical member C so as to be capable of moving back and forth; a pressing mechanism 5 for relatively moving the cylindrical member C, the holding part H and the pressing members P and 6; a moving mechanism 16 for relatively moving the holding part H and the cylindrical member C in a direction separating the holding part H from or bringing the holding part H close to the cylindrical member C; and a treatment chamber 2 in an airtight state formed by the article K to be treated or the holding part H, the cylindrical member C and the pressing members P and 6. Furthermore, the metal filling apparatus comprises: a pressure reducing mechanism 3 for reducing a pressure in the treatment chamber 2; a molten metal supply mechanism 4 for supplying a molten metal M into the treatment chamber 2; a pressurizing mechanism 7 for pressurizing the molten metal M in the treatment chamber 2; and a molten metal sealing part for confining the molten metal M supplied in the treatment chamber 2 in a space between the pressing member 6 and the surface of the article K to be treated, in the pressing members P and 6.
摘要翻译： 要解决的问题：提供一种金属填充装置，其可以使经处理制品上的多余的金属层变薄，并且可以在熔融金属之间填充微小的空间，而不会有间隙。解决方案：金属填充装置包括：保持部 持有待处理物品的H; 设置成面向保持部H的圆筒状构件C; 按压构件P和6，其装配在圆筒构件C中以能够前后移动; 用于相对移动圆柱形构件C，保持部分H和按压构件P和6的按压机构5; 移动机构16，用于使保持部H和圆筒状构件C沿着使保持部H分离或使保持部H靠近圆筒状构件C的方向相对移动; 以及由被处理物K或保持部H，筒状构件C和按压构件P，6形成的气密状态的处理室2.此外，金属填充装置包括：减压机构3， 治疗室2中的压力; 用于将熔融金属M供给到处理室2中的熔融金属供给机构4; 用于对处理室2中的熔融金属M进行加压的加压机构7; 以及熔融金属密封部件，用于将加压处理室2中供应的熔融金属M限制在按压部件6和待处理物品K的表面之间的空间中。
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公开(公告)号：JP2005039098A
公开(公告)日：2005-02-10
申请号：JP2003275598
申请日：2003-07-16
发明人： MORI TETSUYA , TAKIGAWA TOSHIKAZU
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a plasma etching apparatus capable of realizing a uniform temperature distribution in a sample even when the sample is fixed to a substrate electrode mechanically.
SOLUTION: An annular groove 16a is provided in the lower surface of a platen 6b of the substrate electrode on which the sample is placed, such that three gas holes 13 are connected, which holes penetrate the substrate electrode in communication with a He gas supply source. Further, there are provided three radial grooves 17 which take as starting ends thereof positions obtained by trisecting the annular groove 16a circumferentially. The annular grooves 16b are provided concentrically with respect to the annular groove 16a so as to connect final ends of the three radial grooves 17. A position (a starting end position of the radial groove 17) where the annular groove 16a and the radial grooves 17 communicate with each other is different from a position (an opening position of the gas hole 13) where the gas holes 13 and the annular groove 16a communicate with each other. The He gas is radiated through these gas holes 13, annular groove 16a, radial grooves 17, and annular groove 16b to cool the sample.
