-
公开(公告)号:JP5787019B2
公开(公告)日:2015-09-30
申请号:JP2014218423
申请日:2014-10-27
申请人: 日立金属株式会社
CPC分类号: H01L31/02013 , C23C2/02 , C23C2/08 , C23C26/02 , C23C28/321 , C23C28/322 , C23C28/345 , C23C6/00 , H01L31/0508 , H01L31/0512 , Y02E10/50
-
公开(公告)号:JP2013075330A
公开(公告)日:2013-04-25
申请号:JP2012167761
申请日:2012-07-27
IPC分类号: B22D19/00 , B22D23/00 , B22D27/13 , H01L21/28 , H01L21/3205 , H01L21/768 , H01L23/522
CPC分类号: B22D18/02 , B22D19/00 , B22D19/08 , B22D39/02 , C23C6/00 , H01L21/67092 , H01L21/76898
摘要: PROBLEM TO BE SOLVED: To provide a metal filling apparatus capable of minimizing the thickness of a layer consisting of excess metal formed on a processed workpiece, and filling very small space (a via hole or a through-hole) formed to be opened on the workpiece with a molten metal.SOLUTION: The metal filling apparatus 1 includes: a holding table H for holding a semiconductor wafer; a piston P which is provided oppositely to the holding table H and has a pressing unit made of a metal formed on the side opposite to the holding table H; and a pressing mechanism 5 which can press the piston P against the semiconductor wafer K held on the holding table H, etc. An airtight processing chamber 2 is formed by the semiconductor wafer K held on the holding table H, a housing C and the piston P. The metal filling apparatus further includes: a decompression mechanism 3 which discharges gas in the processing chamber 2 to decompress the inside of the processing chamber 2; a molten metal supply mechanism 4 for supplying the molten metal M in the processing chamber 2; and a pressurized gas supply mechanism 7 for supplying inert gas in the processing chamber 2, etc.
摘要翻译: 要解决的问题:提供一种金属填充装置,其能够使由形成在被加工工件上的多余金属构成的层的厚度最小化,并且填充形成为非常小的空间(通孔或通孔) 用熔融金属在工件上打开。 解决方案:金属填充装置1包括:用于保持半导体晶片的保持台H; 活塞P,其与保持台H相对地设置,并且具有由形成在与保持台H相反的一侧的金属制成的按压单元; 以及可以将活塞P压靠在保持台H上的半导体晶片K等的按压机构5.由保持在保持台H上的半导体晶片K,壳体C和活塞形成气密处理室2 金属填充装置还包括:减压机构3,其在处理室2中排出气体,以减压处理室2的内部; 用于在处理室2中供应熔融金属M的熔融金属供给机构4; 以及用于在处理室2内供给惰性气体的加压气体供给机构7等。(C)2013,JPO&INPIT
-
公开(公告)号:JPWO2011024290A1
公开(公告)日:2013-01-24
申请号:JP2011528569
申请日:2009-08-28
申请人: 大和鋼管工業株式会社
CPC分类号: C23C2/36 , B05C3/12 , B05D1/30 , B21C37/065 , B21C37/09 , B21C37/101 , B21C37/105 , B21C37/108 , B21C37/153 , B21C43/00 , C23C2/003 , C23C2/02 , C23C2/38 , C23C6/00
摘要: 【課題】連続鋼管製造ラインにおいて、浸漬時間を容易に調整可能なシステム及び製造方法の提供。【解決手段】帯鋼から連続製造ラインにて内外面又はいずれか一方の面に溶融金属めっきを施した鋼管を製造する鋼管製造システムであって、鋼管の内面に相当する側の帯鋼上側に溶融金属を注ぎかけて溶融金属めっきを施す、内面めっき実施部と、内面めっきの施された帯鋼を連続的に管状に冷間成形し、該鋼管に成形された帯鋼の長手方向端面接合部をシーム溶接して連続鋼管を得るための鋼管形成部と、前記鋼管外面を溶融金属に浸漬して溶融金属めっきを施す、外面めっき実施部と、を有する鋼管製造システムにおいて、前記内面めっき実施部及び/又は外面めっき実施部における、溶融金属浸漬長さを調整可能であることを特徴とするシステム。【選択図】図1
-
公开(公告)号:JP3801452B2
公开(公告)日:2006-07-26
申请号:JP2001053741
申请日:2001-02-28
申请人: 三菱重工業株式会社
IPC分类号: C23C26/00 , F01D5/28 , B23K1/20 , C23C6/00 , C23C10/18 , C23C24/10 , C23C26/02 , C23C28/02 , F01D5/20 , F04D29/02
CPC分类号: F01D11/12 , C23C6/00 , C23C10/18 , C23C24/10 , C23C26/02 , C23C28/022 , C23C28/023 , C23C28/027 , C23C28/40 , C23C28/44 , F05D2230/90 , F05D2300/611
