Superconductive single-flux quantum integrated circuit device
    4.
    发明专利
    Superconductive single-flux quantum integrated circuit device 审中-公开
    超级单通道量子集成电路器件

    公开(公告)号:JP2013058705A

    公开(公告)日:2013-03-28

    申请号:JP2011197572

    申请日:2011-09-09

    摘要: PROBLEM TO BE SOLVED: To eliminate the influence of a return current of a bias current and the bias current itself on an SFQ logic circuit in a chip, in a superconductive single-flux quantum integrated circuit device.SOLUTION: A superconductive single-flux quantum integrated circuit device includes: a main superconductive ground surface of a superconductive single-flux integrated circuit chip; a local superconductive ground surface isolated from the main superconductive ground surface; a superconductive single-flux integrated circuit formed on the local superconductive ground surface; a thin-film resistor having a total resistance of 1 μΩ to 0.1 Ω and connected between the main superconductive ground surface and the local superconductive ground surface; and a bias power-supply line supplying a DC bias to the superconductive single-flux integrated circuit.

    摘要翻译: 要解决的问题:为了消除超导单通量子集成电路器件中的偏置电流和偏置电流本身的返回电流对芯片中的SFQ逻辑电路的影响。 超导单通量子集成电路器件包括:超导单通量集成电路芯片的主超导地表面; 与主超导地表面隔离的局部超导地面; 形成在局部超导地面上的超导单磁通集成电路; 一个总电阻为1μΩ至0.1Ω并连接在主超导地表面与局部超导地表面之间的薄膜电阻器; 以及向超导单通量集成电路提供DC偏置的偏置电源线。 版权所有(C)2013,JPO&INPIT

    5.
    发明专利
    失效

    公开(公告)号:JP3123164B2

    公开(公告)日:2001-01-09

    申请号:JP33026691

    申请日:1991-12-13

    IPC分类号: H01L39/22 H01L27/18 H01L39/24

    6.
    发明专利
    失效

    公开(公告)号:JP2000514957A

    公开(公告)日:2000-11-07

    申请号:JP50656598

    申请日:1997-07-19

    IPC分类号: H01L39/22 H01L27/18 H01L39/24

    TUNNEL EFFECT SUPERCONDUCTING DETECTOR CELL

    公开(公告)号:JPH11317549A

    公开(公告)日:1999-11-16

    申请号:JP37662498

    申请日:1998-12-04

    IPC分类号: H01L39/22 H01L27/18 H01L39/10

    摘要: PROBLEM TO BE SOLVED: To provide a detector cell equipped with tunnel-effect superconducting devices, which are organized into a two-dimensional array and deposited on a common substrate and comprising each a tunnel-effect superconducting junction electrically connected to a bottom connection area and to a top connection region. SOLUTION: Superconducting devices 10 are isolated from each other by a trench region 11, which extends downward and comprises a bottom connection region 2, individual bottom connection areas 2 located between junctions 3, 4, and 5 and a substrate 1 are defined, and at least one individual bottom connection region is electrically connected to at least one bottom connection region of an adjacent superconducting device with a localized bridge region 10.

    INPUT OUTPUT INTERFACE
    10.
    发明专利

    公开(公告)号:JPH09246520A

    公开(公告)日:1997-09-19

    申请号:JP5713196

    申请日:1996-03-14

    发明人: OKAZAKI MITSUYA

    IPC分类号: H01L27/18 H01L39/22 H04B1/18

    摘要: PROBLEM TO BE SOLVED: To provide a signal transmission line which suppresses the conduction of heat penetrating through the transmission path of i/o signals from outside, and has little loss of input/output signals, in a system which requires the interruption of thermal effect with outside, that is, in a device which materializes peculiar operation only in the specified thermal atmosphere such as ultralow temperature, etc. SOLUTION: As the constitution of the input/output signal transmission line 4 of a superconductive device 3 which generates superconductive property, being kept in specified ultralow temperature condition by the cooling head 2 within the ultralow temperature preserver 1 constituted of a heat insulating material or the like which interrupts outside thermal atmosphere, a coupling capacitor 5a and an inductor 5b are connected in series between the input/output ports 3a and 3b of the superconductive device 3 and the input/output terminals 4a and 4b outside the ultralow temperature preserver 1.