COPYRIGHT: (C)2005,JPO&NCIPI摘要翻译： 要解决的问题：提供即使当机械地将样品固定到基板电极时，也能够在样品中实现均匀的温度分布的等离子体蚀刻装置。 解决方案：环形槽16a设置在其上放置样品的基板电极的压板6b的下表面中，使得连接三个气孔13，这些孔穿透基板电极与He连通 供气源 此外，设置有三个径向槽17，其作为通过将环形槽16a周向地分开而获得的位置的起始端。 环形槽16b相对于环形槽16a同心地设置，以便连接三个径向槽17的最终端。环形槽16a和径向槽17的位置（径向槽17的起始端位置） 彼此连通不同于气孔13和环状槽16a相互连通的位置（气孔13的开口位置）。 He气通过这些气孔13，环形槽16a，径向槽17和环形槽16b辐射以冷却样品。 版权所有（C）2005，JPO＆NCIPI
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公开(公告)号：JP2013077806A
公开(公告)日：2013-04-25
申请号：JP2012167592
申请日：2012-07-27
IPC分类号： H01L21/288 , B22D19/00 , H01L21/3205 , H01L21/768 , H01L23/14 , H01L23/522
摘要： PROBLEM TO BE SOLVED: To accurately charge a minute space, which is formed to be opened on an object to be processed, with a molten metal without incurring a charging defect or cracking of the object to be processed.SOLUTION: A metal charging apparatus 1 comprises a holding stage H holding a semiconductor wafer K, a housing C and a piston P which is fitted into an internal space of the housing C in an air-tight state. An air-tight processing chamber 2 is formed from the semiconductor wafer K or the holding stage H, the housing C and the piston P and further, the apparatus comprises a pressure reduction mechanism 3 which reduces pressure inside of the processing chamber 2 and a molten metal supply mechanism 4 which supplies a molten metal M into the processing chamber 2. In the piston P, at least the side opposed to the semiconductor wafer K is comprised of a metal.
摘要翻译： 要解决的问题：为了在熔融金属上精确地加载形成为待加工物体的开口的微小空间，而不会引起加料物体的充电缺陷或开裂。 解决方案：金属充电装置1包括保持半导体晶片K的保持台H，壳体C和以气密状态装配到壳体C的内部空间中的活塞P. 从半导体晶片K或保持台H，壳体C和活塞P形成气密处理室2，并且该装置还包括减压机构3，其减小处理室2内部的压力和熔融的 金属供给机构4，其将熔融金属M供给到处理室2.在活塞P中，至少与半导体晶片K相对的一侧由金属构成。 版权所有（C）2013，JPO＆INPIT
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公开(公告)号：JP2013075330A
公开(公告)日：2013-04-25
申请号：JP2012167761
申请日：2012-07-27
IPC分类号： B22D19/00 , B22D23/00 , B22D27/13 , H01L21/28 , H01L21/3205 , H01L21/768 , H01L23/522
CPC分类号： B22D18/02 , B22D19/00 , B22D19/08 , B22D39/02 , C23C6/00 , H01L21/67092 , H01L21/76898
摘要： PROBLEM TO BE SOLVED: To provide a metal filling apparatus capable of minimizing the thickness of a layer consisting of excess metal formed on a processed workpiece, and filling very small space (a via hole or a through-hole) formed to be opened on the workpiece with a molten metal.SOLUTION: The metal filling apparatus 1 includes: a holding table H for holding a semiconductor wafer; a piston P which is provided oppositely to the holding table H and has a pressing unit made of a metal formed on the side opposite to the holding table H; and a pressing mechanism 5 which can press the piston P against the semiconductor wafer K held on the holding table H, etc. An airtight processing chamber 2 is formed by the semiconductor wafer K held on the holding table H, a housing C and the piston P. The metal filling apparatus further includes: a decompression mechanism 3 which discharges gas in the processing chamber 2 to decompress the inside of the processing chamber 2; a molten metal supply mechanism 4 for supplying the molten metal M in the processing chamber 2; and a pressurized gas supply mechanism 7 for supplying inert gas in the processing chamber 2, etc.
摘要翻译： 要解决的问题：提供一种金属填充装置，其能够使由形成在被加工工件上的多余金属构成的层的厚度最小化，并且填充形成为非常小的空间（通孔或通孔） 用熔融金属在工件上打开。 解决方案：金属填充装置1包括：用于保持半导体晶片的保持台H; 活塞P，其与保持台H相对地设置，并且具有由形成在与保持台H相反的一侧的金属制成的按压单元; 以及可以将活塞P压靠在保持台H上的半导体晶片K等的按压机构5.由保持在保持台H上的半导体晶片K，壳体C和活塞形成气密处理室2 金属填充装置还包括：减压机构3，其在处理室2中排出气体，以减压处理室2的内部; 用于在处理室2中供应熔融金属M的熔融金属供给机构4; 以及用于在处理室2内供给惰性气体的加压气体供给机构7等。（C）2013，JPO＆INPIT
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