-
公开(公告)号:JPS6164885A
公开(公告)日:1986-04-03
申请号:JP18542484
申请日:1984-09-06
申请人: Nippon Steel Corp
发明人: SATO SHUN , YAMADA TOSHIO , UMEZONO AKIMI
CPC分类号: C23C6/00
摘要: PURPOSE:To improve the magnetic characteristic of a thin magnetic metallic strip and to simplify process by injecting a molten metal to the surface of a moving belt for cooling to form a thin strip then coating a surface treating agent to the surface of the thin strip in succession thereto and baking said agent. CONSTITUTION:The molten metal 4 is ejected from a nozzle 5 to the surface of a rotating roll 1 to cast the thin strip 7 and thereafter the surface treating agent 9 is coated to the surface of the strip 7 by an extruder 8 for the agent 9 and is dried and baked by the heat of the strip 7 to form the film. The agent 9 is waxy or pasty and is exemplified by a mixture composed of >=1 kinds among alcohol compds. of Li, Mg, Al, Si, Ti, or Zr which are hydrolyzed and gelled. The residual tensile stress is generated in the strip 7 by the difference of coefft. of thermal expansion between the film formed by such method and the strip 7, by which the magnetic domains are finely segmented, the iron loss is decreased and the magnetic characteristics are improved.
摘要翻译: 目的:为了改善薄磁性金属带的磁特性,并通过将熔融金属注入到移动带的表面以进行冷却以形成薄带来简化工艺,然后将表面处理剂涂覆到薄带的表面 继承并烘烤所述代理。 构成:熔融金属4从喷嘴5喷射到旋转辊1的表面以铸造薄带7,然后通过用于试剂9的挤出机8将表面处理剂9涂覆到带材7的表面 并通过条带7的热量干燥并烘烤以形成膜。 试剂9是蜡状的或糊状的,并且由酒精组合物中由≥1种组成的混合物举例说明。 的水解和凝胶化的Li,Mg,Al,Si,Ti或Zr。 残余拉伸应力在带材7中由系数的差异产生。 通过这种方法形成的膜与带状物7之间的热膨胀,磁畴细分,铁损降低,磁特性提高。
-
公开(公告)号:JPS5852556B2
公开(公告)日:1983-11-24
申请号:JP6810979
申请日:1979-05-31
发明人: YAMAGISHI RYOZO , YOSHIOKA OSAMU , ONDA MAMORU , ISHIKAWA TETSUO
CPC分类号: C23C6/00
-
公开(公告)号:JP6039628B2
公开(公告)日:2016-12-07
申请号:JP2014218425
申请日:2014-10-27
申请人: 日立金属株式会社
CPC分类号: H01L31/02013 , C23C2/02 , C23C2/08 , C23C26/02 , C23C28/321 , C23C28/322 , C23C28/345 , C23C6/00 , H01L31/0508 , H01L31/0512 , Y02E10/50
-
公开(公告)号:JP5845331B2
公开(公告)日:2016-01-20
申请号:JP2014218422
申请日:2014-10-27
申请人: 日立金属株式会社
CPC分类号: H01L31/02013 , C23C2/02 , C23C2/08 , C23C26/02 , C23C28/321 , C23C28/322 , C23C28/345 , C23C6/00 , H01L31/0508 , H01L31/0512 , Y02E10/50
-
公开(公告)号:JP5248916B2
公开(公告)日:2013-07-31
申请号:JP2008135994
申请日:2008-05-23
发明人: プロコフィエフ アンドレイ , ビューラー−パッシェン ジルケ , サッシク ヘルベルト , ローマン ステファン , ポングラッツ ペーター
IPC分类号: C22C1/02 , B22F1/00 , B22F9/08 , C22C1/04 , C22C13/00 , C22C28/00 , C22F1/00 , C22F1/16 , H01L35/14 , H01L35/34
CPC分类号: H01L35/34 , B22F3/115 , B22F9/08 , B22F2001/0037 , C22C1/0491 , C23C4/08 , C23C4/123 , C23C6/00 , H01L35/22 , Y10T428/265 , Y10T428/31678
摘要: The present invention relates a method for producing clathrate compounds, comprising producing a homogeneous melt containing the desired elements in the desired ratio, and subsequently solidifying said melt to obtain the clathrate compound by quickly cooling the melt.
-
-
-
-
-
-
-
-
-