Abstract:
PROBLEM TO BE SOLVED: To provide a method for correcting an electronic proximity effect by using an off-centered scattering function.SOLUTION: The present invention discloses a method of projecting an electron beam, which is used in especially direct or indirect drawing lithography and an electron microscope examination. Especially in the case of limit dimension or resolution below 50 nm, a proximity effect caused by front and back scattering of electrons in a beam interacting a target should be corrected. For the correction, convolution integration of a point spread function with respect to a shape of the target is used conventionally. A conventional technology has the point spread function whose center is at the center of the beam, and uses a Gaussian function or exponential distribution law. In the present invention, at least one component of the point spread function has a maximum value whose position is not at the center of the beam. Preferably the maximum value is positioned at a back scattering peak. Advantageously, a gamma distribution law is used for the point spread function.
Abstract:
PROBLEM TO BE SOLVED: To provide an aberration correcting structure enabling both a long-focus aberration correcting function and a short-focus aberration correcting function. SOLUTION: By using a conventional aberration corrector structure disposing two rotation-symmetry lenses between two multi-pole lenses, this aberration corrector disposes three rotation symmetry lenses between an objective lens and the multi-pole lens instead of the conventional arrangement in which two rotationally symmetric lenses are disposed therebetween. When the focal length of the objective lens is long, a set of two of the three rotation symmetry lenses disposed between the objective lens and the multi-pole lens is used for correction of aberration. Further, when the focal length of the objective lens is short for high resolution observation, etc, another set of two of the three rotation symmetry lenses disposed between the objective lens and the multi-pole lens which is different from the set of two rotation symmetry lenses used for longer focal length is used for correction of aberration. COPYRIGHT: (C)2010,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a molding offset adjustment method and a charged particle beam drawing device that accurately grasp a phenomenon and make an adjustment with high precision without changing a way used so far largely.SOLUTION: A molding offset adjustment method includes the steps of: confirming a reference point formed by a first molding aperture overlapping with a second molding aperture, mounted on a charged particle beam drawing device; deflecting a charged particle beam and changing a position of the first molding aperture so that an overlap region of the first molding aperture and the second molding aperture forms a predetermined shot size; measuring a current value of the charged particle beam passing through the overlap region; fitting the relation between the shot size and the corresponding current value using a cubic polynomial, and calculating a coefficient of the cubic polynomial with which the relation can be fitted; and correcting a molding offset amount using the calculated coefficient of the cubic polynomial.